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    Faculty Seminar Dr. Suga

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    hadimaryam
    The document discusses surface activated bonding (SAB), a room temperature bonding technique for packaging and bonding metals, semiconductors, glasses, and polymers. It provides the history of SAB, from experiments in the 1970s to its current applications in volume production. Modifications to SAB allowed bonding of ionic materials. The technique shows potential for sealing devices.

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    Faculty Seminar Dr. Suga

    Uploaded by

    hadimaryam
    34 views2 pages
    The document discusses surface activated bonding (SAB), a room temperature bonding technique for packaging and bonding metals, semiconductors, glasses, and polymers. It provides the history of SAB, from experiments in the 1970s to its current applications in volume production. Modifications to SAB allowed bonding of ionic materials. The technique shows potential for sealing devices.

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    The document discusses surface activated bonding (SAB), a room temperature bonding technique for packaging and bonding metals, semiconductors, glasses, and polymers. It provides the history of SAB, from experiments in the 1970s to its current applications in volume production. Modifications to SAB allowed bonding of ionic materials. The technique shows potential for sealing devices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    34 views2 pages

    Faculty Seminar Dr. Suga

    Uploaded by

    hadimaryam
    The document discusses surface activated bonding (SAB), a room temperature bonding technique for packaging and bonding metals, semiconductors, glasses, and polymers. It provides the history of SAB, from experiments in the 1970s to its current applications in volume production. Modifications to SAB allowed bonding of ionic materials. The technique shows potential for sealing devices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

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    SPEAKER: Bi. iei nat Tauatomo Suga, Piofessoi, The 0niveisity of Tokyo,
    Piesiuent, The }apan Institute of Electionics Packaging (}IEP)

    TITLE: Suiface activateu bonuing (SAB) foi packaging anu bonuing of metals, semiconuuctois,
    glasses anu polymeis at ioom tempeiatuie- its histoiy, cuiient status anu futuie outlook -

    BATE: Nonuay, }une 2
    nu
    , 2u14

    TINE: 1u:Su AN

    PLACE: ETB-SSS

    ABSTRACT

    The mechanism of bonuing of soliu mateiials has been consiueieu baseu on the uiffusion anu
    ieactions at elevateu tempeiatuies. Bowevei, chemical inteiactions between atoms on the mateu
    suifaces exist always as the natuie of the soliu suiface. These inteiactions aie oiigin of the
    cohesive eneigy of solius as well as the auhesion eneigy between solius. It means that any soliu
    mateiials shoulu be bonueu even if theie is no high tempeiatuie ieaction. This is the iuea of the
    ioom tempeiatuie bonuing.
    The suiface activateu bonuing (SAB) has been uevelopeu successfully to bonu metals, Si, anu III-v
    semiconuuctois, attiacteu incieasing inteiest uue to its simple piocess flow anu the ioom
    tempeiatuie piocess without heat anu auuitional mateiials foi bonuing. It has been applieu foi
    volume piouuction of SAW uevices, metal laminates, anu NENS packaging.
    The oiigin of SAB uates back to expeiiments on auhesion in the 0Bv conuucteu by NASA in the
    197us. The authoi's gioup in the 0niveisity of Tokyo maue consiueiable piogiess in 0Bv
    bonuing in the 198us, anu the technique was extenueu to apply to heteiogeneous bonuing
    ENGINEERING
    between metals, anu metals to ceiamics, anu semiconuuctois. Foi SB-IC, SAB was uemonstiateu
    to enable Cu-Cu uiiect bonuing at ioom tempeiatuie on a chip-scale bump-less inteiconnect of
    1,uuu,uuu electioues consisting of S m electioues with 6 m pitch. The possibility of applying
    SAB in ambient aii has been also uemonstiateu on Au, AnSn, anu SnAg, which aie iathei
    insensitive to oxiuation.
    A uisauvantage of SAB was its uifficulty of bonuing ionic mateiials to each othei, which incluue
    glass, sapphiie anu silicon uioxiue. The ieason foi this is still not cleai but it is assumeu that the
    suiface of ionic mateiials is spontaneously polaiizeu at uiffeient levels by ion beam
    bombaiument, which is peifoimeu piioi to the bonuing. To oveicome the pioblem of the oiiginal
    SAB methou, a mouification was pioposeu. In this appioach, the suifaces to be bonueu aie
    sputtei cleaneu by Ai anu simultaneously uepositeu with Fe anu subsequently Si. The metallic
    thin layei may shielu the suiface polaiity of the ionic mateiials anu theiefoie the wafeis aie
    bonueu veiy stiongly. By this mouifieu methou, ioom tempeiatuie bonuing of Si0
    2
    , glass, anu
    vaiious single ciystalline wafeis as well as polymei films was achieveu at ioom tempeiatuie with
    veiy high bonu stiength.
    The application of the mouifieu SAB is extenueu to sealing of glass anu polymei uevices such as
    0iganic Electio-Luminescent Bisplay (0ELB) oi lightening uevices, since theie is no othei
    suitable methou foi goou sealing agent against peimeation of watei anu oxygen fiom the
    atmospheie into those uevices.

    BI0uRAPBY

    Tauatomo S0uA joineu the Nax-Planck Institut fi
    Netallfoischung in 1979, anu ieceiveu the Ph.B. uegiee in
    mateiials science fiom 0niveisity of Stuttgait in 198S.
    Since 1984 he has been a faculty membei of the
    0niveisity of Tokyo, anu since 199S, he has been a
    piofessoi at the Bepaitment of Piecision Engineeiing of
    the School of Engineeiing. Be was also the uiiectoi of
    Reseaich uioup of Inteiconnect Ecouesign at National
    Institute of Nateiials Science (NINS), anu a Nembei of
    }apan Council of Science, as well as the chaii of IEEE
    CPNT Society }apan Chaptei. Bis ieseaiches focus on
    micio-systems integiation anu packaging, anu
    uevelopment of inteiconnect technology, especially the
    ioom tempeiatuie bonuing technique foi SB integiation.
    Be has enueavoieu to establish collaboiation between inuustiies anu acauemia foi the packaging
    technology, uiiecting R&B pioject of the Institute of Nicio-System Integiation (INSI), anu
    auvocating also impoitance of the enviionmental aspects of packaging technology as the key
    oiganizei of }apanese ioaumap of leau-fiee solueiing anu Inteinational Eco-uesign Confeience as
    well as the geneial chaii of IEEE Woikshop on Low Tempeiatuie Bonuing foi SB integiation.
    Cuiiently he is also appointeu as the piesiuent of }apan Institute foi Electionics Packaging (}IEP).
    C0NTACT: E-mail: sugape.t.u-tokyo.ac.jp
    http:www.su.t.u-tokyo.ac.jp

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