A0b36apo Prednaska03 Memory en

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Computer Architectures

Memory
Pavel Pa, Michal tepanovsk, Miroslav norek
Main source of inspiration: Patterson

Czech Technical University in Prague, Faculty of Electrical Engineering


English version partially supported by:
European Social Fund Prague & EU: We invests in your future.
AE0B36APO Computer Architectures Ver.1.10 1
Suggested literature for the course

AE0B36APO Computer Architectures 2


Lecture motivation

Quick Quiz 1.: Is the result of both code fragments a same?


Quick Quiz 2.: Which of the code fragments is processed faster and why?

A: B:
int matrix[M][N]; int matrix[M][N];
int i, j, sum = 0; int i, j, sum = 0;

for(i=0; i<M; i++) for(j=0; j<N; j++)
for(j=0; j<N; j++) for(i=0; i<M; i++)
sum += matrix[i][j]; sum += matrix[i][j];

Is there a rule how to iterate over matrix element efficiently?


AE0B36APO Computer Architectures 3
Lecture outline
Overview of memory related terms and definitions
Memory hierarchy
Management and mapping of data between levels
Cache memory
Basic concept
More realistic approach
Multi-level cache memory
Virtual memory
Memory hierarchy and related problems
Main memory implementation memory chips
Secondary(+more) storage (mass storage)

AE0B36APO Computer Architectures 4


John von Neumann, Hungarian physicist

Memory von Neumann's computer architecture


Process Princeton Institute for Advanced Studies
or

ctrl
ALU
Input Output
28. 12. 1903 -
8. 2. 1957
5 functional units control unit, arithmetic logic unit, memory, input (devices),
output (devices)
An computer architecture should be independent of solved problems. It has to

provide mechanism to load program into memory. The program controls what the
computer does with data, which problem it solves.
Programs and results/data are stored in the same memory. That memory consists

of a cells of same size and these cells are sequentially numbered (address).
The instruction which should be executed next, is stored in the cell exactly after

the cell where preceding instruction is stored (exceptions branching etc. ).


The instruction set consists of arithmetics, logic, data movement, jump/branch

and special/control instructions.


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PC Computer Motherboard

AE0B36APO Computer Architectures 6


http://www.pcplanetsystems.com/abc/product_details.php?
Computer architecture (desktop x86 PC)
example
generic

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From UMA to NUMA development (even in PC segment)
Non-Uniform
Memory
CPU 1 CPU 2 CPU 1 CPU 2 Architecture
RAM RAM RAM

RAM MC MC
MC MC
Northbridge MC Northbridge
CPU 1 CPU 2
RAM
SATA SATA SATA
USB Southbridge USB Southbridge USB Southbridge
PCI-E PCI-E PCI-E

MC - Memory controller contains circuitry responsible for SDRAM read and


writes. It also takes care of refreshing each memory cell every 64 ms.

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Intel Core 2 generation

Northbridge became Graphics and Memory Controller Hub (GMCH)


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Intel i3/5/7 generation

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Memory address space
It is an array of addressable units (locations) where each unit can hold a data value.
Number/range of addresses same as addressable units/words are limited in size.
FFFFFH
memory location
holds value contents
data path,
Memory usual width
Address 32b/4B
width a bits
Processor

Control ALU
Unit Unit
a 2a

8 256 distinct locations


Input Output
16 64K (K=1024)

32 4G (4096M, M=K2)
000000H

The most common size of addressable


memory unit is 1B (8 bits)

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Memory subsystem terms and definitions
Memory address fixed-length sequences of bits or index
Data value the visible content of a memory location
Memory location can hold even more control/bookkeeping
information
validity flag, parity and ECC bits etc.


Basic memory parameters:
Access time delay or latency between a request and the access
being completed or the requested data returned
Memory latency time between request and data being available
(does not include time required for refresh and deactivation)
Throughput/bandwidth main performance indicator. Rate of
transferred data units per time.
Maximal, average and other latency parameters

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Memory types and maintenance
Types: RWM (RAM), ROM, FLASH
Implementation: SRAM, DRAM

Data retention time and conditions (volatile/nonvolatile)


Dynamic memories (DRAM, SDRAM) require specific
care
Memory refresh state of each memory cell has to be
internally read, amplified and fed back to the cell once
every refresh period (usually about 60 ms), even in idle
state. Each refresh cycle processes one row of cells.
Precharge necessary phase of access cycle to restore
cell state after its partial discharge by read
Both contribute to maximal and average access time.

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Memory and CPU speed Moore's law
CPU performance 25% 52% 20%
100,000.00 per year per year per year

10,000.00

Processor-Memory
Performance

1,000.00 Performance Gap


CPU Growing
100.00
Throughput of memory
only +7% per year
10.00
Memory

1.00
1980 1985 1990 1995 2000 2005 2010
Source: Hennesy, Patterson
Year CaaQA 4th ed. 2006

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Typical SRAM and DRAM Memory Parameters

Memory Number of 1 bit area Data latency


kind transistors on silicon availability
SRAM about 6 < 0,1 m2 instantenou < 1ns
s 5ns
DRAM 1 < 0,001 m2 needs >ten ns
refresh

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Bubble sort algorithm example from seminaries
int array[5]={5,3,4,1,2};
int main()
What we can
{ consider and
int N = 5,i,j,tmp;
for(i=0; i<N; i++)
expect from our
for(j=0; j<N-1-i; j++) programs?
if(array[j+1]<array[j])
{
tmp = array[j+1];
array[j+1] = array[j];
array[j] = tmp; Think about
}
return 0; some typical
} data access
patterns and
execution flow.

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Memory hierarchy principle of locality
Programs access a small proportion of their address
space at any time
Temporal locality
Items accessed recently are likely to be accessed again
soon
e.g., instructions in a loop, induction variables
Spatial locality
Items near those accessed recently are likely to be
accessed soon
E.g., sequential instruction access, array data

Source: Hennesy, Patterson

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Memory hierarchy introduced based on locality
The solution to resolve capacity and speed requirements is
to build address space (data storage in general) as
hierarchy of different technologies.
Store input/output data, program code and its runtime data
on large and cheaper secondary storage (hard disk)
Copy recently accessed (and nearby) items from disk to
smaller DRAM based main memory (usually under
operating system control)
Copy more recently accessed (and nearby) items from
DRAM to smaller SRAM memory (cache) attached to CPU
(hidden memory, transactions under HW control), optionally,
tightly coupled memory under program's control
Move currently processed variables to CPU registers (under
machine program/compiler control)
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Memory hierarchy speed, capacity, price

small size processor registers


small capacity very fast, very expensive
power on
small size processor cache
small capacity immediate term very fast, very expensive

medium size power on random access memory


medium capacity very short term fast, affordable
small size power off flash/USB memory
large capacity short term slower, cheap

power off hard drive


large size slow, very cheap
very large mid term
capacity power off tape backup
long term very slow, affordable
Source: Wikipedia.org
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Memory/storage in computer system

Tertiary storage Primary storage

Central Processing Unit


Main memory
Logic registers
Removable memory random access
unit
medium bus 256 MB
ALU/CU Cache
16 GB

Robotic
access
system
Input/output Secondary storage Off-line storage
channels

Removable Mass storage Removable media


Removable
media CD-RW, DVD-RW
drive
medium Hard disk
120 GB Removable
many TB medium

Source: Wikipedia.org
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Contemporary price/size examples

CPU

Control unit Secondary


Main memory
Level2 memory
Registers cache (DRAM) (disc)
Data L1
cache (SRAM)
path

Type/ L1 32kB Sync DDR3 HDD 3TB


Size SRAM 16 GB
Price 10 k/kB 300 123 1 k/GB
k/MB k/GB
Speed/ 0.2...2ns 0.5...8 15 100 MB/sec
throughput ns/word GB/sec
Some data can be available in more copies (consider levels and/or SMP ).
Mechanisms to keep consistency required if data are modified.
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Mechanism to lookup demanded information?
According to the address and other management
information (data validity flags etc).
The lookup starts at the most closely located memory
level (local CPU L1 cache).
Requirements:
Memory consistency/coherency.
Used means:
Memory management unit to translate virtual address
to physical and signal missing data on given level.
Mechanisms to free (swap) memory locations and
migrate data between hierarchy levels
Hit (data located in upper level fast), miss (copy from
lower level required)
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Processor-memory performance gap solution cache

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Performance gap between CPU and main memory
Solution cache memory
Cache component that (transparently) stores data so
that future requests for that data can be served faster
Transparent cache hidden memory

Placed between two subsystems with different data


throughput. It speeds-up access to (recently) used data.
This is achieved by maintaining copy of data on memory
device faster than the original storage

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Initial idea fully associative cache
Tag the key to locate data (value) in the cache. The original
address in the main memory for fully associative case. Size of this
field is given by number of bits in an address i.e. 32, 48 or 64
Data the stored information, basic unit word is usually 4 bytes
Flags additional bits to keep service information.

Address

comparator Tag Data Flags

Cache line of fully associative cache


comparator
Tag Data Flags

comparator

Hit Data

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Definitions for cache memory
Cache line or cache block basic unit
copied between levels
May be multiple words
Usual cache line size from 8B up to 1KB
If accessed data is present in upper
level
Hit: access satisfied by upper level
Hit rate: hits/accesses
If accessed data is absent
Miss: block copied from lower level
Time taken: miss penalty
Miss rate: misses/accesses
= 1 hit rate
Then the accessed data is supplied from
upper level

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Fully associative cache implementation
The Tag field width is equivalent to address width (not
counting address bits equivalent to byte in word or line)
Each cache line requires its own multiplexer input and same
number of one-bit comparators as is size of the tag field.
Cache line count determines capacity of the cache
Cache requires complex replacement policy logic to find out
which of all lines is the best candidate for new request.

Such cache implementation is very expensive to implement


in HW (ratio of gate count/capacity is high) and slow
That is why other cache types are used in practice
Direct mapped
n-way associative with limited associativity

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CPU writes to main memory
There is cache in the way
Data consistency requirement for data coherency for same
address accessed through different paths
Write through data are written to the cache and write
buffer/queue simultaneously
Write back data are written to the cache only and dirty bit is
set. Write to the other level is delayed until cache line
replacement time or to cache flush event
Dirty bit an additional flag for cache line. It Indicates that
cached value is updated and does not correspond with the main
memory.

V Other bits, i.e. D Tag Data


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The process to resolve cache miss
Data has to be filled from main memory, but quite often all available
cache locations which address can be mapped to are allocated

Cache content replacement policy (offending cache line is invalidated


either immediately or after data are placed in the write queue/buffer)
Random random cache line is evicted
LRU (Least Recently Used) additional information is required to find
cache line that has not been used for the longest time
LFU (Least Frequently Used) additional information is required to find
cache line that is used least frequently requires some kind of forgetting
ARC (Adaptive Replacement Cache) combination of LRU and LFU
concepts
Write-back content of the modified (dirty) cache line is moved to the
write queue

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CPU including cache Harvard cache architecture
Separated instruction and data cache
The concept of Von Neumann's CPU with Harvard cache is illustrated on
a MIPS CPU family member, i.e. real CPU which is superset of the design
introduced during lectures 2 and 4.

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Example to illustrate base cache types
The cache capacity 8 blocks. Where can be
block/address 12 placed for
Fully associative
Direct mapped
N-way (set) associative i.e. N=2 (2-way cache)
Fully associative: Direct mapped: 2-way associative:
Address 12 can be Address 12 placed only Address 12 is placed
placed anywhere to block 4 (12 mod 8) into set 0 (12 mod 4)

Block 0 1 2 3 4 5 6 7 Block 01234567 Block 0 1 2 3 4 5 6 7


number number number

Only one set 0 1 2 3 4 5 6 7 Set Set Set Set


Set 0 1 2 3

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Direct mapped cache

direct mapped cache: one block in each set

Capacity C
Number of sets S
Block size b
Number of blocks B
Degree of associativity N

C = 8 (8 words),
S = B = 8,
b = 1 (one word in the block),
N=1
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Direct mapped cache

Set = (Address/(4b)) mod S


Set = (Address/4) mod 8

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Real cache organization
Tag is index of the block corresponding to the cache set
size in the main memory (that is address divided by block
length and number or the cache lines in the set)
Data are organized in cache line blocks, multiple words.
Valid bit marks line contents (or sometimes individual
words) as valid.
Dirty bit corresponding cache line (word) was modified
and write back will be required later
Possible cache line states (for coherence protocols)
Invalid, Owned, Shared, Modified, Exclusive out of the
scope for this lecture
V Flags, i.e. dirty bit D Tag Data

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Direct mapped cache implementation

Quick Quiz: Is bigger block


size (always) advantageous?

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2-way set associative cache

Capacity C
Number of sets S
Block size b
Number of blocks B
Degree of associativity N

C = 8 (8 words),
S = 4,
b = 1 (one word in the block),
B=8
N=2 What is main advantage of higher associativity?
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4-way set associative cache

AE0B36APO Computer Architectures 37


Fully associative cache as special N-way case

From the above, a fully associative cache can be


considered as N-way with only one set. N=B=C/(b4)
The same way we can define direct mapped cache as a special case
where the number of ways is one.

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Important cache access statistical parameters
Hit Rate number of memory accesses satisfied by
given level of cache divided by number of all memory
accesses
Miss Rate same, but for requests resulting in
access to slower memory = 1 Hit Rate
Miss Penalty time required to transfer block (data)
from lower/slower memory level
Average Memory Access Time (AMAT)
AMAT = Hit Time + Miss Rate Miss Penalty

Miss Penalty for multi-level cache can be computed by


recursive application of AMAT formula

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Comparison of different cache sizes and organizations

Remember: 1. miss rate is not cache parameter/feature!


2. miss rate is not parameter/feature of the program!
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What can be gained from spatial locality?

Miss rate of consecutive accesses can be reduced by increasing block size.


On the other hand, increased block size for same cache capacity results in
smaller number of sets and higher probability of conflicts (set number aliases)
and then to increase of miss rate.

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Multi-level cache organization

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Multiple cache levels development directions
Primary/L1 cache tightly coupled to the CPU
Fast but small. Main objective: minimal Hit Time/latency
Usually separated caches for instruction and for data
Size usually selected so that cache lines can be virtually tagged without
aliasing. (set/way size is smaller than page size)
L2 cache resolves cache misses of the primary cache
Much bigger and slower but still faster than main memory. Main goal: low
Miss Rate
L2 cache misses are resolved by main memory
Trend to introduce L3 caches, inclusive versus exclusive cache
Usual for L1 Usual for L2
Block count 250-2000 15 000-250 000
KB 16-64 2 000-3 000
Block size in bytes 16-64 64-128
Miss penalty (cycles) 10-25 100-1 000
Miss rates 2-5% 0,1-2%
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Intel Nehalem example of Harvard three-level cache

IMC: integrated memory


controller with 3 DDR3 memory
channels,
QPI: Quick-Path Interconnect
ports

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Intel Nehalem memory subsystem structure

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Notes for Intel Nehalem example

Block size: 64B


CPU reads whole cache line/block from
main memory and each is 64B aligned
(6 LS bits are zeros), partial line fills allowed
L1 Harvard. Shared by two (H)threads
instruction 4-way 32kB, data 8-way 32kB
L2 unified, 8-way, non-inclusive, WB
L3 unified, 16-way, inclusive (each line stored in L1 or L2 has copy in L3),
WB
Store Buffers temporal data store for each write to eliminate wait for write to
the cache or main memory. Ensure that final stores are in original order and
solve transaction rollback or forced store for:
- exceptions, interrupts, serialization/barrier instructions, lock prefix,..
TLBs (Translation Lookaside Buffers) are separated for the first level
Data L1 32kB/8-ways results in 4kB range (same as page) which allows to
use 12 LSBs of virtual address to select L1 set in parallel with MMU/TLB
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Virtual memory

AE0B36APO Computer Architectures 47


Virtual memory
Virtual memory (VM) a separate address space is provided
to each process, it is (can be) organized independently on the
physical memory ranges and can be even bigger than the
whole physical memory
Programs/instructions running on the CPU operate with data
only through virtual addresses
Translation from virtual address (VA) to physical address (PA)
is implemented in HW (MMU, TLB).
Common OSes implement virtual memory through paging
which extends concept even to swapping memory content onto
secondary storage
PA
VA virtual physical
Program works address Physical
address
in its virtual mapping memory
address space (+caches)

AE0B36APO Computer Architectures 48


Virtual memory paging
Process virtual memory content is divided into aligned pages
of same size (power of 2, usually 4 or 8 kB)
Physical memory consists of page frames of the same size
Note: huge pages option on modern OS and HW 2n pages

Virtual
address
space
process-A Page
frame

Virtual
address Disk
space
process-B
Page size = frame size
Physical memory
AE0B36APO Computer Architectures 49
Virtual/physical address and data

Virtual address Physical address

A0-A31 Virtual Physical A0-A31


Address
CPU translation Memory
D0-D31 MMU D0-D31

Data

AE0B36APO Computer Architectures 50


Address translation

Page Table
Root pointer/page directory base register (x86 CR3=PDBR)
Page table directory PTD
Page table entries PTE
Basic mapping unit is a page (page frame)
Page is basic unit of data transfers between main
memory and secondary storage
Mapping is implemented as look-up table in most cases
Address translation is realized by Memory Management
Unit (MMU)
Example follows on the next slide:

AE0B36APO Computer Architectures 51


Single-level page table (MMU)

PDBR
Page directory is represented as data structure stored in main memory. OS task is
to allocate physically continuous block of memory (for each process/memory
context) and assign its start address to special CPU/MMU register.
PDBR - page directory base register for x86 register CR3 holds physical
address of page directory start, alternate names PTBR - page table base register
the same thing, page table root pointer URP, SRP on m68k

AE0B36APO Computer Architectures 52


But consider memory consumed by page table
Typical page size is 4 kB = 2^12
12 bits (offset) are enough to address data in page (frame).
There are 20 bits left for address translation on 32-bit
address/architecture.
The fastest map/table look-up is indexing use array
structure
The page directory is an array of 2^20 entries (PTE). That
is big overhead for processes that do not use whole virtual
address range. There are another problems as well
(physical space allocation fragmentation when large
compact table is used for each process, etc.)
Solution: multi-level page table lower levels populated
only for used address ranges
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Multi-levels page table

AE0B36APO Computer Architectures 54


What is in page table entries?
VA virtual
address Page # Offset

Page Table Page table


Base Register
PTBR
V Access rights Frame#
Index into +
pagetable

PA physical address

Page valid bit if = 0,


page not in the memory
results in page fault

Page table placed in physical memory

AE0B36APO Computer Architectures 55


Remarks

Each process has its own page table

Process specific value of CPU PTBRT register is loaded by


OS when given process is scheduled to run

This ensures memory separation and protection between


processes

Page table entry format



V Validity Bit. V=0 page is not valid (is invalid)

AR Access Rights (Read Only, Read/Write, Executable,
etc.),

Frame# - page frame number (location in physical memory)

Other management information, Modified/Dirty, (more bits
discussed later, permission, system, user etc.).
V AR Frame#
AE0B36APO Computer Architectures 56
Virtual memory Hardware and software interaction

missing page, i.e. PTE.V = 0

Page fault
Processor procession by OS

Z
a Address Main Secondary
translation memory store
a'
Virtual address Physical address
OS process
data transfer

AE0B36APO Computer Architectures 57


How to resolve page-fault
Check first that fault address belongs to process mapped areas
If free physical frame is available
The missing data are found in the backing store (usually swap or file
on disk)
Page content is read (usually through DMA, Direct Memory Access,
part of some future lesson) to the allocated free frame. If read
blocks, the OS scheduler switches to another process.
End of the DMA transfer raises interrupt, OS updates page table of
original process.
Scheduler switches to (resumes) original process.
If no free frame is available, some frame has to be released
The LRU algorithm finds (unpinned not locked in physical memory
by OS) frame, which can be released.
If the Dirty bit is set, frame content is written to the backing store
(disc). If store is a swap store to the PTE or other place block nr.
Then continue with gained free physical frame.
AE0B36APO Computer Architectures 58
Multi-level page table translation overhead

Translation would take long time, even if entries for all levels were
present in cache. (One access per level, they cannot be done in
parallel.)
The solution is to cache found/computed physical addresses
Such cache is labeled as Translation Look-Aside Buffer
Even multi-level translation caching are in use today
AE0B36APO Computer Architectures 59
Fast MMU/address translation using TLB
Translation-Lookaside Buffer, or may it be, more descriptive name
Translation-Cache

Cache of frame numbers where key is page virtual addresses

AE0B36APO Computer Architectures 60


Typical sizes of today I/D and TLB caches comparison

Typical paged memory Typical TLB


parameters

Size in blocks 16 000-250 000 40-1024


Size 500-1 000 MB 0,25-16 KB
Block sizes in B 4 000-64 000 4-32
Miss penalty 10 000 000 10-1 000
(clock cycles) 100 000 000

Miss rates 0,00001-0,0001% 0,01-2


Backing store Pages on the disk Page table in the
main memory
Fast access location Main memory frames TLB

AE0B36APO Computer Architectures 61


Hierarchical memory caveats

AE0B36APO Computer Architectures 62


Some problems to be aware of
Memory coherence definition on next slide
Single processor (single core) systems
Solution: D-bit and Write-back based data transactions
Even in this case, consistency with DMA requited (SW or
HW)
Multiprocessing (symmetric) SMP with common and
shared memory more complicated. Solutions:
Common memory bus: Snooping, MESI, MOESI protocol
Broadcast
Directories
More about these advanced topics in A4M36PAP

AE0B36APO Computer Architectures 63


Coherency definition
Memory coherence is an issue that affects the design of computer
systems in which two or more processors, cores or bus master
controllers share a common area of memory.
Intuitive definition: The memory subsystem is coherent if the value
returned by each read operation is always the same as the value
written by the most recent write operation to the same address.
More formal: P set of CPU's. xmX locations. pi,pkP: pipk.
Memory system is coherent if
1. pi read after pi write value a to xm returns a if there is no pi or pk
write between these read and write operations
2. if pi reads xm after pk write b to xm and there is no other pi or pk write
to xm then pi reads b if operations are separated by enough time (in
other case previous value of xm can be read) or architecture
specified operations are inserted after write and before read.
3. writes by multiple CPU's to the given location are serialized such
than no CPU reads older value when it already read recent one
AE0B36APO Computer Architectures 64
Comparison of virtual memory and cache memory

Virtual memory Cache memory


Page Block/cache line
Page Fault Read/Write Miss
Page size: 512 B 8 KB Block size: 8 128 B
Fully associative DM, N-way set associative
Victim selection: LRU LRU/Random
Write Back Write Thru/Write Back
Remarks.: TLB for address translation can be fully
associative, but for bigger sizes is 4-way.
Do you understand the terms?
What does victim represent?
Important: adjectives cache and virtual mean different things.
AE0B36APO Computer Architectures 65
Inclusive versus exclusive cache/data backing store
Mapping of contents of the main memory to the cache
memory is inclusive, i.e. main memory location cannot
be reused for other data when corresponding or updated
contents is held in the cache
If there are more cache levels it can be waste of the
space to keep stale/old data in the previous cache level.
Snoop cycle is required anyway. The exclusive
mechanism is sometimes used in such situation.
Inclusive mapping is the rule for secondary storage files
mapped into main memory.
But for swapping of physical contents to swap device/file
exclusive or mixed approach is quite common.

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Memory realization memory chips

AE0B36APO Computer Architectures 67


Flip-flop circuits reminder from previous courses

RS

D latch, level-controlled flip-flop D flip-flop, edge-controlled flip-flop

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Usual SRAM chip and SRAM cell
Usual SRAM chip SRAM memory cell
CMOS technology

Bigger memory size?

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Detail of static and dynamic memory bit cell

Single transistor cell of dynamic


memory

6 transistor static memory cell (single bit)

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Internal architecture of the DRAM memory chip

This 4M 1 DRAM is internally realized as an 2048x2048 array of 1b


memory cells

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History of DRAM chips development
Year Capacity Price[$]/GB Access time [ns]
1980 64 Kb 1 500 000 250
1983 256 Kb 500 000 185
1985 1 Mb 200 000 135
1989 4 Mb 50 000 110
1992 16 Mb 15 000 90
1996 64 Mb 10 000 60
1998 128 Mb 4 000 60
2000 256 Mb 1 000 55
2004 512 Mb 250 50
2007 1 Gb 50 40

AE0B36APO Computer Architectures 72


Old school DRAM asynchronous access

The address is transferred in two phases reduces
number of chip module pins and is natural for internal
DRAM organization

This method is preserved even for today chips

RAS Row Address Strobe,


CAS Column Address Strobe

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Phases of DRAM memory read

AE0B36APO Computer Architectures 74


EDO-RAM about 1995
Output register holds data during overlap of next read
CAS phase with previous access data transfer
this overlap (pipelining) increases throughput

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SDRAM end of 90-ties synchronous DRAM
SDRAM chip is equipped by counter that can be used to
define continuous block length (burst) which is read together

AE0B36APO Computer Architectures 76


SDRAM the most widely used main memory technology
SDRAM clock frequency up to 100 MHz, 2.5V.
DDR SDRAM data transfer at both CLK edges, 2.5V.
DDR2 SDRAM lower power consumption 1.8V,
frequency up to 400 MHz.
DDR3 SDRAM even lower power consumption at 1.5V,
frequency up to 800 MHz.
DDR4 SDRAM
There are also other dynamic memory types, I.e.
RAMBUS, that use entirely different concept
All these innovations are focused mainly on throughput,
not on the random access latency.

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Notes for todays SDRAMs and slides
Use of the banked architecture that enables throughput to
be increased by hiding latency of the opening and closing
rows. These operations can proceed in parallel on
different banks (sequential and interleaved banks
mapping). The change result in a minimal pin count
increase that is critical for price and density.
FIXME: More information about DDR2/3 should be added

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Other memory technologies secondary storage

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Flash
Combines properties of E2PROM, DRAM, ROM
Data are stored in transistor (floating gates) array (cells)
Each block can be programmed separately
But be aware of large erase segments
Nor type RAM access
NAND block addressing and access
Nonvolatile computer memory
Endures about 100 000 erase-write cycles
Read access time (50 - 110 ns)
Writes are slow, erase even slower
Data retention is 10 or more years
Uses:

memory cards

USB flash disk

memory chips
SSD disk
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Flash memory cell
Modified MOSFET transistor with electrically isolated
floating gate

Memory cell operations:


Programming
F-N tunneling
Hot-carrier injection
Erase
Read

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Programming Fowler-Nordheim's tunneling
The Ucgvoltage is applied to the control gate
This voltage creates an electric field that creates a
potential barrier
This barrier simplifies the way for electrons in the
substrate to the floating gate
Alternative to programing by Fowler-Nordheim's tunneling
is Drain-side tunneling

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Hot-carrier injection programming

There are two methods of Hot-carrier injection


a) hot-electron injection (for N type MOSFET placed on P-
substrate) used in practice for higher speed
b) hot-hole injection (for P type on N-substrate)
Hot-electron injection :
1)The Ucg - Ud voltage creates an
electric field in the semiconductor
2)This field accelerates electrons from
source electrode to drain electrode
3)The do not land to the drain
electrode because of they have
enough kinetic energy to cross
isolation layer to the floating gate
with higher potential
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Flash cell erase
Erase can be realized by Fowler-Nordheim's tunneling as
well
Electrons are expelled from floating point gate by
opposite polarity of Ucg than polarity used for
programming

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Flash cell read operation
The current flowing through transistor depends on floating
gate charge value (in combination with word selector
Ucg).
The current on common rail is compared to same
threshold(s) and converted to digital bit(s) value

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Optic storage CD-ROM detail

pit land
track

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How to record 0 and 1?

Encoded
data

Record on
media (one
track)


Ones are encoded by signal change!

Zeros as no change. Bit stuffing etc.

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Physical principle of magnetic media record

Recording head Disk plate

Random ordered Important: the data are


magnetic carried by signal changes
domains of
(reservation)!
magnetic media
layer

Magnetic domains are


ordered by current flowing
through coil on
recording/write head Organized magnetic domains cause
changes of field under read head
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Quick Quiz
Are associative memory and cache memory
synonymous?

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Literature to read

Read:

What Every Programmer Should Know About Memory by Ulrich


Drepper, Red Hat, Inc.
http://www.akkadia.org/drepper/cpumemory.pdf

Chapter 5 (Large and Fast: Exploiting memory hierarchy) from


Hennesy, Patterson CaaQA
For brave ones

Memory Ordering in Modern Microprocessors by Paul


McKenney
http://www.rdrop.com/users/paulmck/scalability/paper/ordering.2
007.09.19a.pdf

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