Scribd Logo
Upload

Welcome to Scribd!

  • 47 views

    P-Channel Enhancement Mode Vertical Dmos Fet: Absolute Maximum Ratings

    Uploaded by

    syed umarjunaid
    This document provides specifications for a 45V P-channel enhancement mode vertical DMOS FET. Key specifications include a maximum drain-source voltage of -45V, continuous drain current of -230mA, and on-state resistance of 14 ohms. The FET has a gate-source threshold voltage between -1V and -3.5V and turn-on and turn-off times of 20ns.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    P-Channel Enhancement Mode Vertical Dmos Fet: Absolute Maximum Ratings

    Uploaded by

    syed umarjunaid
    47 views1 page
    This document provides specifications for a 45V P-channel enhancement mode vertical DMOS FET. Key specifications include a maximum drain-source voltage of -45V, continuous drain current of -230mA, and on-state resistance of 14 ohms. The FET has a gate-source threshold voltage between -1V and -3.5V and turn-on and turn-off times of 20ns.

    Original Description:

    Details of transistors

    Original Title

    BS250P

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for a 45V P-channel enhancement mode vertical DMOS FET. Key specifications include a maximum drain-source voltage of -45V, continuous drain current of -230mA, and on-state resistance of 14 ohms. The FET has a gate-source threshold voltage between -1V and -3.5V and turn-on and turn-off times of 20ns.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    47 views1 page

    P-Channel Enhancement Mode Vertical Dmos Fet: Absolute Maximum Ratings

    Uploaded by

    syed umarjunaid
    This document provides specifications for a 45V P-channel enhancement mode vertical DMOS FET. Key specifications include a maximum drain-source voltage of -45V, continuous drain current of -230mA, and on-state resistance of 14 ohms. The FET has a gate-source threshold voltage between -1V and -3.5V and turn-on and turn-off times of 20ns.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    P-CHANNEL ENHANCEMENT

    MODE VERTICAL DMOS FET BS250P


    ISSUE 2 – SEPT 93
    FEATURES
    * 45 Volt VDS
    * RDS(on)=14Ω

    D
    G
    S
    REFER TO ZVP2106A FOR GRAPHS
    E-Line
    TO92 Compatible
    ABSOLUTE MAXIMUM RATINGS.
    PARAMETER SYMBOL VALUE UNIT
    Drain-Source Voltage VDS -45 V
    Continuous Drain Current at Tamb =25°C ID -230 mA
    Pulsed Drain Current I DM -3 A
    Gate-Source Voltage VGS ±20 V

    Power Dissipation at Tamb =25°C Ptot 700 mW


    Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C

    ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).


    PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

    Drain-Source BVDSS -45 V ID=-100µ A, VGS=0V


    Breakdown Voltage

    Gate-Source VGS(th) -1 -3.5 V ID=-1mA, VDS=VGS


    Threshold Voltage

    Gate Body Leakage IGSS -20 nA VGS=-15V, VDS=0V

    Zero Gate Voltage IDSS -500 nA VGS=0V, VDS=-25V


    Drain Current

    Static Drain-Source RDS(on) 14 Ω VGS=-10V, ID=-200mA


    on-State Resistance (1)

    Forward gfs 150 mS VDS=-10V, ID=-200mA


    Transconductance (1)(2)

    Input Capacitance (2) Ciss 60 pF VGS=0V, VDS=-10V


    f=1MHz

    Turn-On Time (2)(3) t(on) 20 ns VDD≈ -25V, ID=-500mA

    Turn-Off Time (2)(3) t(off) 20 ns

    (1) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% (2) Sample test
    (3) Switching times measured with a 50Ω source impedance and <5ns rise time on a pulse generator
    3-28

    You might also like