Senkottai Village, Madurai - Sivagangai Main Road, Madurai - 625 020. (An ISO 9001:2008 Certified Institution)
Senkottai Village, Madurai - Sivagangai Main Road, Madurai - 625 020. (An ISO 9001:2008 Certified Institution)
Senkottai Village, Madurai - Sivagangai Main Road, Madurai - 625 020. (An ISO 9001:2008 Certified Institution)
QUESTION BANK
EC6201 ELECTRONIC DEVICES
SEMESTER: II / ECE
n - Mobility of electron
E - applied electric field
Drift current density due to holes.
Jp = q p p E
Where,
Jn - drift current density due to holes
q - Charge of holes
p - Mobility of holes
E - applied electric field
5.Define the term diffusion current?
A concentration gradient exists, if the number of either electrons or holes is greater in one
region of a semiconductor as compared to the rest of the region. The holes and electron
tend to move from region of higher concentration to the region of lower concentration.
This process in called diffusion and the current produced due this movement is diffusion
current.
6.Give the expression for diffusion current density
Diffusion current density due to electrons
Jn = q Dn dn / dx
Where
Jn - diffusion current density due to electron
q - Charge of an electron
Dn diffusion constant for electron
dn / dx concentration gradient
Diffusion current density due to holes
Jp = - q Dp dp / dx
Where
Jp - diffusion current density due to holes
q - Charge of a hole
Dp diffusion constant for hole
dn / dx concentration gradient
7.Differentiate between drift and diffusion currents.
Drift current
1. It is developed due to potential gradient.
2. This phenomenon is found both in metals and semiconductors
Diffusion current
1. It is developed due to charge concentration gradient.
2. This phenomenon is found only in metals
8.What is depletion region in PN junction?
The region around the junction from which the mobile charge carriers ( electrons and
holes) are depleted is called as depletion region.since this region has immobile ions, which are
electrically charged , the depletion region is also known as space charge region.
9.What is barrier potential?
Because of the oppositely charged ions present on both sides of PN junction an electric
potential is established across the junction even without any external voltage source which is
termed as barrier potential.
10.What is Reverse saturation current?
The current due to the minority carriers in reverse bias is said to be reverse saturation
current. This current is independent of the value of the reverse bias voltage.
11.What is the total current at the junction of pn junction diode?
The total in the junction is due to the hole current entering the n material and theelectron
current entering the p material. Total current is given by
I = Ipn(0) + Inp(0)
Where,
I Total current
Ipn(0) - hole current entering the n material
Inp(0) - electron current entering the p material
12.Give the diode current equation?
The diode current equation relating the voltage V and current I is given by
where
I diode current
Io diode reverse saturation current at room temperature
V external voltage applied to the diode
- a constant, 1 for Ge and 2 for Si
16.Define PIV.
Peak inverse voltage is the maximum reverse voltage that can be applied
to the PN junction without damage to the junction.
17.Draw V-I characteristics of pn diode
TTL is notable for being a widespread integrated circuit (IC) family used in many
applications such as computers, industrial controls, test equipment and instrumentation,
consumer electronics, synthesizers, etc.
11.In a CR connection, the value of IE is 6.28 mA and the collector current Ic is 6.20 mA.
Determine d.c. current gain.
12. The transistor has IE = 10 mA and = 0.98. Find the value of base and collector
currents.
13. If a transistor has a of 0.97 find the value of . If =200, find the value of .
The BJT is also the choice for demanding analog circuits, especially for very-highfrequency applications, such as radio-frequency circuits for wireless systems.
Bipolar transistors can be combined with MOSFETs in an integrated circuit by using a
BiCMOS process of wafer fabrication to create circuits that take advantage of the application
strengths of both types of transistor.
PART B
1.Explain the operation of NPN and PNP transistors (8)
2.Explain the input and output characteristics of a transistor in CB configuration. (10)
3.Draw the circuit diagram of a NPN transistor CE configuration and the input and output
characteristics. Also define its operating regions. (12)
4. Explain the input and output characteristics of a transistor in CC configuration. (10)
5.Give the comparison of CE,CB,CC configuration. (6)
6.Give the relationship between , and of a transistor (6)
7.Explain briefly about the Gummel Poon model (10)
8. How multi emitter transistor is working? Explain it with neat diagram. (12)
9.Explain details about the Ebers Moll model. (8)
UNIT III
FIELD EFFECT TRANSISTORS
PART A
1.Why it is called field effect transistor?
The drain current ID of the transistor is controlled by the electric field that extends into
the channel due to reverse biased voltage applied to the gate, hence this device has been given
the name Field Effect Transistor.
2.Why FET is called voltage controlled device.
FET the value of the current depends upon the value of the voltage applied at the gate and
drain. So it is known as voltage controlled device.
3.Define the term threshold voltage.
The threshold voltage, commonly abbreviated as Vth, of a field-effect transistor(FET) is
the value of the gatesource voltage when the conducting channel just begins to connect the
source and drain contacts of the transistor, allowing significant current.
The threshold voltage of a junction field-effect transistor is often called pinch-off voltage
instead, which is somewhat confusing since "pinch off" for an insulated-gate field-effect
transistor is used to refer to the channel pinching that leads to current saturation behaviour under
high sourcedrain bias, even though the current is never off. The term "threshold voltage" is
unambiguous and refers to the same concept in any field-effect transistor.
PART B
1.Explain the operation of JFET and derive the drain and transfer characteristics. (16)
2.With neat diagram explain the operation of MOSFET in Depletion mode and derive its current
equations(16)
3With neat diagram explain the operation of MOSFET in Enhancement mode and derive its
current equations(16)
4.Give some characteristics of MOSFET. (8)
5.Explain the operation of dual gate MOSFET (8)
UNIT IV
SPECIAL SEMICONDUCTOR DEVICES
PART A
1.What is a metal semiconductor contact?
A metal semiconductor contact is a contact between a metal and a semiconductor which
according to the doping level and requirement may act as a rectifying diode or just a simple
contact between a semiconductor device and the outside world.
2.Define contact potential in metal semiconductor contact.
The difference of potential between the work function of metal and the work function of
semiconductor in a metal semiconductor contact is termed as contact potential.
3.Give the symbol and structure of schottky diode.
Schottky diode
1. Here the contact is established between the
semiconductor and metal
2. current conduction is only due to
majority carriers
3. Small reverse recovery time
4. Barrier potential is low about 0.25 V
5. switching speed is high
6. can operate at very high frequency (>
300MHz)
This is the equivalent circuit of tunnel diode when biased in negative resistance region.
At higher frequencies the series R and L can be ignored.
Hence equivalent circuit can be reduced to parallel combination of junction capacitance and
negative resistance.
14.What is varactor diode?
A varactor diode is best explained as a variable capacitor. Think of the depletion region
as a variable dielectric. The diode is placed in reverse bias. The dielectric is adjusted by
reverse bias voltage changes.
Junction capacitance is present in all reverse biased diodes because of the depletion region.
Junction capacitance is optimized in a varactor diode and is used for high frequencies and
switching applications.
Varactor diodes are often used for electronic tuning applications in FM radios and televisions.
PART B
1.Explain about the ohmic contact of metal semiconductor junction (8)
2.Explain the operation of zener diode and how it is used as a voltage regulator. (12)
3.Explain the operation of tunnel diode and draw its equivalent circuit. (12)
4.With neat diagram give the working principle of LASER diode (8)
5.Explain the operation of varactor diode (8)
6.With neat diagram explain about varactor diode. (8)
UNIT V
POWER DEVICES AND DISPLAY DEVICES
PART A
1.What is intrinsic stand- off ratio of an UJT?
If a voltage VBB is applied between the bases with emitter open the circuit will behave as
a potential divider. Thus the voltage VBB will be divided across RB1 and RB2
The resistance ratio = RB1 / RBB is known as intrinsic stand -off ratio.
2.Give the V-I characteristics of UJT.
Disadvantages of LCD
Speed of operation is slow
LCD occupy a large area
LCD life span is quite small, when used on d.c. Therefore, they are used with a.c.
suppliers.
PART B
1.Explain the construction , operation, V-I characteristics and application of SCR and explain its
two transistor model. (16)
2. Explain the construction , operation, equivalent circuit V-I characteristics and application of
UJT (16)
3. Explain the construction , operation, equivalent circuit V-I characteristics and application of
TRIAC (16)
4.Explain the construction , operation, equivalent circuit V-I characteristics and application of
DIAC (16)
5.Explain:(a) DMOS (8)
(b) VMOS (8)
6.Explain the operation of Photo transistor (8)
7.With neat diagram explain the operation of Solar cell. (8).
8. Explain: (a) Power BJT (8)
(b) Power MOSFET (8)