Scribd Logo
Upload

Welcome to Scribd!

  • 14 views

    PIN Sili Con Pho To Di Ode: Type OP999

    Uploaded by

    Yanina Anaya Doria
    The document is a product bulletin that describes an OP999 pin silicon photodiode. It provides specifications for the photodiode such as its maximum ratings, features, packaging, and electrical and optical performance characteristics. The photodiode has a narrow receiving angle, linear response, fast switching time, and T-1 3/4 package style. It is tested to closely correlate with GaAlAs emitters. Performance graphs show characteristics such as relative response versus wavelength, coupling with an emitter, and light and dark current versus temperature and voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    PIN Sili Con Pho To Di Ode: Type OP999

    Uploaded by

    Yanina Anaya Doria
    14 views2 pages
    The document is a product bulletin that describes an OP999 pin silicon photodiode. It provides specifications for the photodiode such as its maximum ratings, features, packaging, and electrical and optical performance characteristics. The photodiode has a narrow receiving angle, linear response, fast switching time, and T-1 3/4 package style. It is tested to closely correlate with GaAlAs emitters. Performance graphs show characteristics such as relative response versus wavelength, coupling with an emitter, and light and dark current versus temperature and voltage.

    Original Title

    Datasheet.hk_op999_350619

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The document is a product bulletin that describes an OP999 pin silicon photodiode. It provides specifications for the photodiode such as its maximum ratings, features, packaging, and electrical and optical performance characteristics. The photodiode has a narrow receiving angle, linear response, fast switching time, and T-1 3/4 package style. It is tested to closely correlate with GaAlAs emitters. Performance graphs show characteristics such as relative response versus wavelength, coupling with an emitter, and light and dark current versus temperature and voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    14 views2 pages

    PIN Sili Con Pho To Di Ode: Type OP999

    Uploaded by

    Yanina Anaya Doria
    The document is a product bulletin that describes an OP999 pin silicon photodiode. It provides specifications for the photodiode such as its maximum ratings, features, packaging, and electrical and optical performance characteristics. The photodiode has a narrow receiving angle, linear response, fast switching time, and T-1 3/4 package style. It is tested to closely correlate with GaAlAs emitters. Performance graphs show characteristics such as relative response versus wavelength, coupling with an emitter, and light and dark current versus temperature and voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    Product Bulletin OP999

    June 1996

    PIN Silicon Photodiode


    Type OP999

    Features Absolute Maximum Ratings (TA = 25o C unless otherwise noted)


    • Narrow receiving angle Reverse Breakdown Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V
    Storage and Operating Temperature Range . . . . . . . . . . . . . . . . . . -40o C to +100o C
    • Linear response vs. irradiance
    Lead Soldering Temperature (1/16 inch [1.6 mm] from case for 5 sec. with
    • Fast switching time soldering iron). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260o C(1)
    • T-1 3/4 package style Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2)
    Notes:
    Description (1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
    Max. 20 grams force may be applied to leads when soldering.
    The OP999 photodiode consists of a PIN (2) Derate linearly 1.67 mW/o C above 25o C.
    silicon photodiode mounted in a dark (3) Light source is an unfiltered GaAlAs emitting diode operating at peak emission wavelength of
    890 nm and Ee(APT) of 0.25 mW/cm2.
    blue plastic injection molded shell (4) This dimension is held to within ± 0.005" on the flange edge and may vary up to ± 0.020" in
    package. The narrow receiving angle the area of the leads.
    provides excellent on-axis coupling. The
    sensors are 100% production tested for Typical Performance Curves
    close correlation with Optek GaAlAs
    emitters.

    Optek’s packaging process provides Coupling Characteristics


    Relative Response vs.
    excellent optical and mechanical axis Wavelength OP999 and OP299
    alignment. The shell also provides
    excellent optical lens surface, control of
    chip placement, and consistency of the VR = 5 V
    outside package dimensions. IF = 20 mA

    λ- Wavelength - nm Distance Between Lens Tips - inches

    Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972) 323-2200 Fax (972) 323-2396
    3-66
    Type OP999
    Electrical Characteristics (TA = 25o C unless otherwise noted)

    SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS


    IL Reverse Light Current 6.5 15 µA VR = 5 V, Ee = 0.25 mW/cm2(3)
    ID Reverse Dark Current 1 60 nA VR = 30 V, Ee = 0
    V(BR) Reverse Breakdown Voltage 60 V IR = 100 µA
    VF Forward Voltage 1.2 V IF = 1 mA
    CT Total Capacitance 4 pF VR = 20 V, Ee = 0, f = 1.0 MHz
    tr, tf Rise Time, Fall Time 5 ns VR = 20 V, λ = 850 nm, RL = 50 Ω

    Typical Performance Curves

    Normalized Light Current vs Total Capacitance vs Normalized Light and Dark


    Reverse Voltage Reverse Voltage Current vs Ambient Temperature

    VR = 5 V
    λ= 890 nm
    Normalized to
    TA = 25o C TA = 25o C
    Ee = 0 mW/cm2
    f = 1 MHz
    Light Current
    TA = 25o C
    λ= 935 nm
    Normalized to VR = 5 V

    Dark Current

    TA - Ambient Temperature - oC
    VR - Reverse Voltage - V VR - Reverse Voltage - V

    Light Current vs. Irradiance Switching Time Test Circuit Light Current vs. Angular
    Displacement

    Test
    Conditions:
    VR = 5 V λ = 935 nm
    TA = 25o C VR = 5 V
    λ= 890 nm

    Ee - Irradiance - mW/cm2 θ - Angular Displacement - Deg.

    Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
    Optek Technology, Inc. 1215 W. Crosby Road Carrollton, Texas 75006 (972)323-2200 Fax (972)323-2396
    3-67

    You might also like