*SRC=1N5711W;DI_1N5711W;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc.

-
.MODEL DI_1N5711W D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=2.03 TT=1.44n )

*
*Zetex BAT54 Spice Model v1.0 Last Revised 25/04/00
*
.MODEL BAT54 D Is=649e-9 N=1.04 RS=2.09 IKF=20e-3
+XTI=2 EG=0.58
+CJO=12.4e-12 M=0.381 VJ=0.391
+BV=50 IBV=100e-6 ISR=431e-9 NR=4.99
*
*$
*
* (c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL

*
* This model account for one of the two diodes contained in the
* BAS40-4 device. The other one is totally identical.
*
.LIB BAS40_04
*
.SUBCKT BAS40_04 A K
*
D1 A K BAS40_1
D2 A K1 BAS40_2
V1 K1 K DC 217e-3
*
.MODEL BAS40_1 D (
+LEVEL = 1 IS = 2.24014e-09 RS = 7.23547
+N = 1.02505 IKF = 0.255776
+CJO = 3.0881e-12 VJ = 119.67e-3 MJ = 183.18e-3
+FC = 0.5 XTI = 0.60541 EG = 0.75453
+TRS1 = 0.00733869 TRS2 = 1.45813e-05 IBV = 0.01
+BV = 40 TT = 6.02e-9 )
*
.MODEL BAS40_2 D (
+LEVEL = 1 IS = 5.04958e-11 RS = 0.00692754
+N = 1.10729 XTI = 1.45276 EG = 1.46766
+TRS1 = 0.0021771 TRS2 = 0.000729073 IKF = 0.0102054
+IBV = 0.01 BV = 1e3 TT = 0 )
*
.ENDS BAS40_04
*
.ENDL BAS40_04
*SRC=BAS40-05;DI_BAS40-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky
diode, dual, one node of two
.MODEL DI_BAS40-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40-06;DI_BAS40-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAS40-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40;DI_BAS40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky diode

.MODEL DI_BAS40 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS70-04;DI_BAS70-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAS70-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70-05;DI_BAS70-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAS70-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70-06;DI_BAS70-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAS70-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70;DI_BAS70;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. -

.MODEL DI_BAS70 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAT54;DI_BAT54;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

.MODEL DI_BAT54 D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54A;DI_BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54C;DI_BAT54C;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54C D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54S;DI_BAT54S;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54S D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

***********************************************************************************
********************************************************
*SRC=SD101AWS;DI_SD101AWS;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky-
SD101AWS/BWS/CWS
.MODEL DI_SD101AWS D ( IS=230n RS=2.13 BV=60.0 IBV=200n
+ CJO=2.00p M=0.333 N=1.96 TT=1.44n )
***********************************************************************************
********************************************************

*SRC=SD101CWS;DI_SD101CWS;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky

.MODEL DI_SD101CWS D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )

*SRC=SDM20N40A;DI_SDM20N40A;Diodes;Si; 40.0V 0.200A 5.00ns Diodes, Inc. Dual

Schottky, Model for Single Schottky Only
.MODEL DI_SDM20N40A D ( IS=34.0p RS=0.211 BV=40.0 IBV=15.0u
+ CJO=50.0p M=0.333 N=1.73 TT=7.20n

*SRC=SDM40E20LC;DI_SDM40E20LC;Diodes;Si; 20.0V 0.400A 10.0ns Diodes INC

Schottky Diode
.MODEL DI_SDM40E20LC D ( IS=2.83m RS=23.0m BV=20.0 IBV=250u
+ CJO=66.3p M=0.333 N=2.17 TT=14.4n

*SRC=SDM40E20LS;DI_SDM40E20LS;Diodes;Si; 20.0V 0.400A 5.00ns Diodes Inc.

Schottky
.MODEL DI_SDM40E20LS D ( IS=54.8u RS=0.132 BV=20.0 IBV=250u
+ CJO=199p M=0.333 N=1.34 TT=7.20n )

*SRC=1N5711WS;DI_1N5711WS;Diodes;Si; 70.0V 15.0mA 1.00ns Diodes Inc.

.MODEL DI_1N5711WS D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=2.03 TT=1.44n )

*SRC=1N6263W;DI_1N6263W;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky

.MODEL DI_1N6263W D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )

*SRC=BAS40-04T;DI_BAS40-04T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS40-04T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40-05T;DI_BAS40-05T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS40-05T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40-06T;DI_BAS40-06T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS40-06T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40BRW;DI_BAS40BRW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, Quad, one node of four
.MODEL DI_BAS40BRW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40DW-04;DI_BAS40DW-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.

Schottky diode, Quad, one node of four
.MODEL DI_BAS40DW-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40DW-05;DI_BAS40DW-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.

Schottky diode, Quad, one node of four
.MODEL DI_BAS40DW-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )
*SRC=BAS40DW-06;DI_BAS40DW-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.
Schottky diode, Quad, one node of four
.MODEL DI_BAS40DW-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40LP;DI_BAS40LP;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc Schottky

.MODEL DI_BAS40LP D ( IS=2.93u RS=1.29 BV=40.0 IBV=200n
+ CJO=2.30p M=0.333 N=2.39 TT=7.20n )

*SRC=BAS40T;DI_BAS40T;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky

diode
.MODEL DI_BAS40T D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40TW;DI_BAS40TW;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, Tripple, one node of three
.MODEL DI_BAS40TW D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40W;DI_BAS40W;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky

diode
.MODEL DI_BAS40W D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40W-04;DI_BAS40W-04;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS40W-04 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40W-05;DI_BAS40W-05;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS40W-05 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS40W-06;DI_BAS40W-06;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS40W-06 D ( IS=6.12u RS=0.120 BV=40.0 IBV=200n
+ CJO=5.00p M=0.333 N=2.61 TT=7.20n )

*SRC=BAS70-04T;DI_BAS70-04T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS70-04T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70-05T;DI_BAS70-05T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS70-05T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70-06T;DI_BAS70-06T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS70-06T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70BRW;DI_BAS70BRW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky

diode, quad, one node of four
.MODEL DI_BAS70BRW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
*SRC=BAS70DW-04;DI_BAS70DW-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc.
Schottky diode, quad, one node of four
.MODEL DI_BAS70DW-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70DW-05;DI_BAS70DW-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc.

Schottky diode, quad, one node of four
.MODEL DI_BAS70DW-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70DW-06;DI_BAS70DW-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc.

Schottky diode, quad, one node of four
.MODEL DI_BAS70DW-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70JW;DI_BAS70JW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAS70JW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70T;DI_BAS70T;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky

diode
.MODEL DI_BAS70T D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70TW;DI_BAS70TW;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky

diode, tripple, one node of three
.MODEL DI_BAS70TW D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70W;DI_BAS70W;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. Schottky

diode
.MODEL DI_BAS70W D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70W-04;DI_BAS70W-04;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS70W-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70W-05;DI_BAS70W-05;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS70W-05 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAS70W-06;DI_BAS70W-06;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_BAS70W-06 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )

*SRC=BAT40V;DI_BAT40V;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky

.MODEL DI_BAT40V D ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u
+ CJO=11.9p M=0.333 N=1.14 TT=7.20n )

*SRC=BAT40VC;DI_BAT40VC;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc. Schottky

.MODEL DI_BAT40VC D ( IS=82.9n RS=0.373 BV=40.0 IBV=10.0u
+ CJO=11.9p M=0.333 N=1.14 TT=7.20n )

*SRC=BAT42W;DI_BAT42W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode

.MODEL DI_BAT42W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
+ CJO=8.88p M=0.333 N=3.51 TT=7.20n )

*SRC=BAT42WS;DI_BAT42WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc

Schottky Diode
.MODEL DI_BAT42WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
+ CJO=8.88p M=0.333 N=3.51 TT=7.20n )

*SRC=BAT43W;DI_BAT43W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky Diode

.MODEL DI_BAT43W D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n

+ CJO=8.88p M=0.333 N=3.51 TT=7.20n )

*SRC=BAT43WS;DI_BAT43WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky

Diode
.MODEL DI_BAT43WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
+ CJO=8.88p M=0.333 N=3.51 TT=7.20n )

*SRC=BAT46W;DI_BAT46W;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky

.MODEL DI_BAT46W D ( IS=603n RS=0.280 BV=100 IBV=5.00u
+ CJO=7.96p M=0.333 N=1.70 TT=7.20n )

*SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, quad, one node of four
.MODEL DI_BAT54ADW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54AT;DI_BAT54AT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54AT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54AW;DI_BAT54AW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54AW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54BRW;DI_BAT54BRW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, quad, one node of four
.MODEL DI_BAT54BRW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54CDW;DI_BAT54CDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, quad, one node of four
.MODEL DI_BAT54CDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54CT;DI_BAT54CT;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54CT D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54CW;DI_BAT54CW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54CW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

***********************************************************************************
********************************************************
*SRC=BAT54DW;DI_BAT54DW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky,
dual, one of two nodes
.MODEL DI_BAT54DW D ( IS=235n RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=1.28 TT=7.20n )
***********************************************************************************
********************************************************

*SRC=BAT54JW;DI_BAT54JW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54JW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54LP;DI_BAT54LP;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc Schottky

.MODEL DI_BAT54LP D ( IS=138n RS=0.716 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=1.18 TT=7.20n )

*SRC=BAT54LPS;DI_BAT54LPS;Diodes;Si; 30.0V 0.200A 2.00ns Diodes Inc. SBR/ SKY

.MODEL DI_BAT54LPS D ( IS=20.9n RS=0.895 BV=30.0 IBV=2.00u
+ CJO=10.6p M=0.333 N=1.07 TT=2.88n )

*SRC=BAT54SDW;DI_BAT54SDW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, quad, one node of four
.MODEL DI_BAT54SDW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54ST;DI_BAT54ST;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54ST D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54SW;DI_BAT54SW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, dual, one node of two
.MODEL DI_BAT54SW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54T;DI_BAT54T;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode
.MODEL DI_BAT54T D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54TW;DI_BAT54TW;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode, tripple, one node of three
.MODEL DI_BAT54TW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54V;DI_BAT54V;Diodes;Si; 29.6V 0.200A 5.00ns Diodes Inc. One Element

of Dual Schottky Diodes
.MODEL DI_BAT54V D ( IS=124n RS=0.210 BV=29.6 IBV=2.00
+ CJO=13.3 M=0.333 N=1.19 TT=7.20n )

*SRC=BAT54W;DI_BAT54W;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode
.MODEL DI_BAT54W D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )

*SRC=BAT54WS;DI_BAT54WS;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky

diode
.MODEL DI_BAT54WS D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
*SRC=PS3S0230;DI_PD3S0230;Diodes;Si; 30.0V 0.200A 2.00ns Diodes INC Schottky
Diode
.MODEL DI_PD3S0230 D ( IS=400n RS=0.378 BV=30.0 IBV=2.00u
+ CJO=14.6p M=0.333 N=1.31 TT=2.88n )

***********************************************************************************
********************************************************
*SRC=QSBT40;DI_QSBT40;Diodes;Si; 30.0V 0.200A 50.0ns Diodes Inc. Schottky Bus
- Single Device of Multiple
.MODEL DI_QSBT40 D ( IS=500n RS=0.211 BV=30.0 IBV=2.00u
+ CJO=10.0p M=0.333 N=1.70 TT=72.0n )
***********************************************************************************
********************************************************

*SRC=SD101A;DI_SD101A;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky

.MODEL DI_SD101A D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )

*SRC=SD101AW;DI_SD101AW;Diodes;Si; 60.0V 15.0mA 1.00ns Diodes Inc. Schottky

.MODEL DI_SD101AW D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )

*SRC=SD101B;DI_SD101B;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky

.MODEL DI_SD101B D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )

*SRC=SD101BW;DI_SD101BW;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky

.MODEL DI_SD101BW D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )

*SRC=SD101BWS;DI_SD101BWS;Diodes;Si; 50.0V 15.0mA 1.00ns Diodes Inc. Schottky

.MODEL DI_SD101BWS D ( IS=1.82u RS=2.80 BV=50.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )

*SRC=SD101C;DI_SD101C;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky

.MODEL DI_SD101C D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )

*SRC=SD101CW;DI_SD101CW;Diodes;Si; 40.0V 15.0mA 1.00ns Diodes Inc. Schottky

.MODEL DI_SD101CW D ( IS=1.82u RS=2.80 BV=40.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )

*SRC=SD103ASDM;DI_SD103ASDM;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc.

Schottky Barrier Diode, quad, one node of four
.MODEL DI_SD103ASDM D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u
+ CJO=29.2 M=0.333 N=1.28 TT=14.4n )

*SRC=SD103ATW;DI_SD103ATW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky

Barrier Diode, tripple, one node of three
.MODEL DI_SD103ATW D ( IS=646n RS=0.120 BV=40.0 IBV=5.00u
+ CJO=29.2 M=0.333 N=1.28 TT=14.4n )

*SRC=SD103AW;DI_SD103AW;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc. Schottky

.MODEL DI_SD103AW D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u
+ CJO=53.0p M=0.333 N=1.70 TT=14.4n )

*SRC=SD103AWS;DI_SD103AWS;Diodes;Si; 40.0V 0.350A 10.0ns Diodes Inc.

Schottky
.MODEL DI_SD103AWS D ( IS=8.65u RS=0.120 BV=40.0 IBV=5.00u
+ CJO=53.0p M=0.333 N=1.70 TT=14.4n )

*SRC=SD103BW;DI_SD103BW;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky

.MODEL DI_SD103BW D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u
+ CJO=53.0p M=0.333 N=1.70 TT=14.4n )

*SRC=SD103BWS;DI_SD103BWS;Diodes;Si; 30.0V 0.350A 10.0ns Diodes Inc. Schottky

.MODEL DI_SD103BWS D ( IS=8.65u RS=0.120 BV=30.0 IBV=5.00u
+ CJO=53.0p M=0.333 N=1.70 TT=14.4n )

*SRC=SD103CW;DI_SD103CW;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky

.MODEL DI_SD103CW D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u
+ CJO=53.0p M=0.333 N=1.70 TT=14.4n )

*SRC=SD103CWS;DI_SD103CWS;Diodes;Si; 20.0V 0.350A 10.0ns Diodes Inc. Schottky

.MODEL DI_SD103CWS D ( IS=8.65u RS=0.120 BV=20.0 IBV=5.00u
+ CJO=53.0p M=0.333 N=1.70 TT=14.4n )

*SRC=SDM03MT40;DI_SDM03MT40;Diodes;Si; 40.0V 0.200A 5.00ns Diodes Inc.

Schottky
.MODEL DI_SDM03MT40 D ( IS=309u RS=0.210 BV=40.0 IBV=1.00u
+ CJO=2.65p M=0.333 N=6.81 TT=7.20n )

*SRC=SDM03U40;DI_SDM03U40;Diodes;Si; 30.0V 30.0mA 1.00ns Diodes Inc.

Schottky
.MODEL DI_SDM03U40 D ( IS=16.5u RS=2.20 BV=30.0 IBV=500n
+ CJO=2.59p M=0.333 N=2.92 TT=1.44n )

*SRC=SDM10M45SD;DI_SDM10M45SD;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc.

Schottky
.MODEL DI_SDM10M45SD D ( IS=290n RS=0.420 BV=45.0 IBV=1.00u
+ CJO=10.6p M=0.333 N=1.28 TT=7.20n )

*SRC=SDM10P45;DI_SDM10P45;Diodes;Si; 45.0V 0.100A 5.00ns Diodes Inc. Schottky

.MODEL DI_SDM10P45 D ( IS=745n RS=0.792 BV=45.0 IBV=1.00u
+ CJO=11.2p M=0.333 N=1.39 TT=7.20n )

*SRC=SDM10U45;DI_SDM10U45;Diodes;Si; 45.0V 0.100A 2.00ns Diodes Inc. SBR/ SKY

.MODEL DI_SDM10U45 D ( IS=7.68u RS=1.32 BV=45.0 IBV=1.00u
+ CJO=13.3p M=0.333 N=1.81 TT=2.88n )

*SRC=SDM10U45LP;DI_SDM10U45LP;Diodes;Si; 40.0V 0.300A 5.00ns Diodes Inc.

Schottky
.MODEL DI_SDM10U45LP D ( IS=26.8u RS=0.140 BV=40.0 IBV=1.00u
+ CJO=10.6p M=0.333 N=2.45 TT=7.20n )

*SRC=SDM20E40C;DI_SDM20E40C;Diodes;Si; 40.0V 0.400A 5.00ns Diodes Inc.

Schottky
.MODEL DI_SDM20E40C D ( IS=3.15u RS=0.165 BV=40.0 IBV=70.0u
+ CJO=39.8p M=0.333 N=1.16 TT=7.20n )

*SRC=SDM20U30;DI_SDM20U30;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc.

Schottky
.MODEL DI_SDM20U30 D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u
+ CJO=19.9p M=0.333 N=0.700 TT=7.20n )

*SRC=SDM20U30LP;DI_SDM20U30LP;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc.

Schottky
.MODEL DI_SDM20U30LP D ( IS=59.4n RS=0.210 BV=30.0 IBV=150u
+ CJO=19.9p M=0.333 N=0.700 TT=7.20n )

*SRC=SDM20U40;DI_SDM20U40;Diodes;Si; 40.0V 0.250A 10.0ns Diodes Inc.

Schottky
.MODEL DI_SDM20U40 D ( IS=4.32u RS=0.168 BV=40.0 IBV=5.00u
+ CJO=39.8p M=0.333 N=1.70 TT=14.4n )

*SRC=SDM6CC;DI_SDM6CC;Diodes;Si; 30.0V 0.200A 1.30ns Diodes INC Schottky Diode

.MODEL DI_SDM6CC D ( IS=2.73u RS=0.653 BV=30.0 IBV=700n
+ CJO=5.30p M=0.333 N=1.98

*SRC=SDMG0340L;DI_SDMG0340L;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc.

.MODEL DI_SBMG0340L D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
+ CJO=2.65p M=0.333 N=2.82 TT=1.44n )

*SRC=SDMG0340LA;DI_SDMG0340LA;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_SBMG0340LA D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
+ CJO=2.65p M=0.333 N=2.82 TT=1.44n )

*SRC=SDMG0340LC;DI_SDMG0340LC;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_SBMG0340LC D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
+ CJO=2.65p M=0.333 N=2.82 TT=1.44n )

*SRC=SDMG0340LS;DI_SDMG0340LS;Diodes;Si; 40.0V 30.0mA 1.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_SBMG0340LS D ( IS=13.9u RS=2.57 BV=40.0 IBV=10.0u
+ CJO=2.65p M=0.333 N=2.82 TT=1.44n )

*SRC=SDMK0340L;DI_SDMK0340L;Diodes;Si; 40.0V 30.0mA 3.00us Diodes Inc.

Schottky Barrier Diode
.MODEL DI_SDMK0340L D ( IS=11.2u RS=3.64 BV=40.0 IBV=500n
+ CJO=2.65p M=0.333 N=2.69 TT=4.32u )
***********************************************************************************
*******************************************

*SRC=SDMP0340LAT;DI_SDMP0340LAT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_SDMP0340LAT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u
+ CJO=2.65p M=0.333 N=2.92 TT=7.20n )
***********************************************************************************
***************************************************************

*SRC=SDMP0340LCT;DI_SDMP0340LCT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_SDMP0340LCT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u
+ CJO=2.65p M=0.333 N=2.92 TT=7.20n )
***********************************************************************************
***************************************************************

*SRC=SDMP0340LST;DI_SDMP0340LST;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc.

Schottky diode, dual, one node of two
.MODEL DI_SDMP0340LST D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u
+ CJO=2.65p M=0.333 N=2.92 TT=7.20n )
***********************************************************************************
***************************************************************
*SRC=SDMP0340LT;DI_SDMP0340LT;Diodes;Si; 40.0V 30.0mA 5.00ns Diodes Inc.
Schottky
.MODEL DI_SDMP0340LT D ( IS=16.5u RS=2.20 BV=40.0 IBV=1.00u
+ CJO=2.65p M=0.333 N=2.92 TT=7.20n )

*
*Zetex ZHCS350 Spice Model v1.0 Last revision 26/04/2005
*
.MODEL ZHCS350 D IS=1.35e-7 N=1.06 ISR=6e-7 NR=1.1 RS=0.9
+IKF=0.2 BV=65 TRS1=6.5e-3 XTI=2 EG=0.63 Fc=0.5 CJO=18.84e-12
+M=0.5 VJ=0.33 TT=1.6e-9
*
*$
*
* (c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL

*
*Zetex ZHCS400 Spice Model v1.0 Last Revised 22/05/02
*
.MODEL ZHCS400 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2
+EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6
+ISR=2.2E-6 NR=1.8
*
*$
*
* (c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL

*
*Zetex ZLLS350 Spice Model v2.0 Last revision 24/05/2007
*
*This simple model has limitations with respect to temperature
*best fit of forward characteristitics with temperature EG=0.63
*best fit of reverse characteristitics with temperature EG=0.85
*
.MODEL ZLLS350 D IS=14E-8 N=1.03 ISR=9E-8 NR=2 IKF=0.043 BV=56 IBV=1E-4
+RS=1.2 TT=1e-9 CJO=13.5E-12 VJ=0.6 M=0.33 EG=0.63 XTI=2 TRS1=4E-3
*
*$
*
* (c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL