Scribd Logo
Upload

Welcome to Scribd!

  • 126 views

    01 P-N Junction Diode

    Uploaded by

    Romesh
    This document describes testing the characteristics of a PN junction diode. It explains that a PN junction forms when a P-type and N-type semiconductor are joined, creating a potential barrier. When forward biased, the barrier is reduced and current can flow; when reverse biased, the barrier increases and little current flows. The experiment connects a diode in forward and reverse bias circuits and measures the voltage-current relationship to obtain the forward and reverse characteristics graphs. Key features like knee voltage and breakdown voltage are determined.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd

    01 P-N Junction Diode

    Uploaded by

    Romesh
    126 views5 pages
    This document describes testing the characteristics of a PN junction diode. It explains that a PN junction forms when a P-type and N-type semiconductor are joined, creating a potential barrier. When forward biased, the barrier is reduced and current can flow; when reverse biased, the barrier increases and little current flows. The experiment connects a diode in forward and reverse bias circuits and measures the voltage-current relationship to obtain the forward and reverse characteristics graphs. Key features like knee voltage and breakdown voltage are determined.

    Original Description:

    LAB MANUAL

    Original Title

    01 P-N junction diode.docx

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    DOCX, PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document describes testing the characteristics of a PN junction diode. It explains that a PN junction forms when a P-type and N-type semiconductor are joined, creating a potential barrier. When forward biased, the barrier is reduced and current can flow; when reverse biased, the barrier increases and little current flows. The experiment connects a diode in forward and reverse bias circuits and measures the voltage-current relationship to obtain the forward and reverse characteristics graphs. Key features like knee voltage and breakdown voltage are determined.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    126 views5 pages

    01 P-N Junction Diode

    Uploaded by

    Romesh
    This document describes testing the characteristics of a PN junction diode. It explains that a PN junction forms when a P-type and N-type semiconductor are joined, creating a potential barrier. When forward biased, the barrier is reduced and current can flow; when reverse biased, the barrier increases and little current flows. The experiment connects a diode in forward and reverse bias circuits and measures the voltage-current relationship to obtain the forward and reverse characteristics graphs. Key features like knee voltage and breakdown voltage are determined.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 5

    PRACTICAL -

    AIM:- TESTING OF P-N JUNCTION DIODE AND ITS CHARACTERISTICS.

    APPARATUS:(1) Regulated power supply, 0-10V, 20mA (2) Voltmeter MC type 0-25V No-1 (3) Ammeter MC type 0-10 mA No-1 MC type 1-50 A No-1 (4) P-N junction diode (IN 4001)

    THEROY:Diode is a very important device in the electronic circuit. Now a day most of semiconductor diode use of rectifier circuit. When a p- type semi conductor is suitably joined to n- type semiconductor, the contact surface is called p-n junction. This device is known is p-n junction diode. P-N junction diode has two terminals. (1) Anode (1) (2) Cathode

    If arrowhead of diode symbol is positive w.r.t bar of the symbol the diode is forward Biased or when anode is positive w.r.t. to cathode diode is forward biased.

    (2)

    If the arrowhead of the diode symbol is negative w.r.t. bar of the symbol the diode is reverse biased or when anode is negative w.r.t cathode diode is reverse biased.

    PROPERTIES OF P- N JUNCTION :
    In this fig (a) left side material is a p- type semiconductor having negative accepter ions and positively charged holes. The right donor ions and free electrons. Now suppose the two pieces are suitably treated to form p-n junction. Keep in mind that n-type material has a high concentration of free electrons while p-type material has a high concentration of holes. Therefore at the junction, there is a tendency for the free electrons to diffuse over to the p-side and holes to the n-side. This process is called diffusion. As the free electrons move across the junction from n-type to p-type. Positive donor ions are uncovered i.e. They are robbed of free electrons. Hence a positive charge is built on the n- side of the junction. At the same time, the free electrons cross the junction by filling in the holes. There fore, a net negative4 charge is established on p-type of the junction so that potential barrier occur across the junction.

    FORWARD BIASING: When external voltage applied to the junction is in such a direction that is cancels the potential barrier, thus permitting current flow, it is called forward biasing. Following points are noting;
    (1) The potential barrier is reduced and at some forward voltage (0.1 to 0.3 volt), it is eliminated altogether. (2) The junction offers low resistance to current flow. (3) Current flows in the circuit due to the establishment of low resistance path. The magnitude of current depends upon the applied forward voltage.

    REVERSE BIASING: When the external voltage applied to the junction is in such a direction that potential barrier is increased, it is called reverse biasing. Following points are noting.
    (1) The potential barrier is increased. (2) The junction offers very high resistance to current flow. (3) No current flow in the circuit due to the establishment of high resistance path.

    CHARACTERCTICS OF THE P-N JUNCTION DIODE :V-I characterctics of junction diode is the graphical relation between the voltage across the diode and the current through the diode; the characteristic is divided into two parts.
    (1) For ward characteristic (2) Reverse characteristic

    IMPORTANT TERMS: Break down voltage: - It is the reverse voltage at which p-n junction breaks down with sudden rise in reverse current. Knee voltage: - It is the forward voltage at which the current through the junction starts to increase rapidly.

    PROCEDURE : Forward biased characteristics ;(1) Connected the ckt. 1 and identify different use in the ckt . Annode of diode become positive w.r.t. Cathode. (2) Connect the milli ammeter and voltmeter of suitable range 0-50 ma and 0-25 volt voltmeter. (3) Switch on power supply and increase the voltage slowly and note down milli ammeter and the voltage increase slowly. (4) Draw the graph between voltage and current. (5) It is a suitable operating point calculate static and dynamic.

    Reverse biased characteristics:(1) Connected the ckt 2 and identify different use in the ckt. cathode of diode become positive w.r.t. anode. (2) Connect the milli ammeter and voltmeter of suitable range 0-50 milli amp and 0-25 volt voltmeter. (3) Switch on power supply and increase the voltage slowly and note down milli ammeter and the voltage increase slowly. (4) Draw the graph between voltage and current. (5) It is a suitable operating point calculate static and dynamic.

    OBSERVATION TABLE :Forward characteristics:Sr No. Supply voltage in volt Diode Voltage in volt Diode Current in mA

    Reverse characteristics:Sr No. Supply voltage in volt Diode Voltage in volt Diode Current in mA

    You might also like