MDU3603

MDU3603 Single P-Channel Trench MOSFET
MDU3603
Single P-Channel Trench MOSFET, -30V, -67A, 9.1m
General Description
The MDU3603 uses advanced MagnaChips MOSFET Technology to provide low on-state resistance. This device is suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
VDS = -30V ID = -67A @VGS = -10V RDS(ON) < 7.5m @VGS = -20V < 9.1m @VGS = -10V < 13.6m @VGS = -5V
Applications
Load Switch General purpose applications Smart Module for Note PC Battery
D
PDFN56
Absolute Maximum Ratings (Ta =25oC unless otherwise noted)

Characteristics Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Silicon limited) Pulsed Drain Current Power Dissipation Single Pulse Avalanche Energy Junction and Storage Temperature Range (Note 1) (Note 2) Symbol VDSS VGSS ID IDM PD EAS TJ, Tstg Rating -30 25 -67 -120 2.5 112.5 -55~150 Unit V V A A W mJ
o
Thermal Characteristics
Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1) Symbol RJA RJC Rating 50 2
Unit
o
C/W
May. 2011. Version 1.1
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number MDU3603RH Temp. Range -55~150 C
o
Package PowerDFN56
Packing Tape & Reel
Quantity 3000 units
RoHS Status Halogen Free
Electrical Characteristics (Ta = 25oC unless otherwise noted)

Characteristics Static Characteristics Drain-Source Breakdown Voltage Gate Threshold Voltage Drain Cut-Off Current Gate Leakage Current BVDSS VGS(th) IDSS IGSS ID = -250A, VGS = 0V VDS = VGS, ID = -250A VDS = -30V, VGS = 0V VGS = 25V, VDS = 0V VGS = -20V, ID = -12A Drain-Source ON Resistance RDS(ON) VGS = -10V, ID = -12A VGS = -5V, ID = -10A Forward Transconductance Dynamic Characteristics Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge
Note : 1. 2. Surface mounted FR-4 board by JEDEC (jesd51-7) Starting TJ=25C, L=1mH, IAS= -15A VDD=-20V, VGS=-10V.
Symbol
Test Condition
Min
Typ
Max
Unit
-30 -1.0 -
-1.8
-3.0 -1
6.4 7.5 10.8 34
0.1 7.5 9.1 13.6 -
gFS
VDS = -5V, ID = -10A
Qg Qgs Qgd Ciss Crss Coss td(on) tr td(off) tf VGS = -10V ,VDS = -15V, RL = 1.25, RGEN = 3 VDS = -15V, VGS = 0V, f = 1.0MHz VDS = -15V, ID = -12A VGS = -10V
38.4 5.9 8.2 1788 268 445 15.3 13.0 61.6 53.2
ns pF nC
VSD trr Qrr
IS = -1A, VGS = 0V IF = -12A, di/dt = 100A/s
-0.71 42.3 40.7
-1.0
V ns
nC
50 45 40 35 30
-10.0V -4.0V -5.0V -6.0V -8.0V
20
15
RDS(ON) [m ]
VGS=-3.5V
VGS= -5V
-ID [A]
25 20 15 10 5
VGS=-2.5V VGS=-3.0V
10
VGS= -10V
0 0.0
0.5
1.0
1.5
2.0
2.5
0 0 10 20 30 40
-VDS [V]
-ID [A]
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
1.8
30
*Note; ID=-12A
RDS(ON), (Normalized) Drain-Source On-Resistance [m ]
*Note ; ID=-12A
1.6
25
1.4
RDS(ON) [m ]
20
VGS=-10V
1.2
15
1.0
0.8
10
0.6 -50
-25
25
50
75
100
125
150
10
TJ, Junction Temperature []
-VGS [V]
Fig.3 On-Resistance Variation with Temperature
Fig.4 On-Resistance Variation with Gate to Source Voltage
30
* Note ; VDS=-5V
Notes :
VGS = 0V
20
-IS, Reverse Drain Current [A]

0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
25
10
-ID [A]
15
10
10
0 0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-VGS [V]
-VSD, Source-Drain voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
10
* Note :VDS = -15V ID = -12A
3.0n
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
2.5n
Capacitance [pF]
2.0n
Ciss
-VGS [V]
1.5n
1.0n
Coss
Notes ; 1. VGS = 0 V 2. f = 1 MHz
500.0p
Crss
0 0 10 20 30 40 50
0.0 0 5 10 15 20 25 30
-Qg [nC]
-VDS [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
10
100 90
10
10 ms 100 ms 1s 10s DC
80 70 60
10
-ID [A]
-ID [A]
2
Operation in This Area is Limited by R DS(on)
50 40 30
10
10
-1
20
Single Pulse R jc =2/W Ta=25
10 0 25
10
-2
10
-1
10
10
10
50
75
100
125
150
-VDS [V]
Ta []
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Ambient Temperature
Z JC , Normalized Thermal Response [t]
10
10
D=0.5 0.2
10
-1
0.1 0.05 0.02 0.01
* Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC (t) + TC R JC =2/W
10
-2
single pulse
10
-4
10
-3
10
-2
10
-1
10
10
10
10
t1, Rectangular Pulse Duration [s]
Fig.11 Transient Thermal Response Curve
Package Dimension
PowerDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified
Dimension A b C D1 D2 E E1 E2 e H K L
MILLIMETERS Min 0.90 0.33 0.20 4.50 5.90 5.50 1.27BSC 0.41 0.20 0.51 0 0.71 0.71 12 Max 1.10 0.51 0.34 5.10 4.22 6.30 6.10 4.30
DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.

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MDU3603 Single P-Channel Trench MOSFET

Absolute Maximum Ratings (Ta =25oC unless otherwise noted)

May. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

MDU3603 Single P-Channel Trench MOSFET

Packing Tape & Reel

Quantity 3000 units

RoHS Status Halogen Free

Electrical Characteristics (Ta = 25oC unless otherwise noted)

6.4 7.5 10.8 34

0.1 7.5 9.1 13.6 -

VDS = -5V, ID = -10A

VSD trr Qrr

IS = -1A, VGS = 0V IF = -12A, di/dt = 100A/s

-0.71 42.3 40.7

May. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

MDU3603 Single P-Channel Trench MOSFET

Fig.1 On-Region Characteristics

Fig.2 On-Resistance Variation with Drain Current and Gate Voltage

RDS(ON), (Normalized) Drain-Source On-Resistance [m ]

TJ, Junction Temperature []

Fig.3 On-Resistance Variation with Temperature

Fig.4 On-Resistance Variation with Gate to Source Voltage

-IS, Reverse Drain Current [A]

-VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics

May. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

MDU3603 Single P-Channel Trench MOSFET

Notes ; 1. VGS = 0 V 2. f = 1 MHz

Fig.7 Gate Charge Characteristics

Fig.8 Capacitance Characteristics

Operation in This Area is Limited by R DS(on)

Fig.9 Maximum Safe Operating Area

Fig.10 Maximum Drain Current vs. Ambient Temperature

Z JC , Normalized Thermal Response [t]

0.1 0.05 0.02 0.01

* Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Z JC* R JC (t) + TC R JC =2/W

t1, Rectangular Pulse Duration [s]

Fig.11 Transient Thermal Response Curve

May. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

MDU3603 Single P-Channel Trench MOSFET

May. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

MDU3603 Single P-Channel Trench MOSFET

May. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

MDU3603 Single P-Channel Trench MOSFET

May. 2011. Version 1.1

MagnaChip Semiconductor Ltd.

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