Objectives:: Figure: Class B Push Pull Amplifier
Objectives:: Figure: Class B Push Pull Amplifier
Objectives:: Figure: Class B Push Pull Amplifier
PROCEDURES:
Part A: Class B push pull stage:
+Vcc
Rb1
Q1 NPN
Vin Vout
Ri Cin
Rload
Rgen 56Ω
Rin Rout
Rb2
-Vcc
Figure: Class B push pull amplifier
1. The prelab had been completed before the experiment of class B and class AB push
pull stage had been conducted. In this experiment, the power amplifier for both class
had been design to fulfil the specification given.
2. Only half of the push pull stage had been design to find the peak voltage, Vb and peak
base current, Ib and the same value had been use for the other half too. The push pull
stage had been design is to find the value of Rb1 and Rb2.
3. 50mW had to supply into the load resistor, Rload when designing the class B push pull
stage.
4. The Rb1 and Rb2 value should be smaller than Rin >4kΩ and Cin =1uF is the
specification needed to find the value of Rb1 and Rb2.
Part B: Class AB push pull stage:
Rload
1. Only half of the push pull stage had been design and the same value had been use for
the other half too. The push pull stage had been design is to find the value of Rb1 and
Rb2.
2. The 4mA is the approximate value to design the quiescent current of the transistor.
3. To find the value of Rb1 and Rb2, the peak voltage, Vb and peak base current, Ib should
be calculated such that Vout =0 Vdc.
a. The voltage across each of emitter resistor has been set to 0.9vdc and the Ie has
been calculated with the real components selected to set the quiescent current
with selection of emitter resistors, Re1 and Re2.
b. 50mW has been supply to the load resistor to design the class AB push pull
stage.
4. The value of Rin> 4kΩ, the low frequency cutoff is 100Hz to 200Hz and the high
frequency cutoff is 50kHz and 150kHz in order to find the value of Rb1 and Rb2.
5. The Vin, Vout, Rin, Rout, Av, Ai and the quiescent current were calculated at 50mW
rated output.
6. The components that were design has assembled on the Veroboard.
7. The Q- point of the transistor has been measured without R load.
8. The efficiency of power amplifier was determined.