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    Rough Report 1

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    sreekumar456
    This document discusses memristor-based multilevel memory. It begins by introducing memristors and their advantages over other memory technologies, such as much smaller size and ability to store analog information with multiple bits per cell. It then describes challenges in using memristors for multilevel memory, such as nonlinearity in their resistance-charge relationship. The document proposes a method to address these challenges using a reference resistance array to force memristors to stick at predetermined resistance values, enabling their use as multilevel memory. Circuits are proposed for writing to and reading from/restoring the memristor memory using the reference resistance technique.

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    Rough Report 1

    Uploaded by

    sreekumar456
    34 views4 pages
    This document discusses memristor-based multilevel memory. It begins by introducing memristors and their advantages over other memory technologies, such as much smaller size and ability to store analog information with multiple bits per cell. It then describes challenges in using memristors for multilevel memory, such as nonlinearity in their resistance-charge relationship. The document proposes a method to address these challenges using a reference resistance array to force memristors to stick at predetermined resistance values, enabling their use as multilevel memory. Circuits are proposed for writing to and reading from/restoring the memristor memory using the reference resistance technique.

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    This document discusses memristor-based multilevel memory. It begins by introducing memristors and their advantages over other memory technologies, such as much smaller size and ability to store analog information with multiple bits per cell. It then describes challenges in using memristors for multilevel memory, such as nonlinearity in their resistance-charge relationship. The document proposes a method to address these challenges using a reference resistance array to force memristors to stick at predetermined resistance values, enabling their use as multilevel memory. Circuits are proposed for writing to and reading from/restoring the memristor memory using the reference resistance technique.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOC, PDF, TXT or read online from Scribd
    Download as doc, pdf, or txt
    34 views4 pages

    Rough Report 1

    Uploaded by

    sreekumar456
    This document discusses memristor-based multilevel memory. It begins by introducing memristors and their advantages over other memory technologies, such as much smaller size and ability to store analog information with multiple bits per cell. It then describes challenges in using memristors for multilevel memory, such as nonlinearity in their resistance-charge relationship. The document proposes a method to address these challenges using a reference resistance array to force memristors to stick at predetermined resistance values, enabling their use as multilevel memory. Circuits are proposed for writing to and reading from/restoring the memristor memory using the reference resistance technique.

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    Memristor Based

    Multilevel Memory
    Memristor Based Multilevel Memory
    In anticipating the end of Moore’s law a decade from now, many new approaches
    to extend the end of this law have been proposed by the memory industry. One
    approach is to develop the Multi-Level Cell (MLC) technology which stores
    multiple bits in a multilevel form of information in a memory element.

    Commercially available MLC NAND memories can store four states per cell in
    the current technology. Most approaches are the transistor-based PRAM (Phase
    Change RAM) , except HP’s resistance-based RRAM .

    Recently, Stanley Williams et al. from HP had developed a remarkable memory


    element called memristor which is based on the pinched hysteresis loop exhibited
    by Titanium Dioxide thin films, when sandwiched between Platinum electrodes.

    The memristor was postulated by Leon O. Chua as the fourth basic element of
    electrical circuits in 1971. It is based on the nonlinear characteristics of the electro-
    magnetic mechanism in nature.

    ADVANTAGES

    There are several advantages of the memristor memory over conventional


    transistor-based memories. One is its strikingly small size. Though memristor is
    still at its early development stage, its size is at most one tenths of its RAM
    counterparts. If the fabrication technology for memristor is improved, the size and
    advantage could be even more significant.

    Another feature of the memristor is its incomparable potential to store analog


    information which enables the memristor to keep multiple bits of information in a
    memory cell.

    PRACTICAL DIFFICULTIES AND IMPLEMENTATION


    A method to utilize the memristor as a multilevel memory has been proposed.
    There are several roadblocks in the practical use of memristors for multilevel
    memory.

    A difficulty comes from the nonlinearity in the φ vs. q curve which makes it
    difficult to determine the proper pulse width for desired resistance values. Another
    one comes from the property of the memristor which integrates any kind of signals
    including noise that appeared at the memristor and causes memristors to be
    perturbed from their original values.

    The proposed method enables the memristor to be used as multilevel memory


    using a reference resistance array by forcing the memristor to stick at a set of
    predetermined fixed reference resistance values. We propose the write-in
    (programming) circuit and the read-out/restoration circuit which share the
    information storing technique using the reference resistance array.

    REFERENCE RESISTANCE ARRAY-BASED


    MULTILEVEL MEMORY OF MEMRISTOR

    The proposed method has the operating point of the memristor be maintained its
    desired location (or resistance value) utilizing a set of pre-determined multiple
    resistance levels. Fig. 3 shows the basic idea of the proposed method, where the
    Resistance array to be referenced and the memristor to be programmed (tuned) are
    shown. The goal is to have the memristor keep any of the resistance level selected
    from the resistance array.

    If a predetermined magnitude of the current Pulse I s(t ) is applied to the


    resistance array, different levels of voltages Vk will appear at each node of the
    resistance array. The same current pulse I s(t ) is also applied to the memristor.
    The programming (tuning) of the memristor is performed by
    applying additional current pulses to the memristor with the appropriate directions
    until the voltage of the memristor equals to that of the selected node voltage in the
    resistance array. If the voltage of the memristor reaches that of the selected node,
    the resistance value of the memristor becomes the same as the partial sum of the
    resistance from the ground to the selected node of the resistance array.

    This idea is employed in both the “write-in” and the “read-


    out/restoration” circuits. Detailed description of these circuits will be presented in
    the following sections.

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