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    Chemical Vapour Deposition

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    karthik sampath
    Chemical vapor deposition (CVD) is a process where chemical precursors react in the vapor phase to form a solid material coating on a heated substrate. The CVD process involves gas phase precursor decomposition, diffusion to the substrate surface, physical adsorption, and surface decomposition. CVD can be classified by operating pressure or physical vapor characteristics. Metalorganic CVD was used to deposit lead zirconate titanate thin films for applications like ferroelectric random access memory. Liquid precursors were vaporized and reacted at temperatures from 450-550°C to form high quality films. While CVD allows for conformal coatings and composition control, it has limitations like high temperatures/vacuum requirements and high operating costs.

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    Chemical Vapour Deposition

    Uploaded by

    karthik sampath
    197 views10 pages
    Chemical vapor deposition (CVD) is a process where chemical precursors react in the vapor phase to form a solid material coating on a heated substrate. The CVD process involves gas phase precursor decomposition, diffusion to the substrate surface, physical adsorption, and surface decomposition. CVD can be classified by operating pressure or physical vapor characteristics. Metalorganic CVD was used to deposit lead zirconate titanate thin films for applications like ferroelectric random access memory. Liquid precursors were vaporized and reacted at temperatures from 450-550°C to form high quality films. While CVD allows for conformal coatings and composition control, it has limitations like high temperatures/vacuum requirements and high operating costs.

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    cvd process and its application in surface modification on an electronic

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    Chemical vapor deposition (CVD) is a process where chemical precursors react in the vapor phase to form a solid material coating on a heated substrate. The CVD process involves gas phase precursor decomposition, diffusion to the substrate surface, physical adsorption, and surface decomposition. CVD can be classified by operating pressure or physical vapor characteristics. Metalorganic CVD was used to deposit lead zirconate titanate thin films for applications like ferroelectric random access memory. Liquid precursors were vaporized and reacted at temperatures from 450-550°C to form high quality films. While CVD allows for conformal coatings and composition control, it has limitations like high temperatures/vacuum requirements and high operating costs.

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    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    197 views10 pages

    Chemical Vapour Deposition

    Uploaded by

    karthik sampath
    Chemical vapor deposition (CVD) is a process where chemical precursors react in the vapor phase to form a solid material coating on a heated substrate. The CVD process involves gas phase precursor decomposition, diffusion to the substrate surface, physical adsorption, and surface decomposition. CVD can be classified by operating pressure or physical vapor characteristics. Metalorganic CVD was used to deposit lead zirconate titanate thin films for applications like ferroelectric random access memory. Liquid precursors were vaporized and reacted at temperatures from 450-550°C to form high quality films. While CVD allows for conformal coatings and composition control, it has limitations like high temperatures/vacuum requirements and high operating costs.

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    of 10

    CHEMICAL VAPOUR

    DEPOSITION

    KARTHIK SAMPATHKUMAR
    20763
    CONTENTS

    INTRODUCTION
    How CVD Works?
    CLASSIFICATION
    ILLUSTRATION
    LIMITATIONS
    CONCLUSION
    INTRODUCTION
    Vapor deposition refers to any process through which
    material, in vapor state, is condensed through
    condensation, chemical reaction or conversion to form
    solid material deposit on the surface of the substrate.

    Vapor deposit can be classified majorly into


    Chemical Vapor Deposit(CVD) and
    Physical Vapor Deposit(PVD)

    Chemical Vapor Deposition is a process in which two or


    more chemical precursors are introduced in a reaction
    chamber, at vapour phase (i.e. either low or high
    pressures based on the process), where the precursors
    react to form coating on the heated substrate.
    How CVD Works?
    The CVD Mechanism involves the following steps

    Precursors (chemical reactants) gas phase


    decomposition:
    In this step the reactants in gas phase is injected
    inside a gas chamber.
    Diffusion to the surface:
    At this stage the injected gas phase reactants react
    to form the coating material along with the by-products
    and are diffused on the substrate surface.
    Physical adsorption:
    The diffused product adheres along the substrate
    surface.
    Surface decomposition:
    The adhered product forms a thin layer on the
    surface and the by-products are desorbed.
    CLASSIFICATION
    The CVD process can be classified as follows
    Based on operating pressure
    1. Atmospheric pressure CVD
    2. Low pressure CVD
    3. Ultrahigh Vacuum CVD
    Based on physical characteristics of vapor
    1. Aerosol assisted CVD
    2. Direct liquid injection CVD

    Plasma enhanced CVD


    Atomic layer CVD
    Metalorganic CVD
    Combustion CVD
    Photo initiated CVD
    ILLUSTRATION
    There has been increasing interest in lead zirconate
    titanate (PZT) thin films due to many applications such as
    surface acoustic wave (SAW) devices, infrared sensors,
    many other microelectromechanical systems (MEMS) and
    especially nonvolatile ferroelectric random access
    memories (FeRAMs). FeRAMs have potential to substitute
    present commercialized nonvolatile memories such as
    flash ROM or EEPROM, because of their lower writing
    voltage and faster writing speed. PZT is one of the most
    promising ferroelectric materials for fabrication of FeRAM
    because of its higher remnant polarization and lower
    process temperature than others. So far, metal organic
    chemical vapour deposition (MOCVD), radio-frequency
    magnetron sputtering, pulsed laser deposition (PLD),
    metal-organic decomposition (MOD) and sol gel (SG)
    methods have been reported for preparation of PZT films.
    Due to the demand of high-density integration, FeRAMs
    will be required to have three-dimensional (3D)
    ferroelectric capacitors.

    Why MOCVD process is used?


    Good conformal step coverage
    Controllability of composition
    High deposition rate and
    Compatibility with current Si processes.
    The conventional bubbling MOCVD of PZT thin film is not
    suitable for mass production because many PZT precursors
    have lower vapour pressure and therefore need higher
    bubbler temperature. Precursor degradation over the time at
    high bubbler temperature becomes a problem. MOCVD with
    liquid delivery system is suggested as a solution, in which
    precursors are dissolved in solvent during transportation and
    are vaporized in a vaporizer before coming into reaction
    chamber.

    PROCESS
    The liquid solutions of each precursor were injected
    separately into vaporizer with N 2 as carrier gas. O 2 was
    used as oxidant, and was mixed with precursor vapor in
    showerhead and then flowed into reaction chamber. Lead
    bis(2,2,6,6,-tetramethyl 3,5-heptanedionate) [Pb(thd) 2 ],
    Zirconium bis(isopropoxy) bis(1-methoxy-2-methyl-2-
    propoxy) [Zr(OiPr) 2 (mmp) 2 ], and Titanium bis(isopropoxy)
    bis(1- methoxy-2-methyl-2-propoxide) [Ti(OiPr) 2 (mmp) 2 ]
    were used as precursors. The three precursors are dissolved
    in octane of 0.1mol/L concentration. Several substrate
    temperatures between 450C and 550C were used for PZT
    deposition and the pressure was from 0.5mbar to 5mbar.

    MEASUREMENTS
    Film thickness was measured using a spectroscopic
    ellipsometer. The compositional analysis of PZT films was
    performed using X-ray photoelectron spectroscopy (XPS).
    Crystal structure of the thin films and their crystallographic
    orientation were examined by X-ray diffraction (XRD) using
    Cu-K . Surface morphologies of the PZT films were
    investigated using a scanning electron microscope (SEM) and
    atomic force microscope (AFM).
    LIMITATIONS
    CVD operates at high temperatures and high
    vacuum (some cases).
    Surface preparation is required for the substrate
    since the substrate is heated.
    Selection of precursors for specific application is
    difficult since the process requires more research
    and development to select the best alternative
    available.
    Skilled labor and high operating cost is involved
    because the amount of deposition is to be
    controlled and surface measurement is often done
    with high end devices such as atomic electron
    microscope.

    CONCLUSION
    In thin film semi conductor coating, MetalOrganic CVD
    coating is one of the best method to manufacture and
    efficient process.
    REFERENCES
    http://www.pob.manchester.ac.uk/research.html
    https://www.researchgate.net
    https://en.wikipedia.org
    http://www.asminternational.org/
    http://www.indium.com/

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