General Description: 4Q Triac
General Description: 4Q Triac
General Description: 4Q Triac
4Q Triac
30 September 2013 Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
3. Applications
General purpose motor control General purpose switching
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TO -2
20A
NXP Semiconductors
BT136-600E
4Q Triac
Symbol
Parameter
Min -
Typ 11 2.2
Max 25 15
Unit mA mA
IH
holding current
VD = 12 V; Tj = 25 C; Fig. 9
5. Pinning information
Table 2. Pin 1 2 3 mb Pinning information Symbol Description T1 T2 G T2 main terminal 1 main terminal 2 gate mounting base; main terminal 2 Simplified outline
mb
Graphic symbol
T2
sym051
T1 G
1 2 3
TO-220AB (SOT78)
6. Ordering information
Table 3. Ordering information Package Name BT136-600E BT136-600E/L01 TO-220AB TO-220AB Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 SOT78 Type number
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4Q Triac
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM IT(RMS) ITSM Parameter repetitive peak off-state voltage RMS on-state current non-repetitive peak on-state current full sine wave; Tmb 107 C; Fig. 1; Fig. 2; Fig. 3 full sine wave; Tj(init) = 25 C; tp = 20 ms; Fig. 4; Fig. 5; Fig. 3 full sine wave; Tj(init) = 25 C; tp = 16.7 ms; Fig. 5; Fig. 4 I t dIT/dt
2
Conditions
Min -
Unit V A A A
2
tp = 10 ms; SIN IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2+ G+ IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2+ GIT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2- GIT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/s; T2- G+
peak gate current peak gate power average gate power storage temperature junction temperature over any 20 ms period
-40 -
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4Q Triac
5 IT(RMS) (A) 4
003aae828
12 IT(RMS) (A) 10 8
003aae830
3 6 2 4 1 2 0 10- 2
0 - 50
50
100
Tmb (C)
150
10- 1
Fig. 1.
RMS on-state current as a function of mounting base temperature; maximum values Fig. 2.
8
f = 50 Hz Tmb 107 C RMS on-state current as a function of surge duration; maximum values
003aae827
conduction form angle factor Ptot (degrees) a (W) 30 4 6 60 2.8 90 2.2 120 1.9 180 1.57
= 180 120 90 60 30
IT(RMS) (A)
= conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
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4Q Triac
30 ITSM (A) 25
003aae831
20 15
10 5
IT
10
102
103
number of cycles
104
f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values
103
003aae829
IT
ITSM (A)
102
(1) (2)
10 10- 5
10- 4
10- 3
10- 2
tp (s)
10- 1
tp 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
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4Q Triac
8. Thermal characteristics
Table 5. Symbol Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient
10 Zth(j-mb) (K/W) 1 unidirectional bidirectional
Min -
Typ 60
Max 3.7 3 -
Rth(j-a)
003aae836
10- 1
tp
10- 2 10- 5
10- 4
10- 3
10- 2
10- 1
tp (s)
10
Fig. 6.
Transient thermal impedance from junction to mounting base as a function of pulse width
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4Q Triac
9. Characteristics
Table 6. Symbol IGT Characteristics Parameter gate trigger current Conditions VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 C; Fig. 7 IL latching current VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 C; Fig. 8 VD = 12 V; IG = 0.1 A; T2- G+; Tj = 25 C; Fig. 8 IH VT VGT holding current on-state voltage gate trigger voltage VD = 12 V; Tj = 25 C; Fig. 9 IT = 5 A; Tj = 25 C; Fig. 10 VD = 12 V; IT = 0.1 A; Tj = 25 C; Fig. 11 VD = 400 V; IT = 0.1 A; Tj = 125 C; Fig. 11 ID dVD/dt off-state current VD = 600 V; Tj = 125 C VDM = 402 V; Tj = 125 C; (VDM = 67% of VDRM); exponential waveform; gate open circuit tgt gate-controlled turn-on ITM = 6 A; VD = 600 V; IG = 0.1 A; dIG/ time dt = 5 A/s 2 s 0.1 0.5 mA 0.25 0.4 V 2.2 1.4 0.7 15 1.7 1 mA V V 4 20 mA 2.5 15 mA 10 20 mA 3 15 mA 11 25 mA 5 10 mA 4 10 mA Min Typ 2.5 Max 10 Unit mA
Static characteristics
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4Q Triac
003aae833
3 IL IL(25C)
003aae835
0 - 60
- 10
40
90
Tj (C)
140
0 - 60
- 10
40
90
Tj (C)
140
(1) T2- G+ (2) T2- G(3) T2+ G(4) T2+ G+ Fig. 7. Normalized gate trigger current as a function of junction temperature
2.0 IH IH(25C) 1.5
003aae837
Fig. 8.
12 IT (A) 8
003aae834
1.0 4 0.5
(1) (2) (3)
0 - 60
- 10
40
90
Tj (C)
140
VT (V)
Fig. 9.
Vo = 1.27 V Rs = 0.091 (1) Tj = 125 C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values Fig. 10. On-state current as a function of on-state voltage
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4Q Triac
003aae832
0.8
0.4
0 - 60
- 10
40
90
Tj (C)
140
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4Q Triac
E p q D1
A A1
mounting base
L2(1) Q
b(3) e e
0 DIMENSIONS (mm are the original dimensions) UNIT mm A 4.7 4.1 A1 1.40 1.25 b 0.9 0.6 b1(2) 1.6 1.0 b2(2) 1.3 1.0 c 0.7 0.4 D 16.0 15.2 D1 6.6 5.9 E 10.3 9.7
5 scale
10 mm
e 2.54
L 15.0 12.8
p 3.8 3.5
q 3.0 2.7
Q 2.6 2.2
Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13
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NXP N.V. 2013. All rights reserved
Development This document contains data from the objective specification for product development. Qualification This document contains data from the preliminary specification. This document contains the product specification.
Production
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11.2 Definitions
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BT136-600E
4Q Triac
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4Q Triac
12. Contents
1 2 3 4 5 6 7 8 9 10 11 11.1 11.2 11.3 11.4 General description ............................................... 1 Features and benefits ............................................1 Applications ........................................................... 1 Quick reference data ............................................. 1 Pinning information ............................................... 2 Ordering information ............................................. 2 Limiting values .......................................................3 Thermal characteristics .........................................6 Characteristics ....................................................... 7 Package outline ................................................... 10 Legal information .................................................11 Data sheet status ............................................... 11 Definitions ...........................................................11 Disclaimers .........................................................11 Trademarks ........................................................ 12
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