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    LAB Report

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    ahmad
    This document describes a lab experiment on transistor biasing. The goal is to establish a known operating point (Q-point) for a transistor by analyzing a circuit both through simulation and building it on a breadboard. Key voltages, currents, and the Q-point are calculated for the initial circuit and when a resistor is shortened. The measured values are found to closely match but differ slightly from the calculated values due to leakage currents. Biasing the transistor establishes an accurate operating point, important for applications like amplifiers.

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    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd

    LAB Report

    Uploaded by

    ahmad
    69 views12 pages
    This document describes a lab experiment on transistor biasing. The goal is to establish a known operating point (Q-point) for a transistor by analyzing a circuit both through simulation and building it on a breadboard. Key voltages, currents, and the Q-point are calculated for the initial circuit and when a resistor is shortened. The measured values are found to closely match but differ slightly from the calculated values due to leakage currents. Biasing the transistor establishes an accurate operating point, important for applications like amplifiers.

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    LAB report

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    This document describes a lab experiment on transistor biasing. The goal is to establish a known operating point (Q-point) for a transistor by analyzing a circuit both through simulation and building it on a breadboard. Key voltages, currents, and the Q-point are calculated for the initial circuit and when a resistor is shortened. The measured values are found to closely match but differ slightly from the calculated values due to leakage currents. Biasing the transistor establishes an accurate operating point, important for applications like amplifiers.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    69 views12 pages

    LAB Report

    Uploaded by

    ahmad
    This document describes a lab experiment on transistor biasing. The goal is to establish a known operating point (Q-point) for a transistor by analyzing a circuit both through simulation and building it on a breadboard. Key voltages, currents, and the Q-point are calculated for the initial circuit and when a resistor is shortened. The measured values are found to closely match but differ slightly from the calculated values due to leakage currents. Biasing the transistor establishes an accurate operating point, important for applications like amplifiers.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 12

    Lab 5: Transistor Biasing

    Grantham University

    November 19, 2019


    Introduction:

    This lab is based on the fundamentals of a transistor biasing and the analysis of the circuit. The

    goal of Transistor Biasing is to establish a known Q-point in order for the transistor to work

    efficiently and produce an undistorted output signal. In bipolar transistor circuits, the Q-point is

    represented by ( VCE, IC ) for the NPN transistors or ( VEC, IC ) for PNP transistors. The

    expectations of the lab are to learn the working of Transistor and its Q point and compare the

    calculated and measured values. Furthermore, we are implementing this lab on software and

    hardware both to understand it more deeply. We made circuit on Multisim Software and take the

    output values from their and also patch the circuit on breadboard to measure the parameters

    practically. I measured the voltages and currents across all the nodes of the circuit.

    Equipment:

    The type of equipment I used are as follows :

    o Breadboard

    o NI myDAQ Instrument device

    o Screw Driver

    o Screw Terminal connector

    o USB Cable

    o Multimeter with probes

    o Multimeter from NI ELVISmx Instrument Launcher

    I found these components in the library of Multisim by searching them by names. Then I placed

    the components in the project I created by the help of provided circuit diagram. I set the

    tolerance of resistor up to 20%.


    Procedure:

    1. Firstly we Analyzed the circuit in the Figure 1 below to calculate the following values: VBB,

    VE, IE, VC and VCE. Make sure to include 20% tolerance for each resistor in the calculations.

    Figure 1

    2. We then patch the circuit on breadboard and then did calculations of the above circuit.

    Calculations:

    VBB = {R2/(R1 + R2)}*VCC

    = 3/9 * 15 V = 5 V

    VE = VB – 0.7 V Where 0.7 V is the forward bias voltage for the Base/Emitter junction

    VE = 5 – 0.7 V = 4.3 V

    IE = VE/RE

    IE = 4.3v/1k𝝮 = 4.3 mA

    IC = IE – IB but IB is negligible
    IC = IE = 4.3 mA

    VC = VCC - ICRC

    VC = 15 – 4.3mA*470𝝮 = 12.98 V

    6. Then, we Short the resistor R2 and calculate the values.

    Calculations (When R2 is shorted):

    VBB = {R2/(R1 + R2)}*VCC but R2=0

    = 0 * 15 V = 0 V

    VE = VB – 0.7 V Where VB is not adequate to forward bias voltage for the Base/Emitter

    junction, therefore

    VE = 0 V

    IE = VE/RE

    IE = 0/1k𝝮 = 0 A

    IC = IE – IB but IB is negligible

    IC = IE = 0 A

    VC = VCC - ICRC

    VC = 15 – 0*470𝝮 = 15 V
    Circuit Design

    Results:

    Here in the figure below we measured VBB = 4.95.


    Here in the figure below we measured VE = 4.25

    Here in the figure below we measured VC = 13.0 V


    Here in the figure below we measured IE = 4.25 mA

    Here in the figure below we measured IC = 4.22 mA


    Here in the figure below we measured Results with R2 shorted when VBB = 0 V

    Here in the figure below we measured VE = 18 nV


    Here in the figure below we measured VC = 15 V

    Here in the figure below we measured IE= 18.0 pA


    Here in the figure below we measured IC = 68.4 pA

    Analysis

    Results table 1

    Calculated Measured

    VBB 5V 4.95 V

    VE 4.3 V 4.25 V

    VC 12.98 V 13.0 V

    IE 4.3 mA 4.25 mA

    IC 4.3 mA 4.22 mA
    Results table 2

    Calculated
    Measured
    Values
    values with
    with R2
    R2 shorted
    shorted

    VBB 0V 0V

    VE 0V 18 nV

    VC 15 V 15 V

    IE 0 18.0 pA

    IC 0 68.2 pA

    Questions:

    I confirmed that, the measured values closely match the calculated values. The slight difference

    is due to leakage currents across the base emitter junction. The calculated values assume zero

    base currents. The difference can be reduced by picking transistors with higher efficiencies

    usually provided by the manufacturer.

    Furthermore, when we short the resistor R2 the transistor goes in to cut-off mode and acts as an

    open switch. The base voltage is pulled to zero making the collector emitter voltage, VCE = VCC

    and collector current IC = 0 hence the measured values change.

    Moreover, My simulation is correct and all the results were matched approximately.
    Conclusion

    The measured values were found to closely match the calculated values. The slight difference is

    due to leakage currents across the base emitter junction. The biasing enables us to find the

    accurate transistor Q-point. This makes it useful for switching operations and for design of audio

    and power amplifiers with high efficiencies and minimal distortion. The objectives of the lab

    were met.

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