Dual Operational Amplifiers: Product Description Features
Dual Operational Amplifiers: Product Description Features
Dual Operational Amplifiers: Product Description Features
JAN. 2010
Block Diagram
VCC
INVERTING
INPUT
OUTPUT
NON-INVERTING
INPUT
GS358
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Pin Assignments
OUTPUT A 1 8 VCC
INVERTING
INPUT A 2 7 OUTPUT B
-
A+ +
B-
NON-INVERTING
INPUT A 3 6 INVERTING
INPUT B
GND 4 5 NON-INVERTING
INPUT B
TOP VIEW
Ordering Information
Device Package
GS358PF DIP-8
GS358SF SOP-8
Marking Information
GS358
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Absolute Maximum Ratings
Symbol Parameter Value Unit
VCC Single Supply 32 V
VCC, VEE Split Supply ±16 V
VIDR Input Differential Voltage Range ±32 V
IOS Output Short-circuit to GND Continuous
TJ Junction Temperature 150 ºC
TSTG Storage Temperature Range -65 to +150 ºC
TA Operating Ambient Temperature Range 0 to 70 ºC
DIP-8 125
θJA Thermal Resistance ( Junction to Ambient ) ºC/W
SOP-8 160
DIP-8 42
θJC Thermal Resistance ( Junction to Case ) ºC/W
SOP-8 22
ESD ESD Rating (HBM) 2 KV
GS358
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Electrical Characteristics
at specified free-air temperature, VCC=5V (Unless Otherwise Noted)
VID = -1V,
25ºC 12 30 μA
Vo = 200mV
VCC at 5V,
Short-circuit
IOS GND at –5V, 25ºC ±40 ±60 mA
output current
Vo = 0V
GS358
Vo =2.5V,
Full range 0.7 1.2
No load
Supply current
ICC VCC = MAX, mA
(two amplifiers)
Vo = 0.5Vcc, Full range 1 2
No load
*All characteristics are measured under open-loop conditions with zero common-mode input voltage unless
otherwise specified. “MAX” VCC for testing Purposes is 30V. Full range is 0ºC to 70ºC
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Typical Performance Characteristics
Input Voltage Range Input Current
90
15 VCM =0VDC
VIN-INPUT VOLTAGE(VDC)
IB - INPUT CURRENT(nADC)
80
70
60 V =30VDC
10
N E G A T IV E 50
P O S IT IV E
40 V =15VDC
5 30
20 V =5VDC
10
0 5 10 15 0
-55 -35 -15 5 25 45 65 85 105 125
V O R V -P O W E R S U P P L Y
V O L A T A G E ( V D C )
TA - TEMPERATURE(C
C)
160
ID - SUP PL Y CURRE NT DRAIN(mA
4
V
AVOL-VOLTAGE GAIN(dB)
mA ID
120
RL=20KΩ
RL=20K
3
RL=2K
RL=2KΩ
2 80
1 T A =0 C TO +12 5 C
C 40
TA =-55 C
C
0 10 20 30 0 10 20 30 40
V -S UPP LY V OL TA G E(VDC ) V -SUPPLY VOLTAGE(V DC)
160
10M 120
0.1F
AVOL-VOLTAGE GAIN(dB)
120 V 100
REJECTION RATION(dB)
CMRR-COMMON MODE
VO
100 V IN V /2
80
80
60 1K
V =30V DC 1K
60 CT A+125C
-55C C +15V
40 100
100Ω VO
40 1K BUFFER
GS358
0 0
1.0 10 100 1K 10K 100K 1M 10M 100 1K 10K 100K 1M
f -FREQUENCY(Hz) f -FREQUENCY(Hz)
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Typical Performance Characteristics (Continue)
Voltage Follower Pulse Response Voltage Follower Pulse Response(Small Signal)
INP UT V OL TAGE O UTPUT VO LTAG E
4 500
2.0KΩ
R L2.0 K
eo-OUTPUT VOLTAGE(mA)
3 eo
450
V OUT(V )
V = 15 VD C
2 ein 50pF
1 400
INTPUT
0
350
3
OUTPUT
2
V IN(V )
300
1 V =+30V DC
250 TA =25C
C
0 10 20 30 40 0 1 2 3 4 5 6 7 8
t - TIM E ( s) t - TIME(s)
20
100K 8
VO- OUTPUT SWING(VP-P)
REFERENCED TO V (VDC)
1K 15VDC
VO 7
15 V
V =OUTPUT VOLTAGE
V IN
7VDC 2K 6
V
V /2
5 IO
10
4
5 3
INDEPENDENT OF V
2 T A=25C
C
0 1
1K 10K 100K 1M 0.001 0.01 0.1 1 10 100
f -F R E Q U E N C Y (H z ) IO- OUTPUT SOURCE CURRENT(mADC)
D C) DC)
10 90
VOLTAGE(mV
(mA
LTAG E(V
80
V =5V D C IO
V =15V D C 70
1 V =30V D C 60
VO - OUTP UT VO
50
V
40
0.1 IO
30
GS358
V /2
VO 20
C
T A =25C 10
0.01
0.001 0.01 0.1 1 10 100 0
-55 -35 -15 5 25 4 5 65 8 5 10 5 12 5
IO -OUT PUT S IN K CURRENT(mA D C ) TA - TEMPERATURE(C
C)
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Package Dimension
E/2 θ2
E1/2 R1
E1 E R
GAUGE
PLANE
θ1
PIN 1 θ L2
MARKING
e b
h
c
A A2
A1
Dimensions
Millimeters Inches
SYMBOL
MIN MAX MIN MAX
A 1.35 1.75 .053 .069
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DIP-8 PLASTIC PACKAGE
E
G
1/2 e GAUGE
PLANE
PIN 1
MARKING E1 c
b2
ec
D A2 E
A1
BASE PLANE A
SEATING PLANE
D1 b eA
1/2 LEAD
4 PLACES e eB
b3
Dimensions
Millimeters Inches
SYMBOL
MIN MAX MIN MAX
A - 5.33 - .210
A1 0.38 - .015 -
A2 2.92 4.95 .115 .195
b 0.36 0.56 .014 .022
b2 1.14 1.78 .045 .070
b3 0.76 1.14 .030 .045
c 0.20 0.36 .008 .014
D 9.02 10.16 .355 .400
D1 0.13 - .005 -
E 7.62 8.26 .300 .325
E1 6.10 7.11 .240 .280
e 2.54 (TYP) .100 (TYP)
eA 7.62 (TYP) .300 (TYP)
GS358
eB - 10.92 - .430
eC 0.00 1.52 .000 .060
L 2.92 3.81 .115 .150
G 0.38 (TYP) .015 (TYP)
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NOTICE
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responsibility for the consequences of use of such information nor for any infringement of patents or other rights of
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patent rights of Globaltech Semiconductor. Specifications mentioned in this publication are subject to change
without notice. This publication supersedes and replaces all information without express written approval of
Globaltech Semiconductor.
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