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    Devices and Circuits Ii: Lecture Goals

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    Mạnh Cường Trần
    The document discusses concepts related to using transistors as linear amplifiers including small-signal modeling and analysis. It introduces bipolar junction transistor (BJT) and field-effect transistor (FET) amplifiers, describing how they are biased in different regions for amplification. It also discusses using coupling and bypass capacitors to modify equivalent circuits for DC and AC analysis, and derives the small-signal models for diodes and transistors. Common-source and common-emitter amplifier configurations are identified along with characteristics like voltage gain.

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    Devices and Circuits Ii: Lecture Goals

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    Mạnh Cường Trần
    37 views6 pages
    The document discusses concepts related to using transistors as linear amplifiers including small-signal modeling and analysis. It introduces bipolar junction transistor (BJT) and field-effect transistor (FET) amplifiers, describing how they are biased in different regions for amplification. It also discusses using coupling and bypass capacitors to modify equivalent circuits for DC and AC analysis, and derives the small-signal models for diodes and transistors. Common-source and common-emitter amplifier configurations are identified along with characteristics like voltage gain.

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    Lecture6(20-3-11)

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    The document discusses concepts related to using transistors as linear amplifiers including small-signal modeling and analysis. It introduces bipolar junction transistor (BJT) and field-effect transistor (FET) amplifiers, describing how they are biased in different regions for amplification. It also discusses using coupling and bypass capacitors to modify equivalent circuits for DC and AC analysis, and derives the small-signal models for diodes and transistors. Common-source and common-emitter amplifier configurations are identified along with characteristics like voltage gain.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    37 views6 pages

    Devices and Circuits Ii: Lecture Goals

    Uploaded by

    Mạnh Cường Trần
    The document discusses concepts related to using transistors as linear amplifiers including small-signal modeling and analysis. It introduces bipolar junction transistor (BJT) and field-effect transistor (FET) amplifiers, describing how they are biased in different regions for amplification. It also discusses using coupling and bypass capacitors to modify equivalent circuits for DC and AC analysis, and derives the small-signal models for diodes and transistors. Common-source and common-emitter amplifier configurations are identified along with characteristics like voltage gain.

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    Lecture Goals

    EE 332

    DEVICES AND CIRCUITS II


    Lecture 6 Small-Signal Modeling and Linear Amplification (1)

    Understanding of concepts related to: Transistors as linear amplifiers dc and ac equivalent circuits Use of coupling and bypass capacitors and inductors to modify dc and ac equivalent circuits Small-signal voltages and currents Small-signal models for diodes and transistors Identification of common-source and common-emitter amplifiers Amplifier characteristics such as voltage gain, input and output resistances and linear signal range Rule-of-thumb estimates for voltage gain of common-emitter and common-source amplifiers.

    Introduction to Amplifiers
    BJT is an excellent amplifier when biased in forward-active region FET can be used as amplifier if operated in pinch-off or saturation region. In these regions, transistors can provide high voltage, current and power gains. Bias is provided to stabilize the operating point in desired operation region. Q-point also determines Small-signal parameters of transistor Voltage gain, input resistance, output resistance Maximum input and output signal amplitudes Power consumption

    BJT Amplifier

    29

    BJT Amplifier
    BJT is biased in active region by dc voltage source VBE. Q-point is set at (IC, VCE)=(1.5 mA, 5 V) with IB = 15 A. Total base-emitter voltage is: vBE =VBE + vbe Collector-emitter voltage is: load line
    v = 10 i R CE C C

    BJT Amplifier (contd.)

    This gives the


    8 mV peak change in vBE gives 5 A change in iB and 0.5 mA change in iC. 0.5 mA change in iC gives 1.65 V change in vCE .

    BJT Amplifier (contd.)


    If changes in operating currents and voltages are small enough, then IC and VCE waveforms are undistorted replicas of input signal. Small voltage change at base causes large voltage change at collector. Voltage gain is given by:
    v 1.65180 = 206180 = 206 Av = ce = v 0.0080 be

    MOSFET Amplifier

    Minus sign indicates 1800 phase shift between input and output signals.

    30

    MOSFET Amplifier

    MOSFET Amplifier
    MOSFET is biased in active region by dc voltage source VGS. Q-point is set at (ID, VDS)=(1.56 mA, 4.8 V) with VGS =3.5 V. Total gate-source voltage is:
    v =V + vgs GS GS

    1 V p-p change in vGS gives 1.25 mA p-p change in iD and 4 V p-p change in vDS.

    Coupling and Bypass Capacitors

    Coupling and Bypass Capacitors


    C1 and C3 are large coupling capacitors or dc blocking capacitors, their reactance at signal frequency is negligible. C2 is bypass capacitor, provides low impedance path for ac current from emitter to ground, removing RE (required for good Q-point stability) from circuit when ac signals are considered. AC coupling through capacitors is used to inject ac input signal and extract output signal without disturbing Q-point Capacitors provide negligible impedance at frequencies of interest and provide open circuits at dc.

    31

    DC and AC Analysis
    DC analysis: Find dc equivalent circuit by replacing all capacitors by open circuits and inductors by short circuits. Find Q-point from dc equivalent circuit by using appropriate largesignal transistor model. AC analysis: Find ac equivalent circuit by replacing all capacitors by short circuits, inductors by open circuits, dc voltage sources by ground connections and dc current sources by open circuits. Replace transistor by small-signal model Use small-signal ac equivalent to analyze ac characteristics of amplifier. Combine end results of dc and ac analysis to yield total voltages and currents in the network.

    DC Equivalent for BJT Amplifier

    All capacitors in original amplifier circuits are replaced by open circuits, disconnecting vI, RI, and R3 from circuit.

    AC Equivalent for BJT Amplifier

    DC and AC Equivalents for MOSFET Amplifier


    dc equivalent

    = R C

    R R

    = 10 k 30 k = 4 . 3 k 100 k

    ac equivalent

    Simplified ac equivalent

    R = R

    32

    Small-Signal Operation of Diode

    Small-Signal Operation of Diode


    The slope of the diode characteristic at the Q-point is called the diode conductance and is given by:
    V i I I +I = S exp D = D S g = D V V d v V T T D Q po int T I I D = 40 I For ID>>IS g D= D d V 0.025V T

    gd is small but non-zero for ID = 0 because slope of diode equation is nonzero at origin. 1 Diode resistance is given by: r = d g d

    Small-Signal Operation of Diode (contd.)


    v i =I exp D D S V T

    Current-Controlled Attenuator
    Magnitude of ac voltage vo developed across diode can be controlled by value of dc bias current applied to diode.

    V + v +i = I exp D d D d S V T

    V = I exp D S V T

    2 3 v v 1 v 1 v 1 + I exp D d + d + d + ... S 2 V 6 V V V T T T T

    Subtracting ID from both sides of the equation, 2 3 v v v 1 d d i = ( I + I ) + + 1 d + ... D S V d 2 V 6 V T T T For id to be a linear function of signal voltage vd, v << 2V = 0.05V T d This represents the requirement for small-signal operation of the diode. v i = ( I + I ) d i = I + g v D D d d D S d V T

    33

    Current-Controlled Attenuator
    From dc equivalent circuit ID = I,

    Small Signal Model of BJT

    From ac equivalent circuit, r 1 d =v 1 =v vo = v ir +R i R i ( I + I )R I d S I 1+ I 1+ r V d T For RI =1 k, IS =10-15 A, If I = 0, vo = vi, magnitude of vi is limited to only 5 mV. If I = 100 A, input signal is attenuated by a factor of 5, vi can have a magnitude of 25 mV.

    Using 2-port y-parameter network,


    i = y v + y v ce b 11 be 12 ic = y v + y v ce 21 be 22

    The port variables can represent either time-varying part of total voltages and currents or small changes in them away from Q-point values.

    Small Signal Model of BJT


    i y = b 12 v ce v
    y 21 = ic v

    = be =0
    =

    i v

    B
    Q point

    =0
    I = C V T =
    Q point

    CE
    C

    i v

    be v ce = 0 = v be =0

    BE C

    End of Lecture 6
    I C +V CE

    Q point

    22

    ic v ce

    i v

    CE

    i i B y = b = 11 v v BE be v = 0 ce

    =
    Q point

    oV

    o is small-signal common-emitter current gain of the BJT.

    34

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