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    Kertas Penerangan Teori Etching

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    Chin Seng Fatt
    The document discusses etching processes used in semiconductor fabrication. There are two main types of etching - wet etching and dry etching. Wet etching uses chemical solutions to remove materials, while dry etching uses gases and plasma. Wet etching provides high selectivity but results in isotropic profiles and has issues with chemicals. Dry etching allows for anisotropic profiles and finer geometries but the equipment is more complex. Both etching methods have advantages and disadvantages for semiconductor manufacturing.

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    Kertas Penerangan Teori Etching

    Uploaded by

    Chin Seng Fatt
    192 views6 pages
    The document discusses etching processes used in semiconductor fabrication. There are two main types of etching - wet etching and dry etching. Wet etching uses chemical solutions to remove materials, while dry etching uses gases and plasma. Wet etching provides high selectivity but results in isotropic profiles and has issues with chemicals. Dry etching allows for anisotropic profiles and finer geometries but the equipment is more complex. Both etching methods have advantages and disadvantages for semiconductor manufacturing.

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    The document discusses etching processes used in semiconductor fabrication. There are two main types of etching - wet etching and dry etching. Wet etching uses chemical solutions to remove materials, while dry etching uses gases and plasma. Wet etching provides high selectivity but results in isotropic profiles and has issues with chemicals. Dry etching allows for anisotropic profiles and finer geometries but the equipment is more complex. Both etching methods have advantages and disadvantages for semiconductor manufacturing.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    192 views6 pages

    Kertas Penerangan Teori Etching

    Uploaded by

    Chin Seng Fatt
    The document discusses etching processes used in semiconductor fabrication. There are two main types of etching - wet etching and dry etching. Wet etching uses chemical solutions to remove materials, while dry etching uses gases and plasma. Wet etching provides high selectivity but results in isotropic profiles and has issues with chemicals. Dry etching allows for anisotropic profiles and finer geometries but the equipment is more complex. Both etching methods have advantages and disadvantages for semiconductor manufacturing.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 6

    JABATAN TENAGA MANUSIA KEMENTERIAN SUMBER MANUSIA ARAS 6 BLOK D4, KOMPLEKS D PUSAT PENTADBIRAN KERAJAAN PERSEKUTUAN 62530

    PUTRAJAYA

    KERTAS PENERANGAN
    KOD NAMA DAN PROGRAM / PROGRAM CODE AND NAME TAHAP/ LEVEL No. DAN TAJUK MODUL/ MODULE No. AND TITLE EE-020-2 ASSISTANT SEMICONDUCTOR TECHNICIAN L2 DES4243 SEMICONDUCTOR FABRICATION 1 01.01 CARRY OUT SEMICONDUCTOR PACKAGING EQUIPMENT CONDITION CHECK 01.02 CARRY OUT SEMICONDUCTOR PACKAGING EQUIPMENT SAFETY CHECK 01.03 TROUBLESHOOT SEMICONDUCTOR PACKAGING EQUIPMENT FAILURE 01.04 CARRY OUT SEMICONDUCTOR PACKAGING EQUIPMENT PARTS/COMPONENTS FAILURE REPAIR/REPLACEMENT
    CARRY OUT SEMICONDUCTOR PACKAGING EQUIPMENT AND COMPONENTS MAINTENANCE USING STANDARD OPERATING PROCEDURE, EQUIPMENT MANUFACTURER SPECIFICATION, EQUIPMENT DATA BOOK, LOGBOOK, CHECKLIST, HAND TOOLS, REPORT FORMS, PERSONAL PROTECTIVE EQUIPMENT (PPE), RECORDING PROCEDURE SO THATSEMICONDUCTOR PACKAGING EQUIPMENT RECORDED AND REPORTED, FAULTY COMPONENTS REPAIRED, FUNCTIONALITY TESTED AND MAINTENANCE ACTIVITY REPORTED IN ACCORDANCE WITH MANUFACTURER MANUAL. EE-020-2/DES4243/LE01/P

    No. DAN PERNYATAAN TUGASAN TASK (S) No. AND STATEMENTS

    OBJEKTIF MODUL / MODULE OBJECTIVE

    No. KOD / CODE No.

    Muka : 1 Drp : 6

    NO KOD / CODE NO
    TAJUK : ETCH

    EE-020-2/DES4243/LE01/P

    Muka:2Drp:6

    TUJUAN : Kertas penerangan ini menerangkan tentang proses dan jenis-jenis etching dalam fabrikasi semikonduktor.

    PENERANGAN : 1.0 OVERVIEW OF ETCH

    Etch is process of selectively removing unneeded material from the wafer surface, using either chemical or physical means. Layers of materials can be selectively etched or blanket etched. Selectively etch transfers IC design image on the photoresist to the surface layer on wafer. Blanket etch removes the entire layer on the wafer surface. There are two types of etch in the semiconductor fabrication, that is the traditional wet etch and the modern dry etch. Besides IC fabrication, etch process is applied in mask making, printed circuit board, artwork, nameplate and glassware.

    2.0

    WET ETCH

    Wet etch is a etch process that uses chemical solution to dissolve materials on the wafer surface. The byproducts of wet etch are gases, liquids or materials that are soluble in the etchant solution. The wet etch process consists of three basic steps etch, rinse and dry.

    Rajah 1: Wet Etch Basic Steps

    NO KOD / CODE NO

    EE-020-2/DES4243/LE01/P

    Muka:3Drp:6

    Wet etch is a pure chemical process. The product of wet etch is an isotropic profile.

    Rajah 2: Wet etch profile

    Wet etch was widely used in IC industry when feature size was larger than 3 micron. As IC industry advances, wet etch is still used in wafer cleaning, blanket film strip and test wafer film strip and cleaning.

    Applications of Wet Etch Wet etching silicon dioxide Hydrofluoric Acid (HF) Solution Normally diluted in buffer solution or DI water to reduce etch rate. SiO2 + 6HF H2SiF6 + 2H2O Widely used for CVD film quality control BOE: Buffered oxide etch WERR: wet etch rate ratio Wet etching silicon Silicon etch normally use mixture of nitric acid (HNO3) and hydrofluoric acid (HF) HNO3 oxidizes the silicon and HF removes the oxide at the same time. DI water or acetic acid can be used to dilute the etchant, and reduces the etch rate. Si + 2HNO3 + 6HF H2SiF6 + 2HNO2 + 2H2O Wet etching Silicon Nitride Wet etching aluminum Heated (42 to 45C) solution One example: 80% phosphoric acid, 5% acetic acid, 5% nitric acid, and 10 % water Nitric acid oxidizes aluminum and phosphoric acid removes aluminum oxide at the same time. Acetic acid slows down the oxidation of the nitric acid. Hot (150 to 200 C) phosphoric acid H3PO4 Solution High selectivity to silicon oxide Used for LOCOS and STI nitride strip Si3N4 + 4 H3PO4 Si3(PO4)4 + 4NH3

    NO KOD / CODE NO
    Advantages High selectivity

    EE-020-2/DES4243/LE01/P

    Muka:4Drp:6
    Disadvantages

    Isotropic profile Cant pattern sub micron feature High chemical usage High chemical hazards o o o Direct exposure to liquids Direct and indirect exposure to fumes Potential for explosion

    Relatively inexpensive equipment Batch system, high throughput

    3.0

    DRY ETCH

    Dry etch is an etching process that does not utilize any liquid chemicals or etchants to remove materials from wafer, generating only volatile by products in the process. Dry etching may be accomplished by any of the following: 1) through chemical reactions that consume the material, using chemically reactive gases or plasma; 2) physical removal of the material, usually by momentum transfer; or 3) a combination of both physical removal and chemical reactions. 3.1 3.2 DRY ETCHING MECHANISM

    Generate etchant species Diffusion to surface Adsorption and migration Reaction By-product desorption Diffusion by products to bulk gas WHY DRY ETCHING

    Advanced IC fabrication with small geometries requires precise pattern transfer Geometry in the 3 micron range is common Line widths comparable to film thickness Some applications require high aspect ratio Some materials wet etch with difficulty Disposal of wastes is less costly

    NO KOD / CODE NO
    Material to be Etched Polysilicon

    EE-020-2/DES4243/LE01/P Examples of Gases Used in the RIE

    Muka:5Drp:6

    CF4; SF6; Cl2; CCl3F; etc. (w/ or w/o oxygen)

    Al; Al doped with Si, Cu, Ti Tungsten Refractory Silicides TiN; TiC

    CCl4; CCl4+Cl2; BCl3; BCl3+Cl2 Fluorinated Gases Fluorinated plus Chlorinated Gases (w/ or w/o oxygen) Same as Al Etch

    Advantages No photoresist adhesion problems Anisotropic profile Chemical consumption is small Disposal of reaction products less costly Suitable for automation, single wafer

    Disadvantages Complex equipment, RF, gas metering Selectivity can be poor Residues left on wafer, polymers, heavy metals CFCs

    4.0

    COMPARISON OF WET AND DRY ETCH

    NO KOD / CODE NO
    SOALAN:

    EE-020-2/DES4243/LE01/P

    Muka:6Drp:6

    1. Terangkan maksud etch process.

    2. .Terangkan kebaikan dan keburukan wet etch.

    RUJUKAN:

    1. Introduction to Semiconductor Manufacturing Technology, Hong Xiao, 2001, McGraw Hill, ISBN: 97800342348036.

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