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    This document contains questions about semiconductor devices and properties: 1. Metals, semiconductors and insulators are distinguished primarily by their bandgap energy and carrier mobility. 2. It asks the reader to calculate the equilibrium hole concentration for silicon doped with 1017 Arsenic atoms/cm3 at 300K. 3. It defines an electron-volt as a unit of energy commonly used when discussing semiconductor properties like bandgap. The document continues with additional questions about intrinsic carrier concentration, drift velocity, resistivity, conductivity type and other semiconductor characteristics.

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    This document contains questions about semiconductor devices and properties: 1. Metals, semiconductors and insulators are distinguished primarily by their bandgap energy and carrier mobility. 2. It asks the reader to calculate the equilibrium hole concentration for silicon doped with 1017 Arsenic atoms/cm3 at 300K. 3. It defines an electron-volt as a unit of energy commonly used when discussing semiconductor properties like bandgap. The document continues with additional questions about intrinsic carrier concentration, drift velocity, resistivity, conductivity type and other semiconductor characteristics.

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    This document contains questions about semiconductor devices and properties: 1. Metals, semiconductors and insulators are distinguished primarily by their bandgap energy and carrier mobility. 2. It asks the reader to calculate the equilibrium hole concentration for silicon doped with 1017 Arsenic atoms/cm3 at 300K. 3. It defines an electron-volt as a unit of energy commonly used when discussing semiconductor properties like bandgap. The document continues with additional questions about intrinsic carrier concentration, drift velocity, resistivity, conductivity type and other semiconductor characteristics.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    26 views2 pages

    Assign 1

    Uploaded by

    Hickman Mohammed
    This document contains questions about semiconductor devices and properties: 1. Metals, semiconductors and insulators are distinguished primarily by their bandgap energy and carrier mobility. 2. It asks the reader to calculate the equilibrium hole concentration for silicon doped with 1017 Arsenic atoms/cm3 at 300K. 3. It defines an electron-volt as a unit of energy commonly used when discussing semiconductor properties like bandgap. The document continues with additional questions about intrinsic carrier concentration, drift velocity, resistivity, conductivity type and other semiconductor characteristics.

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    COE/EE 271 SEMICONDUCTOR DEVICES

    1. Metals, semiconductors and insulators are principally distinguished by


    a) the carrier mobility
    b) the magnitude of the bandgap
    c) the impurity concentration

    2. A silicon sample is doped to 1017 Arsenic atoms/cm3. Calculate the equilibrium hole concentration at
    300k.

    3. Define an electron-volt (eV)

    4. A semiconductor has a band gap energy of 0.2eV; give one possible application of this
    semiconductor.

    5. Give three examples each of elemental and compound semiconductors.

    6. Should we expect the intrinsic carrier concentration of a semiconductor material with a very large
    band gap energy to be large? Explain.

    7. There are 1000 thermally generated electrons (and for that matter 1000 holes as well) in intrinsic
    semiconductor. What is the intrinsic carrier concentration?

    8. Determine the density of electrons in an intrinsic silicon at 300K and 600K.

    9. For a germanium sample at room temperature, it is known that ni = 1013 cm-3, n = 2p. Determine n
    and p. Is the sample a p or n type?

    10. What is drift?

    11. Consider an N-type material at T = 300K doped to a concentration of Nd = 2x1016 cm-3. Assume
    mobility values of µn = 6800 cm2/Vs and µp = 300 cm2/Vs.
    a) Determine the resistivity of the material
    b) Determine the applied electric field that will induce a drift current of 175 A/cm2.

    12. a) A material is doped with 1017 cm-3 of Arsenic. What is the conductivity type of the material, and
    what is the resistivity of the material?

    b) What is the resistance of the a piece of this silicon material 1µm long and 0.1 µm2 in cross sectional
    area?

    13. A potential of 5v is applied across a 1 µm piece of n-type silicon device. The doping concentration
    varies as
    n(x) = 1016exp(-x/L) cm-3

    where L is the length of the device.


    a) If the average velocity is 20x106 cm/s, what is the electron mobility?
    b) Calculate the electron diffusion constant
    c) Determine the diffusion current
    B = 5.2x1015
    Eg = 1.1eV
    k = 86.2x10-6 eV/K

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