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    Power Semiconductor Devices PDF

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    Niladri Garai
    The document discusses power semiconductor devices and their requirements. It introduces the silicon controlled rectifier (SCR) and describes its three operating states of reverse blocking, forward blocking, and forward conducting. The document also introduces the insulated gate bipolar transistor (IGBT), which combines aspects of SCRs, bipolar junction transistors, and MOSFETs. Manufacturing power devices presents challenges such as preventing secondary breakdown at high currents and producing high purity semiconductor materials.

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    Power Semiconductor Devices PDF

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    Niladri Garai
    190 views24 pages
    The document discusses power semiconductor devices and their requirements. It introduces the silicon controlled rectifier (SCR) and describes its three operating states of reverse blocking, forward blocking, and forward conducting. The document also introduces the insulated gate bipolar transistor (IGBT), which combines aspects of SCRs, bipolar junction transistors, and MOSFETs. Manufacturing power devices presents challenges such as preventing secondary breakdown at high currents and producing high purity semiconductor materials.

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    The document discusses power semiconductor devices and their requirements. It introduces the silicon controlled rectifier (SCR) and describes its three operating states of reverse blocking, forward blocking, and forward conducting. The document also introduces the insulated gate bipolar transistor (IGBT), which combines aspects of SCRs, bipolar junction transistors, and MOSFETs. Manufacturing power devices presents challenges such as preventing secondary breakdown at high currents and producing high purity semiconductor materials.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    190 views24 pages

    Power Semiconductor Devices PDF

    Uploaded by

    Niladri Garai
    The document discusses power semiconductor devices and their requirements. It introduces the silicon controlled rectifier (SCR) and describes its three operating states of reverse blocking, forward blocking, and forward conducting. The document also introduces the insulated gate bipolar transistor (IGBT), which combines aspects of SCRs, bipolar junction transistors, and MOSFETs. Manufacturing power devices presents challenges such as preventing secondary breakdown at high currents and producing high purity semiconductor materials.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    At a glance
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    The key takeaways are the requirements for power devices including high voltage and current capabilities, effective switching characteristics, and the main types of power devices discussed which are BJTs, MOSFETs, SCRs, and IGBTs.

    The main types of power semiconductor devices discussed are BJTs, MOSFETs, SCRs (silicon controlled rectifiers), and IGBTs (insulated gate bipolar transistors).

    A SCR is a silicon controlled rectifier made up of four alternating PN junctions in a PNPN structure. It has three operating states - reverse blocking, forward blocking, and forward conducting. Once triggered into the conducting state, it will remain conducting until the voltage is removed.

    Power Semiconductor Devices

    Robin Giese
    Princeton University EE341
    12/14/2000

    Requirements for power devices


    Primarily on/off control of high-I/V vs.
    amplification
    several 1000V, peak currents 3000A
    reverse breakdown voltage important for reliable OFF state

    effective switching
    low ON state drop voltage (I=V/R)
    high current density
    low driving current

    basic devices: (Power-) BJT, MOSFET


    BJT: requires high gate current for both ON and OFF
    MOSFET: somewhat more difficult to make

    Topics covered

    Requirements
    Silicon Controlled Rectifier
    lighting control
    Insulated Gate Bipolar Transistor
    High power device challenges
    Manufacturing challenges

    p-n-p-n diode

    3 states:
    reverse blocking
    forward blocking
    forward conducting
    device pops from forward blocking to forward conducting
    state
    device recovers from conducting state to forward or
    reverse blocking states after V is released

    p-n-p-n diode: fwd blocking

    Separate diodes: forward, reverse, forward bias


    p-n diode: holes from p n, e from n p,
    supplied from ohmic contacts
    p-n-p-n J1: hole from ohmic contact on p1 wants
    to cross to n1, needs e to exchange with n1 to
    maintain space charge neutrality
    n1 has no ohmic contact, J2 in reverse bias, no e
    can be supplied no current

    p-n-p-n diode in reverse blocking

    Separate diodes: reverse, forward, reverse bias


    J2 could conduct: holes from p2 to n1, etc.
    However, no supply of holes from n2 through
    reverse-biased J3 again, no current

    p-n-p-n diode leakage

    Go back to forward bias: J1/J3 forward biased, J2


    reverse-biased
    Recall: p1 is waiting for e to come from n1 through
    J1, but n1 has no e supply
    However: thermal EHP generation at J2 gives e to
    n1, hole to p2 small leakage current
    Sample applies to p-n-p-n in reverse bias

    p-n-p-n forward conduction state


    holes
    E
    Vrv

    J2 in reverse bias
    -> depletion region extends towards J1/J3 (base
    width narrowing)
    -> reverse E field, starting/ending near J1/J3
    suppose thermal EHPGen brings e to n1, so p1 can
    inject hole
    hole in n1 grabbed by strong E field of J2, swept
    into p2

    p-n-p-n fwd conducting contd


    holes
    E
    Vrv

    Now have hole in p2 -> can offer hole to n2 (J3


    conducts this hole)
    n2 inserts electron into p2, electron swept up by Efield across J2 into n1
    now n1 has a non-thermally-generated e, and with
    that can conduct another hole from p1 to p2
    -> escalating cycle, immediately reach forward
    conducting stage

    p-n-p-n states review

    3 states:
    reverse blocking, forward blocking, forward conducting
    thermal EHP generation responsible for leak currents
    high forward bias responsible for wide & strong E-field
    across J2
    E-field picks up miscellaneous holes/electrons to start
    forward conducting build-up and sustenance

    another factor: avalanche breakdown

    Triggerable SCR

    Regular p-n-p-n diode needs high reverse bias to


    make E-field across J2 sufficient to sweep up
    thermally generated e/holes
    If we inject holes ourselves at p2 using a gate,
    large E-field is not required
    -> we can use the gate to yank the device into
    forward conducting state

    Alternative transistor model


    Imagine two crossconnected pnp and npn
    transistors
    SCR gate = base of npn
    apply Vgate
    -> npn conducts
    -> attached to pnp base
    -> pnp conducts
    -> entire device
    conducts

    SCR characteristics
    Conducting state self-sustaining
    can drop gate current after conducting state is initiated
    must wait for Vbias to cede to return to blocking states

    Controllable one-way current (rectification)


    -> silicon controlled rectifier
    also, thyristor

    higher I/V capabilities than BJT

    Zero-cross SCR wave modulation

    Rise time 2s (too fast)


    Dimmers: use chokes

    buzzing of filaments
    RFI/EMI
    mechanical noise (choke resonating)
    harmonic line noise (conduits)

    Soft wave shaping

    Cant do this with SCR IGBT

    Insulated Gate Bipolar Transistor

    SCR/BJT/MOSFET hybrid
    positive Vgate n+/n- connected
    p+-i-n junction
    IGBTs: 3.5 Vdrop vs. 0.7 Vdrop for SCRs

    Single injection

    Usually:
    single injection of e recombination centers filled
    flow limited by space charge barrier

    Double injection

    Double injection:
    high enough E-field transports h to cathode
    lowered space charge barrier for e regenerative process

    Similar: avalanche multiplication

    Micro- and meso-plasmas


    Double injection
    open circuit stable
    CCNR
    small area goes up to
    high B current
    stable microplasmas
    elevated temperatures
    thermal EHP generation
    meso plasma, second breakdown
    destructive
    any inhomogeneity causing localized dT can cause
    mesoplasma

    Preventing second breakthrough

    Overlay (striped/ballasted) transistor


    striping reduces lateral electrical and thermal instabilities

    Other complications
    Junction gradients
    greater device depth non-abrupt junctions

    Junction/depletion layer curvature


    one solution: beveled junctions

    Heat issues

    Base material problems


    Czochralski (CZ) process for Si growth
    max. 100-200 -cm (Vb max. 750V)
    carbon, oxygen common impurities softspots,
    premature breakdown

    Float Zone (FZ) Silicon


    excellent purity, 1,000-12,000 -cm

    Summary

    Needs of high power devices


    introduced SCR
    illustrated ohmic load control
    introduced IGBT
    high power device problems
    high power device manufacturing

    Sources
    Ghandhi, Sorab K. Semiconductor power devices
    (New York: John Wiley & Sons, Inc. 1977)
    Streetman, Ben G. Solid state electronic devices
    (Upper Saddle River, NJ: Prentice Hall 2000)
    Baliga, B. Jayant. Power transistors: device design
    and applications (New York: IEEE 1984)
    Ramshaw, Raymond. Power electronics (London:
    Chapman and Hall Ltd 1973)
    http://www.ies.nl/Info_IGBT/body_info_igbt.html

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