Pages 1 to 15

TRANSISTORS, LOW POWER, RF, NPN

BASED ON TYPE 2N3019

ESCC Detail Specification No. 5201/011

Issue 2 - Draft A July 2006

Document Custodian: European Space Agency - see https://escies.org

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ESCC Detail Specification No. 5201/011
ISSUE 2 - Draft A

LEGAL DISCLAIMER AND COPYRIGHT

European Space Agency, Copyright © 2006. All rights reserved.

The European Space Agency disclaims any liability or responsibility, to any person or entity, with respect
to any loss or damage caused, or alleged to be caused, directly or indirectly by the use and application
of this ESCC publication.

This publication, without the prior permission of the European Space Agency and provided that it is not
used for a commercial purpose, may be:

– copied in whole, in any medium, without alteration or modification.

– copied in part, in any medium, provided that the ESCC document identification, comprising the
ESCC symbol, document number and document issue, is removed.
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ESCC Detail Specification No. 5201/011
ISSUE 2 - Draft A

DOCUMENTATION CHANGE NOTICE

(Refer to https://escies.org for ESCC DCR content)

DCR No. CHANGE DESCRIPTION

187, Specification up issued to incorporate editorial and technical changes per DCRs.
TBD
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ESCC Detail Specification No. 5201/011
ISSUE 2 - Draft A

TABLE OF CONTENTS
1. GENERAL 5
1.1 Scope 5
1.2 Applicable Documents 5
1.3 Terms, Definitions, Abbreviations, Symbols and Units 5
1.4 The ESCC Component Number and Component Type Variants 5
1.4.1 The ESCC Component Number 5
1.4.2 Component Type Variants 5
1.5 Maximum Ratings 5
1.6 Physical Dimensions and Terminal Identification 6
1.7 Functional Diagram 8
1.8 Materials and Finishes 8
2. REQUIREMENTS 8
2.1 General 8
2.1.1 Deviations from the Generic Specification 8
2.1.1.1 Deviation from Screening Tests - Chart F3 8
2.2 Marking 8
2.3 Terminal Strength 9
2.4 Electrical Measurements at Room, High and Low Temperatures 9
2.4.1 Room Temperature Electrical Measurements 9
2.4.2 High and Low Temperatures Electrical Measurements 13
2.5 Parameter Drift Values 13
2.6 Intermediate and End-Point Electrical Measurements 13
2.7 Power Burn-in Conditions 14
2.8 Operating Life Conditions 14

APPENDIX ‘A’ 15
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ESCC Detail Specification No. 5201/011
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1. GENERAL

1.1 SCOPE
This specification details the ratings, physical and electrical characteristics and test and inspection data
for the component type variants and/or the range of components specified below. It supplements the
requirements of, and shall be read in conjunction with, the ESCC Generic Specification listed under
Applicable Documents.

1.2 APPLICABLE DOCUMENTS

The following documents form part of this specification and shall be read in conjunction with it:

(a) ESCC Generic Specification No. 5000

(b) MIL-STD-750, Test Methods and Procedures for Semiconductor Devices

1.3 TERMS, DEFINITIONS, ABBREVIATIONS, SYMBOLS AND UNITS

For the purpose of this specification, the terms, definitions, abbreviations, symbols and units specified in
ESCC Basic Specification No. 21300 shall apply.

1.4 THE ESCC COMPONENT NUMBER AND COMPONENT TYPE VARIANTS

1.4.1 The ESCC Component Number

The ESCC Component Number shall be constituted as follows:

Example: 520101103

• Detail Specification Reference: 5201011

• Component Type Variant Number: 03 (as required)

1.4.2 Component Type Variants

The component type variants applicable to this specification are as follows:

Variant Based on Type Case Lead Material and Finish Weight

Number max g
03 2N3019 TO-39 D2 2
04 2N3019 TO-39 D3 or D4 2

The lead material and finish shall be in accordance with the requirements of ESCC Basic Specification
No. 23500.

1.5 MAXIMUM RATINGS

The maximum ratings shall not be exceeded at any time during use or storage.

Maximum ratings shall only be exceeded during testing to the extent specified in this specification and
when stipulated in Test Methods and Procedures of the ESCC Generic Specification.
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ESCC Detail Specification No. 5201/011
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Characteristics Symbols Maximum Ratings Unit Remarks

Collector-Base Voltage VCBO 140 V Over entire
operating
Collector-Emitter Voltage VCEO 80 V
temperature
Emitter-Base Voltage VEBO 7 V range

Collector Current IC 1 A Continuous

Power Dissipation Ptot1 0.8 W At Tamb ≤ +25°C
Note 1
Ptot2 5 W At Tcase ≤ +25°C
Note 1
oC
Operating Temperature Range Top -65 to +200 Note 2
oC
Storage Temperature Range Tstg -65 to + 200 Note 2
Soldering Temperature Tsol oC
+260 Note 3

NOTES:
1. For Tamb or Tcase > +25˚C, derate linearly to 0W at +200˚C.
2. For Variants with tin-lead plating or hot solder dip lead finish all testing performed at Tamb > +125˚C
shall be carried out in a 100% inert atmosphere.
3. Duration 10 seconds maximum at a distance of not less than 1.5mm from the device body and the
same lead shall not be resoldered until 3 minutes have elapsed.

1.6 PHYSICAL DIMENSIONS AND TERMINAL IDENTIFICATION

Metal Can Package (TO-39) - 3 lead

Seating Plane
A L
L2
L1


D D1 a 2
k
1
b j
b2 
h
P Q 
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ESCC Detail Specification No. 5201/011
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Dimensions mm
Symbols Notes
Min Max
∅a 4.83 5.35
A 6 6.6
∅b 0.4 0.533 2, 3
∅b2 0.4 0.483 2, 3
∅D 8.31 9.4
∅D1 7.75 8.51 5
h 0.229 3.18
j 0.71 0.864
k 0.737 1.14 4
L 12.7 19 2
L1 - 1.27 2, 3
L2 6.35 - 2, 3
P 2.54 - 5
Q - - 6
α 45° BSC 1, 7
β 90° BSC 1

NOTES:
1. Terminal identification is specified by reference to the tab position where Lead 1 = emitter, Lead 2
= base, and Lead 3 = collector.
2. Applies to all leads.
3. Øb2 applies between L1 and L2. Øb applies between L2 and 12.7mm from the seating plane.
Diameter is uncontrolled within L1 and beyond 12.7mm from the seating plane.
4. Measured from the maximum diameter of the actual device.
5. This zone is controlled for automatic handling. The variation in actual diameter within this zone shall
not exceed 0.254mm.
6. The details of outline in this zone are optional.
7. Measured from the Tab Centreline
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ESCC Detail Specification No. 5201/011
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1.7 FUNCTIONAL DIAGRAM

2 1. Emitter.
2. Base.
3. Collector.

1
NOTES:
1. The collector is internally connected to the case.

1.8 MATERIALS AND FINISHES

Materials and finishes shall be as follows:

a) Case
The case shall be hermetically sealed and have a metal body with hard glass seals.

b) Leads
As specified in Component Type Variants.

2. REQUIREMENTS

2.1 GENERAL
The complete requirements for procurement of the components specified herein are as stated in this
specification and the ESCC Generic Specification. Permitted deviations from the Generic Specification,
applicable to this specification only, are listed below.

Permitted deviations from the Generic Specification and this Detail Specification, formally agreed with
specific Manufacturers on the basis that the alternative requirements are equivalent to the ESCC
requirement and do not affect the component’s reliability, are listed in the appendices attached to this
specification.

2.1.1 Deviations from the Generic Specification

2.1.1.1 Deviation from Screening Tests - Chart F3

High Temperature Reverse Bias Burn-in and the subsequent Final Measurements for HTRB shall be
omitted.

2.2 MARKING
The marking shall be in accordance with the requirements of ESCC Basic Specification No. 21700 and
as follows.

The information to be marked on the component shall be:

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ESCC Detail Specification No. 5201/011
ISSUE 2 - Draft A

(a) The ESCC qualified components symbol (for ESCC qualified components only).
(b) The ESCC Component Number.
(c) Traceability information.

2.3 TERMINAL STRENGTH

The test conditions for terminal strength, tested as specified in the ESCC Generic Specification, shall be
as follows:

Test Condition: E, lead fatigue.

2.4 ELECTRICAL MEASUREMENTS AT ROOM, HIGH AND LOW TEMPERATURES

Electrical measurements shall be performed at room, high and low temperatures.

2.4.1 Room Temperature Electrical Measurements

The measurements shall be performed at Tamb=+22 ±3°C.
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ESCC Detail Specification No. 5201/011
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Characteristics Symbols MIL-STD-750 Test Conditions Limits Units

Test Method
Min Max
Collector-Base V(BR)CBO 3001 IC = 100µA, 140 - V
Breakdown Bias Condition D
Voltage
Collector-Emitter V(BR)CEO 3011 IC = 30mA, 80 - V
Breakdown Bias Condition D
Voltage Note 1
Emitter-Base V(BR)EBO 3026 IE = 100µA, 7 - V
Breakdown Bias Condition D
Voltage
Collector-Emitter ICES 3041 VCE = 90V, - 10 nA
Cut-off Current Bias Condition C
Emitter-Base Cut- IEBO 3061 VEB = 5V, - 10 nA
off Current Bias Condition D
Collector-Emitter VCE(sat)1 3071 IC=150mA - 200 mV
Saturation Voltage IB=15mA
Note 1
VCE(sat)2 3071 IC=500mA - 500 mV
IB=50mA
Note 1
Base-Emitter VBE(sat) 3066 Test Condition A - 1.1 V
Saturation Voltage IC=150mA
IB=15mA
Note 1
Forward-Current hFE1 3076 VCE=10V ; IC = 150mA 100 300 -
Transfer Ratio Note 1
hFE2 3076 VCE=10V ; IC = 100µA 50 200 -
Note 1
hFE3 3076 VCE=10V ; IC = 10mA 90 - -
Note 1
hFE4 3076 VCE=10V ; IC = 500mA 50 200 -
Note 1
hFE5 3076 VCE=10V ; IC = 1A 15 - -
Note 1
Magnitude of |hfe| 3306 VCE=10V, 5 20 −
small-signal short- IC=50mA
circuit forward- f=20MHz
current transfer Note 2
ratio

Small signal short- hfe 3206 VCE=5V, 80 400 -

circuit forward- IC=1mA
current transfer f=1kHz
ratio Note 2
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ESCC Detail Specification No. 5201/011
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Characteristics Symbols MIL-STD-750 Test Conditions Limits Units

Test Method
Min Max
Output Cobo 3236 VCB=10V, - 12 pF
Capacitance IE=0A
f=1MHz
Note 2
Input Capacitance Cibo 3240 VEB=500mV - 60 pF
IC=0A
f=1MHz
Note 2
Noise Figure NF 3246 VCE=10V, - 4 dB
IC=100µA
Rg=1kΩ
Power
Bandwidth=200kHz
Note 2
Collector-Base τCB - VCB=10V, - 400 ps
Time Constant IC=10mA
f=79.8MHz
Notes 2, 3
Pulse Response ton , toff - Notes 2, 4 - 30 ns
NOTES:
1. Pulse measurement: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%
2. For AC characteristics read and record measurements shall be performed on a sample of 32
components with 0 failures allowed. Alternatively a 100% inspection may be performed.
3. This parameter is measured by applying an RF signal voltage of 1Vrms across the collector-base
and measuring the ac voltage drop (Veb) using a high impedance RF voltmeter across the emitter-
base. The collector-base time constant is then calculated as follows: τCB (in ps) = 2 x Veb (in mV)
4. Pulse response shall be measured using the following test circuit. The input waveform shall be
supplied by a pulse generator with the following characteristics: ZOUT = 50Ω, tr ≤ 2ns, Duty Cycle ≤
2%. The output waveform shall be monitored on an oscilloscope with the following characteristics :
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ESCC Detail Specification No. 5201/011
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ZIN ≥ 100kΩ, CIN ≤ 12pF, tr ≤ 5ns.

-50V +20V

1kΩ 40Ω

OUTPUT (SAMPLING
4.7kΩ OSCILLOSCOPE)
0.1µF A

100Ω 100Ω 1kΩ/5W

Diode is 1N3064 or equivalent.

VOLTAGE WAVEFORMS

15ns

+1V

POINT A 0V

-1V ton

toff

+20V
10% 10%

OUTPUT

+2V 90%
0V
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ESCC Detail Specification No. 5201/011
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2.4.2 High and Low Temperatures Electrical Measurements

Characteristics Symbols MIL-STD-750 Test Conditions Limits Units

Test Method Note 1
Min Max
Collector-Emitter ICES 3041 Tamb=+150(+0-5)˚C - 10 µA
Cut-off Current VCE=90V,
Bias Condition C
Forward-Current hFE1 3076 Tamb=-55(+5-0)˚C 40 - -
Transfer Ratio 1 VCE=10V
IC=150mA
Note 2

NOTES:
1. Read and record measurements shall be performed on a sample of 5 components with 0 failures
allowed. Alternatively a 100% inspection may be performed.
2. Pulse measurement: Pulse Width ≤ 300µs, Duty Cycle ≤ 1%.

2.5 PARAMETER DRIFT VALUES

Unless otherwise specified, the measurements shall be performed at Tamb=+22 ±3oC.

The test methods and test conditions shall be as per the corresponding test defined in Room
Temperature Electrical Measurements.

The drift values (∆) shall not be exceeded for each characteristic specified. The corresponding absolute
limit values for each characteristic shall not be exceeded.

Characteristics Symbols Limits Units

Drift Absolute
Value
Min Max
∆

Collector-Emitter Cut-off Current ICES ±5 - 10 nA

or (1)
±100%
Forward-Current Transfer Ratio 1 hFE1 ±15% 100 300 -

NOTES:
1. Whichever is the greater referred to the initial value.

2.6 INTERMEDIATE AND END-POINT ELECTRICAL MEASUREMENTS

Unless otherwise specified, the measurements shall be performed at Tamb=+22 ±3oC.

The test methods and test conditions shall be as per the corresponding test defined in Room
Temperature Electrical Measurements.

The limit values for each characteristic shall not be exceeded.

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ESCC Detail Specification No. 5201/011
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Characteristics Symbols Limits Units

Min Max
Collector-Emitter Cut-off Current ICES - 10 nA
Forward-Current Transfer Ratio 1 hFE1 100 300 -
Collector-Emitter Saturation Voltage VCE(sat)2 - 800 mV
2

2.7 POWER BURN-IN CONDITIONS

Characteristics Symbols Conditions Units

oC
Ambient Temperature Tamb +25
Power Dissipation Ptot 800 mW
Collector-Base Voltage VCB 60 V

2.8 OPERATING LIFE CONDITIONS

The conditions shall be as specified for Power Burn-in.
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ESCC Detail Specification No. 5201/011
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APPENDIX ‘A’

AGREED DEVIATIONS FOR STMICROELECTRONICS (F)

ITEMS AFFECTED DESCRIPTION OF DEVIATIONS

Deviations from Room All AC characteristics (Room Temperature Electrical Measurement Note 2)
Temperature Electrical may be considered guaranteed but not tested if successful pilot lot testing
Measurements has been performed on the wafer lot which includes AC characteristic
measurements per the Detail Specification.

A summary of the pilot lot testing shall be provided if required by the

Purchase Order.
Deviations from High All characteristics specified may be considered guaranteed but not tested if
and Low Temperatures successful pilot lot testing has been performed on the wafer lot which
Electrical includes characteristic measurements at high and low temperatures per the
Measurements Detail Specification.

A summary of the pilot lot testing shall be provided if required by the

Purchase Order.