Influence of Electrochemical Deflashing On Integrated Circuit Package Delamination in Plating Process
Influence of Electrochemical Deflashing On Integrated Circuit Package Delamination in Plating Process
Influence of Electrochemical Deflashing On Integrated Circuit Package Delamination in Plating Process
X. INTRODUCTION
The population increased rapidly, including the invention
and development of industry and technology to facilitate
human. Led to the demand in the use of electronic devices is
increasing such as electric appliances, automotive and
communications equipment. This requires an Integrated
Circuit (IC) assembly inside. IC workpiece must withstand a
variety of conditions. So that makes the device work
efficiently. Therefore, the workpiece should not have a gap
occurs within a piece (Delamination). Because when use the
device, will heat up. Make the gap expansion. In the final Fig. 2: Mechanism of ED
stage, a workpiece crack forms and propagates laterally
outwards as shown in Fig. 1. Which will affect to electronic XI. EXPERIMENTAL
devices get damaged and may be dangerous to user. Each
The goal of this paper is to understand the factors that
process there will be some process that made delamination
affect on delamination. An experiment was conducted the
like Trim and Form, Molding compounds and Deflashing.
effects of concentration and electric current on 7L PDIP and
8L MSOP package in plating process. The assembly
materials of 7L PDIP and 8L MSOP package are
summarized in table 1. Scanning acoustic microscope (C-
SAM) is used to assess the interfacial delamination check
1 3 between mold compound to die, dap and leads before and
after deflashing. And then, use microscope check cleanliness
of flash between molding compound and leads.
Assembly Package
material 7L PDIP 8L MSOP
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ISSN 2348-5426 International Journal of Advances in Science and Technology (IJAST)
Pad size 150 x 200 mils 68 x 94 mils In table 4 is shown the results of 7L PDIP and 8L MSOP
Table 1 Assembly material of 7L PDIP and 8L MSOP
package from ED in plating process that varied
concentration at 625-725, 425-625, 225-425 and 0-225 g/L,
fixed electric current at 100%. Before ED of 7L PDIP and
8L MSOP package no delamination. After ED, is observed
delamination in all concentration but it is insignificant. So
8L MSOP package have problem more than 7L PDID
package because of the smaller size.
(a) (b) Table 5 is shown the results of 7L PDIP and 8L MSOP
package from ED in plating process that varied electric
Fig 3: (a) 7L PDIP and (b) 8L MSOP package layout current at 100, 60, 45, 30, 15 and 0 percent, fixed
concentration at 625-725 g/L. The delamination area is
At first step, was conducted the effect of concentration by decreased when electric current is decreased due to more
fixed electric current and varied concentration. electric current, the exchanged electrons is increased.
No. Concentration (g/L) Electric Current (%)
Electric current reduces hydrogen ion to hydrogen gas.
1 625-725
Delamination
2 425-625
100 No. 7L PDIP 8L MSOP
3 225-425 Before (%) After (%) Before (%) After (%)
4 0-225 1 0 0 0 96.87
Table 3 Design of experiment to understand the effect of electric current to (a) (b)
delamination
Fig. 4 Images from C-SAM test of (a) 7L PDIP and (b) 8L MSOP package
III. RESULTS AND DISCUSIONS
Delamination
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ISSN 2348-5426 International Journal of Advances in Science and Technology (IJAST)
IV. CONCLUSIONS
Chemical Deflashing and ED can be cleaned of flash
between molding compound and leads. ED generate
delamination package more than Chemical Deflashing,
however Chemical Deflashing without electric current is not
recommended because that is eliminate the mold flash
slowly.
ACKNOWLEDGEMENTS
The author would like to thank UTAC Thai limited
company for their excellent support and help during the
experimental phase.
V. REFERENCES
Picardal, M. and Coronel, G., Characterization of Electro-
Chemical Deflash and High Pressure Water jet through
MPCpS. 33rd International Electronics Manufacturing
Teclmology Conference 2008
Teng, W. H. and Wei , H. C., An Analysis on Oxidation,
Contamination, Adhesion, Mechanical Stress and Electro-
Etching Effect toward DIP Package Delamination. 34th
International Electronic Manufacturing Technology
Conference 2010
A.C. Tan. Tin and Solder Plating in the Semiconductor
Industry, 1992
Xuejun Fan, G.Q. Bang, W. van Drie and L. J. Emst.,
Analytical Solution for Moisture-Induced Interface
Delamination in Electronic Packaging. Electronic
Components and Technology Conference 2003
Lowenheim, F.A. (1978), Electroplating, McGraw-Hill,
New York, p. 212.
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