Features

Single 2.7V - 3.6V Supply

Serial Peripheral Interface (SPI) Compatible
Supports SPI Modes 0 and 3

70 MHz Maximum Clock Frequency

Flexible, Uniform Erase Architecture

4-Kbyte Blocks
32-Kbyte Blocks
64-Kbyte Blocks
Full Chip Erase
Individual Sector Protection with Global Protect/Unprotect Feature
Thirty-two 64-Kbyte Physical Sectors
Hardware Controlled Locking of Protected Sectors
Flexible Programming Options
Byte/Page Program (1 to 256 Bytes)
Sequential Program Mode Capability
Automatic Checking and Reporting of Erase/Program Failures
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
5 mA Active Read Current (Typical)
10 A Deep Power-down Current (Typical)
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
8-lead SOIC (150-mil and 200-mil wide)
8-contact MLF (5 x 6 mm)

16-megabit
2.7-volt Only
Serial Firmware
DataFlash
Memory
AT26DF161A
Preliminary

1. Description
The AT26DF161A is a serial interface Flash memory device designed for use in a
wide variety of high-volume consumer-based applications in which program code is
shadowed from Flash memory into embedded or external RAM for execution. The
flexible erase architecture of the AT26DF161A, with its erase granularity as small as
4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional
data storage EEPROM devices.
The physical sectoring and the erase block sizes of the AT26DF161A have been optimized to meet the needs of todays code and data storage applications. By optimizing
the size of the physical sectors and erase blocks, the memory space can be used
much more efficiently. Because certain code modules and data storage segments
must reside by themselves in their own protected sectors, the wasted and unused
memory space that occurs with large sectored and large block erase Flash memory
devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the
same overall device density.

3640BDFLASH10/07

The AT26DF161A also offers a sophisticated method for protecting individual sectors against
erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while
keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in
applications where data storage segments need to be modified without running the risk of errant
modifications to the program code segments. In addition to individual sector protection capabilities, the AT26DF161A incorporates Global Protect and Global Unprotect features that allow the
entire memory array to be either protected or unprotected all at once. This reduces overhead
during the manufacturing process since sectors do not have to be unprotected one-by-one prior
to initial programming.
Specifically designed for use in 3-volt systems, the AT26DF161A supports read, program, and
erase operations with a supply voltage range of 2.7V to 3.6V. No separate voltage is required for
programming and erasing.

AT26DF161A
3640BDFLASH10/07

AT26DF161A
2. Pin Descriptions and Pinouts
Table 2-1.

Pin Descriptions
Asserted
State

Type

Low

Input

Symbol

Name and Function

CS

CHIP SELECT: Asserting the CS pin selects the device. When the CS pin is deasserted, the
device will be deselected and normally be placed in standby mode (not Deep Power-down mode),
and the SO pin will be in a high-impedance state. When the device is deselected, data will not be
accepted on the SI pin.
A high-to-low transition on the CS pin is required to start an operation, and a low-to-high transition
is required to end an operation. When ending an internally self-timed operation such as a program
or erase cycle, the device will not enter the standby mode until the completion of the operation.

SCK

SERIAL CLOCK: This pin is used to provide a clock to the device and is used to control the flow of
data to and from the device. Command, address, and input data present on the SI pin is always
latched on the rising edge of SCK, while output data on the SO pin is always clocked out on the
falling edge of SCK.

Input

SI

SERIAL INPUT: The SI pin is used to shift data into the device. The SI pin is used for all data input
including command and address sequences. Data on the SI pin is always latched on the rising
edge of SCK.

Input

SO

SERIAL OUTPUT: The SO pin is used to shift data out from the device. Data on the SO pin is
always clocked out on the falling edge of SCK.

WP

WRITE PROTECT: The WP pin controls the hardware locking feature of the device. Please refer to
section Protection Commands and Features on page 15 for more details on protection features
and the WP pin.
The WP pin is internally pulled-high and may be left floating if hardware-controlled protection will
not be used. However, it is recommended that the WP pin also be externally connected to VCC
whenever possible.

Low

Input

HOLD

HOLD: The HOLD pin is used to temporarily pause serial communication without deselecting or
resetting the device. While the HOLD pin is asserted, transitions on the SCK pin and data on the
SI pin will be ignored, and the SO pin will be in a high-impedance state.
The CS pin must be asserted, and the SCK pin must be in the low state in order for a Hold
condition to start. A Hold condition pauses serial communication only and does not have an effect
on internally self-timed operations such as a program or erase cycle. Please refer to section Hold
on page 30 for additional details on the Hold operation.
The HOLD pin is internally pulled-high and may be left floating if the Hold function will not be used.
However, it is recommended that the HOLD pin also be externally connected to VCC whenever
possible.

Low

Input

VCC

DEVICE POWER SUPPLY: The VCC pin is used to supply the source voltage to the device.
Operations at invalid VCC voltages may produce spurious results and should not be attempted.

Power

GND

GROUND: The ground reference for the power supply. GND should be connected to the
system ground.

Power

Figure 2-1.
CS
SO
WP
GND

8-SOIC Top View

1
2
3
4

8
7
6
5

VCC
HOLD
SCK
SI

Figure 2-2.
CS
SO
WP
GND

Output

8-MLF Top View

VCC
HOLD
6 SCK
5 SI

3
4

3
3640BDFLASH10/07

3. Block Diagram

CONTROL AND
PROTECTION LOGIC

CS

SI
SO

SRAM
DATA BUFFER
INTERFACE
CONTROL
AND
LOGIC
ADDRESS LATCH

SCK

I/O BUFFERS
AND LATCHES

WP
HOLD

Y-DECODER

Y-GATING

X-DECODER

FLASH
MEMORY
ARRAY

4. Memory Array
To provide the greatest flexibility, the memory array of the AT26DF161A can be erased in four
levels of granularity including a full chip erase. In addition, the array has been divided into physical sectors of various sizes, of which each sector can be individually protected from program
and erase operations. The sizes of the physical sectors are optimized for both code and data
storage applications, allowing both code and data segments to reside in their own isolated
regions. Figure 4-1 on page 5 illustrates the breakdown of each erase level as well as the breakdown of each physical sector.

AT26DF161A
3640BDFLASH10/07

AT26DF161A
Memory Architecture Diagram
Block Erase Detail
64KB
32KB
Block Erase
Block Erase
(D8h Command) (52h Command)

32KB

64KB
(Sector 31)

64KB

32KB

32KB

64KB
(Sector 30)

64KB

32KB

32KB

64KB
(Sector 0)

64KB

32KB

4KB
Block Erase
(20h Command)
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB

Block Address
Range
1FFFFFh
1FEFFFh
1FDFFFh
1FCFFFh
1FBFFFh
1FAFFFh
1F9FFFh
1F8FFFh
1F7FFFh
1F6FFFh
1F5FFFh
1F4FFFh
1F3FFFh
1F2FFFh
1F1FFFh
1F0FFFh
1EFFFFh
1EEFFFh
1EDFFFh
1ECFFFh
1EBFFFh
1EAFFFh
1E9FFFh
1E8FFFh
1E7FFFh
1E6FFFh
1E5FFFh
1E4FFFh
1E3FFFh
1E2FFFh
1E1FFFh
1E0FFFh

1FF000h
1FE000h
1FD000h
1FC000h
1FB000h
1FA000h
1F9000h
1F8000h
1F7000h
1F6000h
1F5000h
1F4000h
1F3000h
1F2000h
1F1000h
1F0000h
1EF000h
1EE000h
1ED000h
1EC000h
1EB000h
1EA000h
1E9000h
1E8000h
1E7000h
1E6000h
1E5000h
1E4000h
1E3000h
1E2000h
1E1000h
1E0000h

00FFFFh
00EFFFh
00DFFFh
00CFFFh
00BFFFh
00AFFFh
009FFFh
008FFFh
007FFFh
006FFFh
005FFFh
004FFFh
003FFFh
002FFFh
001FFFh
000FFFh

00F000h
00E000h
00D000h
00C000h
00B000h
00A000h
009000h
008000h
007000h
006000h
005000h
004000h
003000h
002000h
001000h
000000h

Internal Sectoring for

Sector Protection
Function

Page Program Detail

4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB
4KB

1-256 Byte
Page Program
(02h Command)
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes

Page Address
Range
1FFFFFh
1FFEFFh
1FFDFFh
0FFCFFh
1FFBFFh
1FFAFFh
1FF9FFh
1FF8FFh
1FF7FFh
1FF6FFh
1FF5FFh
1FF4FFh
1FF3FFh
1FF2FFh
1FF1FFh
1FF0FFh
1FEFFFh
1FEEFFh
1FEDFFh
1FECFFh
1FEBFFh
1FEAFFh
1FE9FFh
1FE8FFh

1FFF00h
1FFE00h
1FFD00h
0FFC00h
1FFB00h
1FFA00h
1FF900h
1FF800h
1FF700h
1FF600h
1FF500h
1FF400h
1FF300h
1FF200h
1FF100h
1FF000h
1FEF00h
1FEE00h
1FED00h
1FEC00h
1FEB00h
1FEA00h
1FE900h
1FE800h

0017FFh
0016FFh
0015FFh
0014FFh
0013FFh
0012FFh
0011FFh
0010FFh
000FFFh
000EFFh
000DFFh
000CFFh
000BFFh
000AFFh
0009FFh
0008FFh
0007FFh
0006FFh
0005FFh
0004FFh
0003FFh
0002FFh
0001FFh
0000FFh

001700h
001600h
001500h
001400h
001300h
001200h
001100h
001000h
000F00h
000E00h
000D00h
000C00h
000B00h
000A00h
000900h
000800h
000700h
000600h
000500h
000400h
000300h
000200h
000100h
000000h

Figure 4-1.

256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes
256 Bytes

5
3640BDFLASH10/07

5. Device Operation
The AT26DF161A is controlled by a set of instructions that are sent from a host controller, commonly referred to as the SPI Master. The SPI Master communicates with the AT26DF161A via
the SPI bus which is comprised of four signal lines: Chip Select (CS), Serial Clock (SCK), Serial
Input (SI), and Serial Output (SO).
The SPI protocol defines a total of four modes of operation (mode 0, 1, 2, or 3) with each mode
differing in respect to the SCK polarity and phase and how the polarity and phase control the
flow of data on the SPI bus. The AT26DF161A supports the two most common modes, SPI
modes 0 and 3. The only difference between SPI modes 0 and 3 is the polarity of the SCK signal
when in the inactive state (when the SPI Master is in standby mode and not transferring any
data). With SPI modes 0 and 3, data is always latched in on the rising edge of SCK and always
output on the falling edge of SCK.
Figure 5-1.

SPI Mode 0 and 3

CS

SCK

SI

MSB

SO

LSB

MSB

LSB

6. Commands and Addressing

A valid instruction or operation must always be started by first asserting the CS pin. After the CS
pin has been asserted, the SPI Master must then clock out a valid 8-bit opcode on the SPI bus.
Following the opcode, instruction dependent information such as address and data bytes would
then be clocked out by the SPI Master. All opcode, address, and data bytes are transferred with
the most significant bit (MSB) first. An operation is ended by deasserting the CS pin.
Opcodes not supported by the AT26DF161A will be ignored by the device and no operation will
be started. The device will continue to ignore any data presented on the SI pin until the start of
the next operation (CS pin being deasserted and then reasserted). In addition, if the CS pin is
deasserted before complete opcode and address information is sent to the device, then no operation will be performed and the device will simply return to the idle state and wait for the next
operation.
Addressing of the device requires a total of three bytes of information to be sent, representing
address bits A23 - A0. Since the upper address limit of the AT26DF161A memory array is
1FFFFFh, address bits A23 - A21 are always ignored by the device.

AT26DF161A
3640BDFLASH10/07

AT26DF161A
Table 6-1.

Command Listing

Command

Opcode

Address Bytes

Dummy Bytes

Data Bytes

Read Commands
Read Array

0Bh

0000 1011

1+

Read Array (Low Frequency)

03h

0000 0011

1+

Block Erase (4 Kbytes)

20h

0010 0000

Block Erase (32 Kbytes)

52h

0101 0010

Block Erase (64 Kbytes)

D8h

1101 1000

60h

0110 0000

C7h

1100 0111

02h

0000 0010

Program and Erase Commands

Chip Erase
Byte/Page Program (1 to 256 Bytes)

1+

(1)

ADh

1010 1101

3, 0

AFh

1010 1111

3, 0(1)

Write Enable

06h

0000 0110

Write Disable

04h

0000 0100

Protect Sector

36h

0011 0110

Unprotect Sector

39h

0011 1001

Sequential Program Mode

Protection Commands

Global Protect/Unprotect
Read Sector Protection Registers

Use Write Status Register command

3Ch

0011 1100

1+

Read Status Register

05h

0000 0101

1+

Write Status Register

01h

0000 0001

Read Manufacturer and Device ID

9Fh

1001 1111

1 to 4

Deep Power-down

B9h

1011 1001

Resume from Deep Power-down

ABh

1010 1011

Status Register Commands

Miscellaneous Commands

Note:

1. Three address bytes are only required for the first operation to designate the address to start programming at. Afterwards,
the internal address counter automatically increments, so subsequent Sequential Program Mode operations only require
clocking in of the opcode and the data byte until the Sequential Program Mode has been exited.

7
3640BDFLASH10/07

7. Read Commands
7.1

Read Array
The Read Array command can be used to sequentially read a continuous stream of data from
the device by simply providing the SCK signal once the initial starting address has been specified. The device incorporates an internal address counter that automatically increments on every
clock cycle.
Two opcodes, 0Bh and 03h, can be used for the Read Array command. The use of each opcode
depends on the maximum SCK frequency that will be used to read data from the device. The
0Bh opcode can be used at any SCK frequency up to the maximum specified by fSCK. The 03h
opcode can be used for lower frequency read operations up to the maximum specified by fRDLF.
To perform the Read Array operation, the CS pin must first be asserted and the appropriate
opcode (0Bh or 03h) must be clocked into the device. After the opcode has been clocked in, the
three address bytes must be clocked in to specify the starting address location of the first byte to
read within the memory array. If the 0Bh opcode is used, then one don't care byte must also be
clocked in after the three address bytes.
After the three address bytes (and the one don't care byte if using opcode 0Bh) have been
clocked in, additional clock cycles will result in serial data being output on the SO pin. The data
is always output with the MSB of a byte first. When the last byte (1FFFFFh) of the memory array
has been read, the device will continue reading back at the beginning of the array (000000h).
No delays will be incurred when wrapping around from the end of the array to the beginning
of the array.
Deasserting the CS pin will terminate the read operation and put the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte
of data be read.

Figure 7-1.

Read Array 0Bh Opcode

CS
0

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48

SCK
OPCODE

SI

ADDRESS BITS A23-A0

0

MSB

DON'T CARE
A

MSB

MSB

DATA BYTE 1

SO

HIGH-IMPEDANCE

MSB

Figure 7-2.

MSB

Read Array 03h Opcode

CS
0

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40

SCK
OPCODE

SI

ADDRESS BITS A23-A0

0

MSB

MSB

DATA BYTE 1

SO

HIGH-IMPEDANCE

D
MSB

MSB

AT26DF161A
3640BDFLASH10/07

AT26DF161A
8. Program and Erase Commands
8.1

Byte/Page Program
The Byte/Page Program command allows anywhere from a single byte of data to 256 bytes of
data to be programmed into previously erased memory locations. An erased memory location is
one that has all eight bits set to the logical 1 state (a byte value of FFh). Before a Byte/Page
Program command can be started, the Write Enable command must have been previously
issued to the device (see Write Enable on page 15 command description) to set the Write
Enable Latch (WEL) bit of the Status Register to a logical 1 state.
To perform a Byte/Page Program command, an opcode of 02h must be clocked into the device
followed by the three address bytes denoting the first byte location of the memory array to begin
programming at. After the address bytes have been clocked in, data can then be clocked into the
device and will be stored in an internal buffer.
If the starting memory address denoted by A23 - A0 does not fall on an even 256-byte page
boundary (A7 - A0 are not all 0s), then special circumstances regarding which memory locations
will be programmed will apply. In this situation, any data that is sent to the device that goes
beyond the end of the page will wrap around back to the beginning of the same page. For example, if the starting address denoted by A23 - A0 is 0000FEh, and three bytes of data are sent to
the device, then the first two bytes of data will be programmed at addresses 0000FEh and
0000FFh while the last byte of data will be programmed at address 000000h. The remaining
bytes in the page (addresses 000001h through 0000FDh) will be unaffected and will not change.
In addition, if more than 256 bytes of data are sent to the device, then only the last 256 bytes
sent will be latched into the internal buffer.
When the CS pin is deasserted, the device will take the data stored in the internal buffer and program it into the appropriate memory array locations based on the starting address specified by
A23 - A0 and the number of data bytes sent to the device. If less than 256 bytes of data were
sent to the device, then the remaining bytes within the page will not be altered. The programming of the data bytes is internally self-timed and should take place in a time of tPP.
The three address bytes and at least one complete byte of data must be clocked into the device
before the CS pin is deasserted, and the CS pin must be deasserted on even byte boundaries
(multiples of eight bits); otherwise, the device will abort the operation and no data will be programmed into the memory array. In addition, if the address specified by A23 - A0 points to a
memory location within a sector that is in the protected state (see section Protect Sector on
page 16), then the Byte/Page Program command will not be executed, and the device will return
to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will be
reset back to the logical 0 state if the program cycle aborts due to an incomplete address being
sent, an incomplete byte of data being sent, or because the memory location to be programmed
is protected.
While the device is programming, the Status Register can be read and will indicate that the
device is busy. For faster throughput, it is recommended that the Status Register be polled
rather than waiting the tBP or tPP time to determine if the data bytes have finished programming.
At some point before the program cycle completes, the WEL bit in the Status Register will be
reset back to the logical 0 state.
The device also incorporates an intelligent programming algorithm that can detect when a byte
location fails to program properly. If a programming error arises, it will be indicated by the EPE
bit in the Status Register.

9
3640BDFLASH10/07

The Byte/Page Program mode is the default programming mode after the device powers-up or
resumes from a device reset.
Figure 8-1.

Byte Program

CS
0

10 11 12

29 30 31 32 33 34 35 36 37 38 39

SCK
OPCODE

SI

ADDRESS BITS A23-A0

0

MSB

MSB

MSB

HIGH-IMPEDANCE

SO
Figure 8-2.

DATA IN

Page Program

CS
0

29 30 31 32 33 34 35 36 37 38 39

SCK
OPCODE

SI

ADDRESS BITS A23-A0

0

MSB

SO

8.2

A
MSB

DATA IN BYTE 1
D
MSB

DATA IN BYTE n
D

MSB

HIGH-IMPEDANCE

Sequential Program Mode

The Sequential Program Mode improves throughput over the Byte/Page Program command
when the Byte/Page Program command is used to program single bytes only into consecutive
address locations. For example, some systems may be designed to program only a single byte
of information at a time and cannot utilize a buffered Page Program operation due to design
restrictions. In such a case, the system would normally have to perform multiple Byte Program
operations in order to program data into sequential memory locations. This approach can add
considerable system overhead and SPI bus traffic.
The Sequential Programming Mode helps reduce system overhead and bus traffic by incorporating an internal address counter that keeps track of the byte location to program, thereby
eliminating the need to supply an address sequence to the device for every byte to program.
When using the Sequential Program mode, all address locations to be programmed must be in
the erased state. Before the Sequential Program mode can first be entered, the Write Enable
command must have been previously issued to the device to set the WEL bit of the Status Register to a logical 1 state.
To start the Sequential Program Mode, the CS pin must first be asserted, and either an opcode
of ADh or AFh must be clocked into the device. For the first program cycle, three address bytes
must be clocked in after the opcode to designate the first byte location to program. After the
address bytes have been clocked in, the byte of data to be programmed can be sent to the

10

AT26DF161A
3640BDFLASH10/07

AT26DF161A
device. Deasserting the CS pin will start the internally self-timed program operation, and the byte
of data will be programmed into the memory location specified by A23 - A0.
After the first byte has been successfully programmed, a second byte can be programmed by
simply reasserting the CS pin, clocking in the ADh or AFh opcode, and then clocking in the next
byte of data. When the CS pin is deasserted, the second byte of data will be programmed into
the next sequential memory location. The process would be repeated for any additional bytes.
There is no need to reissue the Write Enable command once the Sequential Program Mode has
been entered.
When the last desired byte has been programmed into the memory array, the Sequential
Program Mode operation can be terminated by reasserting the CS pin and sending the
Write Disable command to the device to reset the WEL bit in the Status Register back to the
logical 0 state.
If more than one byte of data is ever clocked in during each program cycle, then only the last
byte of data sent on the SI pin will be stored in the internal latches. The programming of each
byte is internally self-timed and should take place in a time of tBP. For each program cycle, a
complete byte of data must be clocked into the device before the CS pin is deasserted, and the
CS pin must be deasserted on even byte boundaries (multiples of eight bits); otherwise, the
device will abort the operation, the byte of data will not be programmed into the memory array,
and the WEL bit in the Status Register will be reset back to the logical 0 state.
If the address initially specified by A23 - A0 points to a memory location within a sector that is in
the protected state, then the Sequential Program Mode command will not be executed, and the
device will return to the idle state once the CS pin has been deasserted. The WEL bit in the Status Register will also be reset back to the logical 0 state.
There is no address wrapping when using the Sequential Program Mode. Therefore, when the
last byte (1FFFFFh) of the memory array has been programmed, the device will automatically
exit the Sequential Program mode and reset the WEL bit in the Status Register back to the logical 0 state. In addition, the Sequential Program mode will not automatically skip over protected
sectors; therefore, once the highest unprotected memory location in a programming sequence
has been programmed, the device will automatically exit the Sequential Program mode and
reset the WEL bit in the Status Register. For example, if Sector 1 was protected and Sector 0
was currently being programmed, once the last byte of Sector 0 was programmed, the Sequential Program mode would automatically end. To continue programming with Sector 2, the
Sequential Program mode would have to be restarted by supplying the ADh or AFh opcode, the
three address bytes, and the first byte of Sector 2 to program.
While the device is programming a byte, the Status Register can be read and will indicate that
the device is busy. For faster throughput, it is recommended that the Status Register be polled at
the end of each program cycle rather than waiting the tBP time to determine if the byte has finished programming before starting the next Sequential Program mode cycle.
The device also incorporates an intelligent programming algorithm that can detect when a byte
location fails to program properly. If a programming error arises, it will be indicated by the EPE
bit in the Status Register.

11
3640BDFLASH10/07

Figure 8-3.

Sequential Program Mode Status Register Polling

CS
Status Register Read Seqeuntial Program Mode
Command
Command

Seqeuntial Program Mode

Command

SI

Opcode A23-16

A15-8

A7-0

Data

05h

Opcode

Data

Seqeuntial Program Mode Write Disable

Command
Command
05h

Opcode

Data

04h

05h

First Address to Program

STATUS REGISTER
DATA

STATUS REGISTER
DATA

STATUS REGISTER
DATA

HIGH-IMPEDANCE

SO

Note: Each transition

Figure 8-4.

shown for SI represents one byte (8 bits)

Sequential Program Mode Waiting Maximum Byte Program Time

CS
tBP
Seqeuntial Program Mode
Command

SI

Opcode A23-16

A15-8

A7-0

Data

tBP

tBP

Seqeuntial Program Mode

Command

Seqeuntial Program Mode

Command

Write Disable
Command

Opcode

Opcode

04h

Data

Data

First Address to Program

SO

HIGH-IMPEDANCE

Note: Each transition

8.3

shown for SI represents one byte (8 bits)

Block Erase
A block of 4, 32, or 64 Kbytes can be erased (all bits set to the logical 1 state) in a single operation by using one of three different opcodes for the Block Erase command. An opcode of 20h is
used for a 4-Kbyte erase, an opcode of 52h is used for a 32-Kbyte erase, and an opcode of D8h
is used for a 64-Kbyte erase. Before a Block Erase command can be started, the Write Enable
command must have been previously issued to the device to set the WEL bit of the Status Register to a logical 1 state.
To perform a Block Erase, the CS pin must first be asserted and the appropriate opcode (20h,
52h or D8h) must be clocked into the device. After the opcode has been clocked in, the three
address bytes specifying an address within the 4-, 32-, or 64-Kbyte block to be erased must be
clocked in. Any additional data clocked into the device will be ignored. When the CS pin is deasserted, the device will erase the appropriate block. The erasing of the block is internally selftimed and should take place in a time of tBLKE.
Since the Block Erase command erases a region of bytes, the lower order address bits do not
need to be decoded by the device. Therefore, for a 4-Kbyte erase, address bits A11 - A0 will be
ignored by the device and their values can be either a logical 1 or 0. For a 32-Kbyte erase,
address bits A14 - A0 will be ignored, and for a 64-Kbyte erase, address bits A15 - A0 will be
ignored by the device. Despite the lower order address bits not being decoded by the device, the
complete three address bytes must still be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);
otherwise, the device will abort the operation and no erase operation will be performed.

12

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AT26DF161A
If the address specified by A23 - A0 points to a memory location within a sector that is in the protected state, then the Block Erase command will not be executed, and the device will return to
the idle state once the CS pin has been deasserted. In addition, with the larger Block Erase
sizes of 32K and 64 Kbytes, more than one physical sector may be erased (e.g. sectors 18
through 15) at one time. Therefore, in order to erase a larger block that may span more than one
sector, all of the sectors in the span must be in the unprotected state. If one of the physical sectors within the span is in the protected state, then the device will ignore the Block Erase
command and will return to the idle state once the CS pin is deasserted.
The WEL bit in the Status Register will be reset back to the logical 0 state if the erase cycle
aborts due to an incomplete address being sent or because a memory location within the region
to be erased is protected.
While the device is executing a successful erase cycle, the Status Register can be read and will
indicate that the device is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tBLKE time to determine if the device has finished erasing. At
some point before the erase cycle completes, the WEL bit in the Status Register will be reset
back to the logical 0 state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location
fails to erase properly. If an erase error occurs, it will be indicated by the EPE bit in the Status
Register.
Figure 8-5.

Block Erase

CS
0

10 11 12

26 27 28 29 30 31

SCK
OPCODE

SI

MSB

SO

ADDRESS BITS A23-A0

C

MSB

HIGH-IMPEDANCE

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8.4

Chip Erase
The entire memory array can be erased in a single operation by using the Chip Erase command.
Before a Chip Erase command can be started, the Write Enable command must have been previously issued to the device to set the WEL bit of the Status Register to a logical 1 state.
Two opcodes, 60h and C7h, can be used for the Chip Erase command. There is no difference in
device functionality when utilizing the two opcodes, so they can be used interchangeably. To
perform a Chip Erase, one of the two opcodes (60h or C7h) must be clocked into the device.
Since the entire memory array is to be erased, no address bytes need to be clocked into the
device, and any data clocked in after the opcode will be ignored. When the CS pin is deasserted,
the device will erase the entire memory array. The erasing of the device is internally self-timed
and should take place in a time of tCHPE.
The complete opcode must be clocked into the device before the CS pin is deasserted, and the
CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no
erase will be performed. In addition, if any sector of the memory array is in the protected state,
then the Chip Erase command will not be executed, and the device will return to the idle state
once the CS pin has been deasserted. The WEL bit in the Status Register will be reset back to
the logical 0 state if a sector is in the protected state.
While the device is executing a successful erase cycle, the Status Register can be read and will
indicate that the device is busy. For faster throughput, it is recommended that the Status Register be polled rather than waiting the tCHPE time to determine if the device has finished erasing. At
some point before the erase cycle completes, the WEL bit in the Status Register will be reset
back to the logical 0 state.
The device also incorporates an intelligent erase algorithm that can detect when a byte location
fails to erase properly. If an erase error occurs, it will be indicated by the EPE bit in the Status
Register.
Figure 8-6.

Chip Erase

CS
0

SCK
OPCODE

SI

MSB

SO

14

HIGH-IMPEDANCE

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AT26DF161A
9. Protection Commands and Features
9.1

Write Enable
The Write Enable command is used to set the Write Enable Latch (WEL) bit in the Status Register to a logical 1 state. The WEL bit must be set before a program, erase, Protect Sector,
Unprotect Sector, or Write Status Register command can be executed. This makes the issuance
of these commands a two step process, thereby reducing the chances of a command being
accidentally or erroneously executed. If the WEL bit in the Status Register is not set prior to the
issuance of one of these commands, then the command will not be executed.
To issue the Write Enable command, the CS pin must first be asserted and the opcode of 06h
must be clocked into the device. No address bytes need to be clocked into the device, and any
data clocked in after the opcode will be ignored. When the CS pin is deasserted, the WEL bit in
the Status Register will be set to a logical 1. The complete opcode must be clocked into the
device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of
the WEL bit will not change.
Figure 9-1.

Write Enable

CS
0

SCK
OPCODE

SI

MSB

SO

9.2

HIGH-IMPEDANCE

Write Disable
The Write Disable command is used to reset the Write Enable Latch (WEL) bit in the Status Register to the logical 0 state. With the WEL bit reset, all program, erase, Protect Sector, Unprotect
Sector, and Write Status Register commands will not be executed. The Write Disable command
is also used to exit the Sequential Program Mode. Other conditions can also cause the WEL bit
to be reset; for more details, refer to the WEL bit section of the Status Register description.
To issue the Write Disable command, the CS pin must first be asserted and the opcode of 04h
must be clocked into the device. No address bytes need to be clocked into the device, and any
data clocked in after the opcode will be ignored. When the CS pin is deasserted, the WEL bit in
the Status Register will be reset to a logical 0. The complete opcode must be clocked into the
device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte
boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of
the WEL bit will not change.

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3640BDFLASH10/07

Figure 9-2.

Write Disable

CS
0

SCK
OPCODE

SI

MSB

SO

9.3

HIGH-IMPEDANCE

Protect Sector
Every physical sector of the device has a corresponding single-bit Sector Protection Register
that is used to control the software protection of a sector. Upon device power-up or after a
device reset, each Sector Protection Register will default to the logical 1 state indicating that all
sectors are protected and cannot be programmed or erased.
Issuing the Protect Sector command to a particular sector address will set the corresponding
Sector Protection Register to the logical 1 state. The following table outlines the two states of
the Sector Protection Registers.
Table 9-1.
Value

Sector Protection Register Values

Sector Protection Status

Sector is unprotected and can be programmed and erased.

Sector is protected and cannot be programmed or erased. This is the default state.

Before the Protect Sector command can be issued, the Write Enable command must have been
previously issued to set the WEL bit in the Status Register to a logical 1. To issue the Protect
Sector command, the CS pin must first be asserted and the opcode of 36h must be clocked into
the device followed by three address bytes designating any address within the sector to be
locked. Any additional data clocked into the device will be ignored. When the CS pin is deasserted, the Sector Protection Register corresponding to the physical sector addressed by
A23 - A0 will be set to the logical 1 state, and the sector itself will then be protected from
program and erase operations. In addition, the WEL bit in the Status Register will be reset back
to the logical 0 state.
The complete three address bytes must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);
otherwise, the device will abort the operation, the state of the Sector Protection Register will be
unchanged, and the WEL bit in the Status Register will be reset to a logical 0.
As a safeguard against accidental or erroneous protecting or unprotecting of sectors, the Sector
Protection Registers can themselves be locked from updates by using the SPRL (Sector Protection Registers Locked) bit of the Status Register (please refer to the Status Register description
for more details). If the Sector Protection Registers are locked, then any attempts to issue the
Protect Sector command will be ignored, and the device will reset the WEL bit in the Status Register back to a logical 0 and return to the idle state once the CS pin has been deasserted.

16

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AT26DF161A
Figure 9-3.

Protect Sector
CS
0

10 11 12

26 27 28 29 30 31

SCK
OPCODE

SI

ADDRESS BITS A23-A0

1

MSB

SO

9.4

MSB

HIGH-IMPEDANCE

Unprotect Sector
Issuing the Unprotect Sector command to a particular sector address will reset the corresponding Sector Protection Register to the logical 0 state (see Table 9-1 for Sector Protection
Register values). Every physical sector of the device has a corresponding single-bit Sector Protection Register that is used to control the software protection of a sector.
Before the Unprotect Sector command can be issued, the Write Enable command must have
been previously issued to set the WEL bit in the Status Register to a logical 1. To issue the
Unprotect Sector command, the CS pin must first be asserted and the opcode of 39h must be
clocked into the device. After the opcode has been clocked in, the three address bytes designating any address within the sector to be unlocked must be clocked in. Any additional data clocked
into the device after the address bytes will be ignored. When the CS pin is deasserted, the Sector Protection Register corresponding to the sector addressed by A23 - A0 will be reset to the
logical 0 state, and the sector itself will be unprotected. In addition, the WEL bit in the Status
Register will be reset back to the logical 0 state.
The complete three address bytes must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits);
otherwise, the device will abort the operation, the state of the Sector Protection Register will be
unchanged, and the WEL bit in the Status Register will be reset to a logical 0.
As a safeguard against accidental or erroneous locking or unlocking of sectors, the Sector Protection Registers can themselves be locked from updates by using the SPRL (Sector Protection
Registers Locked) bit of the Status Register (please refer to the Status Register description for
more details). If the Sector Protection Registers are locked, then any attempts to issue the
Unprotect Sector command will be ignored, and the device will reset the WEL bit in the Status
Register back to a logical 0 and return to the idle state once the CS pin has been deasserted.
Figure 9-4.

Unprotect Sector
CS
0

10 11 12

26 27 28 29 30 31

SCK
OPCODE

SI

ADDRESS BITS A23-A0

0

MSB

SO

MSB

HIGH-IMPEDANCE

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9.5

Global Protect/Unprotect
The Global Protect and Global Unprotect features can work in conjunction with the Protect Sector and Unprotect Sector functions. For example, a system can globally protect the entire
memory array and then use the Unprotect Sector command to individually unprotect certain sectors and individually reprotect them later by using the Protect Sector command. Likewise, a
system can globally unprotect the entire memory array and then individually protect certain sectors as needed.
Performing a Global Protect or Global Unprotect is accomplished by writing a certain combination of data to the Status Register using the Write Status Register command (see Write Status
Register section on page 26 for command execution details). The Write Status Register command is also used to modify the SPRL (Sector Protection Registers Locked) bit to control
hardware and software locking.
To perform a Global Protect, the appropriate WP pin and SPRL conditions must be met, and the
system must write a logical 1 to bits 5, 4, 3, and 2 of the Status Register. Conversely, to perform a Global Unprotect, the same WP and SPRL conditions must be met but the system must
write a logical 0 to bits 5, 4, 3, and 2 of the Status Register. Table 9-2 details the conditions
necessary for a Global Protect or Global Unprotect to be performed.

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AT26DF161A
Table 9-2.

WP
State

Valid SPRL and Global Protect/Unprotect Conditions

Current
SPRL
Value

New
Write Status
Register Data

New
SPRL
Value

Bit
76543210

Protection Operation

0x0000xx
0x0001xx

0x1110xx
0x1111xx

Global Unprotect all Sector Protection Registers reset to 0

No change to current protection.
No change to current protection.
No change to current protection.
Global Protect all Sector Protection Registers set to 1

0
0
0
0
0

1x0000xx
1x0001xx

1x1110xx
1x1111xx

Global Unprotect all Sector Protection Registers reset to 0

No change to current protection.
No change to current protection.
No change to current protection.
Global Protect all Sector Protection Registers set to 1

1
1
1
1
1

No change to the current protection level. All sectors currently

protected will remain protected and all sectors currently unprotected
will remain unprotected.
0

xxxxxxxx

The Sector Protection Registers are hard-locked and cannot be

changed when the WP pin is LOW and the current state of SPRL is 1.
Therefore, a Global Protect/Unprotect will not occur. In addition, the
SPRL bit cannot be changed (the WP pin must be HIGH in order to
change SPRL back to a 0).

0x0000xx
0x0001xx

0x1110xx
0x1111xx

Global Unprotect all Sector Protection Registers reset to 0

No change to current protection.
No change to current protection.
No change to current protection.
Global Protect all Sector Protection Registers set to 1

0
0
0
0
0

1x0000xx
1x0001xx

1x1110xx
1x1111xx

Global Unprotect all Sector Protection Registers reset to 0

No change to current protection.
No change to current protection.
No change to current protection.
Global Protect all Sector Protection Registers set to 1

1
1
1
1
1

0x0000xx
0x0001xx

0x1110xx
0x1111xx

No change to the current protection level. All sectors

currently protected will remain protected, and all sectors
currently unprotected will remain unprotected.

0
0
0
0
0

1
1x0000xx
1x0001xx

1x1110xx
1x1111xx

The Sector Protection Registers are soft-locked and cannot

be changed when the current state of SPRL is 1. Therefore,
a Global Protect/Unprotect will not occur. However, the
SPRL bit can be changed back to a 0 from a 1 since the WP
pin is HIGH. To perform a Global Protect/Unprotect, the
Write Status Register command must be issued again after
the SPRL bit has been changed from a 1 to a 0.

1
1
1
1
1

Essentially, if the SPRL bit of the Status Register is in the logical 0 state (Sector Protection
Registers are not locked), then writing a 00h to the Status Register will perform a Global Unprotect without changing the state of the SPRL bit. Similarly, writing a 7Fh to the Status Register will
perform a Global Protect and keep the SPRL bit in the logical 0 state. The SPRL bit can, of
course, be changed to a logical 1 by writing an FFh if software-locking or hardware-locking is
desired along with the Global Protect.

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3640BDFLASH10/07

If the desire is to only change the SPRL bit without performing a Global Protect or Global Unprotect, then the system can simply write a 0Fh to the Status Register to change the SPRL bit from
a logical 1 to a logical 0 provided the WP pin is deasserted. Likewise, the system can write an
F0h to change the SPRL bit from a logical 0 to a logical 1 without affecting the current sector
protection status (no changes will be made to the Sector Protection Registers).
When writing to the Status Register, bits 5, 4, 3, and 2 will not actually be modified but will be
decoded by the device for the purposes of the Global Protect and Global Unprotect functions.
Only bit 7, the SPRL bit, will actually be modified. Therefore, when reading the Status Register,
bits 5, 4, 3, and 2 will not reflect the values written to them but will instead indicate the status of
the WP pin and the sector protection status. Please refer to the Read Status Register section
and Table 10-1 on page 23 for details on the Status Register format and what values can be
read for bits 5, 4, 3, and 2.

9.6

Read Sector Protection Registers

The Sector Protection Registers can be read to determine the current software protection status
of each sector. Reading the Sector Protection Registers, however, will not determine the status
of the WP pin.
To read the Sector Protection Register for a particular sector, the CS pin must first be asserted
and the opcode of 3Ch must be clocked in. Once the opcode has been clocked in, three address
bytes designating any address within the sector must be clocked in. After the last address byte
has been clocked in, the device will begin outputting data on the SO pin during every subsequent clock cycle. The data being output will be a repeating byte of either FFh or 00h to denote
the value of the appropriate Sector Protection Register.
Table 9-3.

Read Sector Protection Register Output Data

Output Data

Sector Protection Register Value

00h

Sector Protection Register value is 0 (sector is unprotected).

FFh

Sector Protection Register value is 1 (sector is protected).

Deasserting the CS pin will terminate the read operation and put the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte of
data be read.
In addition to reading the individual Sector Protection Registers, the Software Protection Status
(SWP) bit in the Status Register can be read to determine if all, some, or none of the sectors are
software protected (refer to the Status Register Commands on page 23 for more details).
Figure 9-5.

Read Sector Protection Register

CS
0

10 11 12

29 30 31 32 33 34 35 36 37 38 39 40

SCK
OPCODE

SI

ADDRESS BITS A23-A0

1

MSB

MSB

DATA BYTE

SO

HIGH-IMPEDANCE

D
MSB

20

MSB

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AT26DF161A
9.7

Protected States and the Write Protect (WP) Pin

The WP pin is not linked to the memory array itself and has no direct effect on the protection status of the memory array. Instead, the WP pin, in conjunction with the SPRL (Sector Protection
Registers Locked) bit in the Status Register, is used to control the hardware locking mechanism
of the device. For hardware locking to be active, two conditions must be met the WP pin must
be asserted and the SPRL bit must be in the logical 1 state.
When hardware locking is active, the Sector Protection Registers are locked and the SPRL bit
itself is also locked. Therefore, sectors that are protected will be locked in the protected state,
and sectors that are unprotected will be locked in the unprotected state. These states cannot be
changed as long as hardware locking is active, so the Protect Sector, Unprotect Sector, and
Write Status Register commands will be ignored. In order to modify the protection status of a
sector, the WP pin must first be deasserted, and the SPRL bit in the Status Register must be
reset back to the logical 0 state using the Write Status Register command. When resetting the
SPRL bit back to a logical 0, it is not possible to perform a Global Protect or Global Unprotect
at the same time since the Sector Protection Registers remain soft-locked until after the Write
Status Register command has been executed.
If the WP pin is permanently connected to GND, then once the SPRL bit is set to a logical 1,
the only way to reset the bit back to the logical 0 state is to power-cycle or reset the device.
This allows a system to power-up with all sectors software protected but not hardware locked.
Therefore, sectors can be unprotected and protected as needed and then hardware locked at a
later time by simply setting the SPRL bit in the Status Register.
When the WP pin is deasserted, or if the WP pin is permanently connected to VCC, the SPRL bit
in the Status Register can still be set to a logical 1 to lock the Sector Protection Registers. This
provides a software locking ability to prevent erroneous Protect Sector or Unprotect Sector commands from being processed. When changing the SPRL bit to a logical 1 from a logical 0, it is
also possible to perform a Global Protect or Global Unprotect at the same time by writing the
appropriate values into bits 5, 4, 3, and 2 of the Status Register.
Tables 9-4 and 9-5 detail the various protection and locking states of the device.
Table 9-4.

Sector Protection Register States

WP

Sector Protection Register

n(1)

Sector
n(1)

Unprotected

Protected

X
(Don't Care)
Note:

1. n represents a sector number

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Table 9-5.
WP

22

Hardware and Software Locking

SPRL

Locking

Hardware
Locked

Software
Locked

SPRL Change Allowed

Sector Protection Registers

Can be modified from 0 to 1

Unlocked and modifiable using

the Protect and Unprotect Sector
commands. Global Protect and
Unprotect can also be performed.

Locked

Locked in current state. Protect

and Unprotect Sector commands
will be ignored. Global Protect and
Unprotect cannot be performed.

Can be modified from 0 to 1

Unlocked and modifiable using the

Protect and Unprotect Sector
commands. Global Protect and
Unprotect can also be performed.

Can be modified from 1 to 0

Locked in current state. Protect and

Unprotect Sector commands will be
ignored. Global Protect and Unprotect
cannot be performed.

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10. Status Register Commands
10.1

Read Status Register

The Status Register can be read to determine the device's ready/busy status, as well as the status of many other functions such as Hardware Locking and Software Protection. The Status
Register can be read at any time, including during an internally self-timed program or erase
operation.
To read the Status Register, the CS pin must first be asserted and the opcode of 05h must be
clocked into the device. After the last bit of the opcode has been clocked in, the device will begin
outputting Status Register data on the SO pin during every subsequent clock cycle. After the last
bit (bit 0) of the Status Register has been clocked out, the sequence will repeat itself starting
again with bit 7 as long as the CS pin remains asserted and the SCK pin is being pulsed. The
data in the Status Register is constantly being updated, so each repeating sequence will output
new data.
Deasserting the CS pin will terminate the Read Status Register operation and put the SO pin
into a high-impedance state. The CS pin can be deasserted at any time and does not require
that a full byte of data be read.

Table 10-1.

Status Register Format

Bit(1)
7

3:2

0
Notes:

Name
SPRL

SPM

EPE

WPP

SWP

WEL

RDY/BSY

Sector Protection Registers Locked

Sequential Program Mode Status

Erase/Program Error

Write Protect (WP) Pin Status

Software Protection Status

Write Enable Latch Status

Ready/Busy Status

Type(2)

Description
0

Sector Protection Registers are unlocked (default).

Sector Protection Registers are locked.

Byte/Page Programming Mode (default).

Sequential Programming Mode entered.

Erase or program operation was successful.

Erase or program error detected.

WP is asserted.

WP is deasserted.

00

All sectors are software unprotected (all Sector

Protection Registers are 0).

01

Some sectors are software protected. Read individual

Sector Protection Registers to determine which
sectors are protected.

10

Reserved for future use.

11

All sectors are software protected (all Sector

Protection Registers are 1 default).

Device is not write enabled (default).

Device is write enabled.

Device is ready.

Device is busy with an internal operation.

R/W

1. Only bit 7 of the Status Register will be modified when using the Write Status Register command.
2. R/W = Readable and writable
R = Readable only

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10.1.1

SPRL Bit
The SPRL bit is used to control whether the Sector Protection Registers can be modified or not.
When the SPRL bit is in the logical 1 state, all Sector Protection Registers are locked and cannot be modified with the Protect Sector and Unprotect Sector commands (the device will ignore
these commands). In addition, the Global Protect and Global Unprotect features cannot be performed. Any sectors that are presently protected will remain protected, and any sectors that are
presently unprotected will remain unprotected.
When the SPRL bit is in the logical 0 state, all Sector Protection Registers are unlocked and
can be modified (the Protect Sector and Unprotect Sector commands, as well as the Global Protect and Global Unprotect features, will be processed as normal). The SPRL bit defaults to the
logical 0 state after a power-up or a device reset.
The SPRL bit can be modified freely whenever the WP pin is deasserted. However, if the WP pin
is asserted, then the SPRL bit may only be changed from a logical 0 (Sector Protection Registers are unlocked) to a logical 1 (Sector Protection Registers are locked). In order to reset the
SPRL bit back to a logical 0 using the Write Status Register command, the WP pin will have to
first be deasserted.
The SPRL bit is the only bit of the Status Register that can be user modified via the Write Status
Register command.

10.1.2

SPM Bit
The SPM bit indicates whether the device is in the Byte/Page Program mode or the Sequential
Program Mode. The default state after power-up or device reset is the Byte/Page Program
mode.

10.1.3

EPE Bit
The EPE bit indicates whether the last erase or program operation completed successfully or
not. If at least one byte during the erase or program operation did not erase or program properly,
then the EPE bit will be set to the logical 1 state. The EPE bit will not be set if an erase or program operation aborts for any reason such as an attempt to erase or program a protected region
or if the WEL bit is not set prior to an erase or program operation. The EPE bit will be updated
after every erase and program operation.

10.1.4

WPP Bit
The WPP bit can be read to determine if the WP pin has been asserted or not.

10.1.5

SWP Bits
The SWP bits provide feedback on the software protection status for the device. There are three
possible combinations of the SWP bits that indicate whether none, some, or all of the sectors
have been protected using the Protect Sector command or the Global Protect feature. If the
SWP bits indicate that some of the sectors have been protected, then the individual Sector Protection Registers can be read with the Read Sector Protection Registers command to determine
which sectors are in fact protected.

24

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AT26DF161A
10.1.6

WEL Bit
The WEL bit indicates the current status of the internal Write Enable Latch. When the WEL bit is
in the logical 0 state, the device will not accept any program, erase, Protect Sector, Unprotect
Sector, or Write Status Register commands. The WEL bit defaults to the logical 0 state after a
device power-up or reset. In addition, the WEL bit will be reset to the logical 0 state automatically under the following conditions:
Write Disable operation completes successfully
Write Status Register operation completes successfully or aborts
Protect Sector operation completes successfully or aborts
Unprotect Sector operation completes successfully or aborts
Byte/Page Program operation completes successfully or aborts
Sequential Program Mode reaches highest unprotected memory location
Sequential Program Mode reaches the end of the memory array
Sequential Program Mode aborts
Block Erase operation completes successfully or aborts
Chip Erase operation completes successfully or aborts
Hold condition aborts
If the WEL bit is in the logical 1 state, it will not be reset to a logical 0 if an operation aborts
due to an incomplete or unrecognized opcode being clocked into the device before the CS pin is
deasserted. In order for the WEL bit to be reset when an operation aborts prematurely, the entire
opcode for a program, erase, Protect Sector, Unprotect Sector, or Write Status Register command must have been clocked into the device.

10.1.7

RDY/BSY Bit
The RDY/BSY bit is used to determine whether or not an internal operation, such as a program
or erase, is in progress. To poll the RDY/BSY bit to detect the completion of a program or erase
cycle, new Status Register data must be continually clocked out of the device until the state of
the RDY/BSY bit changes from a logical 1 to a logical 0.
Figure 10-1. Read Status Register

CS
0

10 11 12 13 14 15 16 17 18 19 20 21 22 23 24

SCK
OPCODE

SI

MSB

STATUS REGISTER DATA

SO

HIGH-IMPEDANCE

D
MSB

STATUS REGISTER DATA

D
MSB

MSB

25
3640BDFLASH10/07

10.2

Write Status Register

The Write Status Register command is used to modify the SPRL bit of the Status Register
and/or to perform a Global Protect or Global Unprotect operation. Before the Write Status Register command can be issued, the Write Enable command must have been previously issued to
set the WEL bit in the Status Register to a logical 1.
To issue the Write Status Register command, the CS pin must first be asserted and the opcode
of 01h must be clocked into the device followed by one byte of data. The one byte of data consists of the SPRL bit value, a dont care bit, four data bits to denote whether a Global Protect or
Unprotect should be performed, and two additional dont care bits (see Table 10-2). Any additional data bytes that are sent to the device will be ignored. When the CS pin is deasserted, the
SPRL bit in the Status Register will be modified, and the WEL bit in the Status Register will be
reset back to a logical 0. The values of bits 5, 4, 3, and 2 and the state of the SPRL bit before
the Write Status Register command was executed (the prior state of the SPRL bit) will determine
whether or not a Global Protect or Global Unprotect will be perfomed. Please refer to the Global
Protect/Unprotect section on page 18 for more details.
The complete one byte of data must be clocked into the device before the CS pin is deasserted;
otherwise, the device will abort the operation, the state of the SPRL bit will not change, no
potential Global Protect or Unprotect will be performed, and the WEL bit in the Status Register
will be reset back to the logical 0 state.
If the WP pin is asserted, then the SPRL bit can only be set to a logical 1. If an attempt is made
to reset the SPRL bit to a logical 0 while the WP pin is asserted, then the Write Status Register
command will be ignored, and the WEL bit in the Status Register will be reset back to the logical
0 state. In order to reset the SPRL bit to a logical 0, the WP pin must be deasserted.
Table 10-2.

Write Status Register Format

Bit 7

Bit 6

SPRL

Bit 5

Bit 4

Bit 3

Bit 2

Global Protect/Unprotect

Bit 1

Bit 0

Figure 10-2. Write Status Register

CS
0

10 11 12 13 14 15

SCK
OPCODE

SI

STATUS REGISTER IN
0

MSB

SO

26

MSB

HIGH-IMPEDANCE

AT26DF161A
3640BDFLASH10/07

AT26DF161A
11. Other Commands and Functions
11.1

Read Manufacturer and Device ID

Identification information can be read from the device to enable systems to electronically query
and identify the device while it is in system. The identification method and the command opcode
comply with the JEDEC standard for Manufacturer and Device ID Read Methodology for SPI
Compatible Serial Interface Memory Devices. The type of information that can be read from the
device includes the JEDEC defined Manufacturer ID, the vendor specific Device ID, and the vendor specific Extended Device Information.
To read the identification information, the CS pin must first be asserted and the opcode of 9Fh
must be clocked into the device. After the opcode has been clocked in, the device will begin outputting the identification data on the SO pin during the subsequent clock cycles. The first byte
that will be output will be the Manufacturer ID followed by two bytes of Device ID information.
The fourth byte output will be the Extended Device Information String Length, which will be 00h
indicating that no Extended Device Information follows. After the Extended Device Information
String Length byte is output, the SO pin will go into a high-impedance state; therefore, additional
clock cycles will have no affect on the SO pin and no data will be output. As indicated in the
JEDEC standard, reading the Extended Device Information String Length and any subsequent
data is optional.
Deasserting the CS pin will terminate the Manufacturer and Device ID read operation and put
the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not
require that a full byte of data be read.

Table 11-1.

Manufacturer and Device ID Information

Byte No.

Table 11-2.

Data Type

Value

Manufacturer ID

1Fh

Device ID (Part 1)

46h

Device ID (Part 2)

01h

Extended Device Information String Length

00h

Manufacturer and Device ID Details

Data Type

Bit 7

Bit 6

Bit 5

Bit 4

Bit 3

Bit 2

Bit 1

Bit 0

Hex
Value

Details

JEDEC Assigned Code

Manufacturer ID
0

Family Code

MLC Code

0001 1111 (1Fh for Atmel)

46h

Family Code:
Density Code:

010 (AT26DFxxx series)

00110 (16-Mbit)

01h

MLC Code:
000 (1-bit/cell technology)
Product Version: 00001 (First major revision)

Product Version Code

Device ID (Part 2)
0

JEDEC Code:

Density Code

Device ID (Part 1)
0

1Fh

27
3640BDFLASH10/07

Figure 11-1. Read Manufacturer and Device ID

CS
0

14 15 16

22 23 24

30 31 32

38

SCK
OPCODE

SI

SO

9Fh

HIGH-IMPEDANCE

Note: Each transition

11.2

1Fh

46h

01h

00h

MANUFACTURER ID

DEVICE ID
BYTE 1

DEVICE ID
BYTE 2

EXTENDED
DEVICE
INFORMATION
STRING LENGTH

shown for SI and SO represents one byte (8 bits)

Deep Power-down
During normal operation, the device will be placed in the standby mode to consume less power
as long as the CS pin remains deasserted and no internal operation is in progress. The Deep
Power-down command offers the ability to place the device into an even lower power consumption state called the Deep Power-down mode.
When the device is in the Deep Power-down mode, all commands including the Read Status
Register command will be ignored with the exception of the Resume from Deep Power-down
command. Since all commands will be ignored, the mode can be used as an extra protection
mechanism against program and erase operations.
Entering the Deep Power-down mode is accomplished by simply asserting the CS pin, clocking
in the opcode of B9h, and then deasserting the CS pin. Any additional data clocked into the
device after the opcode will be ignored. When the CS pin is deasserted, the device will enter the
Deep Power-down mode within the maximum time of tEDPD.
The complete opcode must be clocked in before the CS pin is deasserted, and the CS pin must
be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort
the operation and return to the standby mode once the CS pin is deasserted. In addition, the
device will default to the standby mode after a power-cycle or a device reset.

The Deep Power-down command will be ignored if an internally self-timed operation such as a
program or erase cycle is in progress. The Deep Power-down command must be reissued after
the internally self-timed operation has been completed in order for the device to enter the Deep
Power-down mode.

28

AT26DF161A
3640BDFLASH10/07

AT26DF161A
Figure 11-2. Deep Power-down
CS
tEDPD
0

SCK
OPCODE

SI

MSB

SO

HIGH-IMPEDANCE

Active Current

ICC
Standby Mode Current

11.3

Deep Power-Down Mode Current

Resume from Deep Power-down

In order exit the Deep Power-down mode and resume normal device operation, the Resume
from Deep Power-down command must be issued. The Resume from Deep Power-down command is the only command that the device will recognize while in the Deep Power-down mode.
To resume from the Deep Power-down mode, the CS pin must first be asserted and opcode of
ABh must be clocked into the device. Any additional data clocked into the device after the
opcode will be ignored. When the CS pin is deasserted, the device will exit the Deep Powerdown mode within the maximum time of tRDPD and return to the standby mode. After the device
has returned to the standby mode, normal command operations such as Read Array can be
resumed.
If the complete opcode is not clocked in before the CS pin is deasserted, or if the CS pin is not
deasserted on an even byte boundary (multiples of eight bits), then the device will abort the
operation and return to the Deep Power-down mode.
Figure 11-3. Resume from Deep Power-down
CS
tRDPD
0

SCK
OPCODE

SI

MSB

SO

HIGH-IMPEDANCE

Active Current

ICC
Deep Power-Down Mode Current

Standby Mode Current

29
3640BDFLASH10/07

11.4

Hold
The HOLD pin is used to pause the serial communication with the device without having to stop
or reset the clock sequence. The Hold mode, however, does not have an affect on any internally
self-timed operations such as a program or erase cycle. Therefore, if an erase cycle is in
progress, asserting the HOLD pin will not pause the operation, and the erase cycle will continue
until it is finished.
The Hold mode can only be entered while the CS pin is asserted. The Hold mode is activated
simply by asserting the HOLD pin during the SCK low pulse. If the HOLD pin is asserted during
the SCK high pulse, then the Hold mode won't be started until the beginning of the next SCK low
pulse. The device will remain in the Hold mode as long as the HOLD pin and CS pin are
asserted.
While in the Hold mode, the SO pin will be in a high-impedance state. In addition, both the SI pin
and the SCK pin will be ignored. The WP pin, however, can still be asserted or deasserted while
in the Hold mode.
To end the Hold mode and resume serial communication, the HOLD pin must be deasserted
during the SCK low pulse. If the HOLD pin is deasserted during the SCK high pulse, then the
Hold mode won't end until the beginning of the next SCK low pulse.
If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may
have been started will be aborted, and the device will reset the WEL bit in the Status Register
back to the logical 0 state.

Figure 11-4. Hold Mode

CS

SCK

HOLD

Hold

30

Hold

Hold

AT26DF161A
3640BDFLASH10/07

AT26DF161A
12. Electrical Specifications
12.1

Absolute Maximum Ratings*

Temperature under Bias ................................ -55C to +125C

*NOTICE:

Storage Temperature ..................................... -65C to +150C

All Input Voltages
(including NC Pins)
with Respect to Ground .....................................-0.6V to +4.1V
All Output Voltages
with Respect to Ground .............................-0.6V to VCC + 0.5V

12.2

Stresses beyond those listed under Absolute

Maximum Ratings may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.

DC and AC Operating Range

AT26DF161A

Operating Temperature (Case)

Ind.

-40C to 85C

VCC Power Supply

12.3

2.7V to 3.6V

DC Characteristics

Symbol

Parameter

Condition

ISB

Standby Current

IDPD

Deep Power-down Current

ICC1

Active Current, Read Operation

Min

Typ

Max

Units

CS, WP, HOLD = VCC,

all inputs at CMOS levels

25

35

CS, WP, HOLD = VCC,

all inputs at CMOS levels

10

15

f = 70 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max

11

16

f = 66 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max

10

15

f = 50 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max

14

f = 33 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max

12

f = 20 MHz; IOUT = 0 mA;

CS = VIL, VCC = Max

10

mA

ICC2

Active Current, Program Operation

CS = VCC, VCC = Max

12

18

mA

ICC3

Active Current, Erase Operation

CS = VCC, VCC = Max

14

20

mA

ILI

Input Leakage Current

VIN = CMOS levels

ILO

Output Leakage Current

VOUT = CMOS levels

VIL

Input Low Voltage

0.3 x VCC

VIH

Input High Voltage

VOL

Output Low Voltage

IOL = 1.6 mA; VCC = Min

VOH

Output High Voltage

IOH = -100 A

0.7 x VCC

V
0.4

VCC - 0.2V

V
V

31
3640BDFLASH10/07

12.4

AC Characteristics

Symbol

Parameter

fSCK

Max

Units

Serial Clock (SCK) Frequency

70

MHz

fRDLF

SCK Frequency for Read Array (Low Frequency - 03h opcode)

33

MHz

tSCKH

SCK High Time

6.4

ns

SCK Low Time

6.4

ns

SCK Rise Time, Peak-to-Peak (Slew Rate)

0.1

V/ns

tSCKF(1)

SCK Fall Time, Peak-to-Peak (Slew Rate)

0.1

V/ns

tCSH

Chip Select High Time

50

ns

tCSLS

Chip Select Low Setup Time (relative to SCK)

ns

tCSLH

Chip Select Low Hold Time (relative to SCK)

ns

tCSHS

Chip Select High Setup Time (relative to SCK)

ns

tCSHH

Chip Select High Hold Time (relative to SCK)

ns

tDS

Data In Setup Time

ns

tDH

Data In Hold Time

ns

tDIS(1)

Output Disable Time

ns

tV(2)

Output Valid Time

ns

tOH

Output Hold Time

ns

tHLS

HOLD Low Setup Time (relative to SCK)

ns

tHLH

HOLD Low Hold Time (relative to SCK)

ns

tHHS

HOLD High Setup Time (relative to SCK)

ns

tHHH

HOLD High Hold Time (relative to SCK)

ns

tHLQZ(1)

HOLD Low to Output High-Z

ns

tHHQX(1)

HOLD High to Output Low-Z

ns

tWPS(1)(3)

Write Protect Setup Time

20

ns

Write Protect Hold Time

100

ns

tSCKL
tSCKR

tWPH

(1)

(1)(3)

Min

tSECP(1)

Sector Protect Time (from Chip Select High)

20

ns

tSECUP(1)

Sector Unprotect Time (from Chip Select High)

20

ns

Chip Select High to Deep Power-down

Chip Select High to Standby Mode

tEDPD

(1)

tRDPD(1)
Notes:

1. Not 100% tested (value guaranteed by design and characterization).

2. 15 pF load at 70 MHz, 30 pF load at 66 MHz.
3. Only applicable as a constraint for the Write Status Register command when SPRL = 1

32

AT26DF161A
3640BDFLASH10/07

AT26DF161A
12.5

Program and Erase Characteristics

Symbol

Parameter

tPP(1)

Page Program Time (256 Bytes)

tBP

Byte Program Time

tBLKE(1)

Note:

(2)

Typ

Max

Units

1.2

ms

Block Erase Time

tCHPE(1)(2)
tWRSR

Min

4 Kbytes

50

200

32 Kbytes

250

600

64 Kbytes

400

950

12

28

sec

200

ns

Chip Erase Time

Write Status Register Time

ms

1. Maximum values indicate worst-case performance after 100,000 erase/program cycles.

2. Not 100% tested (value guaranteed by design and characterization).

12.6

Power-up Conditions

Parameter

Min

Minimum VCC to Chip Select Low Time

50

Max

Power-up Device Delay Before Program or Erase Allowed

Power-on Reset Voltage

12.7

Units

1.5

10

ms

2.5

Input Test Waveforms and Measurement Levels

AC
DRIVING
LEVELS

2.4V
1.5V
0.45V

AC
MEASUREMENT
LEVEL

tR, tF < 2 ns (10% to 90%)

12.8

Output Test Load

DEVICE
UNDER
TEST
30 pF

33
3640BDFLASH10/07

13. Waveforms
Figure 13-1. Serial Input Timing
tCSH

CS
tCSLH
tSCKL

tCSLS
tSCKH

tCSHH
tCSHS

SCK
tDS

SI

SO

tDH
MSB

LSB

MSB

HIGH-IMPEDANCE

Figure 13-2. Serial Output Timing

CS
tSCKH

tSCKL

tDIS

SCK

SI
tOH
tV

tV

SO

Figure 13-3. HOLD Timing Serial Input

CS

SCK
tHHH

tHLS
tHLH

tHHS

HOLD

SI

SO

34

HIGH-IMPEDANCE

AT26DF161A
3640BDFLASH10/07

AT26DF161A
Figure 13-4. HOLD Timing Serial Output
CS

SCK
tHHH

tHLS
tHLH

tHHS

HOLD

SI
tHLQZ

tHHQX

SO

Figure 13-5. WP Timing for Write Status Register Command When SPRL = 1

CS
tWPH

tWPS

WP

SCK

SI

0
MSB OF
WRITE STATUS REGISTER
OPCODE

SO

MSB

LSB OF
WRITE STATUS REGISTER
DATA BYTE

MSB OF
NEXT OPCODE

HIGH-IMPEDANCE

35
3640BDFLASH10/07

14. Ordering Information

14.1

Green Package Options (Pb/Halide-free/RoHS Compliant)

fSCK (MHz)

70

Ordering Code

Package

AT26DF161A-SSU

8S1

AT26DF161A-SU

8S2

AT26DF161A-MU

8M1-A

Operation Range

Industrial
(-40C to 85C)

Package Type
8S1

8-lead, 0.150" Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC)

8S2

8-lead, 0.209 Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC)

8M1-A

8-contact, 5 x 6 mm Very Thin Micro Lead-frame Package (MLF)

36

AT26DF161A
3640BDFLASH10/07

AT26DF161A
15. Packaging Information
15.1

8S1 JEDEC SOIC

C

E1

TOP VIEW
END VIEW
e

b
COMMON DIMENSIONS
(Unit of Measure = mm)

A
A1

SYMBOL

MIN

NOM

MAX

A1

0.10

0.25

NOTE

SIDE VIEW

Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc.

3/17/05

1150 E. Cheyenne Mtn. Blvd.

Colorado Springs, CO 80906

TITLE
8S1, 8-lead (0.150" Wide Body), Plastic Gull Wing
Small Outline (JEDEC SOIC)

DRAWING NO.

REV.

8S1

37
3640BDFLASH10/07

15.2

8S2 EIAJ SOIC

C

E1

L
N

TOP VIEW

END VIEW
e

COMMON DIMENSIONS
(Unit of Measure = mm)

A
SYMBOL

A1

SIDE VIEW

NOM

MAX

NOTE

1.70

2.16

A1

0.05

0.25

0.35

0.48

0.15

0.35

5.13

5.35

E1

5.18

5.40

7.70

8.26

0.51

0.85

e
Notes: 1.
2.
3.
4.
5.

MIN

1.27 BSC

2, 3

This drawing is for general information only; refer to EIAJ Drawing EDR-7320 for additional information.
Mismatch of the upper and lower dies and resin burrs are not included.
It is recommended that upper and lower cavities be equal. If they are different, the larger dimension shall be regarded.
Determines the true geometric position.
Values b,C apply to plated terminal. The standard thickness of the plating layer shall measure between 0.007 to .021 mm.

4/7/06

38

2325 Orchard Parkway

San Jose, CA 95131

TITLE
8S2, 8-lead, 0.209" Body, Plastic Small
Outline Package (EIAJ)

DRAWING NO.
8S2

REV.
D

AT26DF161A
3640BDFLASH10/07

AT26DF161A
15.3

8M1-A MLF

D
D1

0
Pin 1 ID

E1

SIDE VIEW

TOP VIEW

A3
A2
A1
A
0.08 C

D2

Pin #1 Notch
(0.20 R)

COMMON DIMENSIONS
(Unit of Measure = mm)

0.45

E2

SYMBOL

MIN

NOM

0.85

1.00

A1

0.05

A2

BOTTOM VIEW

NOTE

0.65 TYP

A3
b

MAX

0.20 TYP
0.35

0.40

0.48

5.90

6.00

6.10

D1

5.70

5.75

5.80

D2

3.20

3.40

3.60

4.90

5.00

5.10

E1

4.70

4.75

4.80

E2

3.80

4.00

4.20

1.27

0.50

0.60

0.75

12o

0.25

9/8/06

2325 Orchard Parkway

San Jose, CA 95131

TITLE
8M1-A, 8-pad, 6 x 5 x 1.00 mm Body, Very Thin Dual Flat Package
No Lead (MLF)

DRAWING NO.
8M1-A

REV.
C

39
3640BDFLASH10/07

16. Revision History

40

Revision Level Release Date

History

A November 2006

Initial Release

B October 2007

Added HOLD to device block diagram.

AT26DF161A
3640BDFLASH10/07

Headquarters

International

Atmel Corporation
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San Jose, CA 95131
USA
Tel: 1(408) 441-0311
Fax: 1(408) 487-2600

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Sales Contact
www.atmel.com/contacts

Product Contact
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3640BDFLASH10/07