MITSUBISHI HVIGBT MODULES

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HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE

CM400DY-66H

IC ................................................................... 400A
VCES ....................................................... 3300V
Insulated Type
2-elements in a pack

APPLICATION
Inverters, Converters, DC choppers, Induction heating, DC to DC converters.

OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm

130
114
4 - M8 NUTS
570.25 570.25
20

C2 E2 C1 E1
E1 C2 C2

G2 G1
1240.25
140
40

E2 E1

CM C1 E2

CIRCUIT DIAGRAM
E1
E2(C1) G2
G1 C2

7.2 6 - 7 MOUNTING HOLES

5 - M4 NUTS
36.3 24.5
48.8 53.6

61.5 15
18 5.7 39.5
15
38

LABEL
30
28
5

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Feb.1999
 MITSUBISHI HVIGBT MODULES
ARY
LIMIN
.
ation change.
ecific
PRE e: Th
Notice parame
tr
o t a fi nal sp subject to
is is nic limits a
re CM400DY-66H
Som
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE

MAXIMUM RATINGS (Tj = 25 C)

Symbol Parameter Conditions Ratings Unit
VCES Collector-emitter voltage G-E Short 3300 V
VGES Gate-emitter voltage C-E Short 20 V
IC TC = 25C 400 A
Collector current
ICM Pulse (Note 2) 800 A
IE (Note 1) TC = 25C 400 A
Emitter current
IEM (Note 1) Pulse (Note 2) 800 A
PC (Note 3) Maximum collector dissipation TC = 25C 3470 W
Tj Junction temperature 40 ~ +150 C
T stg Storage temperature 40 ~ +125 C
Viso Isolation voltage Main terminal to Base, AC for 1 minute 6000 V
Main terminals screw M8 6.67 ~ 13.00 Nm
Mounting torque Mounting screw M6 2.84 ~ 6.00 Nm
Auxiliary terminals screw M4 0.88 ~ 2.00 Nm
Weight Typical value 1.5 kg

ELECTRICAL CHARACTERISTICS (Tj = 25 C)

Limits
Symbol Parameter Test conditions Unit
Min Typ Max
ICES Collector cutoff current VCE = VCES, VGE = 0V 5 mA
Gate-emitter
VGE(th) IC = 40mA, VCE = 10V 4.5 6.0 7.5 V
threshold voltage
IGES Gate-leakage current VGE = VGES , VCE = 0V 0.5 A
Collector-emitter Tj = 25C 4.40 5.72
VCE(sat) IC = 400A, VGE = 15V (Note 4) V
saturation voltage Tj = 125C 4.80
Cies Input capacitance 43 nF
VCE = 10V
Coes Output capacitance 2.0 nF
VGE = 0V
Cres Reverse transfer capacitance 1.0 nF
QG Total gate charge VCC = 1650V, IC = 400A, VGE = 15V 3.3 C
td (on) Turn-on delay time VCC = 1650V, IC = 400A 1.00 s
tr Turn-on rise time VGE1 = VGE2 = 15V 2.00 s
td (off) Turn-off delay time RG = 7.5 2.00 s
tf Turn-off fall time Resistive load switching operation 1.00 s
VEC (Note 1) Emitter-collector voltage IE = 400A, VGE = 0V 3.30 4.29 V
trr (Note 1) Reverse recovery time IE = 400A 1.20 s
Qrr (Note 1) Reverse recovery charge die / dt = 800A / s 100 C
Rth(j-c)Q IGBT part (Per 1/2 module) 0.036 C/W
Thermal resistance
Rth(j-c)R FWDi part (Per 1/2 module) 0.072 C/W
Rth(c-f) Contact thermal resistance Case to fin, conductive grease applied (Per 1/2 module) 0.016 C/W
Note 1. IE, VEC, t rr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2. Pulse width and repetition rate should be such that the device junction temp. (Tj ) does not exceed Tjmax rating.
3. Junction temperature (Tj ) should not increase beyond 150C.
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.

HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules)

Feb.1999
 MITSUBISHI HVIGBT MODULES
ARY
LIMIN
.
ation nge.
pecific to cha
PRE e: Th
Notice parame
tr
o t a final s subject
is is nic limits a
re CM400DY-66H
Som
HIGH POWER SWITCHING USE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS TRANSFER CHARACTERISTICS
(TYPICAL) (TYPICAL)
800 800
Tj=25C VGE=12V VCE=10V
COLLECTOR CURRENT IC (A)

COLLECTOR CURRENT IC (A)

700 700
VGE=13V VGE=11V
600 600
VGE=14V
500 500
VGE=15V
400 VGE=10V 400

300 VGE=20V 300

200 VGE=9V 200

100 VGE=8V 100 Tj = 25C

VGE=7V Tj = 125C
0 0
0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20

COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V)

COLLECTOR-EMITTER SATURATION COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS VOLTAGE CHARACTERISTICS
(TYPICAL) (TYPICAL)
8 10
SATURATION VOLTAGE VCE(sat) (V)

SATURATION VOLTAGE VCE(sat) (V)

VGE=15V Tj = 25C
7
8 IC = 800A
COLLECTOR-EMITTER

COLLECTOR-EMITTER

5 IC = 400A
6
4

3 4

2
2 IC = 160A
1 Tj = 25C
Tj = 125C
0 0
0 200 400 600 800 0 4 8 12 16 20

COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V)

FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
104
7 Tj=25C
5
EMITTER CURRENT IE (A)

3
2
103
7
5
3
2
102
7
5
3
2
101
0 1 2 3 4 5

EMITTER-COLLECTOR VOLTAGE VEC (V)

Feb.1999