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    Vcbo Vceo Vebo Ig Ib PC: I, LJNC

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    Julian Bourne
    This document provides specifications for the Toshiba 2SA970 transistor, including: 1) It is a low noise audio amplifier transistor with typical noise figures of 3dB and 0.5dB at 1kHz. 2) It has a high DC current gain of 200-700 and breakdown voltage of -12V. 3) The document lists maximum ratings, electrical characteristics, and packaging information for the 2SA970 transistor.

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    Vcbo Vceo Vebo Ig Ib PC: I, LJNC

    Uploaded by

    Julian Bourne
    39 views1 page
    This document provides specifications for the Toshiba 2SA970 transistor, including: 1) It is a low noise audio amplifier transistor with typical noise figures of 3dB and 0.5dB at 1kHz. 2) It has a high DC current gain of 200-700 and breakdown voltage of -12V. 3) The document lists maximum ratings, electrical characteristics, and packaging information for the 2SA970 transistor.

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    2SA970

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    2SA970

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    This document provides specifications for the Toshiba 2SA970 transistor, including: 1) It is a low noise audio amplifier transistor with typical noise figures of 3dB and 0.5dB at 1kHz. 2) It has a high DC current gain of 200-700 and breakdown voltage of -12V. 3) The document lists maximum ratings, electrical characteristics, and packaging information for the 2SA970 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    39 views1 page

    Vcbo Vceo Vebo Ig Ib PC: I, LJNC

    Uploaded by

    Julian Bourne
    This document provides specifications for the Toshiba 2SA970 transistor, including: 1) It is a low noise audio amplifier transistor with typical noise figures of 3dB and 0.5dB at 1kHz. 2) It has a high DC current gain of 200-700 and breakdown voltage of -12V. 3) The document lists maximum ratings, electrical characteristics, and packaging information for the 2SA970 transistor.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    i, LJnc.

    20 STERN AVE. TELEPHONE: (973) 376-2922


    SPRINGFIELD, NEW JERSEY 07081 (212) 227-6005
    U.S.A. FAX: (973) 376-8960
    TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)

    2SA970
    LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm

    Low Noise
    :NF = 3dB(Typ.) RQ
    :NF = 0.5dB(Typ.) R . f=lkHz
    High DC Current Gain : !IFE = 200-700
    High Breakdown Voltage :VcEO = - 12 ° v
    Low Pulse Noise, Low 1 / f Noise
    1.27
    MAXIMUM RATINGS (Ta = 25°C)
    CHARACTERISTIC SYMBOL RATING UNIT
    Collector-Base Voltage VCBO -120 V
    Collector-Emitter Voltage VCEO -120 V
    Emitter-Base Voltage VEBO -5 V 1. EMITTER
    Collector Current IG -100 mA 2.
    3.
    COLLECTOR
    BASE
    Base Current IB -20 mA
    JEDEC TO-92
    Collector Power Dissipation PC 300 mW
    Junction Temperature Tj 125 °C EIAJ SC-43
    Storage Temperature Range Tstg -55-125 °C
    ELECTRICAL CHARACTERISTICS (Ta = 25°C)
    Weight : 0.21g

    CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT


    Collector Cut-off Current ICBO V C B=-120V, IE = 0
    — —
    -0.1 M
    Emitter Cut-off Current IEBO V EB =-5V, IC = 0
    —
    — -0.1 M
    Collector-Emitter V
    Breakdown Voltage V (BR) CEO IC=-lmA, IB = O -120 — —
    DC Current Gain hpE (Note) V CE =-6V, Ic=-2mA 200 — 700
    Collector-Emitter IQ = ~ 10mA, IB = - 1mA -0.3
    VCE (sat) — — V
    Saturation Voltage
    Base-Emitter Voltage VBE VCE = -6V, I C =-2mA
    —
    0.65
    —
    V
    Transition Frequency fT V CE =-6V, I C =-lmA — 100 — MHz
    Collector Output Capacitance Cob
    V CB =-IOV, I E =O, 4.0 PF
    f = 1MHz — —
    VCE = -6V, Ic = -O.lmA, — — 6
    f=10Hz, Rc = 10kn
    Noise Figure V CE =-6V, I C = - 0.1mA, 2 dB
    NF f=lkHz, RG=10kH — —
    VCE = -6V, Ic = -O.lmA, 3
    f=lkHz, Rc=100n — —
    Note : KFE Classification GR : 200-400, BL : 350-700

    NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
    notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
    to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
    NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

    Quality Semi-Conductors

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