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This technical information specifies semiconductor devices but promises no

characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.

1 30-09-2008 MHW © by SEMIKRON

SKHI 22 A / B (R) ...
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This technical information specifies semiconductor devices but promises no

characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.

1 30-09-2008 MHW © by SEMIKRON

SKHI 22 A / B H4 (R) ...
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This technical information specifies semiconductor devices but promises no

characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.

1 30-09-2008 MHW © by SEMIKRON

External Components

Component Function Recommended Value

RCE Reference voltage for VCE-monitoring 10kΩ < RCE < 100kΩ
10 ⋅ R CE ( kΩ )
V CEstat ( V ) = ------------------------------------ – 1,4 (1) 18kΩ for SKM XX 123 (1200V)
10 + R CE ( kΩ )
36kΩ for SKM XX 173 (1700V)

with RVCE = 1kΩ (1700V IGBT):

10 ⋅ R CE ( kΩ )
V CEstat ( V ) = ------------------------------------ – 1,8 (1.1)
10 + R CE ( kΩ )

CCE Inhibit time for VCE - monitoring CCE < 2,7nF

15 – V CEstat ( V )
t min = τ CE ⋅ ln ---------------------------------------- (2) 0,33nF for SKM XX 123 (1200V)
10 – V CEstat ( V ) 0,47nF for SKM XX 173 (1700V)

0,5μs < tmin < 10μs

10 ⋅ R CE ( kΩ )
τ CE ( μs ) = C CE ( nF ) ⋅ ------------------------------------ (3)
10 + R CE ( kΩ )

RVCE Collector series resistance for 1700V 1kΩ / 0,4W

IGBT-operation
RERROR Pull-up resistance at error output 1kΩ < RERROR < 10kΩ
U Pull – Up
----------------------- < 15mA
R ERROR

RGON Turn-on speed of the IGBT 4) RGON > 3Ω

RGOFF Turn-off speed of the IGBT 5) RGOFF > 3Ω

4)
Higher resistance reduces free-wheeling diode peak recovery current, increases IGBT turn-on time.
5)
Higher resistance reduces turn-off peak voltage, increases turn-off time and turn-off power dissipation

© by SEMIKRON 30-09-2008 Driver Electronic – PCB Drivers 2

PIN array
Fig. 2 shows the pin arrays. The input side (primary side) comprises 10 inputs (SKHI 22A / 21A 8 inputs), forming the
interface to the control circuit (see fig.1).

The output side (secondary side) of the hybrid driver shows two symmetrical groups of pins with 4 outputs, each forming
the interface to the power module. All pins are designed for a grid of 2,54 mm.

Primary side PIN array

PIN No. Designation Explanation
P14 GND / 0V related earth connection for input signals
P13 VS + 15V ± 4% voltage supply
P12 VIN1 switching signal input 1 (TOP switch)
positive 5V logic (for SKHI22A /21A, 15V logic)
P11 free not wired
P10 /ERROR error output, low = error; open collector output; max 30V / 15mA
(for SKHI22A /21A, internal 10kΩ pull-up resistor versus VS)
P9 TDT2 signal input for digital adjustment of interlocking time;
SKHI22B: to be switched by bridge to GND (see fig. 3)
SKHI22A /21A: to be switched by bridge to VS
P8 VIN2 switching signal input 2 (BOTTOM switch);
positive 5V logic (for SKHI22A /21A, 15V logic)
P7 GND / 0V related earth connection for input signals
P6 SELECT signal input for neutralizing locking function;
to be switched by bridge to GND
P5 TDT1 signal input for digital adjustment of locking time;
to be switched by bridge to GND

ATTENTION: Inputs P6 and P5 are not existing for SKHI 22A/ 21A. The contactor tracks of the digital input signals P5/
P6/ P9 must not be longer than 20 mm to avoid interferences, if no bridges are connected.

Secondary side PIN array

PIN No. Designation Explanation
S20 VCE1 collector output IGBT 1 (TOP switch)
S15 CCE1 reference voltage adjustment with RCE and CCE
S14 GON1 gate 1 RON output
S13 GOFF1 gate 1 ROFF output
S12 E1 emitter output IGBT 1 (TOP switch)
S1 VCE2 collector output IGBT 2 (BOTTOM switch)
S6 CCE2 reference voltage adjustment with RCE and CCE
S7 GON2 gate 2 RON output
S8 GOFF2 gate 2 ROFF output
S9 E2 emitter output IGBT 2 (BOTTOM switch)

ATTENTION: The connector leads to the power module should be as short as possible.

3 Driver Electronic – PCB Drivers 30-09-2008 © by SEMIKRON

 Isolation
over
input1 6k8/100 current S20 VCE* * * RVCE
(TOP) V iT
P12 3k2 3 output1
-input buffer S15 RCE C CE (TOP)
-short pulse
input2 supression VS
(BOTTOM) 6k8/100 -pulse shaper =

© by SEMIKRON 30-09-2008
ViB =
P8 S14 Ron 4
P7 3k2 Power
GND/OV Roff
GND/OV driver S13
5
P14
TDT2 P9 over S12 1 LOAD
* ** current S1 VCE** RVCE
TDT1 P5 -interlock output2
*** -deadtime *
SELECT P6 VS S6 RCE C CE (BOTTOM
V =
* * * VS
Error P10 =
S7 R on 6
RERROR -Vs monitor
-Error monitor Power
driver S8 R off
7
-Error memory
VS V S9 2
P13 S integrated in ASIC
SEMITRANS
input primary side secondary side output IGBT-Module

* When SKHI22B is driving 1700V IGBTs, a 1kΩ / 0,4W RVCE-resistor must be connected in series to the VCE input.

Driver Electronic – PCB Drivers

** The VCE-terminal is to be connected to the IGBT collector C. If the VCE-monitoring is not used, connect S1 to S9 or S20 to S12 respectively.
*** Terminals P5 and P6 are not existing for SKHI22A/21A; internal pull-up resistor exists in SKHI22A/21A only.
1-7 Connections to SEMITRANS GB-module

4
 VCE
OUT1

CCE
GND/0V GON
VS GOFF

SKHI XX Y
V IN1 E
±0.2

Date - Code
55

ERROR
TDT2 E
V IN2 GOFF
GND/0V GON
SELECT CCE
TDT1
R2

OUT2
VCE

55 ±0.2
detail "A" on scale 10 : 1
50.8 0.25x0.5
±0.3

measured from pin-centre to pin-centre

A
9.5

15
16

±0.5
3.5
15.75 18.25
±0.3
3.37

S1
±0.3
13.53

P5

P6 S6

S9
22.86

48.26
2.54

S12
P13

P14 S15

A A
S20

Fig. 2 Dimension drawing and PIN array (P5 and P6 are not existing for SKHI22A/21A)

5 Driver Electronic – PCB Drivers 30-09-2008 © by SEMIKRON

SEMIDRIVERTM The driver is connected to a controlled + 15 V-supply
voltage. The input signal level is 0/15 V for the SKHI 22A/
21A and 0/5 V for the SKHI 22B.
SKHI 22A / 22B und SKHI 21A
In the following explanations the whole driver family will be
Hybrid dual drivers designated as SKHI 22B. If a special type is referred to,
The driver generation SKHI 22A/B and SKHI 21A will the concerned driver version will explicitly be named.
replace the hybrid drivers SKHI 21/22 and is suitable for all
available low and medium power range IGBT and Technical explanations1
MOSFETs.
The SKHI 22A (SKHI 21A) is a form-, fit- and mostly Description of the circuit block diagram and the
function-compatible replacement to its predecessor, the functions of the driver
SKHI 22 (SKHI 21). The block diagram (fig.1) shows the inputs of the driver
The SKHI 22B is recommended for any new development. (primary side) on the left side and the outputs (secondary
It has two additional signal pins on the primary side with side) on the right.
which further functions may be utilized. The following functions are allocated to the primary
The SKHI 22A and SKHI 22B are available with standard side:
isolation (isolation testing voltage 2500 VAC, 2sec.) as Input-Schmitt-trigger, CMOS compatible, positive logic
well as with an increased isolation voltage (type "H4") (input high = IGBT on)
(isolation testing voltage 4000 VAC, 2sec.). The SKHI 21A
is only offered with standard isolation features. Interlock circuit and deadtime generation of the IGBT
Differences SKHI 22-22A (SKHI 21-21A) If one IGBT is turned on, the other IGBT of a halfbridge
cannot be switched. Additionally, a digitally adjustable
Compared to the old SKHI 22/21 the new driver
interlocking time is generated by the driver (see fig. 3),
SKHI 22A / 21A is absolutely compatible with regards to
which has to be longer than the turn-off delay time of the
pins and mostly with regards to functions. It may be
IGBT. This is to avoid that one IGBT is turned on before
equivalently used in existing PCBs.
the other one is not completely discharged. This
The following points have to be considered when protec-tion-function may be neutralized by switching the
exchanging the drivers: select input (pin6) (see fig. 3). fig. 3 documents possible
interlock-times. "High" value can be achieved with no
• Leave out the two resistors RTD for interlocking connection and connection to 5 V as well.
dead time adjustment at pin 11 and pin 9.
P6 ; P5 ; P9 ; interlock time
• The interlocking time of the driver stages in SELECT TDT1 TDT2 tTD /μs
halfbridge applications is adjusted to 3,25 µs. It may
open / 5V GND GND 1,3
be increased up to 4,25 µs by applying a 15 V (VS)
supply voltage at Pin 9 (TDT2) (wire bridge) open / 5V GND open / 5V 2,3
open / 5V open / 5V GND 3,3
• The error reset time is typically 9µs.
open / 5V open / 5V open / 5V 4,3
• The input resistance is 10 kΩ.
GND X X no interlock

Fig. 3 SKHI 22B - Selection of interlock-times:

As far as the SKHI 22A is concerned, the negative gate „High“-level can be achieved by no connection or
voltage required for turn-off of the IGBT is no longer -15V, connecting to 5 V
but -7V.
Short pulse suppression
General description
The integrated short pulse suppression avoids very short
The new driver generation SKHI 22A/B, SKHI 21A
switching pulses at the power semiconductor caused by
consists of a hybrid component which may directly be
high-frequency interference pulses at the driver input
mounted to the PCB.
signals. Switching pulses shorter than 500 ns are
All devices necessary for driving, voltage supply, error suppressed and not transmitted to the IGBT.
monitoring and potential separation are integrated in the
driver. In order to adapt the driver to the used power Power supply monitoring (VS)
module, only very few additional wiring may be necessary. A controlled 15 V-supply voltage is applied to the driver. If
it falls below 13 V, an error is monitored and the error
The forward voltage of the IGBT is detected by an
output signal switches to low level.
integrated short-circuit protection, which will turn off the
module when a certain threshold is exceeded.
1.The following descriptions apply to the use of the hybrid
In case of short-circuit or too low supply voltage the driver for IGBTs as well as for power MOSFETs. For the
integrated error memory is set and an error signal is reason of shortness, only IGBTs will be mentioned in the
generated. following. The designations "collector" and "emitter" will refer
to IGBTs, whereas for the MOSFETs "drain" and "source" are
to be read instead.

© by SEMIKRON 30-09-2008 Driver Electronic – PCB Drivers 6

Error monitoring and error memory IGBT is turned off. VCEstat is the steady-state value of VCEref
and is adjusted to the required maximum value for each
The error memory is set in case of under-voltage or
IGBT by an external resistor RCE to be connected between
short-circuit of the IGBTs. In case of short-circuit, an error
the terminals CCE (S6/S15) and E (S9/S12). It may not
signal is transmitted by the VCE-input via the pulse
exceed 10 V. The time constant for the delay of VCEref may
transformers to the error memory. The error memory will
be increased by an external capacitor CCE, which is
lock all switching pulses to the IGBTs and trigger the error
connected in parallel to RCE. It controls the time tmin which
output (P10) of the driver. The error output consists of an
passes after turn-on of the IGBT before the
open collector transistor, which directs the signal to earth
VCE-monitoring is activated. This makes possible any
in case of error. SEMIKRON recommends the user to
adaptation to the switching behavior of any of the IGBTs.
provide for a pull-up resistor directly connected to the error
After tmin has passed, the VCE-monitoring will be triggered
evaluation board and to adapt the error level to the desired
as soon as VCE > VCEref and will turn off the IGBT.
signal voltage this way. The open collector transistor may
be connected to max. 30 V / 15 mA. If several SKHI 22Bs
are used in one device, the error terminals may also be External components and possible adjust-
paralleled. ments of the hybrid driver
ATTENTION: Only the SKHI 22A / 21A is equipped with
Fig. 1 shows the required external components for
an internal pull-up resistor of 10 kΩ versus VS. The
adjustment and adaptation to the power module.
SKHI 22B does not contain an internal pull-up resistor.
VCE - monitoring adjustment
The error memory may only be reset, if no error is pending
and both cycle signal inputs are set to low for > 9 μs at the The external components RCE and CCE are applied for
same time. adjusting the steady-state threshold and the short-circuit
monitoring dynamic. RCE and CCE are connected in
Pulse transformer set parallel to the terminals CCE (S15/ S6) and E (S12/ S9) .
The transformer set consists of two pulse transformers 8

one is used bidirectional for turn-on and turn-off signals of 7

the IGBT and the error feedback between primary and 6

secondary side, the other one for the DC/DC-converter.
1200V (min)
The DC/DC-converter serves as potential-separation and
5
V CEstat / V

1200V (typ)
power supply for the two secondary sides of the driver. 4
1200V (max)
The isolation voltage for the "H4"-type is 4000 VAC and 3
1700V (min)
2500 VAC for all other types. 2
1700V (typ)

1700V (max)
The secondary side consists of two symmetrical 1

driver switches integrating the following components: 0

10 20 30 RCE / kOhm 40 50

Supply voltage
Fig. 4 VCEstat in dependence of RCE (Tamb = 25°C)
The voltage supply consists of a rectifier, a capacitor, a
voltage controller for - 7 V and + 15 V and a + 10 V
reference voltage.
Dimensioning of RCE and CCE can be done in three steps:
Gate driver
1. Calculate the maximum forward voltage from the
The output transistors of the power drivers are MOSFETs. datasheet of the used IGBT and determine VCEstat
The sources of the MOSFETs are separately connected to
external terminals in order to provide setting of the turn-on 2. Calculate approximate value of RCE according to
and turn-off speed by the external resistors RON and ROFF. equation (1) or (1.1) from VCEstat or determine RCE by
Do not connect the terminals S7 with S8 and S13 with using fig.4.
S14, respectively. The IGBT is turned on by the driver at +
15 V by RON and turned off at - 7 V by ROFF. RON and ROFF 3. Determine tmin and calculate CCE according to
may not chosen below 3 Ω. In order to ensure locking of equations (2) and (3).
the IGBT even when the driver supply voltage is turned off, Typical values are
a 22 kΩ-resistor versus the emitter output (E) has been
integrated at output GOFF. for 1200 V IGBT: VCEstat = 5 V; tmin = 1,45 μs,
VCE-monitoring RCE = 18 kΩ, CCE = 330 pF
The VCE-monitoring controls the collector-emitter voltage for 1700 V IGBT: VCEstat = 6 V; tmin = 3 μs,
VCE of the IGBT during its on-state. VCE is internally limited
to 10 V. If the reference voltage VCEref is exceeded, the RCE = 36 kΩ, CCE = 470 pF
IGBT will be switched off and an error is indicated. The
Adaptation to 1700 V IGBT
reference voltage VCEref may dynamically be adapted to
the IGBTs switching behaviour. Immediately after turn-on When using 1700 V IGBTs it is necessary to connect a
of the IGBT, a higher value is effective than in the steady 1 kΩ / 0,4 W adaptation resistor between the VCE-terminal
state. This value will, however, be reset, when the (S20/ S1) and the respective collector.

7 Driver Electronic – PCB Drivers 30-09-2008 © by SEMIKRON

Adaptation to error signal level SEMIKRON recommends to start-up operation using the
values recommended by SEMIKRON and to optimize the
An open collector transistor is used as error terminal, values gradually according to the IGBT switching
which, in case of error, leads the signal to earth. The signal behaviour and overvoltage peaks within the specific
has to be adapted to the evaluation circuit's voltage level circuitry.
by means of an externally connected pull-up resistor. The
maximum load applied to the transistor shall be 30 V / 15 Driver performance and application limits
mA. The drivers are designed for application with halfbridges
As for the SKHI 22A / 21A a 10 kΩ pull-up resistor versus and single modules with a maximum gate charge QGE <
VS (P13) has already been integrated in the driver. 4 μC (see fig. 6).
The charge necessary to switch the IGBT is mainly
IGBT switching speed adjustment
depending on the IGBT's chip size, the DC-link voltage
The IGBT switching speed may be adjusted by the and the gate voltage.
resistors RON and ROFF. By increasing RON the turn-on
This correlation is also shown in the corresponding
speed will decrease. The reverse peak current of the
module datasheet curves.
free-wheeling diode will diminish. SEMIKRON
recommends to adjust RON to a level that will keep the It should, however, be considered that the SKHI 22B is
turn-on delay time td(on) of the IGBT < 1 μs. turned on at + 15 V and turned off at - 7 V. Therefore, the
gate voltage will change by 22 V during every switching
By increasing ROFF the turn-off speed of the IGBT will procedure.
decrease. The inductive peak overvoltage during turn-off
will diminish. Unfortunately, most datasheets do not indicate negative
gate voltages. In order to determine the required charge,
The minimum gate resistor value for ROFF and RON is 3 Ω. the upper leg of the charge curve may be prolonged to
Typical values for RON and ROFF recommended by + 22 V for determination of approximate charge per
SEMIKRON are given in fig. 5 switch.
RGon RGoff CCE RCE RVCE The medium output current of the driver is determined by
SK-IGBT-Modul
Ω Ω pF kΩ kΩ the switching frequency and the gate charge. For the SKHI
SKM 50GB123D 22 22 330 18 0 22B the maximum medium output current is IoutAVmax < ±
40 mA.
SKM 75GB123D 22 22 330 18 0
SKM 100GB123D 15 15 330 18 0 The maximum switching frequency fMAX may be calculated
with the following formula, the maximum value however
SKM 145GB123D 12 12 330 18 0
being 50 kHz due to switching reasons:
SKM 150GB123D 12 12 330 18 0 4
4 ⋅ 10
SKM 200GB123D 10 10 330 18 0 f MAX ( kHz ) = -----------------------
SKM 300GB123D 8,2 8,2 330 18 0 Q GE ( nC )
SKM 400GA123D 6,8 6,8 330 18 0
Fig. 6 shows the maximum rating for the output charge per
pulse for different gate resistors.
SKM 75GB173D 15 15 470 36 1
SKM 100GB173D 12 12 470 36 1 SKHI 22 A/B maximum rating for output charge per
SKM 150GB173D 10 10 470 36 1 pulse

SKM 200GB173D 8,2 8,2 470 36 1 4,50

4,00

Fig. 5 Typical values for external components 3,50

3,00
Rg=24 OHM; 3,86µC

Rg=18 OHM; 3,52µC

Q / µC

2,50
Interlocking time adjustment 2,00
Rg=12 OHM; 3,07µC

1,50 Rg=6 OHM, 2,50µC

Fig. 3 shows the possible interlocking times between 1,00 Rg=3 OHM, 2,18µC

output1 and output2. Interlocking times are adjusted by 0,50

0,00
connecting the terminals TDT1 (P5), TDT2 (P9) and 0 10 20 30 40 50 60

SELECT (P6) either to earth/ GND (P7 and P14) f / kHz

according to the required function or by leaving them

open. Fig. 6 Maximum rating for output charge per pulse

A typical interlocking time value is 3,25 μs (P9 = GND; P5 Further application notes
and P6 open). For SKHI 22A / 21A the terminals TDT1 The CMOS-inputs of the hybrid driver are extremely
(P5) and SELECT (P6) are not existing. The interlocking sensitive to over-voltage. Voltages higher than VS
time has been fixed to 3,25 μs and may only be increased + 0,3 V or below – 0,3 V may destroy these inputs.
to 4,25 μs by connecting TDT2 (P9) to VS (P13). Therefore, control signal over-voltages exceeding the
above values have to be avoided.
ATTENTION: If the terminals TDT1 (P5), TDT2 (P9) and
SELECT (P6) are not connected, eventually connected Please provide for static discharge protection during
track on PC-board may not be longer than 20 mm in order handling. As long as the hybrid driver is not completely
to avoid interferences. assembled, the input terminals have to be short-circuited.

© by SEMIKRON 30-09-2008 Driver Electronic – PCB Drivers 8

Persons working with CMOS-devices have to wear a If a PCB is directly plugged to IGBT modules, the PCB has
grounded bracelet. Any synthetic floor coverings must not to be fixed to the heat sink by thread bolts.
be statically chargeable. Even during transportation the
input terminals have to be short-circuited using, for The temperature of the solder must not exceed 265°C,
example, conductive rubber. Worktables have to be and solder time must not exceed 4 seconds. The ambient
grounded. The same safety requirements apply to temperature must not exceed the specified maximum
MOSFET- and IGBT-modules! storage temperature of the driver.
The connecting leads between hybrid driver and the The driver is not suited for hot air reflow or infrared reflow
power module should be as short as possible, the driver soldering processes.
leads should be twisted.
Any parasitic inductances within the DC-link have to be Storage hints
minimized. Over-voltages may be absorbed by C- or
RCD-snubbers between the main terminals for PLUS and - Store driver only in original packaging.
MINUS of the power module. - Avoid contamination of driver's surface during storage,
When first operating a newly developed circuit, handling and processing.
SEMIKRON recommends to apply low collector voltage - Please use the driver within one year after driver
and load current in the beginning and to increase these manufacturing date. The manufacturing date is marked on
values gradually, observing the turn-off behaviour of the the driver. Usage of the driver beyond this shelf life could
free-wheeling diode and the turn-off voltage spikes compromise product long term reliability.
generated accross the IGBT. An oscillographic control will - Further storage conditions are indicated in the data
be necessary. In addition to that the case temperature of sheet
the module has to be monitored. When the circuit works
correctly under rated operation conditions, short-circuit Environmental conditions
testing may be done, starting again with low collector
voltage.
The driver is type tested under the environmental
It is important to feed any errors back to the control circuit conditions below.
and to switch off the device immediately in such events.
Repeated turn-on of the IGBT into a short circuit with a Thermal cycling test:
high frequency may destroy the device.
Mechanical fixing on PCB: - 100 cycle -40°C … +85°C
In applications with mechanical vibrations do not use a
ty-rap for fixing the driver, but - after soldering and testing Vibration test according DIN IEC 68-2-6:
- apply special glue. Recommended types: CIBA GEIGY
XP 5090 + 5091; PACTAN 5011; WACKER A33 (ivory) or - Sinusoidal sweep: 10 Hz … 100 Hz
N199 (transparent), applied around the case edge (forms
-1 Octave / min.
a concave mould). The housing may not be pressed on the
PCB; do not twist the PCB with the driver soldered on, -Acceleration: 1,5 g
otherwise the internal ceramics may crack. The driver is -Axes: 3 (x, y, z)
not suitable for big PCBs. -26 sweeps per axis
-Driver soldered on board SKPC 2006 (L x B x H = 97,0
Proven, within the scope of the product qualification, was x 67,5 x 1,5mm)
the use of the driver with the printed circuit board
-Driver stuck with glue on printed circuit board (see
SKPC 2006 ( L x B x H = 97,0 x 67,5 x 1,5 mm). During the
test, the driver was stuck with glue on the printed circuit application notes)
board. Based on this information the technical conclusion
arises, that in an application with big printed circuit boards,
this board must be supported and reinforced in the area of
the driver. Shock test according DIN IEC 68-2-27:

- Half-sinusoidal pulse
-Peak acceleration: 5 g
-Shock width: 18ms
-3 shocks in each direction (±x, ±y und ±z)
-18 shocks in total
-Driver soldered on board SKPC 2006 (L x B x H = 97,0
x 67,5 x 1,5mm)
-Driver stuck with glue on printed circuit board (see
application notes)

9 Driver Electronic – PCB Drivers 30-09-2008 © by SEMIKRON

Temperature humidity according IEC 60068-1 (climate):

- 40/085/56 (40°C, 85% RH, 56h)

- No condensation, no dripping water, non- corrosive
Climate class 3K3

All electrical and mechanical parameters should be

validated by user´s technical experts for each application.
For further details please contact SEMIKRON.

This technical information specifies devices but promises no characteristics. No warranty or guarantee expressed or implied is made
regarding delivery, performance or suitability.

© by SEMIKRON 30-09-2008 Driver Electronic – PCB Drivers 10