INA332

INA3
32 INA
233
2

INA2332
SBOS216B SEPTEMBER 2001 - REVISED OCTOBER 2006

Low-Power, Single-Supply, CMOS

INSTRUMENTATION AMPLIFIERS

FEATURES APPLICATIONS
DESIGNED FOR LOW COST INDUSTRIAL SENSOR AMPLIFIERS:
HIGH GAIN ACCURACY: G = 5, 0.07%, 2ppm/C Bridge, RTD, Thermocouple, Position
GAIN SET WITH EXT. RESISTORS FOR > 5V/V PHYSIOLOGICAL AMPLIFIERS: ECG, EEG, EMG
HIGH CMRR: 73dB DC, 50dB at 45kHz A/D CONVERTER SIGNAL CONDITIONING
LOW BIAS CURRENT: 0.5pA DIFFERENTIAL LINE RECEIVERS WITH GAIN
BANDWIDTH, SLEW RATE: 2.0MHz, 5V/s FIELD UTILITY METERS
RAIL-TO-RAIL OUTPUT SWING: (V+) 0.02V PCMCIA CARDS
WIDE TEMPERATURE RANGE: 55C to +125C AUDIO AMPLIFIERS
LOW QUIESCENT CURRENT: 490A max/chan COMMUNICATION SYSTEMS
SHUTDOWN: 0.01A TEST EQUIPMENT
MSOP-8 SINGLE AND TSSOP-14 DUAL PACKAGES AUTOMOTIVE INSTRUMENTATION

DESCRIPTION
The INA332 and INA2332 are rail-to-rail output, low-power The INA332 rejects line noise and its harmonics because
CMOS instrumentation amplifiers that offer wide range, single- common-mode error remains low even at higher frequencies.
supply, and bipolar-supply operation. Using a special manu-
High bandwidth and slew rate make the INA332 ideal for
facturing flow, the INA332 family provides the lowest cost
directly driving sampling Analog-to-Digital (A/D) converters
available, while still achieving low-noise amplification of dif-
as well as general-purpose applications.
ferential signals with low quiescent current of 415A (drop-
ping to 0.01A when shut down). Returning to normal opera- With high precision, low cost, and small packages, the
tion within microseconds, this INA can be used for battery or INA332 outperforms discrete designs.
multichannel applications. Additionally, because they are specified for a wide tempera-
Configured internally in a gain of 5V/V, the INA332 offers ture range of 55C to +125C, the INA332 family can be
flexibility in higher gains by choosing external resistors. used in demanding environments.

R1 R2

G = 5 + 5(R2/R1) RG
INA2332
40k 10k INA332
VREF 40k
Ch A
10k
A1 A3 VOUT
VIN A2

Ch B
VIN+

V+ V Shutdown

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

All trademarks are the property of their respective owners.

PRODUCTION DATA information is current as of publication date. Copyright 2001-2006, Texas Instruments Incorporated
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

www.ti.com
ABSOLUTE MAXIMUM RATINGS(1) ELECTROSTATIC
Supply Voltage, V+ to V .................................................................... 7.5V
Signal Input Terminals, Voltage(2) ..................... (V) 0.5V to (V+) + 0.5V DISCHARGE SENSITIVITY
Current(2) ..................................................... 10mA
Output Short-Circuit(3) .............................................................. Continuous This integrated circuit can be damaged by ESD. Texas Instru-
Operating Temperature .................................................. 55C to +125C ments recommends that all integrated circuits be handled with
Storage Temperature ...................................................... 65C to +150C
appropriate precautions. Failure to observe proper handling
Junction Temperature .................................................................... +150C
and installation procedures can cause damage.
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade ESD damage can range from subtle performance degradation
device reliability. (2) Input terminals are diode-clamped to the power-supply rails. to complete device failure. Precision integrated circuits may be
Input signals that can swing more than 0.5V beyond the supply rails should be
current limited to 10mA or less. (3) Short-circuit to ground, one amplifier per
more susceptible to damage because very small parametric
package. changes could cause the device not to meet its published
specifications.

PACKAGE/ORDERING INFORMATION(1)
SPECIFIED
PACKAGE TEMPERATURE PACKAGE ORDERING TRANSPORT
PRODUCT PACKAGE-LEAD DESIGNATOR RANGE MARKING NUMBER MEDIA, QUANTITY
Single
INA332AIDGK MSOP-8 DGK 55C to +125C B32 INA332AIDGKT Tape and Reel, 250
" " " " " INA332AIDGKR Tape and Reel, 2500
Dual
INA2332AIPW TSSOP-14 PW 55C to +125C 2332A INA2332AIPWT Tape and Reel, 250
" " " " " INA2332AIPWR Tape and Reel, 2500

NOTE: (1) For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet, or see the TI web site at
www.ti.com.

PIN CONFIGURATION
Top View

INA2332

INA332 RGA 1 14 Shutdown A

VINA 2 13 VOUTA
RG 1 8 Shutdown
VIN+A 3 12 REFA
VIN 2 7 V+
V 4 11 V+
VIN+ 3 6 VOUT
VIN+B 5 10 REFB
V 4 5 REF
VINB 6 9 VOUTB
MSOP-8 (DGK) RGB 7 8 Shutdown B

Dual, TSSOP-14 (PW)

2
INA332, INA2332
www.ti.com SBOS216B
ELECTRICAL CHARACTERISTICS: VS = +2.7V TO +5.5V
BOLDFACE limits apply over the specified temperature range, TA = 55C TO +125C
At TA = +25C, RL = 10k, G = 25, and VCM = VS /2, unless otherwise noted.

INA332AIDGK
INA2332AIPW
PARAMETER CONDITION MIN TYP MAX UNITS
INPUT
Input Offset Voltage, RTI VS = +5V 2 8 mV
Over Temperature VOS 9 mV
Temperature Coefficient dVOS/dT 5 V/C
vs Power Supply PSRR VS = +2.7V to +5.5V 50 250 V/V
Over Temperature 260 V/V
Long-Term Stability 0.4 V/month
Input Impedance 1013 || 3 || pF
Input Common-Mode Range VS = 2.7V 0.35 1.5 V
VS = 5V 0.55 3.8 V
Common-Mode Rejection CMRR VS = 5V, VCM = 0.55V to 3.8V 60 73 dB
Over Temperature VS = 5V, VCM = 0.55V to 3.8V 60 dB
VS = 2.7V, VCM = 0.35V to 1.5V 73 dB
Crosstalk, Dual 114 dB
INPUT BIAS CURRENT VCM = VS/2
Bias Current IB 0.5 10 pA
Offset Current IOS 0.5 10 pA
NOISE, RTI RS = 0
Voltage Noise: f = 10Hz eN 280 nV/Hz
f = 100Hz 96 nV/Hz
f = 1kHz 46 nV/Hz
f = 0.1Hz to 10Hz 7 Vp-p
Current Noise: f = 1kHz iN 0.5 fA/Hz
GAIN(1)
Gain Equation, Externally Set G>5 G = 5 + 5(R2/R1)
Range of Gain 5 1000 V/V
Gain Error 0.07 0.4 %
vs Temperature G=5 2 10 ppm/C
Nonlinearity G = 25, VS = 5V, VO = 0.05 to 4.95 0.001 0.010 % of FS
Over Temperature 0.002 0.015 % of FS
OUTPUT
Output Voltage Swing from Rail(2) G 10 50 25 mV
Over Temperature 50 mV
Capacitance Load Drive See Typical Characteristics(3) pF
Short-Circuit Current ISC +48/32 mA
FREQUENCY RESPONSE
Bandwidth, 3dB BW G = 25 2.0 MHz
Slew Rate SR VS = 5V, G = 25 5 V/s
Settling Time, 0.1% tS G = 25, CL = 100pF, VO = 2V step 1.7 s
0.01% 2.5 s
Overload Recovery 50% Input Overload G = 25 2 s
POWER SUPPLY
Specified Voltage Range +2.7 +5.5 V
Operating Voltage Range +2.5 to +5.5 V
Quiescent Current per Channel IQ VSD > 2.5(4) 415 490 A
Over Temperature 600 A
Shutdown Quiescent Current/Chan ISD VSD < 0.8(4) 0.01 1 A
TEMPERATURE RANGE
Specified/Operating Range 55 +125 C
Storage Range 65 +150 C
Thermal Resistance JA MSOP-8, TSSOP-14 Surface Mount 150 C/W

NOTES: (1) Does not include errors from external gain setting resistors.
(2) Output voltage swings are measured between the output and power-supply rails. Output swings to rail only if G 10. Output does not swing to
positive rail if gain is less than 10.
(3) See typical characteristic curve, Percent Overshoot vs Load Capacitance.
(4) See typical characteristic curve, Shutdown Voltage vs Supply Voltage.

INA332, INA2332 3
SBOS216B www.ti.com
TYPICAL CHARACTERISTICS
At TA = +25C, VS = 5V, VCM = VS /2, RL = 10k, and CL = 100pF, unless otherwise noted.

COMMON-MODE REJECTION RATIO

GAIN vs FREQUENCY vs FREQUENCY
80 120
70
100
60 Gain = 500
50
Gain = 100 80

CMRR (dB)
40
Gain (dB)

Gain = 25
30 60
20 Gain = 5
40
10
0
20
10
20 0
10 100 1k 10k 100k 1M 10M 10 100 1k 10k 100k
Frequency (Hz) Frequency (Hz)

POWER-SUPPLY REJECTION RATIO

vs FREQUENCY MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
100 6
VS = 5.5V
90
Maximum Output Voltage (Vp-p)

5
80 VS = 5.0V
70
4
PSRR (dB)

60
50 3
40 VS = 2.7V
2
30
20
1
10
0 0
1 10 100 1k 10k 100k 100 1k 10k 100k 1M 10M
Frequency (Hz) Frequency (Hz)

NOISE vs FREQUENCY 0.1Hz TO 10Hz VOLTAGE NOISE

10k 100

1k 10
VNOISE (nV/Hz)

INOISE (fA/Hz)

2V/div

100 1

10 0.1
1 10 100 1k 10k 100k 1s/div
Frequency (Hz)

4
INA332, INA2332
www.ti.com SBOS216B
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25C, VS = 5V, VCM = VS /2, RL = 10k, and CL = 100pF, unless otherwise noted.

COMMON-MODE INPUT RANGE

OUTPUT SWING vs LOAD RESISTANCE vs REFERENCE VOLTAGE
25 6

OutputReferred to Ground (V)

5
20
Outside of Normal Operation
Swing to Rail (mV)

4
15
To Positive Rail 3
REF
10 Increasing
2
To Negative Rail
5
1

0 0
0 10k 20k 30k 40k 50k 0 1 2 3 4 5
RLOAD () Input Common-Mode Voltage (V)

QUIESCENT CURRENT AND SHUTDOWN CURRENT QUIESCENT CURRENT AND SHUTDOWN CURRENT
vs POWER SUPPLY vs TEMPERATURE
500 600
450 550
IQ 500
400
450
350
400
IQ (A), ISD (nA)

IQ
300 350
IQ (A)

250 300
200 250
200
150
150
100
100
50 ISD
ISD 50
0 0
2.5 3 3.5 4 4.5 5 5.5 75 50 25 0 25 50 75 100 125 150
Supply Voltage (V) Temperature (C)

SHORT-CIRCUIT CURRENT vs POWER SUPPLY SHORT-CIRCUIT CURRENT vs TEMPERATURE

60 60
ISC+ ISC+
50 50

40 40
ISC ISC
ISC (mA)

ISC (mA)

30 30

20 20

10 10

0 0
2.5 3 3.5 4 4.5 5 5.5 75 50 25 0 25 50 75 100 125 150
Supply Voltage (V) Temperature (C)

INA332, INA2332 5
SBOS216B www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25C, VS = 5V, VCM = VS /2, RL = 10k, and CL = 100pF, unless otherwise noted.

SMALL-SIGNAL STEP RESPONSE (G = 5) SMALL-SIGNAL STEP RESPONSE (G = 100)

100mV/div

50mV/div
4s/div 4s/div

SMALL-SIGNAL STEP RESPONSE SMALL-SIGNAL STEP RESPONSE

(G = 5, CL = 1000pF) (G = 100, CL = 1000pF)
100mV/div

50mV/div

4s/div 10s/div

SMALL-SIGNAL STEP RESPONSE

(G = 100, CL = 4700pF) LARGE-SIGNAL STEP RESPONSE (G = 25)
50mV/div

1V/div

10s/div 10s/div

6
INA332, INA2332
www.ti.com SBOS216B
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25C, VS = 5V, VCM = VS /2, RL = 10k, and CL = 100pF, unless otherwise noted.

SETTLING TIME vs GAIN PERCENT OVERSHOOT vs LOAD CAPACITANCE

60 100
Output 100mVp-p
Output 2Vp-p 90 Differential Drive
50 Differential
Input Drive 80
G=5
70
Settling Time (s)

40

Overshoot (%)
60
0.01%
30 50
40
20 G = 25
30
20
10 0.1%
10
0 0
1 10 100 1k 10 100 1k 10k
Gain (V/V) Load Capacitance (pF)

SHUTDOWN VOLTAGE vs SUPPLY VOLTAGE SHUTDOWN TRANSIENT BEHAVIOR

3

Operation in this Region

2.5 VSD
is not Recommended
Normal Operation Mode
2
Shutdown (V)

1V/div

1.5

1
Shutdown Mode
0.5 VOUT
Part Draws Below 1A Quiescent Current
0
2.5 3 3.5 4 4.5 5 5.5 50s/div
Supply Voltage (V)

OFFSET VOLTAGE DRIFT

OFFSET VOLTAGE PRODUCTION DISTRIBUTION PRODUCTION DISTRIBUTION
25 20
18
Percentage of Amplifiers (%)
Percentage of Amplifiers (%)

20 16
14
15 12
10
10 8
6
5 4
2
0 0
14
13
11
10
8
7
6
4
3
1
0
1
3
4
6
7
8
10
11
13
14
10
9
8
7
6
5
4
3
2
1
0
1
2
3
4
5
6
7
8
9
10

Offset Voltage (mV) Offset Voltage (V/C)

INA332, INA2332 7
SBOS216B www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25C, VS = 5V, VCM = VS /2, RL = 10k, and CL = 100pF, unless otherwise noted.

SLEW RATE vs TEMPERATURE INPUT BIAS CURRENT vs TEMPERATURE

8 10000

7
1000

Input Bias Current (pA)

6
Slew Rate (V/s)

5 100
4

3 10

2
1
1

0 0.1
75 50 25 0 25 50 75 100 125 150 75 50 25 0 25 50 75 100 125 150
Temperature (C) Temperature (C)

CHANNEL SEPARATION vs FREQUENCY OUTPUT VOLTAGE SWING vs OUTPUT CURRENT

120 5

100
4
Output Voltage (V)

80
Separation (dB)

3
125C 25C 55C
60
2
40

1
20

0 0
1 10 100 1k 10k 100k 1M 10M 0 5 10 15 20 25 30 35 40 45 50 55 60
Frequency (Hz) Output Current (mA)

8
INA332, INA2332
www.ti.com SBOS216B
APPLICATIONS INFORMATION OPERATING VOLTAGE
The INA332 family is fully specified over a supply range of
The INA332 is a modified version of the classic two op amp
+2.7V to +5.5V, with key parameters tested over the tempera-
instrumentation amplifier, with an additional gain amplifier.
ture range of 55C to +125C. Parameters that vary signifi-
Figure 1 shows the basic connections for the operation of the cantly with operating conditions, such as load conditions or
INA332 and INA2332. The power supply should be capaci- temperature, are shown in the Typical Characteristics.
tively decoupled with 0.1F capacitors as close to the INA332
The INA332 may be operated on a single supply. Figure 2
as possible for noisy or high-impedance applications.
shows a bridge amplifier circuit operated from a single +5V
The output is referred to the reference terminal, which must supply. The bridge provides a small differential voltage riding
be at least 1.2V below the positive supply rail. on an input common-mode voltage.

G = 5 + 5 (R2 / R1 )

DESIRED GAIN
Short VOUT to RG
R1 R2 (V/V) R1 R2
for G = 5
5 OPEN SHORT
RG 10 100k 100k
1 50 10k 90k
100 10k 190k
40k 10k
5
REF
40k

A1 10k 6
2 A3 VO = ((VIN+) (VIN )) G
VIN
A2
VIN+ 3

Also drawn in simplified form:

8 7 4
V+
Shutdown

VIN+ 3 7
Shutdown (For Single
0.1F Supply) 0.1F 8
5 6 VOUT
REF INA332
V+ V 1
VIN 2
4

V RG

FIGURE 1. Basic Connections.

+5V

V+
VIN+ Shutdown
Bridge 3 7
Sensor
8
REF(1) 5 6 VOUT
INA332
VIN 1
2
4
V NOTE: (1) REF should be adjusted for the desired output level,
RG keeping in mind that the value of REF affects the common-mode
input range. See Typical Characteristics.

FIGURE 2. Single-Supply Bridge Amplifier.

INA332, INA2332 9
SBOS216B www.ti.com
SETTING THE GAIN For proper operation, a path must be provided for input bias
The ratio of R2 to R1, or the impedance between pins 1, 5, currents for both inputs. Without input bias current paths, the
and 6, determines the gain of the INA332. With an internally inputs will float to a potential that exceeds common-mode
set gain of 5, the INA332 can be programmed for gains range and the input amplifier will saturate. Figure 3 shows
greater than 5 according to the following equation: how bias current path can be provided in the cases of
microphone applications, thermistor applications, ground re-
turns, and dc-coupled resistive bridge applications.
G = 5 + 5 (R2/R1)

The INA332 is designed to provide accurate gain, with gain V+

Shutdown
error less than 0.4%. Setting gain with matching TC resistors VIN+ 3 7
will minimize gain drift. Errors from external resistors will add Microphone, 8
5 6
directly to the error, and may become dominant error sources. Hydrophone, REF INA332 VOUT
etc. VIN 2 1
4
COMMON-MODE INPUT RANGE
47k V RG
The upper limit of the common-mode input range is set by the
common-mode input range of the second amplifier, A2, to VB(1)
1.2V below positive supply. Under most conditions, the
amplifier operates beyond this point with reduced perfor-
mance. The lower limit of the input range is bounded by the
output swing of amplifier A1, and is a function of the refer- V+
ence voltage according to the following equation: Shutdown
VIN+ 3 7
8
VOA1 = 5/4 VCM 1/4 VREF Transformer REF
5 INA332
6 VOUT
VIN 2 1

(See typical characteristic curve, Common-Mode Input Range 4

vs Reference Voltage). Center-tap

VB(1) V RG provides bias
current return

REFERENCE
The reference terminal defines the zero output voltage level. VEX
Bridge
In setting the reference voltage, the common-mode input of Amplifier
A3 should be considered according to the following equation: V+
Shutdown
VIN+ 3 7
Bridge
VOA2 = VREF + 5 (VIN+ VIN) Sensor
8
5 6 VOUT
REF INA332
VIN 2 1
For ensured operation, VOA2 should be less than VDD 1.2V.
4
The reference pin requires a low-impedance connection. As
little as 160 in series with the reference pin will degrade the V RG Bridge resistance
provides bias
CMRR to 50dB. The reference pin may be used to compen- current return
sate for the offset voltage (see the Offset Trimming section). NOTE: (1) VB is bias voltage within
The reference voltage level also influences the common- common-mode range, dependent
mode input range (see the Common-Mode Input Range on REF.

section).
FIGURE 3. Providing an Input Common-Mode Path.

INPUT BIAS CURRENT RETURN

When differential source impedance is low, the bias current
With a high input impedance of 1013, the INA332 is ideal for return path can be connected to one input. With higher
use with high-impedance sources. The input bias current of source impedance, two equal resistors will provide a bal-
less than 10pA makes the INA332 nearly independent of anced input. The advantages are lower input offset voltage
input impedance and ideal for low-power applications. due to bias current flowing through the source impedance
and better high-frequency gain.

10
INA332, INA2332
www.ti.com SBOS216B
SHUTDOWN MODE +5V
The shutdown pin of the INA332 is nominally connected to V+.
When the pin is pulled below 0.8V on a 5V supply, the INA332
goes into sleep mode within nanoseconds. For actual shut- 0.1F
down threshold, see typical characteristic curve, Shutdown
V+ Shutdown 0.1F
Voltage vs Supply Voltage. Drawing less than 2A of current, 3 7
VIN+
and returning from sleep mode in microseconds, the shutdown 8 VOUT
5 6
feature is useful for portable applications. Once in sleep mode, REF INA332
the amplifier has high output impedance, making the INA332 1 OPA340 VOUT
VIN 2
suitable for multiplexing. 4

V RG

RAIL-TO-RAIL OUTPUT
A class AB output stage with common-source transistors is FIGURE 5. Output Buffering Circuit. Able to drive loads as
used to achieve rail-to-rail output for gains of 10 or greater. low as 600.
For resistive loads greater than 10k, the output voltage can
swing to within 25mV of the supply rail while maintaining low
gain error. For heavier loads and over temperature, see the V+
Shutdown
typical characteristic curve, Output Voltage Swing vs Output 3 7
VIN+
Current. The INA332s low output impedance at high frequen- 8
cies makes it suitable for directly driving Capacitive-Input REF(1) 5 6 VOUT
INA332
A/D converters, as shown in Figure 4. 2 1
VIN
4

V RG
+5V

V+
Shutdown
3 7 OPA336
VIN+ Adjustable
8 VOUT ADS7818 12-Bits Voltage
5 6
REF INA332 or
1 ADS7822
2 NOTE: (1) REF should be adjusted for the desired output level.
VIN
4 The value of REF affects the common-mode input range.
V
RG
FIGURE 6. Optional Offset Trimming Voltage.

fS < 100kHz
INPUT PROTECTION
FIGURE 4. INA332 Directly Drives Capacitive-Input, High-
Device inputs are protected by ESD diodes that will conduct
Speed A/D Converter.
if the input voltages exceed the power supplies by more than
500mV. Momentary voltages greater than 500mV beyond
OUTPUT BUFFERING
the power supply can be tolerated if the current through the
The INA332 is optimized for a load impedance of 10k or input pins is limited to 10mA. This is easily accomplished with
greater. For higher output current the INA332 can be buff- input resistor RLIM, as shown in Figure 7. Many input signals
ered using the OPA340, as shown in Figure 5. The OPA340 are inherently current-limited to less than 10mA; therefore, a
can swing within 50mV of the supply rail, driving a 600 load. limiting resistor is not required.
The OPA340 is available in the tiny MSOP-8 package.

OFFSET TRIMMING V+
Shutdown
RLIM
The INA332 is laser trimmed for low offset voltage. In the 3 7
VIN+
event that external offset adjustment is required, the offset 8
IOVERLOAD 5 6 VOUT
can be adjusted by applying a correction voltage to the 10mA max
REF INA332
reference terminal. Figure 6 shows an optional circuit for 1
VIN 2
trimming offset voltage. The voltage applied to the REF 4
RLIM
terminal is added to the output signal. The gain from REF to V RG
VOUT is +1. An op amp buffer is used to provide low
impedance at the REF terminal to preserve good common-
mode rejection. FIGURE 7. Sample Output Buffering Circuit.

INA332, INA2332 11
SBOS216B www.ti.com
OFFSET VOLTAGE ERROR CALCULATION FEEDBACK CAPACITOR IMPROVES RESPONSE
The offset voltage (VOS) of the INA332AIDGK is specified at For optimum settling time and stability with high-impedance
a maximum of 500V with a +5V power supply and the feedback networks, it may be necessary to add a feedback
common-mode voltage at VS/2. Additional specifications for capacitor across the feedback resistor, RF, as shown in
power-supply rejection and common-mode rejection are pro- Figure 8. This capacitor compensates for the zero created by
vided to allow the user to easily calculate worst-case ex- the feedback network impedance and the INA332s RG-pin
pected offset under the conditions of a given application. input capacitance (and any parasitic layout capacitance).
Power-Supply Rejection Ratio (PSRR) is specified in V/V. The effect becomes more significant with higher impedance
For the INA332, worst case PSRR is 200V/V, which means networks. Also, RX and CL can be added to reduce high-
for each volt of change in power supply, the offset may shift frequency noise.
up to 200V. Common-Mode Rejection Ratio (CMRR) is
specified in dB, which can be converted to V/V using the
V+
following equation:
Shutdown
3 7
VIN+
CMRR (in V/V) = 10[(CMRR in dB)/20] 106 8
INA332 RX
5 6
REF CIN VOUT
For the INA332, the worst case CMRR over the specified
common-mode range is 60dB (at G = 25) or about 30V/V 1 CL
This means that for every volt of change in common-mode, VIN 2 RG
4
the offset will shift less than 30V.
These numbers can be used to calculate excursions from the V
RIN RF
specified offset voltage under different application condi-
RIN CIN = RF CF
tions. For example, an application might configure the ampli- CF
fier with a 3.3V supply with 1V common-mode. This configu-
ration varies from the specified configuration, representing a
1.7V variation in power supply (5V in the offset specification Where CIN is equal to the INA332s input capacitance
versus 3.3V in the application) and a 0.65V variation in (approximately 3pF) plus any parastic layout capacitance.
common-mode voltage from the specified VS/2.
FIGURE 8. Feedback Capacitor Improves Dynamic Perfor-
Calculation of the worst-case expected offset would be as
mance.
follows:

It is suggested that a variable capacitor be used for the

Adjusted VOS = Maximum specified VOS + feedback capacitor since input capacitance may vary be-
(power-supply variation) PSRR + tween instrumentation amplifiers, and layout capacitance is
(common-mode variation) CMRR difficult to determine. For the circuit shown in Figure 8, the
value of the variable feedback capacitor should be chosen by
VOS = 0.5mV + (1.7V 200V) + (0.65V 30V) the following equation:
= 0.860mV
RIN CIN = RF CF

However, the typical value will be smaller, as seen in the

Typical Characteristics. Where CIN is equal to the INA332s RG-pin input capacitance
(typically 3pF) plus the layout capacitance. The capacitor can
be varied until optimum performance is obtained.

12
INA332, INA2332
www.ti.com SBOS216B
APPLICATION CIRCUITS Filtering can be modified to suit application needs by chang-
ing the capacitor value of the output filter.
MEDICAL ECG APPLICATIONS
Figure 9 shows the INA332 configured to serve as a low-cost LOW-POWER, SINGLE-SUPPLY DATA
ECG amplifier, suitable for moderate accuracy heart-rate ACQUISITION SYSTEMS
applications such as fitness equipment. The input signals are
Refer to Figure 4 to see the INA332 configured to drive an
obtained from the left and right arms of the patient. The
ADS7818. Functioning at frequencies of up to 500kHz, the
common-mode voltage is set by two 2M resistors. This
INA332 is ideal for low-power data acquisition.
potential through a buffer provides optional right leg drive.

VR
OPA336

0.1F 1.6nF

V+ 1M
Shutdown
100k 1M
VIN+ 3 7
Left Arm
8 10k
REF 5 6
INA332
100k VIN 1 OPA336 VOUT PUT
2 10k
Right Arm
4 VR

+5V
V RG
2M 2M 1M

2k
VR = +2.5V
Right
OPA336
2k Leg

FIGURE 9. Simplified ECG Circuit for Medical Applications.

INA332, INA2332 13
SBOS216B www.ti.com
 PACKAGE OPTION ADDENDUM

www.ti.com 10-Jun-2014

PACKAGING INFORMATION

Orderable Device Status Package Type Package Pins Package Eco Plan Lead/Ball Finish MSL Peak Temp Op Temp (C) Device Marking Samples
(1) Drawing Qty (2) (6) (3) (4/5)

INA2332AIPWR ACTIVE TSSOP PW 14 2500 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -55 to 125 INA
& no Sb/Br) 2332A
INA2332AIPWT ACTIVE TSSOP PW 14 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -55 to 125 INA
& no Sb/Br) 2332A
INA2332AIPWTG4 ACTIVE TSSOP PW 14 250 Green (RoHS CU NIPDAU Level-2-260C-1 YEAR -55 to 125 INA
& no Sb/Br) 2332A
INA332AIDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -55 to 125 B32
& no Sb/Br)
INA332AIDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -55 to 125 B32
& no Sb/Br)
INA332AIDGKT ACTIVE VSSOP DGK 8 250 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -55 to 125 B32
& no Sb/Br)
INA332AIDGKTG4 ACTIVE VSSOP DGK 8 250 Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR -55 to 125 B32
& no Sb/Br)

(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.

(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)

(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

Addendum-Page 1
 PACKAGE OPTION ADDENDUM

www.ti.com 10-Jun-2014

(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.

(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2
 PACKAGE MATERIALS INFORMATION

www.ti.com 26-Jan-2013

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device Package Package Pins SPQ Reel Reel A0 B0 K0 P1 W Pin1
Type Drawing Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA2332AIPWR TSSOP PW 14 2500 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
INA2332AIPWT TSSOP PW 14 250 180.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
INA332AIDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
INA332AIDGKT VSSOP DGK 8 250 180.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

Pack Materials-Page 1
 PACKAGE MATERIALS INFORMATION

www.ti.com 26-Jan-2013

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
INA2332AIPWR TSSOP PW 14 2500 367.0 367.0 35.0
INA2332AIPWT TSSOP PW 14 250 210.0 185.0 35.0
INA332AIDGKR VSSOP DGK 8 2500 367.0 367.0 35.0
INA332AIDGKT VSSOP DGK 8 250 210.0 185.0 35.0

Pack Materials-Page 2
 IMPORTANT NOTICE

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