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    Power Semiconductor Devices

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    saakhi4135
    This document discusses power semiconductor devices and their history. It notes that power electronics involves studying power devices, converter topologies, control strategies, and other factors. It then discusses the history of power devices, including the development of the silicon controlled rectifier in the 1950s, and the later need for devices with turn-off capabilities. Finally, it classifies current power devices as diodes, thyristors, or controllable switches including various transistor types that can be turned on and off by control signals.

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    Power Semiconductor Devices

    Uploaded by

    saakhi4135
    66 views2 pages
    This document discusses power semiconductor devices and their history. It notes that power electronics involves studying power devices, converter topologies, control strategies, and other factors. It then discusses the history of power devices, including the development of the silicon controlled rectifier in the 1950s, and the later need for devices with turn-off capabilities. Finally, it classifies current power devices as diodes, thyristors, or controllable switches including various transistor types that can be turned on and off by control signals.

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    This document discusses power semiconductor devices and their history. It notes that power electronics involves studying power devices, converter topologies, control strategies, and other factors. It then discusses the history of power devices, including the development of the silicon controlled rectifier in the 1950s, and the later need for devices with turn-off capabilities. Finally, it classifies current power devices as diodes, thyristors, or controllable switches including various transistor types that can be turned on and off by control signals.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    66 views2 pages

    Power Semiconductor Devices

    Uploaded by

    saakhi4135
    This document discusses power semiconductor devices and their history. It notes that power electronics involves studying power devices, converter topologies, control strategies, and other factors. It then discusses the history of power devices, including the development of the silicon controlled rectifier in the 1950s, and the later need for devices with turn-off capabilities. Finally, it classifies current power devices as diodes, thyristors, or controllable switches including various transistor types that can be turned on and off by control signals.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 2

    Power Semiconductor Devices

    Power Electronics is the art of converting electrical energy from one form to another in an
    efficient, clean, compact, and robust manner for convenient utilization.

    Power Electronics involves the study of


    • Power semiconductor devices - their physics, characteristics, drive requirements and their
    protection for optimum utilization of their capacities,
    • Power converter topologies involving them,
    • Control strategies of the converters,
    • Digital, analogue and microelectronics involved,
    • Capacitive and magnetic energy storage elements,
    • Rotating and static electrical devices,
    • Quality of waveforms generated,
    • Electro Magnetic and Radio Frequency Interference,
    • Thermal Management

    Power Semiconductor devices - History & Developments


    Power electronics and converters utilizing them made a head start when the first device
    the Silicon Controlled Rectifier was proposed by Bell Labs and commercially produced by
    General Electric in the earlier fifties. The Mercury Arc Rectifiers were well in use by that time
    and the robust and compact SCR first started replacing it in the rectifiers and cycloconverters.
    The necessity arose of extending the application of the SCR beyond the line-commutated mode
    of action, which called for external measures to circumvent its turn-off incapability via its
    control terminals. Various turn-off schemes were proposed and their classification was suggested
    but it became increasingly obvious that a device with turn-off capability was desirable, which
    would permit it a wider application. The turn-off networks and aids were impractical at higher
    powers.
    Ratings have been progressively increasing for all devices while the newer devices offer
    substantially better performance. With the SCR and the pin-diodes, so called because of the
    sandwiched intrinsic ‘i’-layer between the ‘p’ and ‘n’ layers, having mostly line-commutated
    converter applications, emphasis was mostly on their static characteristics - forward and reverse
    voltage blocking, current carrying and over-current ratings, on-state forward voltage etc and also
    on issues like paralleling and series operation of the devices. As the operating speeds of the
    devices increased, the dynamic (switching) characteristics of the devices assumed greater
    importance as most of the dissipation was during these transients. Attention turned to the
    development of efficient drive networks and protection techniques which were found to enhance
    the performance of the devices and their peak power handling capacities. Issues related to
    paralleling were resolved by the system designer within the device itself like in MOSFETS,
    while the converter topology was required to take care of their series operation as in multi-level
    converters.

    Presently available power semiconductor devices can be classified into three groups according
    to their degree of controllability
     Diodes-on and off states controlled by the power circuit.
     Thyristors-latched on by a control signal but must be turned off by the power circuit.
     Controllable switches-turned on and off by the control signals.
    The controllable switch category includes several device types including bipolar junction
    transistors(BJTs),metal-oxide-semiconductor field effect transistors(MOSFETs),gate turn off
    thyristors(GTOs),and insulated bipolar transistors(IGBTs). There have been many advances in
    recent years in this category of devices.

    N.S.SAHITYA SEKHAR
    09MPE023

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