Mos Fet Array Sta508A: Electrical Characteristics Absolute Maximum Ratings External Dimensions
Mos Fet Array Sta508A: Electrical Characteristics Absolute Maximum Ratings External Dimensions
Mos Fet Array Sta508A: Electrical Characteristics Absolute Maximum Ratings External Dimensions
Absolute Maximum Ratings (Ta=25ºC) Electrical Characteristics (Ta=25ºC) External Dimensions STA4 (LF412)
Symbol Ratings Unit Ratings
Symbol Test Conditions Unit
VDSS 120 V min typ max 25.25
±0.2
±0.2
±0.2
±0.2
9.0
±10 µA a
11.3
ID (pulse)*1 VDS = 120V, VGS = 0V 100
2.3
A IDSS
4 (Ta = 25ºC) W VTH VDS = 10V, ID = 250µA 1.0 2.0 V
±0.5
PT
3.5
20 (Tc = 25ºC) W Re (yfs) VDS = 10V, ID = 4.0A 5.0 S
(2.54)
Ω
±0.25 ±0.15
EAS *2 80 mJ VGS = 10V, ID = 4.0A 0.15 0.2 1.0 0.5
±0.3 ±0.3
RDS (ON) 0 0
Tch 150 ºC VGS = 4V, ID = 4.0A 0.2 0.25 Ω 9 •2.54=22.86
±0.05
±0.15
±0.2
±0.2
*1 PW 100µs, duty 1% Coss f = 1.0MHz 130 pF C1.5
±0.5
4.0
1.2
0.5
*2 VDD = 12V, L = 10mH, unclamped, RG = 50Ω Crss VGS = 0V 30 pF
t d (on) ID = 4A 100 ns 1 2 3 4 5 6 7 8 9 10
RL = 3Ω
t d (off) VGS = 5V 250 ns a) Type No.
tf RG = 50Ω 200 ns b) Lot No.
ID (A)
8 0.15
Ta = –55ºC VGS = 10V
4 25ºC
75ºC 0.10
4 150ºC
2
0.05
0 0 0
0 1 2 3 4 5 6 0 1.0 2.0 3.0 4.0 0 2 4 6 8 10
VDS (V) VGS (V) ID (A)
5 75ºC
IDR (A)
25ºC
3 –55ºC
0.20 VGS = 10V
Ta = –55ºC
1
25ºC 2
0.5 75ºC
0.10
150ºC 1
0 0.1 0
–50 0 50 100 150 0.05 0.1 0.5 1 5 10 0 0.2 0.4 0.6 0.8 1.0 1.2
Tc (ºC) ID (A) VSD (V)
■ Capacitance — VDS Characteristics ■ Safe Operating Area (single pulse) Equivalent Circuit Diagram
(Ta = 25ºC)
1000 20
ID (pulse) max
500 10 10
Ciss 0µ
ID (DC) max s
Capacitance (pF)
5 1m
10 s
VGS = 0V RDS (on) LIMITED m
s 3 5 7 9
f = 1MHz 10
ID (A)
0m
100 s
Coss 1 2 4 6 8
50
0.5 1 10
Crss
10 0.1
0 10 20 30 40 50 1 5 10 50 100 200
79