Tps 65167 A

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TPS65167

TPS65167A
www.ti.com

SLVS760C APRIL 2007 REVISED MARCH 2008

Compact LCD Bias Supply for TFT-LCD TV Panels


FEATURES

APPLICATIONS

6 V to 14 V Input Voltage Range


Vs Output Voltage Range up to 19 V
Boost Converter With 3.5-A Switch Current
Boost Converter Overvoltage Protection
2.5-A Step-Down Converter With 3.3-V Fixed or
Adjustable Output
750 kHz Fixed Switching Frequency
150 mA Negative Charge Pump Driver for VGL
50 mA Positive Charge Pump for VGH
LDO Controller for Logic Supply
Gate Voltage Shaping for VGH
Temperature Sensor Output
TPS65167 - High Voltage Stress Test Vs
and VGH
TPS65167A - High Voltage Stress Test Vs only
Adjustable Sequencing
Gate Drive Signal for Isolation Switch
Short-Circuit Protection
Internal Soft-start
Thermal Shutdown
Available in 6 6 mm 40 Pin QFN Package
TPS65167

12 V

Boost Converter
High-Voltage Stress Test

Positive Charge Pump


Gate Voltage Shaping

Negative Charge Pump

Temperature Sensor

Vs
15 V/1.7 A

VGH
30 V/50 mA

LCD TV Panel
LCD Monitor

DESCRIPTION
The TPS65167 offers a compact power supply
solution to provide all voltages required by a LCD
panel for large size monitor and TV panel
applications running from a 12-V supply rail.
The device generates all 3 voltage rails for the TFT
LCD bias (Vs, VGL and VGH). In addition to that it
includes a step-down converter and a LDO controller
to provide two logic voltage rails. The device
incorporates a high voltage switch that can be
controlled by a logic signal from the external timing
controller (TCON). This function allows gate voltage
shaping for VGH. The device also features a high
voltage stress test where the output voltage of VGH
is set to typically 30 V and the output voltage of Vs is
programmable to any higher voltage. The high
voltage stress test is enabled by pulling the HVS pin
high. The device consists of a boost converter to
provide the source voltage Vs operating at a fixed
switching frequency of 750 kHz. A fully integrated
positive charge pump, switching automatically
between doubler and tripler mode provides an
adjustable regulated TFT gate on voltage VGH. A
negative charge pump driver provides adjustable
regulated output voltages VGL. To minimize external
components the charge pumps for VGH and VGL
operate at a fixed switching frequency of 1.5 MHz.
The device includes safety features like overvoltage
protection of the boost converter, short-circuit
protection of VGH and VGL as well as thermal
shutdown.

VGL
5 V/150 mA

Vtemp

Buck Converter

Vlogic
3.3 V/2.5 A

LDO Controller

Vaux
1.8 V/500 mA

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.


Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.

Copyright 20072008, Texas Instruments Incorporated

TPS65167
TPS65167A
www.ti.com

SLVS760C APRIL 2007 REVISED MARCH 2008

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION (1)


TA

High voltage Stress Test


(HVS)

ORDERING

Available on Vs and VGH

TPS65167RHAR

Available on Vs only

TPS65167ARHA
R

40C to 85C

(1)
(2)

PACKAGE (2)

PACKAGE
MARKING

40 pin QFN

TPS65167A

TPS65167

The RHA package is available taped and reeled. Add R suffix to the device type (TPS65167RHAR) to
order the device taped and reeled. The RHA package has quantities of 3000 devices per reel.
For the most current package and ordering information, see the Package Option Addendum at the end
of this document, or see the TI website at www.ti.com.

ABSOLUTE MAXIMUM RATINGS


over operating free-air temperature range (unless otherwise noted) (1)
AVIN, VINB, SUPN, GD, BASE

VI

Voltage on pin

(2)

VALUE

UNIT

0.3 to 16.5

EN, HVS, CTRL(2)

0.3 to 6

FB, FBB, FBP, FBN, FBLDO, RSET(2)

0.3 to 6

SW, SUP

25

SWB(2)

20

POUT, VGH, DRN(2)

36

(2)

TJ

Continuous power dissipation

Tstg

Operating junction temperature range

40 to 150

Storage temperature range

65 to 150

(1)
(2)

See Dissipation Rating Table

Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
All voltage values are with respect to network ground terminal.

DISSIPATION RATINGS (1)

(1)

PACKAGE

RJA

TA 25C
POWER RATING

TA = 70C
POWER RATING

TA = 85C
POWER RATING

40 pin QFN

30C/W

3.3 W

1.8 W

1.3 W

See the Texas Instruments Application report SLMA002 regarding thermal characteristics of the PowerPAD package.

RECOMMENDED OPERATING CONDITIONS


over operating free-air temperature range (unless otherwise noted)
MIN

NOM

MAX

UNIT

VI

Input voltage range

14

TA

Operating ambient temperature

40

85

TJ

Operating junction temperature

40

125

CREG

REGOUT bypass capacitor

4.7

CREF

Reference (REF) bypass capacitor

100

nF

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Copyright 20072008, Texas Instruments Incorporated

Product Folder Link(s): TPS65167 TPS65167A

TPS65167
TPS65167A
www.ti.com

SLVS760C APRIL 2007 REVISED MARCH 2008

ELECTRICAL CHARACTERISTICS
AVIN=VINB=SUPN=12V, EN=REGOUT, Vs = 15V, Vlogic = 3.3V , Vaux = 1.8V, TA = 40C to 85C, typical values are at
TA = 25C (unless otherwise noted)
PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

SUPPLY CURRENT
VI
IQ

UVLO

Input voltage range

14

Quiescent current into AVIN

Not switching, FB = FB + 5%

Quiescent current into VINB


Quiescent current into SUP
Undervoltage lockout threshold

VI falling

4.7

5.2

5.7

Undervoltage lockout threshold

VI rising

4.9

5.45

5.9

1.5

mA

Not switching, FBB = FBB + 5%

0.15

mA

Not switching, FB = FBB = FBN = FBP = + 5%

275

Thermal shutdown
Thermal shutdown hysteresis

A
V
V

155

REFERENCE VOLTAGE REF


Vref

VI = 6 V to 14 V, Iref = 10 A

Reference voltage

1.205

1.213

1.219

LOGIC SIGNALS CTRL, HVS


VIH

High level input voltage

6 V VIN 14 V

VIL

Low level input voltage

6 V VIN 14 V

Ilkg

Input leakage current

EN = CTRL = HVS = GND or 6 V

1.4

V
0.4

0.01

0.1

4.8

6.2

SEQUENCING GDLY/EN
EN/GDLY Charge current

V(threshold) = 1.213 V

3.6

EN/GDLY threshold
EN/GDLY pulldown resistor

1.23

4.5

SWITCHING FREQUENCY
fs

Switching frequency

600

750

900

kHz

4.6

4.8

19

1.136

1.146

1.154

10

100

nA

REGULATOR REGOUT
VO

Regulator output voltage

Ireg = 1 mA

BOOST CONVERTER (Vs)


VO

Output voltage range

VFB

Feedback regulation voltage

IFB

Feedback input bias current

RDS(on)

N-MOSFET on-resistance (Q1)

I(SW) = 500 mA

160

270

P-MOSFET on-resistance (Q2)

I(SW) = 200 mA

14

20

IMAX

Maximum P-MOSFET peak switch current

ILIM

N-MOSFET switch current limit (Q1)

Ilkg

Switch leakage current

V(SW) = 15 V

Line Regulation

6 V Vin 14 V, IO = 2 mA

Load Regulation

2 mA Iout 1.8 A

3.5

4.2

4.9

10

0.006

%/V

0.06

%/A

BOOST CONVERTER (Vs) OVERVOLTAGE PROTECTION


Switch overvoltage protection

Vs rising

19.5

Switch overvoltage protection hysteresis

20.2

21

0.6

V
V

GATE DRIVE (GD) AND BOOST CONVERTER PROTECTION


I(GD)

Gate drive sink current

R(GD)

Gate drive internal pull up resistance

ton

Gate on time during short-circuit

toff

Gate off time during short-circuit

Vs < 4.8 V

ms

Vs < 4.8 V

60

ms

EN = high

TEMPERATURE SENSOR (TEMP)


VO

Output voltage range

1.2

Drive current
VO

TA = 85C, I = 200 A, device not switching,


FB = FBnominal + 5%

Output voltage at TA = 85C


Temperature accuracy

V
A

2.037
6

Temperature coefficient

2.5
200

V
6

5.7

Copyright 20072008, Texas Instruments Incorporated

Product Folder Link(s): TPS65167 TPS65167A

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C
mV/C

TPS65167
TPS65167A
www.ti.com

SLVS760C APRIL 2007 REVISED MARCH 2008

ELECTRICAL CHARACTERISTICS (continued)


AVIN=VINB=SUPN=12V, EN=REGOUT, Vs = 15V, Vlogic = 3.3V , Vaux = 1.8V, TA = 40C to 85C, typical values are at
TA = 25C (unless otherwise noted)
PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

STEP-DOWN CONVERTER (Vlogic)


Output voltage range

3.3V fixed output voltage accuracy

FBB = GND

2%

3.3

2%

VFB

Feedback regulation voltage

FBB connected to resistor divider,

2%

1.213

2%

IFB

Feedback input bias current

10

100

nA

RDS(on)

N-MOSFET on-resistance (Q1)

200

330

ILIM

N-MOSFET switch current limit (Q1)

3.5

4.2

Ilkg

Switch leakage current

V(SW) = 0 V

10

Line regulation

6 V Vin 14 V, IO = 1.8 mA

Load regulation

1.8 mA IO 2.5 A

VO

1.5

I(SW) = 500 mA
2.8

0.006

%/V

0.06

%/A

STEP-DOWN CONVERTER FEEDBACK SELECT THRESHOLD FBB


VFB

Feedback select threshold

Adjustable version select

0.25

14

NEGATIVE CHARGE PUMP VGL


VI

Input supply range

VO

Output voltage range

VFB

Feedback regulation voltage

IFB

Feedback input bias current

RDS(on)

Q4 P-Channel switch RDS(on)


Current source voltage drop (1)

36

36

mV

10

100

nA

IO = 20 mA

4.4

I(DRVN) = 50 mA, V(FBN) = V(FBNnominal) 5%

120

I(DRVN) = 100 mA, V(FBN) = V(FBNnominal) 5%

235

mV

Line regulation

9.5 V Vin 14 V, IO = 1 mA

0.098

%/V

Load regulation

1 mA IO 100 mA, VGL = 5 V

0.055

%/mA

POSITIVE CHARGE PUMP (POUT)


VO

Output voltage range

VFB

Feedback regulation voltage

IFB

Feedback input bias current

30
CTRL = GND, VGH = open

1.187

Doubler Mode (x2); I(POUT) = 20 mA


Effective output resistance

1.238

10

100

nA

98

Doubler Mode (x2); I(POUT) = 50 mA

63

Tripler Mode (x3); I(POUT) = 20 mA

143

Tripler Mode (x3); I(POUT) = 50 mA


Load regulation

1.214

91

1 mA Iout 51 mA, VGH = 23.9 V

0.0022

%/mA

HIGH VOLTAGE SWITCH VGH


RDS(on)
I(DRN)

POUT to VGH RDS(on)

CTRL = high, POUT = 27 V, I = 20 mA

10

18

DRN to VGH RDS(on)

CTRL = low, V(DRN) = 5 V, I = 20 mA

40

60

DRN input current

CTRL = low, V(DRN) = 10 V

tdly

CTRL to VGH propagation delay

R(VGH)

VGH pull down resistance

10

CTRL = high to low, POUT = 27 V, V(DRN) = GND

120

CTRL= low to high, POUT = 27 V, V(DRN) = GND

140

EN = low, I = 20 mA

ns

LINEAR REGULATOR CONTROLLER Vaux


VEB

Emitter voltage range

VFB

Feedback regulation voltage

I(BASE)

Base sink current

2.3
2%
V(BASE) = 3.3 V-1V, VFBLDO = 1.15 V

25

V(BASE) = 2.5 V-1V, VFBLDO = 1.15 V

15

Power supply rejection ratio

LDO input

Line regulation

6V Vin 14 V, I(load) = 1 mA,


Vaux = 1.6 V

Load regulation

1 mA IO 500 mA, VI = 3.3 V,


Vaux = 1.6 V

15
1.213

2%
mA

65

dB

0.007

%/V

0.48

%/A

HIGH VOLTAGE STRESS TEST (HVS), RHVS

(1)
4

The maximum charge pump output current is half the drive current of the internal current source or sink
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Copyright 20072008, Texas Instruments Incorporated

Product Folder Link(s): TPS65167 TPS65167A

TPS65167
TPS65167A
www.ti.com

SLVS760C APRIL 2007 REVISED MARCH 2008

ELECTRICAL CHARACTERISTICS (continued)


AVIN=VINB=SUPN=12V, EN=REGOUT, Vs = 15V, Vlogic = 3.3V , Vaux = 1.8V, TA = 40C to 85C, typical values are at
TA = 25C (unless otherwise noted)
PARAMETER

37

36

35

TEMP

38

PGND

39

33

32

31

SW

40

PGND

TPS65167A, TPS65167, HVS = low, V(RHVS) = 5 V

SW

RHVS leakage current

GD

TPS65167A, TPS65167, HVS = high, I(HVS) = 100 A

GND

RHVS pull down resistance

AVIN

TPS65167, HVS = high

FBLDO

34

MIN

TYP

MAX

29

30

31

450

650

850

100

nA

VINB

30

COMP

BOOT

29

FB

SWB

28

RHVS

SWB

27

HVS

PGND

26

EN

PGND

25

GDLY

VLOGIC

24

CTRL

FBB

23

DRN

REGOUT

22

VGH

21

POUT

18

19

UNIT

20

FBP

17

SUP

16

C2N

15

C2P

14

C1N

SUPN

13

C1P

12

GND

10
11

FBN

REF

Exposed
Thermal Die
(See NOTE)

DRVN

Ilkg

TEST CONDITIONS

Positive charge pump output voltage

BASE

V(POUT)

NOTE: The thermally enhance PowerPAD is connected to GND.

TERMINAL FUNCTIONS
TERMINAL
NAME

NO.

I/O

DESCRIPTION

VINB

Power input for the buck converter.

BOOT

This pin generates the gate drive voltage for the Buck converter. Connect a 100 nF from this pin to the
switch pin of the step-down converter SWB.

SWB

3, 4

Switch pin of the step-down converter

PGND

Power ground for the step-down converter

PGND

Power ground for the negative charge pump

VLOGIC

Output sense of the step-down converter

FBB

Feedback pin of the step-down converter

REGOUT

Output of the internal 5V regulator. Connect a 4.7 F bypass capacitor to this pin.

REF

10

Internal reference output typically 1.213 V. Connect a 100 nF bypass capacitor to this pin.

FBN

11

Feedback pin of negative charge pump

SUPN

12

Power supply pin for the negative charge pump driver.

Copyright 20072008, Texas Instruments Incorporated

Product Folder Link(s): TPS65167 TPS65167A

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TPS65167A
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SLVS760C APRIL 2007 REVISED MARCH 2008

TERMINAL FUNCTIONS (continued)


TERMINAL

I/O

DESCRIPTION

NAME

NO.

DRVN

13

GND

14

Power ground for the positive charge pump

C1P

15

Positive charge pump flying capacitor

C1N

16

Positive charge pump flying capacitor

C2P

17

Positive charge pump flying capacitor

C2N

18

Positive charge pump flying capacitor

SUP

19

FBP

20

Feedback of the positive charge pump

POUT

21

Output of the positive charge pump converter

VGH

22

Output of the high voltage switch and gate shaping function block

DRN

23

Termination of the low side switch of the gate voltage shaping block

CTRL

24

Control input for the gate voltage shaping block. Connect this pin to REGOUT if the gate voltage shaping
function is not used.

GDLY

25

Connecting a capacitor from this pin to GND allows to set the delay time between the boost converter Vs
and VGH. Note that VGH is controlled by CTRL as well.

EN

26

This is the enable pin of the boost converter Vs, negative charge pump VGL and positive charge pump
POUT. This pin is a dual function pin. EN can be held high if no start-up delay is desired or a capacitor can
be connected to this pin. The capacitor determines the start-up delay time.

HVS

27

Logic control input to force the device into High Voltage Stress Test. With HVS = low the high voltage stress
test disabled. With the TPS65167 and HVS = high the high voltage stress test is enabled for Vs and for
VGH. With the TPS65167A and HVS = high the high voltage stress test is enabled for Vs only.

RHVS

28

I/O

This resistor sets the voltage of the boost converter Vs when the High Voltage Stress test is enabled. (HVS
= high). With HVS = high the RHVS pin is pulled to GND which sets the voltage for the boost converter
during High Voltage Stress. When HVS is disabled (HVS = low) the RHVS pin is high impedance.

FB

29

COMP

30

I/O

Compensation for the regulation loop of the boost converter generating Vs. Typically a 22 nF compensation
capacitor is connected to this pin.

TEMP

31

This is the output of the internal device temperature sensor. The output voltage is proportional to the chip
temperature.

PGND

32, 33

SW

34, 35

I/O

Switch pin of the boost converter generating Vs

GD

36

I/O

Gate drive. This pin controls the external isolation MOSFET.

GND

37

AVIN

38

Analog input voltage of the device. Bypass this pin with a 0.47 F bypass capacitor.

FBLDO

39

Feedback of the LDO controller

BASE

40

I/O

PowerPAD

I/O

I/O

Drive pin of the negative charge pump.

Power supply pin of the positive charge pump and control voltage for the boost regulator Vs. Connect this
pin with a short and wide PCB trace to the output of the boots converter

Feedback of the boost converter Vs

Power Ground for the boost converter Vs

Analog Ground for the internal reference

BASE drive of the external PNP transistor


Analog GND for the internal reference

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Product Folder Link(s): TPS65167 TPS65167A

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TPS65167A
www.ti.com

SLVS760C APRIL 2007 REVISED MARCH 2008

FUNCTIONAL BLOCK DIAGRAM


Temperature
Output
C27
1nF
L1
10uH

1
C2
1uF

38
5
26
C11
4.7uF

SW

SUPN

SUP
Boost Converter

VINB

Positive Charge
Pump
x2 and x3 Mode

C13
10nF

C2N

REGOUT
Gate Voltage
Shaping

HVS

24 CTRL

11

VINB

Step Down
Converter

FBN

10

14

37

PGND
6

32

33

20

C9
0.33 uF

17

C10
1uF

18

DRN

23

Vlogic

BOOT

SWB

SWB

FBLDO

R4
300kW

21

22

FBB

PGND

C1P
C1N

C29
22 uF

R3
82kW

28

VGH

15

GND

C20
0.33uF

16
R8
39kW

DRVN Negative Charge SUPN


Pump Driver

BASE

D4
R7
160kW

13

PGND

C15
0.33uF

GND

C16
2.2uF

D3

REF

VGL
-5V/150 mA

FBP

C2P

EN

25 GDLY
27

C8
47 pF

R2
30kW

29

POUT

PGND

COMP

R1
365kW

C7
22 uF

FB

RHVS

D
AVIN

C6
22 uF

19

31

SUP

34

TEMP

35

9
C12
22nF 30

R6
0W

GD

12

Vin
6V to 14 V

Vs
15 V/1.5A
C5
1uF

C4
22 uF

C28
10uF

36

C25
470 nF

C1
22 uF

C3
10uF

SW

C24
1nF

D1

C26
100 pF

R5
16kW
VGH
23 V/
50 mA

C14
100nF
L2
10 uH

Vlogic
3.3V/
2.5A

D2
C19
22 uF

C18
22 uF

8
39

40
Vaux
1.5V/500mA

Q1

C21
100nF
C22
1uF

R11
1.6kW
R13
1kW

C23
10uF

R12
6.8kW

Copyright 20072008, Texas Instruments Incorporated

Product Folder Link(s): TPS65167 TPS65167A

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TPS65167A
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SLVS760C APRIL 2007 REVISED MARCH 2008

TYPICAL CHARACTERISTICS
Table 1. Table of Graphs
FIGURE
Main Boost Converter (Vs)

Efficiency boost converter

vs Load currents

Figure 1

Softstart boost converter

vs Load currents

Figure 2

PWM operation

at nominal load current

Figure 3

PWM operation

at light load current

Figure 4

Overvoltage protection

Figure 5

Short-circuit power down cycling

Figure 6

Load transient response boost converter

Figure 7

Step-Down Converter (Vlogic)

Efficiency buck converter

vs Load currents

Figure 8

PWM operation

at nominal load current

Figure 9

PWM operation

at light load current

Figure 10

Softstart buck converter

Figure 11

Load transient response buck converter

Figure 12

LDO Controller
Vaux

Load transient response LDO controller

Figure 13

Negative Charge Pump Driver


VGL

vs Load current - doubler stage

Figure 14

vs Load current

Figure 15

vs Temperature

Figure 16

Positive Charge Pump Driver


VGH
Temperature Sensor
VTemp
System Performance
Gate voltage shaping VGH

Figure 17

Power up sequencing

EN connected to REGOUT

Figure 18

Power up sequencing

External capacitor connected to EN

Figure 19

Power up sequencing

REGOUT vs VREF

Figure 20

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TPS65167A
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SLVS760C APRIL 2007 REVISED MARCH 2008

EFFICIENCY BOOST CONVERTER (Vs)


vs
LOAD CURRENT

SOFTSTART BOOST CONVERTER (Vs)


vs
LOAD CURRENT

100
Vsw

90

Efficiency - %

80

Vout

VIN

70

60
VI = 12 V,
VO = 15 V

50

Input Current

40
0

500

1000

1500

VI = 12 V,
VO = 15 V,
IO = 500 mA

2000

IO - Output Current - mA

Figure 1.

Figure 2.

PWM OPERATION AT NOMINAL LOAD CURRENT

PWM OPERATION AT LIGHT LOAD CURRENT

Vsw

Vsw

Vout

Vout

VI = 12 V,
VO = 15 V/50 mA

Inductor Current

Inductor Current

VI = 12 V,
VO = 15 V/1A

Figure 3.

Figure 4.

Copyright 20072008, Texas Instruments Incorporated

Product Folder Link(s): TPS65167 TPS65167A

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SLVS760C APRIL 2007 REVISED MARCH 2008

OVER VOLTAGE PROTECTION

SHORT-CIRCUIT POWER DOWN CYCLING

Vsw

Vout

VI = 15 V,
VO = shorted to GND,
Peak current depends mainly
on input power supply

VI = 15 V,
VO = 15 V/500 mA
VOUT with 15 V Offset

Vout
Vsw

Input Current

Figure 5.

Figure 6.

LOAD TRANSIENT RESPONSE BOOST CONVERTER

EFFICIENCY BUCK CONVERTER


vs
LOAD CURRENT
90
VI = 12 V,
VO = 3.3 V

85
Vout

VI = 12 V,
VS = 15 V,
560 mA to 1.46 A
Output Current

Efficiency - %

80
75
70
65
60
55
50
0

1500
500
1000
IO - Output Current - mA

Figure 7.

10

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2000

Figure 8.

Copyright 20072008, Texas Instruments Incorporated

Product Folder Link(s): TPS65167 TPS65167A

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TPS65167A
www.ti.com

SLVS760C APRIL 2007 REVISED MARCH 2008

PWM OPERATION AT NOMINAL LOAD CURRENT

PWM OPERATION AT LIGHT LOAD CURRENT

Vsw

Vsw

Vout

Vout

Inductor Current

Inductor Current

VI = 12 V,
VO = 3.3 V/50 mA

VI = 12 V,
VO = 3.3 V/2.5 A

Figure 9.

Figure 10.

SOFTSTART BUCK CONVERTER Vlogic

LOAD TRANSIENT RESPONSE BUCK CONVERTER

Vout

Vsw

Vout
VI = 12 V,
VS = 3.3 V,
3.3 V fixed output voltage
136 mA to 1.8 A

VIN

Input Current
Output Current

VI = 12 V,
VO = 3.3 V fixed,
IO = 500 mA

Figure 11.

Figure 12.

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LOAD TRANSIENT RESPONSE LDO CONTROLLER

VGL vs LOAD CURRENT

-4.3
VGL = -5 V,
VIN = 7 V,
VIN = 7.5 V,
VIN = 8 V

-4.4
Vaux

-4.5
-4.6

Cout = 22 mF,
50 mA to 530 mA

Increasing VIN

-4.7
VGL - V

VI = 12 V,
VS = 1.6 V,

Output Current

-4.8
-4.9
-5
-5.1
-5.2
0.091

0.081

0.071

0.061

0.051

0.041

0.031

0.021

0.011

0.001

-5.3

IO - Output Current - A
Figure 13.

Figure 14.

VGH vs LOAD CURRENT DOUBLER STAGE

Vtemp vs TEMPERATURE
2.4

24
VS = 15 V,
VGH = 24 V

23.8

2.3
2.2

23.6

23.2

TA = 85C

23
TA = 25C

22.8

Vtemp - V

VGH - V

Itemp = 200 mA,


All Outputs no Load

2.1

TA = -40C

23.4

VI = 12 V,

1.9
1.8
1.7
1.6

22.6

1.5
22.4

1.4

22.2

1.3

22
0

0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1
IO - Output Current - A

1.2
-40

-20

0
20
40 60
80 100 120
TA - Free-Air Temperature - C

Figure 15.

12

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140

Figure 16.

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GATE VOLTAGE SHAPING VGH


CTRL

POWER-UP SEQUENCING
Vlogic

Vaux

VI = 12 V,
GDLY = 10 nF
EN = REGOUT
Vs

VGH

VGH

VGL

DRN = 10 kW to VS,
VGH = 470 pF Capacitive Load
to Represent Panel

1 ms/div

4 ms/div
Figure 17.

Figure 18.

POWER-UP SEQUENCING

POWER-UP SEQUENCING
REGOUT vs VREF

VI = 12 V,
GDLY = 10 nF,
EN = 22 nF to GND

Vlogic

CTRL

Vaux

VGH
Vs

VGH

VGL

200 ms/div

2 ms/div
Figure 19.

Figure 20.

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APPLICATION INFORMATION
TEMP

200 mA

AVIN
Temperature
Sensor
Vref
1.213V

UVLO
Undervoltage
lockout
5.35V typ

Regulator
4.8V typ

REGOUT

Start Buck Converter

GND
Thermal
Shutdown latch
155oC typ

30 mA

Start LDO Controller

REF

Control
Start negative
charge pump

EN

Ichg

Vref

EN
AVIN
3.5k

Start Boost
converter, and
positive charge

5k

EN

VREF
Power Good
Buck Converter

GD
Idischg
Control
EN

Ichg
GDLY

Vref

FBB

Control
Power Good
Boost Converter

FB

Enable Gate voltage


shaping block

3.5k
EN

Figure 21. Control Block TPS65167

Regulator REGOUT and Reference REF


The 4.8 V regulator REGOUT and reference REF is always on as long as the input voltage is above the device
undervoltage lockout of typically 5.2 V. To ensure a correct start-up, the reference voltage REF needs to come
up faster than the regulator voltage REGOUT. In other words as REF = 1.213 V then REGOUT must remain
< 4.25 V to assure proper start-up (Figure 22).

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CTRL

VGH

200 ms/div

Figure 22. Power-up Sequencing (REGOUT vs VREF)


This is implemented by connecting a 4.7 F bypass capacitor to REGOUT and a 100 nF bypass capacitor to the
REF pin. If the bypass capacitor on the REF pin is selected larger than 100 nF, then the bypass capacitor on
REGOUT needs to be increased accordingly. Refer to Table 2 to properly select a bypass capacitor.
The REF pin provides a reference output which is used to regulate the negative charge pump. In order to have a
stable reference voltage, a 100 nF bypass capacitor is required, which needs to be connected directly from REF
to GND (pin 37) for best noise immunity. The reference output has a current capability of 30 A which must not
be exceeded. Therefore, the feedback resistor value from FBN to REF must not be smaller than 40 k.
Table 2. Bypass Capacitor Selection
REGOUT

Type/Rating

REF

Type

Option 1

4.7 F

Option 2

10 F

X7R or X5R/10V

100 nF

x7R or X5R

X7R or X5R/10V

220 nF or 100 nF

x7R or X5R

Temperature Sensor Output TEMP


The device provides a temperature sensor output measuring the actual chip temperature. This pin has an analog
output capable of driving 200 A. The TEMP pin requires a 1 nF output capacitor to provide a stable output
voltage. At 85C, the typical output voltage is 2.037 V with a temperature coefficient of 5.9 mV/C. See Figure 16
for the output characteristic of the temperature output.

Thermal Shutdown
A thermal shutdown is implemented to prevent damages due to excessive die temperatures. Once the thermal
shutdown is exceeded, the device enters shutdown. The device can be enabled again by cycling the EN pin or
input voltage to ground.

Undervoltage Lockout
To avoid mis-operation of the device at low input voltages an undervoltage lockout is included which shuts down
the device at voltages lower than 5.2 V.

Short circuit protection (all outputs)


All the outputs have a short circuit protection implemented.
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Boost converter Vs: A short circuit is detected when the voltage on SUP, that is connected to the output falls
typically below 4.5V. Then the isolation switch is opened by pulling GD high. After a delay of typically 60mS the
isolation switch is closed again and restarts the output automatically. See Figure 6.
Buck converter Vlogic: During a short circuit even the output current is typically limited to the buck converter
switch current limit of 3.5A and the switching frequency is reduced.
Negative charge pump VGL: As the output falls below the power good limit threshold the output current is limited
to the softstart current limit of the negative charge pump.
Positive charge pump output VGH: As the output POUT falls below its power good threshold then the internal
gate voltage shaping switch opens disconnecting the load from POUT. As the output POUT exceeds the power
good threshold again the internal switch of the gate voltage shaping block is closed again. The VGH output
cycles as long as the short circuit event remains.
LDO controller VAUX: During a short circuit event the maximum output current is given by the gain of the
external transistor. Depending on the selected output transistor the power dissipation of the external transistor
might be exceeded during a short circuit event. Using a base series resistor protects the IC during a short circuit
event.

Start-Up Sequencing
The device has an adjustable start-up sequencing to provide correct sequencing as required by LCD. When the
input voltage exceeds the undervoltage lockout threshold, then the step-down converter and LDO controller
start-up at the same time. As the enable signal (EN) goes high, the negative charge pump starts up followed by
the boost converter Vs starting at the same time as the positive charge pump. See the typical curves shown in
Figure 18, Figure 19, and Figure 23.

AVIN =UVLOVhys

AVIN = UVLO
VIN
VLOGIC
Vaux
td
VGH

EN

with CTRL=high
POUT

Vs

VGL
GDLY

GD

Figure 23. Power Up Sequencing

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Enable EN
The enable is a dual function pin. It can be used as a standard enable pin that enables the device once it is
pulled high by a logic signal or connected to the REGOUT pin.
The enable can not be connected directly to Vin due to its maximum voltage rating!
If no logic control signal is available, it is also possible to connect a capacitor to this pin to set the delay time td
as shown in Figure 23 and Figure 19.

Delay GDLY
The capacitor connected to GDLY sets the delay time from the point when the boost converter Vs reaches its
nominal value to the enable of the gate voltage shaping block.

Setting the Delay Times GDLY, EN delay


Connecting an external capacitor to the GDLY and EN pin sets the delay time. To set the delay time, the external
capacitor is charged with a constant current source of typically 5 A. The delay time is terminated when the
capacitor voltage has reached the threshold voltage of Vth = 1.230 V. The external delay capacitor is calculated:
5 mA x td
5 mA x td
Cdly =
=
Vref
1.23 V
(1)
with td = Desired delay time
Example for setting a delay time of 2.3 mS
5 mA x 2.3 ms
Cdly =
= 9.3 nF Cdly = 10 nF
1.23 V

(2)

Boost Converter
The main boost converter operates in Pulse Width Modulation (PWM) and at a fixed switching frequency of 750
kHz The converter uses a unique fast response, voltage-mode controller scheme with feed-forward input voltage
. This achieves excellent line and load regulation (0.2% A load regulation typical) and allows the use of small
external components. To add higher flexibility to the selection of external component values the device uses
external loop compensation. Although the boost converter looks like a non-synchronous boost converter topology
operating in discontinuous conduction mode at light load, the device will maintain continuous conduction even at
light load currents. This is achieved with a novel architecture using an external Schottky diode with an integrated
MOSFET in parallel connected between SW and SUP. See the Functional Block Diagram. The intention of this
MOSFET is to allow the current to go below ground that occurs at light load conditions. For this purpose, a small
integrated P-Channel MOSFET with typically 10 RDS(on) is sufficient. When the inductor current is positive, the
external Schottky diode with the lower forward voltage will carry the current. This causes the converter to operate
with a fixed frequency in continuous conduction mode over the entire load current range. This avoids the ringing
on the switch pin as seen with standard non-synchronous boost converter, and allows a simpler compensation
for the boost converter.

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AVIN

GD

5 kW

IDLY

SW

SW

IDLY

Softstart

Vref

M2

SS
750kHz
Oszillator

70 W

SUP

Current limit
and
Soft Start

EN

Comparator

Control Logic
M1

COMP
GM Amplifier

PGND
Sawtooth
Generator

FB
VFB
1.154V
GM Amplifier
Low Gain

Overvoltage
Comparator
OVP

PGND

Vref

SUP

VFB
1.154
RHVS
HVS

Figure 24. Block Diagram Boost Converter

Softstart (Boost Converter)


The main boost converter has an internal softstart to prevent high inrush current during start-up. The device
incorporates a digital softstart increasing the current limit in digital current limit steps. See Figure 2 for the typical
softstart timing.

High Voltage Stress Test (Boost converter and positive charge pump)
The TPS65167 and TPS65167A incorporates a high voltage stress test where the output voltage of the boost
converter Vs and the positive charge pump POUT is set to a higher voltage compared to the nominal
programmed output voltage. The High Voltage Stress test is enabled by pulling the HVS pin to high. With HVS =
high, the voltage on POUT, respectively VGH, remains unchanged with the TPS65167A and the TPS65167
regulates to a fixed output voltage of 30 V. The boost converter Vs is programmed to a higher voltage
determined by the resistor connected to RHVS. With HVS = high the RHVS pin is pulled to GND which sets the
voltage for the boost converter during the High Voltage Stress Test. The output voltage for the boost converter
during high voltage stress test is calculated as:
R1 + R2//R3
R1 + R2//R3
VsHVS = VFB
= 1.146V
R2//R3
R2//R3
R3 =

18

R1 x R2
VsHSV

- 1 x R2 - R1

V
FB

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With:
VsHVS = Boost converter output voltage with HVS = high
VFB = 1.146 V

Overvoltage Protection
The main boost converter has an overvoltage protection of the main switch M1 if the feedback pin (FB) is floating
or shorted to GND causing the output voltage to rise. In such an event, the output voltage is monitored with the
overvoltage protection comparator on the SUP pin. As soon as the comparator trips at typically at 20 V then the
boost converter stops switching. The output voltage will fall below the overvoltage threshold and the converter
continues to operate. See Figure 4.
Note: During high voltage stress test the overvoltage protection is disabled.

Input Capacitor Selection VINB, SUP, SUPN, AVIN, Inductor Input Terminal
For good input voltage filtering, low ESR ceramic capacitors are recommended. The TPS65167 has an analog
input AVIN as well as a power supply input SUP powering all the internal rails. A 1-F bypass capacitor is
required as close as possible from AVIN to GND as well as from SUP to GND. The SUPN pin needs to be
bypassed with a 470-nF capacitor. Depending on the overall load current two or three 22-F input capacitors are
required. For better input voltage filtering, the input capacitor values can be increased. To reduce the power
losses across the external isolation switch a filter capacitance at the input terminal of the inductor is required. To
minimize possible audible noise problems, two 10-F capacitors in parallel are recommended. More capacitance
will further reduce the ripple current across the isolation switch. See Table 3 and the typical applications for input
capacitor recommendations.
Table 3. Input Capacitor Selection
CAPACITOR

COMPONENT SUPPLIER

COMMENTS

22 F/16 V

Taiyo Yuden EMK316BJ226ML

Pin VINB

2 10 F/25 V

Taiyo Yuden TMK316BJ106KL

Pin VINB (alternative)

2 10 F/25 V

Taiyo Yuden TMK316BJ106KL

Inductor input terminal

1 F/35 V

Taiyo Yuden GMK107BJ105KA

Pin SUP

1 F/25 V

Taiyo Yuden TMK107BJ105KA

Pin AVIN

470 nF/25 V

Taiyo Yuden TMK107BJ474MA

Pin SUPN

Boost Converter Design Procedure


The first step in the design procedure is to verify whether the maximum possible output current of the boost
converter supports the specific application requirements. To simplify the calculation, the fastest approach is to
estimate the converter efficiency by taking the efficiency numbers from the provided efficiency curves or to use a
worst case assumption for the expected efficiency, e.g., 80%. With the efficiency number it is possible to
calculate the steady state values of the application.
Vin h
D +1*
Vout
1. Converter Duty Cycle:

Iout + Isw * Vin D


2 s L
2. Maximum output current:
I
I swpeak + Vin D ) out
2
s
L
1
*D
3. Peak switch current:

(1 * D)

With Isw = converter switch current (minimum switch current limit = 3.5 A)
fs = converter switching frequency (typical 750 kHz)
L = Selected inductor value
= Estimated converter efficiency (use the number from the efficiency curves or 0.8 as an estimation)

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The peak switch current is the steady state peak switch current the integrated switch, inductor and external
Schottky diode has to be able to handle. The calculation must be done for the minimum input voltage where the
peak switch current is highest. Note that the maximum output power of the device is limited by the power
dissipation of the package.
Inductor Selection (Boost Converter)
The TPS65167 typically operates with a 10-H inductor. Main parameter for the inductor selection is the
saturation current of the inductor which should be higher than the peak switch current as calculated above with
additional margin to cover for heavy load transients. The alternative more conservative approach is to choose the
inductor with saturation current at least as high as the minimum switch current limit of 3.5 A. The second
important parameter is the inductor dc resistance. The lower the dc resistance the higher the efficiency of the
converter. The converter efficiency can vary between 2% to 10% when choosing different inductors. Possible
inductors are shown in Table 4.
Table 4. Inductor Selection Boost Converter
INDUCTOR VALUE

COMPONENT SUPPLIER

DIMENSIONS in mm

Isat/DCR

10 H

Sumida CDRH8D43-100

8.3 8.3 4.5

4 A/29 m

10 H

Wuerth 744066100

10 10 3.8

4 A/25 m

10 H

Coilcraft DO3316P-103

12.95 9.4 5.5

3.9 A/38 m

Output Capacitor Selection (Boost Converter)


For best output voltage filtering, a low ESR output capacitor is recommended. Ceramic capacitors have a low
ESR value and work best with the TPS65167. Three 22-F or six 10-F ceramic output capacitors in parallel are
sufficient for most applications. More capacitors can be added to improve the load transient regulation. See
Table 5 for the selection of the output capacitor.
Table 5. Output Capacitor Selection
CAPACITOR

COMPONENT SUPPLIER

6 10 F/25 V

Taiyo Yuden TMK316BJ106KL

3 22 F/25 V

TDK C4532X7R1E226M

COMMENTS
Alternative solution

Rectifier Diode Selection (Boost Converter)


To achieve high efficiency, a Schottky diode should be used. The reverse voltage rating should be higher than
the maximum output voltage of the converter. The current rating for the Schottky diode is calculated as the off
time of the converter times the peak switch current of the application. The minimum switch current of the
converter can be used as a worst case calculation.
Vin
Iavg = (1 - D ) x Isw =
x 3.5 A
Vout
with Isw=minimum switch current of the TPS65167 (3.5 A)
Usually a Schottky diode with 2 A maximum average rectified forward current rating is sufficient for most of the
applications. Secondly, the Schottky rectifier has to be able to dissipate the power. The dissipated power is the
average rectified forward current times the diode forward voltage.
P D + I avg VF + Isw (1 * D) VF + I sw + Vin
VF
Vout
with Isw = minimum switch current of 3.5 A
(worst case calculation)
Table 6. Rectifier Diode Selection (Boost Converter)

20

Avg.

Or

Vforward

RJA

SIZE

COMPONENT SUPPLIER

3A

20 V

0.36 at 3 A

46C/W

S.C.

MBRS320, International Rectifier

2A

20 V

0.44 V at 2 A

75C/W

SMB

SL22, Vishay Semiconductor

2A

20 V

0.5 at 2 A

75C/W

SMB

SS22, Fairchild Semiconductor

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Setting the Output Voltage and Selecting the Feed-forward Capacitor (Boost Converter)
The output voltage is set by the external resistor divider and is calculated as:

V out + 1.146 V

1 ) R1

R2

(4)

Across the upper resistor a bypass capacitor is required to speed up the circuit during load transients. The
capacitor is calculated as:
1
1
C8 +
+
2 p z R1
2 p 10000 R1
(5)
A value coming closest to the calculated value should be used.

Compensation (COMP)
The regulator loop can be compensated by adjusting the external components connected to the COMP pin. The
COMP pin is the output of the internal transconductance error amplifier. A single capacitor connected to this pin
sets the low frequency gain. A 22-nF capacitor is sufficient for most of the applications. Adding a series resistor
sets an additional zero and increases the high frequency gain. The formula below calculates at what frequency
the resistor will increase the high frequency gain.
1
z +
2 p C12 R6
(6)
Lower input voltages require a higher gain and; therefore, a lower compensation capacitor value. See the typical
applications for the appropriate component selection.

Gate Drive Pin (GD) and Isolation Switch Selection


The external isolation switch disconnects the output of the boost converter once the device is turned off. The
external isolation switch also provides a short-circuit protection of Vs by turning off the switch in case of a
short-circuit. The Gate Drive (GD) allows control of an external isolation MOSFET switch. GD pin is pulled low
when the input voltage is above the undervoltage lockout threshold (UVLO) and when enable (EN) is high. The
gate drive has an internal pull up resistor to AVIN of typically 5 k. In order to minimize inrush current during
start-up, the gate drive pin is pulled low by an internal 10A current sink. To further reduce this inrush current,
typically a 1-nF capacitor can be connected from pin GD to the boost converter inductor. A standard P-Channel
MOSFET with a current rating close to the minimum boost converter switch current limit of 3.5 A is sufficient.
Table 7 shows two examples coming in a small SOT23 package. The worst case power dissipation of the
isolation switch is calculated as the minimum switch current limit RDS(on) of the MOSFET. A standard SOT23
package or similar is able to provide sufficient power dissipation.
Table 7. Isolation Switch Selection
COMPONENT SUPPLIER

CURRENT RATING

International Rectifier IRLML5203

3A

Siliconix SI2343

3.1 A

Step-Down Converter
The non-synchronous step-down converter operates at a fixed switching frequency using a fast response voltage
mode topology withfeed-forward input voltage. This topology allows simple internal compensation and it is
designed to operate with ceramic output capacitors. The converter drives an internal 2.8-A N-Channel MOSFET
switch. The MOSFET driver is referenced to the switch pin SWB. The N-Channel MOSFET requires a gate drive
voltage higher than the switch pin to turn the N-Channel MOSFET on. This is accomplished by a boost strap gate
drive circuit running of the step-down converter switch pin. When the switch pin SWB is at ground, the boot strap
capacitor is charged to 8 V. This way the N-Channel Gate drive voltage is typically around 8 V.

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Regulator
8V

VINB

BOOT

Q3
VINB

SWB
Control Logic

SWB

Current limit
Vref
Error Amplifier

Vref
FBB

Vref
Compensation
and
Softstart

Vlogic
select
Fixed 3.3V/adj

Sawtooth
Generator

Fixed 3.3V
Clock /2

Logic

0.9V
Clock

Clock /4
0.6V

Clock
750 kHz
Clock select for short circuit
and softstart

Figure 25. Block Diagram Buck Converter


Soft-start (Step-Down Converter)
To avoid high inrush current during start-up, an internal soft-start is implemented. When the step-down converter
is enabled, its reference voltage slowly rises from zero to its power good threshold of typically 90% of Vref. When
the reference voltage reaches this power good threshold, the error amplifier is released to its normal operation
with its normal duty cycle. To further limit the inrush current during soft-start, the converter frequency is set to
1/4th of the switching frequency fs and th of fs determined by the comparator that monitors the feedback voltage.
See the internal block diagram. The softstart is typically completed within 1 ms.
Setting the Output Voltage, Adjustable or Fixed 3.3V (step-down converter)
The device supports a fixed 3.3-V output voltage when the feedback FBB is connected to GND. When using the
external voltage divider any other output voltage can be programmed.
To set the adjustable output voltage of the step-down converter, use an external voltage divider to set the output
voltage. The output voltage is calculated as:

V out + 1.213 V

R9
1 ) R10

(7)

with R10 1.2 k and internal reference voltage V(ref)typ = 1.213 V


At load currents < 1 mA, the device operates in discontinuous conduction mode. When the load current is
reduced to zero, the output voltage rises slightly above the nominal output voltage. At zero load current, the
device skips clock cycles but does not completely stops switching thus the output voltage sits slightly above the
nominal output voltage. Therefore, the lower feedback resistor is selected to be around 1.2 k to have always
around 1 mA minimum load current.

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Selecting the Feed-forward Capacitor (step-down converter)


The feed-forward capacitor across the upper feedback resistor divider form a zero around 170 kHz and is
calculated as:
1
1
C17 =
=
= 468 pF = 470 pF
2 x p x 170kHz x R9
2 x p x 170kHz x 2k
(8)
The capacitor value closest to the calculated value is selected.
Inductor Selection (step-down converter)
The TPS65167 operates typically with a 10-H inductor value. For high efficiencies, the inductor should have a
low dc resistance to minimize conduction losses. This needs to be considered when selecting the appropriate
inductor. To avoid saturation of the inductor, the inductor should be rated at least for the maximum output current
of the converter plus the inductor ripple current that will be calculated as:
1 * Vout
DI
Vin
DI L + Vout
I Lmax + I outmax ) L
2
L
(9)
With:
f = Switching Frequency (750 kHz)
L = Inductor Value (typically 10 H)
IL= Peak to Peak inductor ripple current
ILax = Maximum Inductor current
The highest inductor current occurs at maximum Vin. A more conservative approach is to select the inductor
current rating just for the minimum switch current limit of 2.8 A.
Table 8. Inductor Selection (Step down converter)
INDUCTOR VALUE

COMPONENT SUPPLIER

DIMENSIONS in mm

Sat/DCR

10 H

Sumida CDRH8D43-100

8.3 8.3 4.5

4 A/29 m

10 H

Wuerth 744066100

10 10 3.8

4 A/25 m

10 H

Coilcraft DO3316P-103

12.95 9.4 5.51

3.9 A/38 m

Rectifier Diode Selection (step-down converter)


To achieve high efficiency, a Schottky diode should be used. The reverse voltage rating should be higher than
the maximum output voltage of the step-down converter. The averaged rectified forward current that the Schottky
diode must be rated is calculated as the off time of the step-down converter times the minimum switch current of
the TPS65167:
D + Vout
Vin
(10)

I avg + (1 * D)

Isw + 1 * Vout
Vin

2.8 A

with Isw = minimum switch current of the TPS65167 (2.8 A)

A Schottky diode with 2 A maximum average rectified forward current rating is sufficient for most of the
applications. The Schottky rectifier has to be able to dissipate the power. The dissipated power is the average
rectified forward current times the diode forward voltage.
P D + I avg VF + Isw (1 * D) VF
with Isw = minimum switch current of the TPS65167 (2.8 A)
Table 9. Rectifier Diode Selection step-down Converter
CURRENT RATING Avg.

Or

Vforward

RJA

SIZE

COMPONENT SUPPLIER

3A

20V

0.36 at 3A

46C/W

S.C.

MBRS320, International Rectifier

2A

20V

0.44V at 2A

75C/W

SMB

SL22, Vishay Semiconductor

2A

20V

0.5 at 2A

75C/W

SMB

SS22, Fairchild Semiconductor

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Output Capacitor Selection (step-down converter)


The device is designed to work with ceramic output capacitors. Two 22-F output capacitors are sufficient for
most of the applications. Larger output capacitance improves the load transient response.
Table 10. Output Capacitor Selection step-down Converter
CAPACITOR

VOLTAGE RATING

COMPONENT SUPPLIER

2 22 F/6.3 V

6.3 V

Taiyo Yuden JMK212BJ226MG

Positive Charge Pump


The positive charge pump is a fully integrated charge pump switching automatically its gain between doubler and
tripler mode. As shown in Figure 26, the input voltage of the positive charge pump is the SUP pin, that is
connected to the output of the main boost converter Vs.

FBP
OSC
750kHz

SUP

IDRVP
Control Logic
Automatic
Gain select
(doubler or
tripler mode)

Vref
1.213 V

C1N
Q4

C1P

Softstart
Q6
SUP = Vs

POUT
D3

Q3

D0
D1
C2P

D2

Q5

C2N

PGND

Figure 26. Positive Charge Pump Block Diagram


The charge pump requires two 330 nF flying capacitors and a 1 F output capacitance for stable operation. The
positive charge pump also supports a high voltage stress test by pulling the HVS pin high. This programs the
output voltage to a fixed output voltage of 30 V (TPS65167 only) by using a internal voltage divider. The
TPS65167A has this function disabled. In normal operation the HVS pin is pulled low and the output voltage is
programmed with the external voltage divider.

V out + 1.213 V

R4 + R5

1 ) R4

R5

Vout
* 1 + R5
V FB

(11)

Vout
*1
1.213

(12)

To minimize noise and leakage current sensitivity, keeping the lower feedback divider resistor R5 in the 20 k
range is recommended. A 100 pF feed-forward capacitor across the upper feedback resistor R4 is typically
required. For the capacitor selection, see Table 11.
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Table 11. Output Capacitor Selection Positive Charge Pump


CAPACITOR

COMPONENT SUPPLIER

COMMENT

330 nF/35 V

Taiyo Yuden GMK212BJ334KG

Flying capacitor C9, C20

1 F/35 V

Taiyo Yuden GMK107BJ105KA

Output capacitor on POUT

High Voltage Switch Control (Gate Voltage Shaping)


The TPS65167 has a high voltage switch integrated to provide gate voltage modulation of VGH. If this feature is
not required, then the CTRL pin has to be pulled high or connected to VIN. When the device is disabled or the
input voltage is below the undervoltage lockout (UVLO), then both switches Q4 and Q5 are off, and VGH is
discharge by a 1-k resistor over Q8, as shown in Figure 27.

FB

Power Good

FBP

Power Good

FBN

Power Good

UVLO
EN
POUT

CTRL
Vref
GDLY
3.5kW

Q4

I DLY

EN
VGH

Control
Voltage
clamp
5.8V max

CTRL = high Q4 on Q5 off


CTRL = low Q4 off Q5 on
EN = low Q4 and Q5 off,
Q8 on

1kW
Q5

AVIN
Q8

DRN

Vs

Vs
R13
10kW

R11
10kW
R10
1 kW

Option 1

R12
10kW
Option 2

Option 3

Figure 27. High Voltage Switch (Gate Voltage Shaping) Block TPS65167
To implement gate voltage shaping, the control signal from the LCD timing controller (TCON) is connected to
CTRL. The CTRL pin is activated once the device is enabled, the input voltage is above the under voltage
lockout, all the output voltages (Vs, VGL, VGH) are in regulation and the delay time set by the GDLY pin passed
by. As soon as one of the outputs is pulled below its Power Good level, Q4 and Q5 are turned off, and VGH is
discharged via a 1-k resistor over Q8.

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With CTRL=high, Q4 is turned on, and the charge pump output voltage is present at VGH. When the CTRL pin is
pulled low, then Q4 is turned off, and Q5 is turned on discharging VGH. The slope and time for discharging VGH
is determined by the LC Display capacitance and the termination on DRN. It is not required or recommended to
connect an additional output capacitor on VGH. There are three options available to terminate the DRN pin. The
chosen solution depends mainly on the LC Display capacitance and required overall converter efficiency.
td
VH
VGH
VL

CTRL

T
Timing:
1. td is set by the capacitor CE
2.The slope is set by the resistor RE
3. VL is set by the voltage applied to VD

Figure 28. High Voltage Switch (Gate Voltage Shaping) Timing Diagram
Option 1 in Figure 27 discharges VGH to Vs. The lower the resistor the faster the discharge.
Option 3 in Figure 27 constantly draws current from Vs due to the voltage divider connected to Vs. The
advantage of this solution is that the low level voltage VL is given by the voltage divider assuming the feedback
resistor values are small and allow to discharge the LC Display capacitance during the time, toff. Therefore, the
solution is not recommended for large display panels since the feedback divider resistors needs to be selected
too low which draws too much current from Vs.
Option 2 does not draw any current from Vs and; therefore, is better in terms of converter efficiency. The voltage
level VL where VGH is discharge to is determined by the LC Display capacitance, the resistor connected to DRN
and the off time, toff. The lower the resistor value connected to DRN the lower the discharge voltage level VL.
Adding any additional output capacitance to VGH is not recommend. If more capacitance is required, it needs to
be added to POUT instead.

High Voltage Stress Test (positive charge pump)


The TPS65167 incorporates a high voltage stress test where the output voltage of the boost converter Vs and
the positive charge pump POUT are set to a higher output voltage compared to the nominal programmed output
voltage. The High Voltage Stress test is enabled by pulling HVS pin to high. This sets POUT, respectively VGH
to 30 V, and the output voltage of the boost converter Vs is programmed to a higher voltage determined by the
resistor connected to RHVS. With HVS = high, the RHVS pin is pulled to GND which sets the voltage for the
boost converter during High Voltage Stress.
The TPS65167A has the high voltage stress test for the positive charge pump POUT disabled. The high voltage
stress test function is only enabled for the boost converter Vs.

Negative Charge Pump Driver


The negative charge pump provides a regulated output voltage set by the external resistor divider. The negative
charge pump inverts the input voltage applied to the SUPN pin and regulates it to the programmed voltage.

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SUPN

OSC
750kHz

Control
Logic
Softstart

Q7
DRVN
IDRVN

PGND

FBN
Vref
0V

Figure 29. Negative Charge Pump Block TPS65167


The output voltage is VGL = (Vin) + Vdrop. Vdrop is the voltage drop across the external diodes and internal
charge pump MOSFETs.
Setting the output voltage:
V out + *VREF R7 + *1.213 V
R8
|Vout|
|V out|
R7 + R8
+ R8
1.213
V REF

R7
R8

(13)

(14)

Since the reference output driver current should typically not exceed 30 A, the lower feedback resistor value R8
should be in a range of 40 k to 120 k. The negative charge pump requires two external Schottky diodes. The
peak current rating of the Schottky diode has to be twice the load current of the output. For the external
component selection refer to Table 12.
For a 20-mA output current, the dual Schottky diode BAV99 or BAT54 is recommended.
Table 12. Capacitor Selection
CAPACITOR

COMPONENT SUPPLIER

COMMENT

330 nF/35 V

Taiyo Yuden GMK212BJ334KG

Flying capacitor C15

2.2 F/10 V

Taiyo Yuden LMK107BJ225KA

Output capacitor on VGL

BAV99/BAT54

Any

Dual Schottky diode

LDO Controller Generating Vaux


The TPS65167 has a LDO controller using an external pass transistor. The input of the LDO controller can be
the 12-V power supply input or the output of the 3.3-V logic rail, as generated by the step-down converter. The
LDO controller is connected to the 3.3-V rail in order to minimize power losses across the external pass
transistor.

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FBLDO

PGND
5

39

BASE
40
Q2
PZT2907A

Vlogic
3.3V

R14*
100 W

C22
1m F

Vaux
1.5V/500mA

R11
1.6kW
R13
1kW

C23
22mF

R12
6.8kW
*Optional

Figure 30. LDO Controller Block TPS65167

Setting the output voltage, LDO controller


The output voltage of the LDO controller can be set with the resistor divider connected to the output of the LDO
controller. To set the LDO controller output voltage to 1.2V the feedback FBLDO can be connected directly to the
output. Any other output voltages is set using the external resistor divider and is calculated as:

V out + 1.213 V

1 ) R11

R12

(15)

Input Capacitor and Output Capacitor Selection, LDO Controller


For input voltage filtering, a 1-F input capacitor is sufficient. The output requires a least one 10-F output
capacitor for stability for load currents up to 300-mA. For load currents larger 300 mA, one 22-F output
capacitor is required. See Table 13 for the capacitor selection.

Table 13. Output Capacitor Selection


CAPACITOR

Iout

1 F/10 V

COMPONENT SUPPLIER

COMMENT

Taiyo Yuden LMK107BJ105KK

Input capacitor

10 F/10 V

300 mA

Taiyo Yuden LMK212BJ106KG

Output capacitor

22 F/10 V

>300 mA

Taiyo Yuden LMK212BJ226MG

Output capacitor

Base and Emitter Base Resistor Selection


A 1-k resistor (R13) is required across the emitter base of the external transistor. To limit the current into the
base during a short-circuit event, a 100- base resistor (R4) is required when the input is connected to the 3.3-V
rail. If the input is connected to the 12-V rail, then a 1-k (R4) resistor is required. R4 is optional and protects the
TPS65167 in case of a short-circuit event at the output of the LDO controller.

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External Transistor Selection


The external transistor is selected based on the required output current and collector saturation voltage. The
maximum collector saturation voltage is only important as the output voltage is close to the input voltage. This is
the case for a 3.3 V to 2.5 V conversion where the collector saturation voltage of the external transistor is lower
than 800 mV. To use low cost external transistors, the TPS65167 provides a minimum base drive current of 25
mA. The other important parameter is the maximum power dissipation the external transistor must be able to
handle. The power dissipation is the output current times the input to output voltage difference. See Table 14 for
the transistor selection
Table 14. Transistor Selection
CAPACITOR

Iout

COMPONENT SUPPLIER

COMMENT

PZT2907A

500 mA

Any

3.3 V to 2.5 V conversion at 150 mA


3.3 V to 1.6 V conversion at 500 mA

BCP52

1A

Any

3.3 V to 2.5 V conversion

BCP69

1A

Any

3.3 V to 2.5 V conversion

PCB Layout Design Guidelines


Temperature
Output
C29
1nF

31

9
C12
22nF 30

R6
0W

C13
10nF

25
27

CTRL
Signal

24
D3

R7
160kW

R8
39kW

C15
0.33mF

13

D4

11
C20
0.33mF

15
16

S UP

PGND

POUT
C2P

EN

C2N

REGOUT
COMP

VGH

TPS65167

GDLY

DRN

HVS

Vlogic

CTRL

BOOT

DRVN

SWB

FBN

SWB

C1P

FBB

C1N
10

14

37

32

PGND

26

C11
4.7uF

FBP

PGND

AVIN

PGND

38

GND

C1
22mF

RHVS

GND

C2
1mF

FB

VINB

REF

33

C6
10mF

C7
10mF

R1
365kW

19

TEMP

SW

GD

34

SUPN

Vin
6 V to 14V

C16
2.2mF

35

36
12

BASE

C28
470nF

C5
1mF

C4
10mF

C31
10mF

C3
10mF

Vs
15 V/1.5 A

SW

C24
1nF

VGL
-5 V/150mA

D1
SL22

L1
10mH

Q1
SI2343

FBLDO

R2
30kW

29
28

C8
47pF
C25 C26
C27 C32
10mF 10mF 10mF 10mF

R3
82kW

20
R4
300kW

21
C9
0.33mF

17

C10
1mF

18

R5
16kW

C30
100pF

VGH
24 V/50 mA

22
R14
1kW

23
7
2

C14
100nF
L2
10mH

4
3

D2
SL22

Vlogic
3.3V/2.5A
C18
22mF

C19
22mF

39

40
Q2
PZT2907A

C21
100nF

R16
100kW

C22
1mF

Vaux
1.5V/500mA
R11
1.6kW

R13
1kW

C23
22mF

R12
6.8kW

Figure 31. PCB Layout


1. Place the power components outlined in bold first on the PCB.
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2.
3.
4.
5.
6.
7.
8.

Route the traces outlined in bold with wide PCB traces.


Place a 1-F bypass capacitor directly from the SUP pin to GND and from AVIN to GND.
Use a short and wide trace to connect the SUP pin to the output of the boost converter Vs.
Place a 470-nF bypass capacitor directly from the SUPN pin to GND.
Place the 100-nF reference capacitor directly from REF to GND close to the IC pins.
The feedback resistor for the negative charge pump between FBN and REF needs to be >40 k.
Use short traces for the charge pump drive pin (DRVN) of VGL because the traces carry switching
waveforms.
9. Place the feedback resistors of the negative charge pump away from the DRVN trace to minimize coupling
10. Place the flying capacitors as close as possible to the C1P, C1N and C2P, C2N pin.
11. Solder the PowerPad of the QFN package to GND and use thermal vias to lower the thermal resistance.
12. A solid PCB ground structure is essential for good device performance.
The power pad is the analog ground connected to the internal reference
Pin 32, 33 are the power grounds for the boost converter Vs
Pin 5 is the power ground for the step-down converter Vlogic and internal digital circuit
Pin 6 is the power ground for the negative charge pump VGL
Pin 14 is the power ground for the positive charge pump POUT
Pin 37 is the analog ground for the internal reference
13. For more layout recommendations, see the TPS65167 evaluation module (EVM)

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TYPICAL APPLICATION
Temperature
Output
C27
1nF

1
C2
1uF

38
5
26
C11
4.7uF

9
C12
22nF 30

C13
10nF

25
27

CTRL
Signal

24
C15
0.33uF
D4

SUP

TEMP

POUT

EN

C2P
C2N

REGOUT

VGH

TPS65167

GDLY

DRN

HVS

Vlogic

CTRL

BOOT

DRVN

SWB

FBN

SWB

11
15
C1P
16

FBB

C1N
10

14

37

32

33

BASE

C20
0.33uF

PGND

R8
39kW

PGND

PGND

R7
160kW

FBP

PGND

C16
2.2uF

13

FB

AVIN

COMP

C6
22uF

C8
47pF

R1
365kW

C7
22uF

C29
22uF

19

31

RHVS

GND

D3

VGL
-5V/150mA

34

VINB

GND

R6
0W

C5
1uF

SUPN

REF

C1
22uF

35

SW

12

Vin
6V to 14V

GD

36

Vs
15V/1.7A

C4
22uF

C28
10uF

SW

C3
10uF

C24
1nF
C25
470nF

D1
SL22

L1
10uH

Q1
SI2343

FBLDO

R2
30kW

29
R3
82kW

28
20

R4
300kW

21
C9
0.33uF

17

C10
1uF

18

C26
100pF

R5
16kW
VGH
24V/50mA

22
R14
1kW

23
7

C14
100nF

L2
10uH

D2
SL22

3
8

R9
2kW

Vlogic
3.3V/
2.5A

C17
470nF
C18
22uF

C19
22uF

R10
1.2kW

39

40

C21
100nF

Q2
PZT2907A

C22
1uF

Vaux
1.5V/500mA
R11
1.6kW

R13
1kW

C23
22uF

R12
6.8kW

Figure 32. Typical Application with adjustable step down converter

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Temperature
Output
C29
1nF

1
C2
1uF

38
5
26
C11
4.7uF

9
C12
22nF 30

C13
10nF

25
27

CTRL
Signal

24
C15
0.33uF
D4

PGND

POUT

EN

C2P
C2N

REGOUT
COMP

VGH

TPS65167

GDLY

DRN

HVS

Vlogic

CTRL

BOOT

DRVN

SWB

FBN

SWB

C1P

FBB

11
15

C1N

10

14

37

32

33

BASE

16

PGND

C20
0.33uF

PGND

R8
39kW

FBP

PGND

R7
160kW

13

AVIN

GND

D3

FB

RHVS

GND

R6
0W

C6
10uF

R1
365kW

C7
10uF

19

VINB

REF

C1
22uF

31

TEMP

SW

GD
SUPN

Vin
6V to 14V

34

35

36
12

C16
2.2uF

C4
10uF

C31
10uF

SW

C28
470nF

Vs
15V/1.7A
C5
1uF

SUP

C3
10uF

C24
1nF

VGL
5V/150mA

D1
SL22

L1
10uH

Q1
SI2343

FBLDO

C27 C32
C26
10uF 10uF 10uF

R2
30kW

29
28

C8
47pF
C25
10uF

R3
82kW

20
R4
300kW

21
C9
0.33uF

17

C10
1uF

18

R5
16kW

C30
100pF

VGH
24V/50mA

22
R14
1kW

23
7
2

C14
100nF
L2
10uH

4
3

D2
SL22

Vlogic
3.3V/2.5A
C18
22uF

C19
22uF

39

40

C21
100nF

Q2
PZT2907A

R16
100W

C22
1uF

Vaux
1.5V/500mA
R11
1.6kW

R13
1kW

C23
22uF

R12
6.8kW

Figure 33. Typical Application With 3.3V Fixed Output Voltage Step Down Converter

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C29
1nF

1
C2
1uF

38
5
26
C11
4.7uF

9
C12
22nF 30
25
27

CTRL
Signal

24
C15
0.33uF

13

D4

PGND

POUT

EN

C2P
C2N

REGOUT
COMP

VGH

TPS65167

GDLY

DRN

HVS

Vlogic

CTRL

BOOT

DRVN

SWB

FBN

SWB

11
15
C1P
C1N

FBB

10

14

37

32

33

BASE

16

PGND

C20
0.33uF

PGND

R8
39kW

FBP

PGND

R7
160kW

AVIN

GND

D3

RHVS

GND

R6
0W

C13
10nF

FB

VINB

REF

C1
22uF

C6
10uF

R1
365kW

C7
10uF

19

31
TEMP

SW

GD

SUPN

Vin
6V to 14V

34

35

36
12

C16
2.2uF

C4
10uF

C31
10uF

SW

C28
470nF

Vs
15V/1.7A
C5
1uF

SUP

C3
10uF

C24
1nF

VGL
5V/150mA

D1
SL22

L1
10uH

Q1
SI2343

Temperature
Output

C26
10uF

C27 C32
10uF 10uF

R2
30kW

29
28

C8
47pF
C25
10uF

R3
82kW

20
R4
300kW

21
C9
0.33uF

17

C10
1uF

18

C30
100pF

R5
16kW
VGH
24V/50mA

22
R14
1kW

23
7
2

C14
100nF
L2
10uH

4
3

D2
SL22

Vlogic
3.3V/2.5A
C18
22uF

C19
22uF

FBLDO 39

40

C21
100nF

Q2
PZT2907A

R16
100W

C22
1uF

Vaux
1.2V/500mA
C23
22uF

R13
1kW

Figure 34. Typical Application With 1.2V LDO Controller

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Temperature
Output
C31
1nF
D1
SL22

L1
10uH

1
C2
1uF

38
5
26
C11
4.7uF

9
C12
22nF 30

C13
10nF

25
27

CTRL
Signal
C15
0.33uF
D4

SW

DRN

GDLY
HVS

Vlogic

CTRL

BOOT

DRVN

SWB

11
FBN

SWB

C1P

FBB

15
16

C1N

10

14

37

32

33

BASE

C20
0.33uF

28

FBLDO

C32
10uF

R2
30kW

R3
82kW
R15
200kW

20

R4
300kW
C9
0.33uF

17

C10
1uF

18

C30
100pF

R5
16kW

22

VGH
24V/50mA

R14
1kW

TPS65167

PGND

R8
39kW

VGH

COMP

PGND

R7
160kW

13

C2N

REGOUT

PGND

D3

C2P

C25 C26 C27


10uF 10uF 10uF

29

POUT

EN

C8
47pF

R1
365kW

C7
10uF

21

GND

C16
2.2uF

24

FB

FBP

AVIN
PGND

Vs
15V/1.5A

C29
100nF

RHVS

GND

VGL
-5V/150mA

C6
10uF

19

VINB

REF

R6
0W

SUPN

31

34

TEMP

Vin
6V to 14V

35

GD

36
12

C1
22uF

C24
10uF

SW

C28
470nF

C5
1uF

C4
10uF

SUP

C3
10uF

Q1
SI2304

23
7
2

C14
100nF
L2
10uH

4
3

Vlogic
3.3V/2.5A

D2
SL22

C18
22uF

C19
22uF

39

40

C21
100nF

Q2
PZT2907A

R16
100W

C22
1uF

Vaux
1.5V/500mA
R11
1.6kW

R13
1kW

C23
22uF

R12
6.8kW

Figure 35. Typical Application Using Isolation Switch at the Output of the Boost Converter

34

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Copyright 20072008, Texas Instruments Incorporated

Product Folder Link(s): TPS65167 TPS65167A

PACKAGE OPTION ADDENDUM

www.ti.com

24-Aug-2014

PACKAGING INFORMATION
Orderable Device

Status
(1)

TPS65167ARHAR

ACTIVE

Package Type Package Pins Package


Drawing
Qty
VQFN

RHA

40

2500

Eco Plan

Lead/Ball Finish

MSL Peak Temp

(2)

(6)

(3)

Green (RoHS
& no Sb/Br)

CU NIPDAU

Level-2-260C-1 YEAR

Op Temp (C)

Device Marking
(4/5)

-40 to 85

TPS
65167A

(1)

The marketing status values are defined as follows:


ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)

MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4)

There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5)

Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)

Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 1

Samples

PACKAGE OPTION ADDENDUM

www.ti.com

24-Aug-2014

Addendum-Page 2

PACKAGE MATERIALS INFORMATION


www.ti.com

6-Feb-2015

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins


Type Drawing

SPQ

Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)

B0
(mm)

K0
(mm)

P1
(mm)

W
Pin1
(mm) Quadrant

TPS65167ARHAR

VQFN

RHA

40

2500

330.0

16.4

6.3

6.3

1.1

12.0

16.0

Q2

TPS65167ARHAR

VQFN

RHA

40

2500

330.0

16.4

6.3

6.3

1.1

12.0

16.0

Q2

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION


www.ti.com

6-Feb-2015

*All dimensions are nominal

Device

Package Type

Package Drawing

Pins

SPQ

Length (mm)

Width (mm)

Height (mm)

TPS65167ARHAR

VQFN

RHA

40

2500

367.0

367.0

38.0

TPS65167ARHAR

VQFN

RHA

40

2500

367.0

367.0

38.0

Pack Materials-Page 2

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