17N80C3

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2002-10-15 Page 1

SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
Cool MOS Power Transistor
V
DS
800 V
R
DS(on)
0.29
I
D
17 A
Feature
New revolutionary high voltage technology
Worldwide best R
DS(on)
in TO 220
Ultra low gate charge
Periodic avalanche rated
Extreme dv/dt rated
Ultra low effective capacitances
Improved transconductance
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
P-TO220-3-31 P-TO220-3-1 P-TO263-3-2
P-TO220-3-31
1
2
3
Marking
17N80C3
17N80C3
17N80C3
Type Package Ordering Code
SPP17N80C3 P-TO220-3-1 Q67040-S4353
SPB17N80C3 P-TO263-3-2 Q67040-S4354
SPA17N80C3 P-TO220-3-31 Q67040-S4441
Maximum Ratings
Parameter Symbol Value Unit
SPA
Continuous drain current
T
C
= 25 C
T
C
= 100 C
I
D

17
11

17
1)
11
1)
A
Pulsed drain current, t
p
limited by T
jmax
I
D puls
51 51 A
Avalanche energy, single pulse
I
D
=3.4A, V
DD
=50V
E
AS
670 670 mJ
Avalanche energy, repetitive t
AR
limited by T
jmax
2)
I
D
=17A, V
DD
=50V
E
AR
0.5 0.5
Avalanche current, repetitive t
AR
limited by T
jmax
I
AR
17 17 A
Reverse diode dv/dt
I
S
= 17 A, V
DS
< V
DD
, di/dt=100A/s, T
jmax
=150C
dv/dt 6 6 V/ns
Gate source voltage V
GS
20 20 V
Gate source voltage AC (f >1Hz) V
GS
30 30
Power dissipation, T
C
= 25C P
tot
208 42 W
SPP_B
Operating and storage temperature T
j
, T
stg
-55...+150 C
2002-10-15 Page 2
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
thJC
- - 0.6 K/W
Thremal resistance, junction - case, FullPAK R
thJC_FP
- - 3.6
Thermal resistance, junction - ambient, leaded R
thJA
- - 62
Thermal resistance, junction - ambient, FullPAK R
thJA_FP
- - 80
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
R
thJA

-
-

-
35

62
-
Linear derating factor - - 1.67 W/K
Linear derating factor, FullPAK - - 0.33
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
T
sold
- - 260 C
Electrical Characteristics, at T
j
= 25 C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V, I
D
=0.25mA
V
(BR)DSS
800 - - V
Drain-source avalanche breakdown voltage
V
GS
=0V, I
D
=17A
V
(BR)DS
- 870 -
Gate threshold voltage, V
GS
= V
DS
I
D
=1mA
V
GS(th)
2.1 3 3.9
Zero gate voltage drain current
V
DS
= 800 V, V
GS
= 0 V, T
j
= 25 C
V
DS
= 800 V, V
GS
= 0 V, T
j
= 150 C
I
DSS

-
-

0.5
-

25
250
A
Gate-source leakage current
V
GS
=20V, V
DS
=0V
I
GSS
- - 100 nA
Drain-source on-state resistance
V
GS
=10V, I
D
=11A, T
j
=25C
R
DS(on)
- 0.25 0.29
Gate input resistance
f = 1 MHz, open drain
R
G
- 0.7 -
2002-10-15 Page 3
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g
fs
V
DS
2*I
D
*R
DS(on)max
,
I
D
=11A
- 15 - S
Input capacitance C
iss
V
GS
=0V, V
DS
=25V,
f=1MHz
- 2320 - pF
Output capacitance C
oss
- 1250 -
Reverse transfer capacitance C
rss
- 60 -
Effective output capacitance,
4)
energy related
C
o(er)
V
GS
=0V,
V
DS
=0V to 480V
- 59 -
Effective output capacitance,
5)
time related
C
o(tr)
- 124 -
Turn-on delay time t
d(on)
V
DD
=400V, V
GS
=0/10V,
I
D
=17A,
R
G
=4.7, T
j
=125C
- 25 - ns
Rise time t
r
- 15 -
Turn-off delay time t
d(off)
- 72 82
Fall time t
f
- 6 9
Gate Charge Characteristics
Gate to source charge Q
gs
V
DD
=640V, I
D
=17A - 12 - nC
Gate to drain charge Q
gd
- 46 -
Gate charge total Q
g
V
DD
=640V, I
D
=17A,
V
GS
=0 to 10V
- 91 177
Gate plateau voltage V
(plateau)
V
DD
=640V, I
D
=17A - 6 - V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f.
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
5
C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
2002-10-15 Page 4
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Inverse diode continuous
forward current
I
S
T
C
=25C - - 17 A
Inverse diode direct current,
pulsed
I
SM
- - 51
Inverse diode forward voltage V
SD
V
GS
=0V, I
F
=I
S
- 1 1.2 V
Reverse recovery time t
rr
V
R
=400V, I
F
=I
S
,
di
F
/dt=100A/s
- 550 - ns
Reverse recovery charge Q
rr
- 15 - C
Peak reverse recovery current I
rrm
- 51 - A
Peak rate of fall of reverse
recovery current
di
rr
/dt T
j
=25C - 1200 - A/s
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
SPA SPA
R
th1
0.008656 0.008656 K/W C
th1
0.0004386 0.0004386 Ws/K
R
th2
0.018 0.018 C
th2
0.001727 0.001727
R
th3
0.027 0.027 C
th3
0.002401 0.002401
R
th4
0.064 0.064 C
th4
0.0047 0.0047
R
th5
0.081 0.206 C
th5
0.021 0.021
R
th6
0.037 2.477 C
th6
0.149 0.412
SPP_B SPP_B
External Heatsink
T
j T
case
T
amb
C
th1
C
th2
R
th1
R
th,n
C
th,n
P
tot
(t)
2002-10-15 Page 5
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
1 Power dissipation
P
tot
= f (T
C
)
0 20 40 60 80 100 120 C 160
T
C
0
20
40
60
80
100
120
140
160
180
200
W
240
SPP17N80C3
P
t
o
t
2 Power dissiaption FullPAK
P
tot
= f (T
C
)
0 20 40 60 80 100 120
C
160
T
C
0
5
10
15
20
25
30
35
W
45

P
t
o
t
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
C
=25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A

I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
4 Safe operating area FullPAK
I
D
= f (V
DS
)
parameter: D = 0, T
C
= 25C
10
0
10
1
10
2
10
3
V
V
DS
-2
10
-1
10
0
10
1
10
2
10
A

I
D
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
2002-10-15 Page 6
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
5 Transient thermal impedance
Z
thJC
= f (t
p
)
parameter: D = t
p
/T
10
-7
10
-6
10
-5
10
-4
10
-3
10
-1
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
h
J
C
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
6 Transient thermal impedance FullPAK
Z
thJC
= f (t
p
)
parameter: D = t
p
/t
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
s
t
p
-4
10
-3
10
-2
10
-1
10
0
10
1
10
K/W
Z
t
h
J
C
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
7 Typ. output characteristic
I
D
= f (V
DS
); T
j
=25C
parameter: t
p
= 10 s, V
GS
0 5 10 15 20
V
DS
30
V
0
5
10
15
20
25
30
35
40
45
50
55
60
A
70

I
D
5V
6V
7V
8V
20V
10V
8 Typ. output characteristic
I
D
= f (V
DS
); T
j
=150C
parameter: t
p
= 10 s, V
GS
0 5 10 15 20
V
DS
30
V
0
5
10
15
20
25
A
35

I
D
4V
4.5V
5V
5.5V
6V
6.5V
20V
10V
8V
7V
2002-10-15 Page 7
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
9 Typ. drain-source on resistance
R
DS(on)
=f(I
D
)
parameter: T
j
=150C, V
GS
0 5 10 15 20 25
A
35
I
D
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3

1.5

R
D
S
(
o
n
)
4V
4.5V
5V
5.5V
6V
6.5V
7V
8V
10V
20V
10 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= 11 A, V
GS
= 10 V
-60 -20 20 60 100 C 180
T
j
0
0.2
0.4
0.6
0.8
1
1.2

1.6
SPP17N80C3
R
D
S
(
o
n
)
typ
98%
11 Typ. transfer characteristics
I
D
= f ( V
GS
); V
DS
2 x I
D
x R
DS(on)max
parameter: t
p
= 10 s
0 2 4 6 8 10 12 14 16
V
20
V
GS
0
5
10
15
20
25
30
35
40
45
50
55
A
65

I
D
25C
150C
12 Typ. gate charge
V
GS

= f (Q
Gate
)
parameter: I
D
= 17 A pulsed
0 20 40 60 80 100 120
nC
160
Q
Gate
0
2
4
6
8
10
12
V
16
SPP17N80C3
V
G
S
0,8 V
DS max
DS max
V 0,2
2002-10-15 Page 8
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
13 Forward characteristics of body diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 10 s
0 0.4 0.8 1.2 1.6 2 2.4 V 3
V
SD
-1
10
0
10
1
10
2
10
A
SPP17N80C3
I
F
T
j
= 25 C typ
T
j
= 25 C (98%)
T
j
= 150 C typ
T
j
= 150 C (98%)
14 Avalanche SOA
I
AR
= f (t
AR
)
par.: T
j
150 C
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
AR
0
2
4
6
8
10
12
14
A
18

I
A
R
Tj (START)=125C
Tj (START)=25C
15 Avalanche energy
E
AS
= f (T
j
)
par.: I
D
= 3.4 A, V
DD
= 50 V
25 50 75 100
C
150
T
j
0
50
100
150
200
250
300
350
400
450
500
550
600
mJ
700

E
A
S
16 Drain-source breakdown voltage
V
(BR)DSS
= f (T
j
)
-60 -20 20 60 100 C 180
T
j
720
740
760
780
800
820
840
860
880
900
920
940
V
980
SPP17N80C3
V
(
B
R
)
D
S
S
2002-10-15 Page 9
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
17 Avalanche power losses
P
AR
= f (f )
parameter: E
AR
=0.5mJ
10
4
10
5
10
6
Hz
f
0
50
100
150
200
250
300
350
400
W
500

P
A
R
18 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0V, f=1 MHz
0 100 200 300 400 500 600
V
800
V
DS
0
10
1
10
2
10
3
10
4
10
5
10
pF

C
C
iss
C
oss
C
rss
19 Typ. C
oss
stored energy
E
oss
=f(V
DS
)
0 100 200 300 400 500 600
V
800
V
DS
0
2
4
6
8
10
12
14
J
18

E
o
s
s
2002-10-15 Page 10
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
Definition of diodes switching characteristics
2002-10-15 Page 11
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
P-TO-220-3-1
A
B A 0.25 M
2
.
8
1
5
.
3
8

0
.
6
2.54
0.750.1
0.13 1.27
4.44
B
9
.
9
8

0
.
4
8
0.05
All metal surfaces tin plated, except area of cut.
C

0
.
2
100.4
3.7
C
0.50.1

0
.
9
5
.
2
3
1
3
.
5

0
.
5
3x
Metal surface min. x=7.25, y=12.3
2x
0.2
0.22 1.17
0.2 2.51
P-TO-263-3-1 (D
2
-PAK)
MAX.
B A 0.25 M 0.1
Typical
0.2 10
8.5
1)
7
.
5
5
1
)
(
1
5
)

0
.
2
9
.
2
5

0
.
3
1
0...0.15
5.08
2.54
0.75 0.1
1.05
0.1 1.27
4.4
B
0.5 0.1

0
.
3
2
.
7
4
.
7

0
.
5
0.05
1)
0.1
All metal surfaces: tin plated, except area of cut.
2.4
Metal surface min. x=7.25, y=6.9
A
0...0.3
B
8
2002-10-15 Page 12
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
P-TO-220-3-31 (FullPAK)
10.5 0.005

0
.
0
0
5
1
2
.
7
9
1
4
.
1

0
.
0
0
5

0
.
0
0
5
1
5
.
9
9
2.54
1
3
.
6

0
.
0
0
5
2.7
4.7
9
.
6
8
3
.
3
0.005
0.005

0
.
0
0
5

0
.
0
0
5
6.10.002
1.5 0.001
1.28
-0.002
+0.003
-0.002
+0.003
0.7
+0.005
-0.002
0.5
2.57 0.002

1 2 3
7
Please refer to mounting instructions (application note AN-TO220-3-31-01)
2002-10-15 Page 13
SPP17N80C3, SPB17N80C3
SPA17N80C3 Final data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 1999
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

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