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    Isc Silicon PNP Power Transistor: INCHANGE Semiconductor

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    Testronicparts
    This document specifies the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB526. It lists the transistor's absolute maximum ratings including a collector-emitter breakdown voltage of -80V minimum. It is designed for high power driver applications in audio frequency circuits. The document also provides the transistor's electrical characteristics under test conditions, such as a collector-emitter saturation voltage of -1.0V minimum and a typical DC current gain of 55-300.

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    Isc Silicon PNP Power Transistor: INCHANGE Semiconductor

    Uploaded by

    Testronicparts
    21 views2 pages
    This document specifies the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB526. It lists the transistor's absolute maximum ratings including a collector-emitter breakdown voltage of -80V minimum. It is designed for high power driver applications in audio frequency circuits. The document also provides the transistor's electrical characteristics under test conditions, such as a collector-emitter saturation voltage of -1.0V minimum and a typical DC current gain of 55-300.

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    esquemático

    Original Title

    2SB526

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    This document specifies the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB526. It lists the transistor's absolute maximum ratings including a collector-emitter breakdown voltage of -80V minimum. It is designed for high power driver applications in audio frequency circuits. The document also provides the transistor's electrical characteristics under test conditions, such as a collector-emitter saturation voltage of -1.0V minimum and a typical DC current gain of 55-300.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    21 views2 pages

    Isc Silicon PNP Power Transistor: INCHANGE Semiconductor

    Uploaded by

    Testronicparts
    This document specifies the INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB526. It lists the transistor's absolute maximum ratings including a collector-emitter breakdown voltage of -80V minimum. It is designed for high power driver applications in audio frequency circuits. The document also provides the transistor's electrical characteristics under test conditions, such as a collector-emitter saturation voltage of -1.0V minimum and a typical DC current gain of 55-300.

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    isc Product Specification

    INCHANGE Semiconductor

    isc Silicon PNP Power Transistor

    2SB526

    DESCRIPTION
    Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min)
    Good Linearity of hFE
    Complement to Type 2SD356

    APPLICATIONS
    Designed for AF high power dirver applications.

    ABSOLUTE MAXIMUM RATINGS(Ta=25)


    SYMBOL

    PARAMETER

    VALUE

    UNIT

    VCBO

    Collector-Base Voltage

    -90

    VCEO

    Collector-Emitter Voltage

    -80

    VEBO

    Emitter-Base Voltage

    -5

    -0.8

    IC

    Collector Current-Continuous
    Collector Power Dissipation
    @ Ta=25

    PC

    TJ

    Tstg

    W
    Collector Power Dissipation
    @ TC=25

    10

    Junction Temperature

    150

    -55~150

    Storage Temperature Range

    isc websitewww.iscsemi.cn

    isc & iscsemi is registered trademark

    isc Product Specification

    INCHANGE Semiconductor

    isc Silicon PNP Power Transistor

    2SB526

    ELECTRICAL CHARACTERISTICS
    TC=25 unless otherwise specified
    SYMBOL

    PARAMETER

    V(BR)CEO

    Collector-Emitter Breakdown Voltage

    IC= -10mA; RBE=

    -80

    V(BR)CBO

    Collector-Base Breakdown Voltage

    IC= -1mA; IE= 0

    -90

    V(BR)EBO

    Emitter-Base Breakdown Voltage

    IE= -1mA; IC= 0

    -5

    VCE(sat)

    Collector-Emitter Saturation Voltage

    IC= -0.3A; IB= -30mA

    VBE(on)

    Base-Emitter On Voltage

    IC= -50mA; VCE= -4V

    ICEO

    Collector Cutoff Current

    VCE= -80V; RBE=

    -1

    mA

    IEBO

    Emitter Cutoff Current

    VEB= -5V; IC= 0

    -10

    hFE

    DC Current Gain

    IC= -0.3A; VCE= -4V

    CONDITIONS

    MIN

    TYP.

    MAX

    -1.0

    0.7

    55

    UNIT

    300

    hFE Classifications
    C

    55-110

    90-180

    150-300

    isc websitewww.iscsemi.cn

    isc & iscsemi is registered trademark

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