AO4604

Complementary Enhancement Mode Field Effect Transistor

General Description Features
The AO4604 uses advanced trench n-channel p-channel
technology MOSFETs to provide excellen VDS (V) = 30V -30V
RDS(ON) and low gate charge. The ID = 6.9A (VGS=10V) -5A (VGS = -10V)
complementary MOSFETs may be used RDS(ON) RDS(ON)
in power inverters, and other applications. < 28mΩ (VGS=10V) < 52mΩ (VGS = -10V)
AO4604 and AO4604L are electrically
< 42mΩ (VGS=4.5V) < 87mΩ (VGS = -4.5V)
identical.
-RoHS Compliant
100% Rg Tested!
-AO4604L is Halogen Free

SOIC-8 D2 D1

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1
S2 S1
SOIC-8
Top View Bottom View n-channel p-channel

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage V DS 30 -30 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 6.9 -5
Current A TA=70°C ID 5.8 -4.2 A
B
Pulsed Drain Current IDM 30 -20
TA=25°C 2 2
PD W
Power Dissipation TA=70°C 1.44 1.44
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C

Thermal Characteristics: n-channel and p-channel

Parameter Symbol Device Typ Max Units
Maximum Junction-to-AmbientA t ≤ 10s n-ch 48 62.5 °C/W
RθJA
Maximum Junction-to-AmbientA Steady-State n-ch 74 110 °C/W
C
Maximum Junction-to-Lead Steady-State RθJL n-ch 35 40 °C/W
Maximum Junction-to-AmbientA t ≤ 10s p-ch 48 62.5 °C/W
A
RθJA
Maximum Junction-to-Ambient Steady-State p-ch 74 110 °C/W
Maximum Junction-to-LeadC Steady-State RθJL p-ch 35 40 °C/W

Alpha & Omega Semiconductor, Ltd.

AO4604

N-CHANNEL: Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=24V, V GS=0V 0.004 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 1.9 3 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 20 A
VGS=10V, ID=6.9A 22.5 28
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 31.3 38
VGS=4.5V, ID=5.0A 34.5 42 mΩ
gFS Forward Transconductance VDS=5V, ID=6.9A 10 15.4 S
VSD Diode Forward Voltage IS=1A 0.76 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 680 820 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 102 pF
Crss Reverse Transfer Capacitance 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.2 2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 13.84 17 nC
Qg(4.5V) Total Gate Charge 6.74 8.1 nC
VGS=10V, V DS=15V, ID=6.9A
Qgs Gate Source Charge 1.82 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 4.6 ns
tr Turn-On Rise Time VGS=10V, V DS=15V, R L=2.2Ω, 4.1 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 20.6 ns
tf Turn-Off Fall Time 5.2 ns
trr Body Diode Reverse Recovery Time IF=6.9A, dI/dt=100A/µs 16.5 20 ns
Qrr Body Diode Reverse Recovery Charge IF=6.9A, dI/dt=100A/µs 7.8 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
Rev 4: Jan 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AO4604

N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 20
10V 6V
25 5V
16 VDS=5V
4.5V
4V
20
12
ID (A)

ID(A)
15
3.5V
8
10
125°C
5 VGS=3V
4
25°C
0
0
0 1 2 3 4 5
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
VDS (Volts)
VGS (Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

60 1.6
VGS=10V
1.5 ID=5A
Normalized On-Resistance

50
1.4
VGS=4.5V VGS=4.5V
RDS(ON) (mΩ )

1.3
40
1.2
30 1.1

1
20 VGS=10V
0.9

10 0.8
0 5 10 15 20 0 50 100 150 200

ID (Amps) Temperature ( °C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

70 1.0E+01

1.0E+00
60 ID=5A
1.0E-01
IS Amps

50
RDS(ON) (mΩ )

125°C 1.0E-02
125°C
40 1.0E-03

1.0E-04 25°C
30
25°C
1.0E-05
20
0.0 0.2 0.4 0.6 0.8 1.0
VSD (Volts)
10
Figure 6: Body diode characteristics
2 4 6 8 10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage

Alpha & Omega Semiconductor, Ltd.

AO4604

N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
VDS=15V f=1MHz
900
ID=6.9A VGS=0V
8 800

Capacitance (pF)
700
VGS (Volts)

6 600 Ciss
500
4 400
300
2 200 Coss
100
Crss
0 0
0 2 4 6 8 10 12 14 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge characteristics Figure 8: Capacitance Characteristics

100 40
TJ(Max)=150°C
TJ(Max)=150°C
RDS(ON) TA=25°C
TA=25°C
limited
100µs 30
10 1ms 10µs
ID (Amps)

Power W

10ms
20
0.1s
1
1s
10
10s
DC
0.1 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note E) Ambient (Note E)

10
D=T on/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

TJ,PK=T A+PDM.ZθJA.RθJA
Thermal Resistance

RθJA=62.5°C/W
1

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4604

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge

R e s is tiv e S w itch in g T e s t C irc u it & W a v e fo rm s

RL
Vds
Vds

90%
DUT
+ V dd
Vgs VDC

Rg - 10%

V gs Vgs t d (o n ) tr t d (o ff) tf

ton t o ff

D io d e R e c o v e ry T e st C irc u it & W a ve fo rm s

Vds + Q rr = - Id t
DUT
Vgs

t rr
Vds - L Isd IF
Isd d I/d t
+ Vdd
I RM
Vgs VD C
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd.

AO4604

P-CHANNEL: Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -30 V
VDS=-24V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 -1.8 -3 V
ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 A
VGS=-10V, ID=-5A 39 52
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 54 70
VGS=-4.5V, I D=-4A 67 87 mΩ
gFS Forward Transconductance VDS=-5V, ID=-5A 6 8.6 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.77 -1 V
IS Maximum Body-Diode Continuous Current -2.8 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 700 900 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 120 pF
Crss Reverse Transfer Capacitance 75 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 10 15 Ω
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge (10V) 14.7 19 nC
Qg (4.5V) Total Gate Charge (4.5V) 7.6 10 nC
VGS=-10V, VDS=-15V, ID=-5A
Qgs Gate Source Charge 2 nC
Qgd Gate Drain Charge 3.8 nC
tD(on) Turn-On DelayTime 8.3 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, RL=3Ω, 5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 29 ns
tf Turn-Off Fall Time 14 ns
trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/µs 23.5 30 ns
Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 13.4 nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev 4: Jan 2009

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AO4604

P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

20 10
-10V -6V -5V

-4.5V VDS=-5V
8
15
-4V
6
-ID (A)

-ID(A)
10
-3.5V
4 125°C

5 VGS=-3V
2 25°C
-2.5V
0 0
0.00 1.00 2.00 3.00 4.00 5.00 0 1 2 3 4
-VDS (Volts) -VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

100 1.60E+00
VGS=-4.5V
Normalized On-Resistance

80 1.40E+00 VGS=-10V
VGS=-4.5V
RDS(ON) (mΩ )

60
1.20E+00
VGS=-10V

40 ID=-5A
1.00E+00

20
1 3 5 7 9 8.00E-01
-ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

160 1E+01

140 ID=-5A 1E+00

120 1E-01 125°C

RDS(ON) (mΩ )

100 1E-02
-IS (A)

80 125°C 1E-03
25°C
60 1E-04

40 25°C 1E-05

20 1E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4604

P-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=-15V
ID=-5A 1000
8 Ciss

Capacitance (pF)
800
-VGS (Volts)

6
600
4
400
Coss
2
200
Crss
0 0
0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 TJ(Max)=150°C 40
TA=25°C TJ(Max)=150°C
10µs TA=25°C
RDS(ON) 30
10 100µs
limited
-ID (Amps)

Power (W)

1ms
20
0.1s 10ms
1
1s 10
10s
DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=T on/T In descending order
TJ,PK=T A+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4604

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

R e sistive S w itch in g T e st C ircuit & W a ve fo rm s

RL
V ds t on t o ff

td(on ) tr t d(o ff) tf

V gs
-
V gs DUT V DC
V dd 90%
Rg
+

V gs 10%
V ds

D iod e R ecove ry T est C ircu it & W ave form s

V ds + Q rr = - Idt
DUT
V gs

t rr
V ds - L -Isd -I F
Isd d I/d t
+ Vdd -I R M
V gs VD C
Vdd
Ig
- -V ds

Alpha & Omega Semiconductor, Ltd.