A Compact Pi-Structure Dual Band Transformer: Progress in Electromagnetics Research, PIER 88, 121-134, 2008
A Compact Pi-Structure Dual Band Transformer: Progress in Electromagnetics Research, PIER 88, 121-134, 2008
A Compact Pi-Structure Dual Band Transformer: Progress in Electromagnetics Research, PIER 88, 121-134, 2008
1. INTRODUCTION
With the development of mobile communication, the utility ratio of
the frequency band has been improved dramatically. In many cases,
devices are required to work at two dierent frequencies (namely dual
band)[1-5]. Based on the principle of two-section transformers, Chow
et al. proposes a novel transformer of one-third wavelength in two
sections for a frequency and its rst harmonic [6]. However, the
performance of the transformer designed by the inexact method in
[6] is deteriorated by an elevating ratio between the input and load
impedance. And then, [7] and [8] represent comprehensive analysis and
exact solutions of exible dual band transformer. Recently, this small
dual band transformer has been applied in dual band power dividers
[911] and unequal dual band power dividers [12, 13].
In this paper, we present a novel Pi-structure transformer
operating at arbitrary dual band which is more compact than one
in [8]. By solving the matching equations, it is found that there are
122
Z 1 , 1
Z0
Z 2 , 2
Z3 , 3
RL
Y2
Y3
1
,
Z1
Y2 = g2 + jb2 =
Y2 = Y1
Y3 + jY1 tan(1 )
,
Y1 + jY3 tan(1 )
(2)
123
g3 + j(b3 + Y1 tan(1 ))
.
Y1 b3 tan(1 ) + jg3 tan(1 )
(3)
Separating and rearranging the real and imagine parts of (3), the
equations can be obtained as
Y1 (g2 g3 ) = (g2 b3 g3 b2 ) tan(1 ),
(4)
Y1 (b2 + b3 ) = b2 b3 + g2 g3 Y12 tan(1 ).
Substituting (1) into (4), and after some straightforward manipulation,
Equation (4) in terms of characteristic impedances can be expressed
as,
RL
,
Z0
z1 =
Z1
,
Z0
z2 =
Z2
,
Z0
z3 =
Z3
.
Z0
Substituting (6) into (5), the Equation (5) can be simplied as,
(6)
(7)
124
n = 1, 2, 3.
(8)
n = 1, 2, 3. m N + .
(9)
1
1 ,
2(1 + p)
(10)
.
(11)
= tan 1 = tan 2 = tan 3 = tan
1+p
It is necessary to note that the li , i = 1, 2, 3 can also be unequal (For
example: l1 = ml2 ), as long as the nal expression (7) is unchanged
with operating at both f1 and f2 . Considering that the corresponding
physical lengths are large, this unequal li case will not be discussed in
the following sections.
3.2. The Characteristic Impedances Discussion
Using (11), (7) can be expressed as
z2 z3 (k 1) = z1 2 (z2 k z3 ),
z1 k(z3 + z2 ) = (z12 k)z2 z3 + z12 k2 .
(12)
125
To assure z2 and z3 are positive and real, the values can be obtained
as,
2 )2
1
+
(1
z
z
1
1
, 0 < z1 1.
2
(z1 1)
(14)
z2 = z 3 =
z1 1 1 + (1 z12 )2
2
1+
.
, 1 < z1
2
2
(z1 1)
B. Another case: when k = 1, namely, Z0 = RL , (12) can be
rewritten as,
Cz22 + Dz2 + E = 0,
(15)
z3 = Az2 + B.
where
z12 k2 k 2 2 k 2 + k
z1 k2 (k 1)
,
B
=
,
2
2
z1 2 k2 + k 2 k
z1 2 k2 + k 2 k
C = A(k 1), D = 2B, E = z1 2 B.
A=
B B 2 CE
z2 =
,
A(k 1)
z3 = Az2 + B.
(16)
2 1 (k+2 kz 2 2 )
1
k+2 k1
,
0
<
z
2
z12 2 k2 k+1
z2 =
2 1
2 kz 2 2 )
(k+
z
2 k1
1
1
k+
k+2 k
,
<
z
<
.
1
2
2
2
z1 2 k2 k+1
z3 = Az2 + B.
(17)
Obviously, there are two solutions in (14) and (17) in dierent cases.
Considering the practical microwave implementation, one of them will
be discarded, which will be discussed in the following.
126
.
(18a)
,
0
<
z
z2 =
1
2
z12 2 k2 k + 1
z1 2 1+
k+2 kz12 2
k+2 k1
k+2 k
,
<z
<
.(18b)
z2 =
1
2
2
z12 2 k2 k+1
If z1 is in the scope of (18b), the subtraction of (18b) and (18a) is
k + 2 k z12 2
2z1 2
> 0,
(19)
z2 =
z12 2 k2 k + 1
(19) means that the value of (18b) is larger
of (18a) when
than one
z1 is the same. Especially, when z1 k + 2 k 1/ 2 in (18b),
z2 can be obtained. But in (18a), z2 will be a positive and real
number, which is more practical in microwave engineering. Considering
practical realization in terms of microstrip line, the values of z1 , z2 , z3
should be in the adequate range. Apparently, (18b) is not suitable to
practical design because the characteristic impedances are very high.
So, we only choose (18a) as the nal design for dierent values of z1 in
this paper.
Here, the aforementioned discussion can be summarized. If z1 is
known and in the range of (20a), the nal generalized design equations
of z2 and z3 can be expressed as:
k + 2 k
0 < z1
,
(20a)
2
k + 2 k z12 2
z1 2 1
z2 =
,
(20b)
z12 2 k2 k + 1
kz1 2 k k + 2 k z12 2
z3 =
.
(20c)
z12 2 k2 + k 2 k
So, we can obtain dierent impedances solutions with dierent
values of z1 according to (20). When the values of impedances are
very large or small, they can be adjusted using dierent values of z1 .
This is the main advantage of this proposed dual band transformer.
127
k
k2
, z3 =
.
(21)
z1 = k, z2 =
1+ k
1+ k
When z1 = k(1 + 2 ) 1/ 2 , (k 1), (20) can be simplied as
the following equation based on the limitation characteristic,
k(1 + 2 ) 1
z1 2
kz1 2
z1 =
,
z
=
=
,
z
.
(22)
2
3
2
2
k+1
When z1 = k(1 + 2 )/ 2 , (20) can become as follows,
k(1 + 2 )
, z2 = z3 = z1 2 .
(23)
z1 =
2
This special case including (23) is the same with the results of [14]
and [15], and (23) has been applied in dual band couplers and power
dividers in compact structure.
4. ANALYSIS OF SOLUTIONS
In this section, using (11), we analyze the characteristics of (20) against
dierent p and k.
4.1. Single Matching Band
The p will be very large when f2
f1 . Considering /(1 +
p) 0, the electrical length of this transformer will become very
small. When f2 , the total transformer will be considered as
a lumped inductance and capacitance transforming network, namely
the resistances are connected directly with lumped components. This
characteristic is similar with the dual band transformer in two sections
when f2 [8].
In addition, in the case that p is very large, we can increase the
length of transmission lines by choosing a larger m to avoid too small
physical length,
l=
m
1 .
2(1 + p)
(24)
128
m
.
= tan
1+p
(25)
Based on (24), the value of m can increase along with the value of p, it
is suitable that m satises 4m < p + 5 [9] because the physical length
should be kept in the adequate range.
4.2. Equal Dual Band and Quarter Wavelength Transformer
If f2 = f1 , then p = 1 and , the electrical length is /2 which
stands for one quarter wavelength of f1 . Based on the results of (21)
(26)
(27)
129
Case 3
z1 = 2.2
2.978
5.061
-5
-5
-10
-10
Case 4
z1 = 4/ 3
6.928
6.928
| |(dB )
| |(dB )
z2
z3
Case 2
z1 = 2
2.000
4.000
-15
-15
Case 1
Case 2
Case 3
Case 4
-20
-25
0.5
1.5
Frequency (GHz)
2.5
5.2. Example 2
Case
Case
Case
Case
-20
-25
0.5
1
2
3
4
1.5
Frequency (GHz)
2.5
130
z1
z2 = z 3
Case 1
k=1
1.155
3.464
Case 2
k=2
1.633
4.899
Case 3
k=3
2.000
6.000
Case 4
k=5
2.582
7.746
5.3. Example 3
Let us consider the example f1 = 1 GHz, f2 = pf1 , k = 4, which two
kinds of the parameter p (p is close to 1 (A) and p is very large (B))
are used, the special solution (23) is only considered.
Table 3. Solutions of Example 3(A).
z1
z2 = z 3
l/1
Case 1
p=1
2.000
1/4
Case 2
p = 1.5
2.103
19.919
1/5
Case 3
p = 2.5
2.558
4.022
1/7
Case 4
p=3
2.828
2.828
1/8
131
Case 3
p = 20
13.419
0.305
1/42
-5
-5
-10
-10
||(dB )
| |( dB )
z1
z2 = z 3
l/1
Case 2
p=9
6.472
0.683
1/20
-15
Case
Case
Case
Case
-20
-25
0.5
Case
Case
Case
Case
-15
1.5
1
2
3
4
Case 4
p = 100
64.309
0.062
1/202
1
2
3
4
-20
2
2.5
Frequency
3.5
-25
4
5
6
7
Frequency (GHz)
10
5.4. Example 4
Let us consider the example f1 = 1 GHz, f2 = pf1 , k = 4.
Dierent from example 3(A), the solution (21) is chosen and it can
be obtained that z1 = 2. The other parameters are listed in Table 5.
The corresponding reection characteristics are shown in Fig. 7.
Comparing with the results of the example 3(A), the transformer with
lower impedances in this example is easier to be fabricated, but the
bandwidth will become narrower slightly.
Table 5. Solutions of Example 4.
z2
z3
l/1
Case 1
p = 1.5
6.315
12.630
1/5
Case 2
p = 2.5
1.048
2.097
1/7
Case 3
p=3
0.667
1.333
1/8
132
-5
| |(dB )
-10
-15
-20
-25
0.5
Case 1
Case 2
Case 3
1.5
2
2.5
Frequency (GHz)
3.5
6. CONCLUSIONS
A novel compact Pi-structure transformer operating at arbitrary dual
band has been presented. This design can shorten the horizontal
length of a traditional Monzons two-section dual band transformer
by 50%. In addition, the number of solutions of this transformer can
be innite, which increases the exibility of applications. This dual
band transformer will provide various applicable advances in compact
dual band components including antennas matching, power dividers
and couplers.
ACKNOWLEDGMENT
This work was supported in part by National High Technology
Research and Development Program of China (863 Program,
No. 2008AA01Z211) and Project of Guangdong Province Education
Ministry Demonstration Base of Combining Production, Teaching
and Research (No. 2007B090200012) and National Natural Science
Foundation of China (No. 60736002).
REFERENCES
1. Shynu, S. V., G. Augustin, C. K. Aanandan, P. Mohanan,
and K. Vasudevan, Design of compact recongurable dual
frequency microstrip antennas using varactor diodes, Progress
In Electromagnetics Research, PIER 60, 197205, 2006.
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