BSM150GT120DN2

BSM 150 GT 120 DN2
IGBT Power Module
Solderable Power module

3-phase full-bridge
Including fast free-wheel diodes
Package with insulated metal base plate
Type
VCE
BSM 150 GT 120 DN2
1200V 200A
IC
Package
Ordering Code
TRIPACK
C67070-A2518-A67
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 k
Values
Unit
1200
1200
Gate-emitter voltage
VGE
DC collector current
IC
20
A
TC = 25 C
200
TC = 80 C
150
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 C
400
TC = 80 C
300
Power dissipation per IGBT
Ptot
TC = 25 C
1250
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
0.12
Diode thermal resistance, chip case
RthJCD
0.28
Insulation test voltage, t = 1min.
Vis
2500
Vac
Creepage distance
16
mm
Clearance
11
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
+ 150
-40 ... + 125

K/W
sec
40 / 125 / 56
Nov-24-1997
BSM 150 GT 120 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 6 mA
4.5
5.5
6.5
VGE = 15 V, IC = 150 A, Tj = 25 C
2.5
VGE = 15 V, IC = 150 A, Tj = 125 C
3.1
3.7
Collector-emitter saturation voltage
Zero gate voltage collector current
VCE(sat)
mA
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 C
2.8
VCE = 1200 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
nA
IGES
VGE = 20 V, VCE = 0 V
320
AC Characteristics
Transconductance
VCE = 20 V, IC = 150 A
Input capacitance
62
nF
10
1.5
0.8
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz

Reverse transfer capacitance
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz

Output capacitance
gfs
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Nov-24-1997
BSM 150 GT 120 DN2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 C

Turn-on delay time
ns
td(on)
VCC = 600 V, VGE = 15 V, IC = 150 A

RGon = 5.6
Rise time
200
400
100
200
600
900
70
100
tr
VCC = 600 V, VGE = 15 V, IC = 150 A

RGon = 5.6
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 150 A

RGoff = 5.6
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 150 A

RGoff = 5.6
Free-Wheel Diode
Diode forward voltage
VF
IF = 150 A, VGE = 0 V, Tj = 25 C
2.3
2.8
IF = 150 A, VGE = 0 V, Tj = 125 C
1.8
Reverse recovery time
trr
IF = 150 A, VR = -600 V, VGE = 0 V

diF/dt = -1500 A/s, Tj = 125 C
Reverse recovery charge
0.4
Qrr
IF = 150 A, VR = -600 V, VGE = 0 V

diF/dt = -1500 A/s
Tj = 25 C
Tj = 125 C
22
Nov-24-1997
BSM 150 GT 120 DN2
Power dissipation
Ptot = (TC)
parameter: Tj 150 C
Safe operating area

IC = (VCE)
parameter: D = 0, TC = 25C , Tj 150 C
10 3
1300
W
t = 18.0s
p
1100
Ptot
IC
1000
900
10 2
100 s
800
700
600
500
1 ms
10 1
400
300
10 ms
200
100
0
0
20
40
60
80
100
120
10 0
0
10
160
10
10
DC 3
10
TC
Collector current
IC = (TC)
parameter: VGE 15 V , Tj 150 C
Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T
IGBT
10 0
220
A
IC
VCE
K/W
180
ZthJC
160
10 -1
140
120
10 -2
D = 0.50
100
0.20
80
0.10
60
0.05
10 -3
0.02
40
20
0
0
0.01
single pulse
20
40
60
80
100
120
160
TC
10 -4
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
tp
Nov-24-1997
BSM 150 GT 120 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
parameter: tp = 80 s, Tj = 125 C
300
300
260
IC
240
220
200
260
17V
15V
13V
11V
9V
7V
IC
240
220
200
180
180
160
160
140
140
120
120
100
100
80
80
60
60
40
40
20
0
20
0
VCE
17V
15V
13V
11V
9V
7V
5
VCE
Typ. transfer characteristics

IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
300
A
260
IC
240
220
200
180
160
140
120
100
80
60
40
20
0
0
10
V
14
VGE
Nov-24-1997
BSM 150 GT 120 DN2
Typ. gate charge

VGE = (QGate)
parameter: IC puls = 150 A
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2
20
V
nF
VGE
16
14
600 V
800 V
10 1
Ciss
12
10
8
Coss
10 0
6
Crss
4
2
0
0
200
400
600
800
10 -1
0
1100
10
15
20
25
30
V
VCE
QGate
40
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150C

parameter: VGE = 15 V
ICsc = f(VCE) , Tj = 150C

parameter: VGE = 15 V, tSC 10 s, L < 50 nH
2.5
12
ICpuls/IC
ICsc/IC
8
1.5
6
1.0
4
0.5
0.0
0
200
400
600
800
1000 1200
V
1600
VCE
0
0
200
400
600
800
1000 1200
V 1600
VCE
Nov-24-1997
BSM 150 GT 120 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 5.6
par.: VCE = 600 V, VGE = 15 V, IC = 150 A
10 4
10 4
ns
ns
t
10 3
tdoff
10 3
tdoff
tdon
tr
tdon
tr
10 2
10 2
tf
tf
10 1
0
50
100
150
200
250
300
A
IC
10 1
0
400
10
20
30
40
60
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 5.6
par.: VCE = 600V, VGE = 15 V, IC = 150 A
120
120
mWs
mWs
Eon
80
80
60
60
40
Eon
40
Eoff
Eoff
20
0
0
20
50
100
150
200
250
300
A
IC
400
0
0
10
20
30
40
60
RG
Nov-24-1997
BSM 150 GT 120 DN2
Transient thermal impedance

Zth JC = (tp)
parameter: D = tp / T
Forward characteristics of fast recovery

reverse diode IF = f(VF)
parameter: Tj
10 0
300
A
K/W
260
IF
Diode
240
ZthJC
220
10 -1
200
180
Tj=125C
160
Tj=25C
10 -2
140
D = 0.50
120
0.20
0.10
100
60
0.02
single pulse
40
20
0
0.0
0.05
10 -3
80
0.5
1.0
1.5
2.0
3.0
10 -4
-5
10
10
-4
0.01
10
-3
10
-2
10
-1
s 10
tp
VF
Nov-24-1997
BSM 150 GT 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 300 g
Nov-24-1997
Nutzungsbedingungen
Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fr technisch geschultes Fachpersonal bestimmt. Die
Beurteilung der Geeignetheit dieses Produktes fr die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollstndigkeit der
bereitgestellten Produktdaten fr diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen.
In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, fr die wir eine liefervertragliche Gewhrleistung
bernehmen. Eine solche Gewhrleistung richtet sich ausschlielich nach Magabe der im jeweiligen Liefervertrag enthaltenen
Bestimmungen. Garantien jeglicher Art werden fr das Produkt und dessen Eigenschaften keinesfalls bernommen.
Sollten Sie von uns Produktinformationen bentigen, die ber den Inhalt dieses Produktdatenblatts hinausgehen und
insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem fr Sie
zustndigen Vertriebsbro in Verbindung (siehe www.eupec.com, Vertrieb&Kontakt). Fr Interessenten halten wir Application
Notes bereit.
Aufgrund der technischen Anforderungen knnte unser Produkt gesundheitsgefhrdende Substanzen enthalten. Bei Rckfragen
zu den in diesem Produkt jeweils enthaltenen Substanzen setzen Sie sich bitte ebenfalls mit dem fr Sie zustndigen Vertriebsbro
in Verbindung.
Sollten Sie beabsichtigen, das Produkt in gesundheits- oder lebensgefhrdenden oder lebenserhaltenden Anwendungsbereichen
einzusetzen, bitten wir um Mitteilung. Wir weisen darauf hin, dass wir fr diese Flle
- die gemeinsame Durchfhrung eines Risiko- und Qualittsassessments;
- den Abschluss von speziellen Qualittssicherungsvereinbarungen;
- die gemeinsame Einfhrung von Manahmen zu einer laufenden Produktbeobachtung dringend empfehlen und gegebenenfalls die
Belieferung von der Umsetzung solcher Manahmen abhngig machen.
Soweit erforderlich, bitten wir Sie, entsprechende Hinweise an Ihre Kunden zu geben.
Inhaltliche nderungen dieses Produktdatenblatts bleiben vorbehalten.
Terms & Conditions of usage

The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical
departments will have to evaluate the suitability of the product for the intended application and the completeness of the product
data with respect to such application.
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is
granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the
product and its characteristics.
Should you require product information in excess of the data given in this product data sheet or which concerns the specific
application of our product, please contact the sales office, which is responsible for you (see www.eupec.com, sales&contact). For
those that are specifically interested we may provide application notes.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please
contact the sales office, which is responsible for you.
Should you intend to use the Product in health or live endangering or life support applications, please notify. Please note, that for
any such applications we urgently recommend
- to perform joint Risk and Quality Assessments;
- the conclusion of Quality Agreements;
- to establish joint measures of an ongoing product survey,
and that we may make delivery depended on the realization
of any such measures.
If and to the extent necessary, please forward equivalent notices to your customers.
Changes of this product data sheet are reserved.

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BSM 150 GT 120 DN2

IGBT Power Module

Solderable Power module

BSM 150 GT 120 DN2

Pulsed collector current, tp = 1 ms

Power dissipation per IGBT

Thermal resistance, chip case

Diode thermal resistance, chip case

Insulation test voltage, t = 1min.

DIN humidity category, DIN 40 040

IEC climatic category, DIN IEC 68-1

-40 ... + 125

BSM 150 GT 120 DN2

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

VGE = 15 V, IC = 150 A, Tj = 125 C

Collector-emitter saturation voltage

Zero gate voltage collector current

VCE = 1200 V, VGE = 0 V, Tj = 25 C

VCE = 1200 V, VGE = 0 V, Tj = 125 C

Gate-emitter leakage current

VCE = 25 V, VGE = 0 V, f = 1 MHz

VCE = 25 V, VGE = 0 V, f = 1 MHz

VCE = 25 V, VGE = 0 V, f = 1 MHz

BSM 150 GT 120 DN2

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Switching Characteristics, Inductive Load at Tj = 125 C

VCC = 600 V, VGE = 15 V, IC = 150 A

VCC = 600 V, VGE = 15 V, IC = 150 A

VCC = 600 V, VGE = -15 V, IC = 150 A

VCC = 600 V, VGE = -15 V, IC = 150 A

IF = 150 A, VGE = 0 V, Tj = 125 C

Reverse recovery time

IF = 150 A, VR = -600 V, VGE = 0 V

IF = 150 A, VR = -600 V, VGE = 0 V

BSM 150 GT 120 DN2

Safe operating area

Transient thermal impedance

BSM 150 GT 120 DN2

Typ. output characteristics

Typ. output characteristics

Typ. transfer characteristics

BSM 150 GT 120 DN2

Typ. gate charge

Reverse biased safe operating area

Short circuit safe operating area

ICpuls = f(VCE) , Tj = 150C

ICsc = f(VCE) , Tj = 150C

BSM 150 GT 120 DN2

Typ. switching time

Typ. switching time

I = f (IC) , inductive load , Tj = 125C

t = f (RG) , inductive load , Tj = 125C

par.: VCE = 600 V, VGE = 15 V, RG = 5.6

par.: VCE = 600 V, VGE = 15 V, IC = 150 A

Typ. switching losses

Typ. switching losses

E = f (IC) , inductive load , Tj = 125C

E = f (RG) , inductive load , Tj = 125C

par.: VCE = 600 V, VGE = 15 V, RG = 5.6