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    Tic 216 Datasheet

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    Breno Magalhães
    The TIC216 series includes silicon triacs rated for 6 A RMS and voltages from 400V to 800V. They have a maximum gate trigger current of 5 mA and maximum peak gate power dissipation of 2.2 W. Key electrical characteristics include repetitive peak off-state current, gate trigger current and voltage, on-state voltage, holding and latching currents, and critical rates of rise for off-state voltage and commutation voltage. Thermal characteristics include junction to case and free air thermal resistances. The triacs are packaged in a standard TO-220 package and are rated for operating temperatures

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    Tic 216 Datasheet

    Uploaded by

    Breno Magalhães
    261 views3 pages
    The TIC216 series includes silicon triacs rated for 6 A RMS and voltages from 400V to 800V. They have a maximum gate trigger current of 5 mA and maximum peak gate power dissipation of 2.2 W. Key electrical characteristics include repetitive peak off-state current, gate trigger current and voltage, on-state voltage, holding and latching currents, and critical rates of rise for off-state voltage and commutation voltage. Thermal characteristics include junction to case and free air thermal resistances. The triacs are packaged in a standard TO-220 package and are rated for operating temperatures

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    Tic 216 Datasheet

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    The TIC216 series includes silicon triacs rated for 6 A RMS and voltages from 400V to 800V. They have a maximum gate trigger current of 5 mA and maximum peak gate power dissipation of 2.2 W. Key electrical characteristics include repetitive peak off-state current, gate trigger current and voltage, on-state voltage, holding and latching currents, and critical rates of rise for off-state voltage and commutation voltage. Thermal characteristics include junction to case and free air thermal resistances. The triacs are packaged in a standard TO-220 package and are rated for operating temperatures

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    261 views3 pages

    Tic 216 Datasheet

    Uploaded by

    Breno Magalhães
    The TIC216 series includes silicon triacs rated for 6 A RMS and voltages from 400V to 800V. They have a maximum gate trigger current of 5 mA and maximum peak gate power dissipation of 2.2 W. Key electrical characteristics include repetitive peak off-state current, gate trigger current and voltage, on-state voltage, holding and latching currents, and critical rates of rise for off-state voltage and commutation voltage. Thermal characteristics include junction to case and free air thermal resistances. The triacs are packaged in a standard TO-220 package and are rated for operating temperatures

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    TIC216 SERIES

    SILICON TRIACS

    ● Sensitive Gate Triacs TO-220 PACKAGE


    (TOP VIEW)
    ● 6 A RMS

    ● Glass Passivated Wafer MT1 1

    MT2 2
    ● 400 V to 800 V Off-State Voltage
    G 3
    ● Max IGT of 5 mA (Quadrants 1 - 3)

    Pin 2 is in electrical contact with the mounting base.


    MDC2ACA

    absolute maximum ratings over operating case temperature (unless otherwise noted)
    RATING SYMBOL VALUE UNIT
    TIC216D 400
    TIC216M 600
    Repetitive peak off-state voltage (see Note 1) VDRM V
    TIC216S 700
    TIC216N 800
    Full-cycle RMS on-state current at (or below) 70°C case temperature (see Note 2) IT(RMS) 6 A
    Peak on-state surge current full-sine-waveat (or below) 25°C case temperature (see Note 3) ITSM 60 A
    Peak gate current IGM ±1 A
    Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs) PGM 2.2 W
    Average gate power dissipation at (or below) 85°C case temperature (see Note 4) PG(AV) 0.9 W
    Operating case temperature range TC -40 to +110 °C
    Storage temperature range Tstg -40 to +125 °C
    Lead temperature 1.6 mm from case for 10 seconds TL 230 °C

    NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
    2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to 110°C case temperature at
    the rate of 150 mA/°C.
    3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current. Surge
    may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
    4. This value applies for a maximum averaging time of 20 ms.

    electrical characteristics at 25°C case temperature (unless otherwise noted )


    PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
    Repetitive peak
    IDRM VD = rated VDRM IG = 0 TC = 110°C ±2 mA
    off-state current
    Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs 5
    Gate trigger Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs -5
    IGT mA
    current Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs -5
    Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs 10

    † All voltages are with respect to Main Terminal 1.

     
     
    DECEMBER 1971 - REVISED SEPTEMBER 2002
    Specifications are subject to change without notice.
    1
    TIC216 SERIES
    SILICON TRIACS

    electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)


    PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
    Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs 2.2
    Gate trigger Vsupply = +12 V† RL = 10 Ω tp(g) > 20 µs -2.2
    VGT V
    voltage Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs -2.2
    Vsupply = -12 V† RL = 10 Ω tp(g) > 20 µs 3
    VT On-state voltage IT = ±8.4 A IG = 50 mA (see Note 5) ±1.7 V
    Vsupply = +12 V† IG = 0 Init’ ITM = 100 mA 30
    IH Holding current mA
    Vsupply = -12 V† IG = 0 Init’ ITM = -100 mA -30
    Vsupply = +12 V† 4
    IL Latching current (see Note 6) mA
    Vsupply = -12 V† -2
    Critical rate of rise of
    dv/dt VDRM = Rated VDRM IG = 0 TC = 110°C ±20 V/µs
    off-state voltage
    Critical rise of
    dv/dt(c) VDRM = Rated VDRM ITRM = ±8.4 A TC = 70°C ±2 ±5 V/µs
    commutation voltage
    † All voltages are with respect to Main Terminal 1.
    NOTES: 5. This parameter must be measured using pulse techniques, t p = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
    the current carrying contacts are located within 3.2 mm from the device body.
    6. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
    R G = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.

    thermal characteristics
    PARAMETER MIN TYP MAX UNIT
    RθJC Junction to case thermal resistance 2.5 °C/W
    RθJA Junction to free air thermal resistance 62.5 °C/W

     
     
    DECEMBER 1971 - REVISED SEPTEMBER 2002
    2 Specifications are subject to change without notice.
    Mouser Electronics

    Authorized Distributor

    Click to View Pricing, Inventory, Delivery & Lifecycle Information:

    Bourns:
    TIC216D-S TIC216M-S

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