Opa 2320 Datasheet

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OPA

320

OP A2

320 OP A2 320

OP A2

320S

OPA320, OPA2320 OPA320S, OPA2320S


SBOS513D AUGUST 2010 REVISED NOVEMBER 2011

www.ti.com

Precision, 20MHz, 0.9pA, Low-Noise, RRIO, CMOS Operational Amplifier with Shutdown
Check for Samples: OPA320, OPA2320, OPA320S, OPA2320S
1

FEATURES
Precision with Zero-Crossover Distortion: Low Offset Voltage: 150 V (max) High CMRR: 114dB Rail-to-Rail I/O Low Input Bias Current: 0.9pA (max) Low Noise: 7nV/Hz at 10kHz Wide Bandwidth: 20MHz Slew Rate: 10V/ s Quiescent Current: 1.45mA/ch Single-Supply Voltage Range: 1.8V to 5.5V OPA320S, OPA2320S: IQ in Shutdown Mode: 0.1 A Unity-Gain Stable Small Packages: SOT23, MSOP, DFN

DESCRIPTION
The OPA320 (single) and OPA2320 (dual) are a new generation of precision, low-voltage CMOS operational amplifiers optimized for very low noise and wide bandwidth while operating on a low quiescent current of only 1.45mA. The OPA320 series is ideal for low-power, single-supply applications. Low-noise (7nV/Hz) and high-speed operation also make them well-suited for driving sampling analog-to-digital converters (ADCs). Other applications include signal conditioning and sensor amplification. The OPA320 features a linear input stage with zero-crossover distortion that delivers excellent common-mode rejection ratio (CMRR) of typically 114dB over the full input range. The input common-mode range extends 100mV beyond the negative and positive supply rails. The output voltage typically swings within 10mV of the rails. In addition, the OPAx320 have a wide supply voltage range from 1.8V to 5.5V with excellent PSRR (106dB) over the entire supply range, making them suitable for precision, low-power applications that run directly from batteries without regulation. The OPA320 (single version) is available in a SOT23-5 package; the OPA320S shut-down single version is available in an SOT23-6 package. The dual OPA2320 is offered in SO-8, MSOP-8, and DFN-8 packages, and the OPA2320S (dual with shut-down) in an MSOP-10 package.

23

APPLICATIONS
High-Z Sensor Signal Conditioning Transimpedance Amplifiers Test and Measurement Equipment Programmable Logic Controllers (PLCs) Motor Control Loops Communications Input/Output ADC/DAC Buffers Active Filters

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. FilterPro is a trademark of Texas Instruments Incorporated. All other trademarks are the property of their respective owners.
Copyright 20102011, Texas Instruments Incorporated

UNLESS OTHERWISE NOTED this document contains PRODUCTION DATA information current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

OPA320, OPA2320 OPA320S, OPA2320S


SBOS513D AUGUST 2010 REVISED NOVEMBER 2011 www.ti.com

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION (1)


PRODUCT OPA320 OPA320S
(2)

PACKAGE-LEAD SOT23-5 SOT23-6 MSOP-8 DFN-8 SO-8 MSOP-10

PACKAGE DESIGNATOR DBV DBV DGK DRG D DGS

PACKAGE MARKING, QUANTITY RAC RAE OCLQ OCMQ O2320A TBD

OPA2320 OPA2320S (2) (1) (2)

For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet, or visit the device product folder at www.ti.com. Product preview device.

ABSOLUTE MAXIMUM RATINGS (1)


Over operating free-air temperature range, unless otherwise noted.
OPA320, OPA320S, OPA2320, OPA2320S Supply voltage, VS = (V+) (V) Signal input pins Voltage (2) Current (2) 6 (V) 0.5 to (V+) + 0.5 10 Continuous 40 to +150 65 to +150 +150 4000 1000 200 UNIT V V mA mA C C C V V V

Output short-circuit current (3) Operating temperature, TA Storage temperature, TSTG Junction temperature, TJ Human body model (HBM) ESD ratings Charged device model (CDM) Machine model (MM) (1) (2) (3)

Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. Input terminals are diode-clamped to the power-supply rails. Input signals that can swing more than 0.5V beyond the supply rails should be current limited to 10mA or less. Short-circuit to ground, one amplifier per package.

Copyright 20102011, Texas Instruments Incorporated

OPA320, OPA2320 OPA320S, OPA2320S


www.ti.com SBOS513D AUGUST 2010 REVISED NOVEMBER 2011

ELECTRICAL CHARACTERISTICS: VS = +1.8V to +5.5V or 0.9V to 2.75V


Boldface limits apply over the specified temperature range, TA = 40C to +125C. At TA = +25C, RL = 10k connected to VS/2, VCM = VS/2, VOUT = VS/2, and SHDN x = VS+, unless otherwise noted.
OPA320, OPA320S, OPA2320, OPA2320S PARAMETER OFFSET VOLTAGE Input offset voltage vs Temperature vs Power supply Over temperature Channel separation INPUT VOLTAGE Common-mode voltage range Common-mode rejection ratio Over temperature INPUT BIAS CURRENT Input bias current IB TA = 40C to +85C Over temperature OPA2320, OPA2320S, TA = 40C to +125C OPA320, OPA320S, TA = 40C to +125C Input offset current Over temperature NOISE Input voltage noise Input voltage noise density Input current noise density INPUT CAPACITANCE Differential Common-mode OPEN-LOOP GAIN 0.1V < VO < (V+) 0.1V, RL = 10k Open-loop voltage gain AOL 0.1V < VO < (V+) 0.1V, RL = 10k 0.2V < VO < (V+) 0.2V, RL = 2k 0.2V < VO < (V+) 0.2V, RL = 2k Phase margin FREQUENCY RESPONSE Gain bandwidth product Slew rate GBP SR PM VS = 5V, CL = 50pF VS = 5.0V, CL = 50pF Unity gain G = +1 To 0.1%, 2V step, G = +1 Settling time tS To 0.01%, 2V step, G = +1 To 0.0015%, 2V step, G = +1 (1) Overload recovery time Total harmonic distortion + noise (2) THD+N VIN G > VS VO = 4VPP, G = +1, f = 10kHz, RL = 10k VO = 2VPP, G = +1, f = 10kHz, RL = 600 20 10 0.25 0.32 0.5 100 0.0005 0.0011 MHz V/s s s s ns % % 114 100 108 96 132 130 123 130 47 dB dB dB dB Degrees 5 4 pF pF en in f = 0.1Hz to 10Hz f = 1kHz f = 10kHz f = 1kHz 2.8 8.5 7 0.6 VPP nV/Hz nV/Hz fA/Hz IOS TA = 40C to +85C TA = 40C to +125C 0.2 0.2 0.9 50 400 600 0.9 50 400 pA pA pA pA pA pA pA VCM CMRR VS = 5.5V, (V) 0.1V < VCM < (V+) + 0.1V (V) 0.1 100 96 114 (V+) + 0.1 V dB dB VOS dVOS/dT PSR VS = +5.5V VS = +1.8V to +5.5V VS = +1.8V to +5.5V At 1kHz 40 1.5 5 15 130 150 5 20 V V/C V/V V/V dB TEST CONDITIONS MIN TYP MAX UNIT

(1) (2)

Based on simulation. Third-order filter; bandwidth = 80kHz at 3dB.

Copyright 20102011, Texas Instruments Incorporated

OPA320, OPA2320 OPA320S, OPA2320S


SBOS513D AUGUST 2010 REVISED NOVEMBER 2011 www.ti.com

ELECTRICAL CHARACTERISTICS: VS = +1.8V to +5.5V or 0.9V to 2.75V (continued)


Boldface limits apply over the specified temperature range, TA = 40C to +125C. At TA = +25C, RL = 10k connected to VS/2, VCM = VS/2, VOUT = VS/2, and SHDN x = VS+, unless otherwise noted.
OPA320, OPA320S, OPA2320, OPA2320S PARAMETER OUTPUT Voltage output swing from both rails Over temperature Short-circuit current Capacitive load drive Open-loop output resistance SHUTDOWN (3) All amplifiers disabled, SHDN = V Quiescent current per amplifier IQSD OPA2320S only, SHDN A = VS, SHDN B = VS+ OPA2320S only, SHDN A = VS+, SHDN B = VS High-level input voltage Low-level input voltage Amplifier enable time (4) Amplifier disable time (4) SHDN pin input bias current (per pin) POWER SUPPLY Specified voltage range Quiescent current per amplifier OPA320, OPA320S Over temperature OPA2320, OPA2320S Over temperature Power-on time TEMPERATURE Specified range Operating range 40 40 +125 +150 C C VS IQ IO = 0mA, VS = +5.5V IO = 0mA, VS = +5.5V IO = 0mA, VS = +5.5V IO = 0mA, VS = +5.5V V+ = 0V to 5V, to 90% IQ level 28 1.45 1.5 1.75 1.85 1.6 1.7 mA mA mA mA s 1.8 5.5 V VIH VIL tON tOFF Amplifier enabled Amplifier disabled G = 1, VOUT = 0.1 VS/2, full shutdown OPA2320S only, partial shutdown (5) G = 1, VOUT = 0.1 VS/2 VIH = 5V VIL = 0V
(5)

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VO

RL = 10k RL = 2k RL = 10k RL = 2k

10 25

20 35 30 45

mV mV mV mV mA

ISC CL RO

VS = 5.5V IO = 0mA, f = 1MHz

65 See Typical Characteristics 90

0.1 1.6 1.6 0.7 VS+ 20 6 3 0.13 0.04

0.5

A mA mA

5.5 0.3 VS+

V V s

s A A

(3) (4) (5)

Specified by design and characterization; not production tested. Disable time (tOFF) and enable time (tON) are defined as the time between the 50% point of the signal applied to the SHDN pin and the point at which the output voltage reaches the 10% (disable) or 90% (enable) level. Full shutdown refers to the dual OPA2320S having both A and B channels disabled (SHDN A = SHDN B = VS). For partial shutdown, only one SHDN pin is exercised; in this mode, the internal biasing and oscillator remain operational and the enable time is shorter.

Copyright 20102011, Texas Instruments Incorporated

OPA320, OPA2320 OPA320S, OPA2320S


www.ti.com SBOS513D AUGUST 2010 REVISED NOVEMBER 2011

THERMAL INFORMATION: OPA320, OPA320S


OPA320 THERMAL METRIC (1) DBV (SOT23) 5 PINS JA JC(top) JB JT JB JC(bottom) Junction-to-ambient thermal resistance Junction-to-case(top) thermal resistance Junction-to-board thermal resistance Junction-to-top characterization parameter Junction-to-board characterization parameter Junction-to-case(bottom) thermal resistance 219.3 107.5 57.5 7.4 56.9 N/A OPA320S DBV (SOT23) 6 PINS 177.5 108.9 27.4 13.3 26.9 N/A C/W UNITS

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

THERMAL INFORMATION: OPA2320, OPA2320S


OPA2320 THERMAL METRIC (1) D (SO) 8 PINS JA JC(top) JB JT JB JC(bottom) Junction-to-ambient thermal resistance Junction-to-case(top) thermal resistance Junction-to-board thermal resistance Junction-to-top characterization parameter Junction-to-board characterization parameter Junction-to-case(bottom) thermal resistance 122.6 67.1 64.0 13.2 63.4 N/A DGK (MSOP) 8 PINS 174.8 43.9 95.0 2.0 93.5 N/A DRG (DFN) 8 PINS 50.6 54.9 25.2 0.6 25.3 5.7 OPA2320S DGS (MSOP) 10 PINS 171.5 43.0 91.4 1.9 89.9 N/A C/W UNITS

(1)

For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

Copyright 20102011, Texas Instruments Incorporated

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OPA320, OPA2320 OPA320S, OPA2320S


SBOS513D AUGUST 2010 REVISED NOVEMBER 2011 www.ti.com

PIN CONFIGURATIONS
DBV PACKAGE SOT23-5 (TOP VIEW)
OUT V+IN 1 2 -IN A 3 4 -IN +IN A V3 4 2 5 V+ OUT A 1 Exposed Thermal Die Pad on Underside(2) 8 7 6 5 V+ OUT B -IN B +IN B

DRG PACKAGE DFN-8 (TOP VIEW)

DBV PACKAGE SOT23-6 (TOP VIEW)


VOUT V+IN 1 2 3 6 5 4 V+ SHDN OUT A -IN -IN A +IN A

D, DGK PACKAGES SO-8, MSOP-8 (TOP VIEW)


1 2 3 4 8 7 6 5 V+ OUT B -IN B +IN B

DGS PACKAGE MSOP-10 (TOP VIEW)


VOUT A -IN A +IN A VSHDN A 1 2 A 3 B 4 5 7 6 +IN B SHDN B 8 -IN B 10 V+ 9 VOUT B

V-

(1) (2)

No internal connection. Connect thermal pad to V.

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OPA320, OPA2320 OPA320S, OPA2320S


www.ti.com SBOS513D AUGUST 2010 REVISED NOVEMBER 2011

TYPICAL CHARACTERISTICS
At TA = +25C, VCM = VOUT = mid-supply, and RL = 10k, unless otherwise noted.
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
14 12
25

OFFSET VOLTAGE DRIFT DISTRIBUTION

Number of Amplifiers (%)

20

10 8 6 4 2 0

Number of Amplifiers

15

10

-130 -120 -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130

0.1

0.5

0.9

1.3

1.7

2.1

2.5

2.9

Offset Drift (mV/C)

Offset Voltage (mV)

Figure 1. OFFSET VOLTAGE vs COMMON-MODE VOLTAGE


100 80 60

Figure 2. OPEN-LOOP GAIN/PHASE vs FREQUENCY


160 140 120 100 VS = 2.5V CL = 50pF 0 -20 -40 Phase -60

Offset Voltage (mV)

40 20 0 -20 -40 -60 -80 -100 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 Common-Mode Voltage (V) Representative Units VS = 2.75V

Gain (dB)

Phase ()

80 60 40 20 0 -20 1 10 100 1k 10k 100k 1M 10M Frequency (Hz) Gain

-80 -100 -120 -140 -160 -180 100M

Figure 3. OPEN-LOOP GAIN vs TEMPERATURE


140 135

Figure 4. QUIESCENT CURRENT vs SUPPLY VOLTAGE


1.5 +125C

Quiescent Current (mA/Ch)

10kW Load

Open-Loop Gain (dB)

130 125 2kW Load 120 115 110 105 100 -50 -25 0 25 50 75 100 125 150 Temperature (C)

1.45 +85C 1.4 +25C 1.35 -40C 1.3

1.25 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Supply Voltage (V)

Figure 5.

Figure 6.

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TYPICAL CHARACTERISTICS (continued)


At TA = +25C, VCM = VOUT = mid-supply, and RL = 10k, unless otherwise noted.
INPUT BIAS CURRENT vs SUPPLY VOLTAGE
1 0.8

INPUT BIAS CURRENT vs COMMON-MODE VOLTAGE


6 5 4

Input Bias Current (pA)

Input Bias Current (pA)

0.6 0.4 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 Supply Voltage (V) IBIB+

3 2 1 0 -1 -2 -3 -4 -5 -6 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 Common-Mode Voltage (V) IB+ IBIOS

Figure 7. INPUT BIAS CURRENT DISTRIBUTION


40 35

Figure 8. INPUT BIAS CURRENT vs TEMPERATURE


1300 1200 1100 1000 900 800 700 600 500 400 300 200 100 0 -100 -50 IOS IB+ IB-

Number of Amplifiers (%)

30 25 20 15 10 5 0

Input Bias Current (pA)

IB

IOS

-0.35

-0.3

-0.2

-0.25

-0.15

-0.1

0.1

0.2

0.05

-0.05

0.15

0.25

-25

25

50

75

100

125

150

Temperature (C)

Input Bias Current (pA)

Figure 9. CMRR AND PSRR vs FREQUENCY


140

Figure 10. CMRR AND PSRR vs TEMPERATURE


130

Common-Mode Rejection Ratio (dB), Power-Supply Rejection Ratio (dB)

Common-Mode Rejection Ratio (dB), Power-Supply Rejection Ratio (dB)

VS = 1.8V to 5.5V

120 CMRR 100 80 60 40 PSRR 20 0 100 1k 10k 100k 1M 10M Frequency (Hz)

125 120 115 110 105 100 95 90 -50 -25 0 25 50 75 100 125 150 Temperature (C) PSRR CMRR

Figure 11.

Figure 12.

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TYPICAL CHARACTERISTICS (continued)


At TA = +25C, VCM = VOUT = mid-supply, and RL = 10k, unless otherwise noted.
INPUT VOLTAGE NOISE SPECTRAL DENSITY vs FREQUENCY
1000 VS = 1.8V to 5.5V

0.1Hz TO 10Hz INPUT VOLTAGE NOISE


6 5 4

Voltage Noise (nV/Hz)

Voltage (mV)
10 100 1k 10k 100k 1M

100

3 2 1 0 -1 -2 -3

10

-4

10

Frequency (Hz)

Time (1s/div)

Figure 13. CLOSED-LOOP GAIN vs FREQUENCY


60 VS = +1.8V RL = 10kW CL = 50pF 60

Figure 14. CLOSED-LOOP GAIN vs FREQUENCY


VS = +5.5V RL = 10kW CL = 50pF

40

G = +100V/V

40

G = +100V/V

Gain (dB)

20 G = +10V/V

Gain (dB)

20 G = +10V/V

G = +1V/V

G = +1V/V

-20 10k 100k 1M Frequency (Hz) 10M 100M

-20 10k 100k 1M Frequency (Hz) 10M 100M

Figure 15.

Figure 16. OUTPUT VOLTAGE SWING vs OUTPUT CURRENT (MSOP-8)


3
5.5VS

MAXIMUM OUTPUT VOLTAGE vs FREQUENCY


6 5

Output Voltage (VPP)

4 3 2

Output Voltage (V)

3.3VS

1 0 -1 -2 VS = 2.75 V -3 -40C +25C +125C

1.8VS 1 0 10k 100k Frequency (Hz) 1M 10M RL = 10kW CL = 50pF

10

20

30

40

50

60

70

80

Output Current (mA)

Figure 17.

Figure 18.

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TYPICAL CHARACTERISTICS (continued)


At TA = +25C, VCM = VOUT = mid-supply, and RL = 10k, unless otherwise noted.
OPEN-LOOP OUTPUT IMPEDANCE vs FREQUENCY
1000 VS = 2.75V

SMALL-SIGNAL OVERSHOOT vs LOAD CAPACITANCE


70 G = 1, VS = 1.8V 60 G = 1, VS = 5.5V G = 10, VS = 1.8V G = 10, VS = 5.5V

Impedance (W)

50

Overshoot (%)
1 10M 100M

40 30 20 10

100

10 10 100 1k 10k 100k 1M Frequency (Hz)

0 0 500 1000 1500 2000 2500 3000 Capacitive Load (pF)

Figure 19. THD+N vs AMPLITUDE


Total Harmonic Distortion and Noise (%)

Figure 20. THD+N vs FREQUENCY


Total Harmonic Distortion and Noise (%)
0.1 Frequency = 10kHz VIN = 2VPP VS = 2.5V G = +1V/V 0.01 Load = 600W

0.1

0.01 Load = 600W 0.001 Frequency = 10kHz VS = 2.5V G = +1V/V 0.0001 0.01 0.1 VIN (VPP) 1

0.001

Load = 10kW 10

Load = 10kW 0.0001 10 100 1k Frequency (Hz) 10k 100k

Figure 21. THD+N vs FREQUENCY


Total Harmonic Distortion and Noise (%)
0.1 Frequency = 10kHz VIN = 4VPP VS = 2.5V G = +1V/V 0.01 Load = 600W 0.001

Figure 22. CHANNEL SEPARATION vs FREQUENCY (for Dual)


0 VS = 2.75V -20

Channel Separation (dB)

-40 -60 -80 -100 -120 -140

Load = 10kW 0.0001 10 100 1k Frequency (Hz) 10k 100k

1k

10k

100k

1M

10M

100M

Frequency (Hz)

Figure 23.

Figure 24.

10

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TYPICAL CHARACTERISTICS (continued)


At TA = +25C, VCM = VOUT = mid-supply, and RL = 10k, unless otherwise noted.
SLEW RATE vs SUPPLY VOLTAGE
12 CL = 50pF 11.5

SMALL-SIGNAL STEP RESPONSE


0.1 0.075 0.05 Gain = +1 VS = 2.75V VIN = 100mVPP

Slew Rate (V/ms)

Rise 10.5 Fall 10 9.5 9 1.6 2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 Supply Voltage (V)

Voltage (V)

11

0.025 0 -0.025 -0.05 -0.075 -0.1 -0.8 -0.4 0 0.4 Time (ms) 0.8 1.2 VOUT VIN 1.6

Figure 25. SMALL-SIGNAL STEP RESPONSE


0.1 0.075 0.05
1.5 1 VIN 0.5 VOUT 0 -0.5

Figure 26. LARGE-SIGNAL STEP RESPONSE vs TIME


Gain = +1 VS = 2.75V VIN = 2VPP

Voltage (V)

0 -0.025 -0.05 -0.075

Voltage (V)

0.025

Gain = -1 VS = 2.75V VIN = 100mVPP

VOUT VIN -1.2 -0.8 -0.4 Time (ms) 0 0.4 0.8

-1 -1.5 -0.4

-0.1 -1.6

0.4

0.8

1.2

1.6

Time (ms)

Figure 27.

Figure 28.

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APPLICATION INFORMATION RAIL-TO-RAIL INPUT OPERATING VOLTAGE


The OPA320 series op amps are unity-gain stable and can operate on a single-supply voltage (1.8V to 5.5V), or a split supply voltage (0.9V to 2.75V), making them highly versatile and easy to use. The power-supply pins should have local bypass ceramic capacitors (typically 0.001F to 0.1F). The OPA320 amplifiers are fully specified from +1.8V to +5.5V and over the extended temperature range of 40C to +125C. Parameters that can exhibit variance with regard to operating voltage or temperature are presented in the Typical Characteristics. The OPA320 product family features true rail-to-rail input operation, with supply voltages as low as 0.9V (1.8V). The design of the OPA320 amplifiers include an internal charge-pump that powers the amplifier input stage with an internal supply rail at approximately 1.6V above the external supply (VS+). This internal supply rail allows the single differential input pair to operate and remain very linear over a very wide input common-mode range. A unique zero-crossover input topology eliminates the input offset transition region typical of many rail-to-rail, complementary input stage operational amplifiers. This topology allows the OPA320 to provide superior common-mode performance (CMRR > 110dB, typical) over the entire common-mode input range, which extends 100mV beyond both power-supply rails. When driving analog-to-digital converters (ADCs), the highly linear VCM range of the OPA320 assures maximum linearity and lowest distortion.

INPUT AND ESD PROTECTION


The OPA320 incorporates internal electrostatic discharge (ESD) protection circuits on all pins. In the case of input and output pins, this protection primarily consists of current-steering diodes connected between the input and power-supply pins. These ESD protection diodes also provide in-circuit input overdrive protection, provided that the current is limited to 10mA as stated in the Absolute Maximum Ratings. Many input signals are inherently current-limited to less than 10mA; therefore, a limiting resistor is not required. Figure 29 shows how a series input resistor (RS) may be added to the driven input to limit the input current. The added resistor contributes thermal noise at the amplifier input and the value should be kept to the minimum in noise-sensitive applications.
V+ IOVERLOAD 10mA, Max OPA320 VIN RS

PHASE REVERSAL
The OPA320 op amps are designed to be immune to phase reversal when the input pins exceed the supply voltages, therefore providing further in-system stability and predictability. Figure 30 shows the input voltage exceeding the supply voltage without any phase reversal.
4 3 2 VOUT VS = 2.5V VIN

Voltage (V)

1 0 -1 -2 -3

VOUT

Figure 29. Input Current Protection

-4 -500

-250

250 Time (ms)

500

750

1000

Figure 30. No Phase Reversal

12

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FEEDBACK CAPACITOR IMPROVES RESPONSE


For optimum settling time and stability with high-impedance feedback networks, it may be necessary to add a feedback capacitor across the feedback resistor, RF, as shown in Figure 31. This capacitor compensates for the zero created by the feedback network impedance and the OPA320 input capacitance (and any parasitic layout capacitance). The effect becomes more significant with higher impedance networks.
CF

result of signal rectification associated with the internal semiconductor junctions. While all operational amplifier pin functions can be affected by EMI, the input pins are likely to be the most susceptible. The OPA320 operational amplifier family incorporates an internal input low-pass filter that reduces the amplifiers response to EMI. Both common-mode and differential mode filtering are provided by the input filter. The filter is designed for a cut-off frequency of approximately 580MHz (3dB), with a roll-off of 20dB per decade.

OUTPUT IMPEDANCE
The open-loop output impedance of the OPA320 common-source output stage is approximately 90. When the op amp is connected with feedback, this value is reduced significantly by the loop gain. For example, with 130dB (typ) of open-loop gain, the output impedance is reduced in unity-gain to less than 0.03. For each decade rise in the closed-loop gain, the loop gain is reduced by the same amount, which results in a ten-fold increase in effective output impedance. While the OPA320 output impedance remains very flat over a wide frequency range, at higher frequencies the output impedance rises as the open-loop gain of the op amp drops. However, at these frequencies the output also becomes capacitive as a result of parasitic capacitance. This in turn prevents the output impedance from becoming too high, which can cause stability problems when driving large capacitive loads. As mentioned previously, the OPA320 has excellent capacitive load drive capability for an op amp with its bandwidth.

RIN VIN

RF

V+

CIN RIN CIN = RF CF

OPA320
CL CIN

VOUT

NOTE: Where CIN is equal to the OPA320 input capacitance (approximately 9pF) plus any parasitic layout capacitance.

Figure 31. Feedback Capacitor Improves Dynamic Performance It is suggested that a variable capacitor be used for the feedback capacitor because input capacitance may vary between op amps and layout capacitance is difficult to determine. For the circuit shown in Figure 31, the value of the variable feedback capacitor should be chosen so that the input resistance times the input capacitance of the OPA320 (typically 9pF) plus the estimated parasitic layout capacitance equals the feedback capacitor times the feedback resistor:
RIN CIN = RF CF

CAPACITIVE LOAD AND STABILITY


The OPA320 is designed to be used in applications where driving a capacitive load is required. As with all op amps, there may be specific instances where the OPA320 can become unstable. The particular op amp circuit configuration, layout, gain, and output loading are some of the factors to consider when establishing whether an amplifier is stable in operation. An op amp in the unity-gain (+1V/V) buffer configuration and driving a capacitive load exhibits a greater tendency to become unstable than an amplifier operated at a higher noise gain. The capacitive load, in conjunction with the op amp output resistance, creates a pole within the feedback loop that degrades the phase margin. The degradation of the phase margin increases as the capacitive loading increases. When operating in the unity-gain configuration, the OPA320 remains stable with a pure capacitive load up to approximately 1nF.

Where: CIN is equal to the OPA320 input capacitance (sum of differential and common-mode) plus the layout capacitance. The capacitor value can be adjusted until optimum performance is obtained.

EMI SUSCEPTIBILITY AND INPUT FILTERING


Operational amplifiers vary in susceptibility to electromagnetic interference (EMI). If conducted EMI enters the operational amplifier, the dc offset observed at the amplifier output may shift from the nominal value while EMI is present. This shift is a

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The equivalent series resistance (ESR) of some very large capacitors (CL > 1F) is sufficient to alter the phase characteristics in the feedback loop such that the amplifier remains stable. Increasing the amplifier closed-loop gain allows the amplifier to drive increasingly larger capacitance. This increased capability is evident when observing the overshoot response of the amplifier at higher voltage gains, as shown in Figure 33. One technique for increasing the capacitive load drive capability of the amplifier operating in unity gain is to insert a small resistor (RS), typically 10 to 20, in series with the output, as shown in Figure 32. This resistor significantly reduces the overshoot and ringing associated with large capacitive loads. A possible problem with this technique is that a voltage divider is created with the added series resistor and any resistor connected in parallel with the capacitive load. The voltage divider introduces a gain error at the output that reduces the output swing. The error contributed by the voltage divider may be insignificant. For instance, with a load resistance, RL = 10k and RS = 20, the gain error is only about 0.2%. However, when RL is decreased to 600, which the OPA320 is able to drive, the error increases to 7.5%.
V+ RS OPA320 VIN 10W to 20W RL CL VOUT

OVERLOAD RECOVERY TIME


Overload recovery time is the time it takes the output of the amplifier to come out of saturation and recover to the linear region. Overload recovery is particularly important in applications where small signals must be amplified in the presence of large transients. Figure 34 and Figure 35 show the positive and negative overload recovery times of the OPA320, respectively. In both cases, the time elapsed before the OPA320 comes out of saturation is less than 100ns. In addition, the symmetry between the positive and negative recovery times allows excellent signal rectification without distortion of the output signal.
3 2.5 Output 2 1.5 1 0.5 0 -0.5 -1 9.75 10 10.25 10.5 10.75 11 Input VS = 2.75V G = -10

Voltage (V)

Time (250ns/div)

Figure 34. Positive Recovery Time


1 0.5 Input 0 -0.5 -1 -1.5 -2 Output -2.5 -3 9.75 10 10.25 10.5 VS = 2.75V G = -10 10.75 11

Figure 32. Improving Capacitive Load Drive


70 G = 1, VS = 1.8V 60 50 G = 1, VS = 5.5V G = 10, VS = 1.8V G = 10, VS = 5.5V

Overshoot (%)

40 30 20 10 0 0 500 1000 1500 2000 2500 3000 Capacitive Load (pF)

Voltage (V)

Time (250ns/div)

Figure 35. Negative Recovery Time

Figure 33. Small-Signal Overshoot versus Capacitive Load (100mVPPoutput step)

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GENERAL LAYOUT GUIDELINES


The OPA320 is a wideband amplifier. To realize the full operational performance of the device, good high-frequency printed circuit board (PCB) layout practices are required. The bypass capacitors must be connected between each supply pin and ground as close to the device as possible. The bypass capacitor traces should be designed for minimum inductance.

LEADLESS DFN PACKAGE


The OPA320 series uses the DFN style package (also known as SON), which is a QFN with contacts on only two sides of the package bottom. This leadless package maximizes PCB space and offers enhanced thermal and electrical characteristics through an exposed pad. One of the primary advantages of the DFN package is its low height (0.8mm). DFN packages are physically small, have a smaller routing area, improved thermal performance, reduced electrical parasitics, and a pinout scheme that is consistent with other commonly-used packages (such as SO and MSOP). Additionally, the absence of external leads eliminates bent-lead issues. The DFN package can easily be mounted using standard PCB assembly techniques. See Application Report, QFN/SON PCB Attachment (SLUA271) and Application Report, Quad Flatpack No-Lead Logic Packages (SCBA017), both available for download at www.ti.com. The exposed leadframe die pad on the bottom of the DFN package should be connected to the most negative potential (V).

The key elements to a transimpedance design, as shown in Figure 36, are the expected diode capacitance (CD), which should include the parasitic input common-mode and differential-mode input capacitance (4pF + 5pF for the OPA320); the desired transimpedance gain (RF); and the gain-bandwidth (GBW) for the OPA320 (20MHz). With these three variables set, the feedback capacitor value (CF) can be set to control the frequency response. CF includes the stray capacitance of RF, which is 0.2pF for a typical surface-mount resistor.
CF < 1pF
(1)

RF 10MW V+ l CD OPA320 VOUT

V-

(1) CF is optional to prevent gain peaking. It includes the stray capacitance of RF.

Figure 36. Dual-Supply Transimpedance Amplifier To achieve a maximally-flat, second-order Butterworth frequency response, the feedback pole should be set to:
1 = 2pRFCF GBW 4pRFCD

APPLICATION EXAMPLES TRANSIMPEDANCE AMPLIFIER


Wide gain bandwidth, low input bias current, low input voltage, and current noise make the OPA320 an ideal wideband photodiode transimpedance amplifier. Low-voltage noise is important because photodiode capacitance causes the effective noise gain of the circuit to increase at high frequency.

(1)

Bandwidth is calculated by:


f-3dB = GBW 2pRFCD (Hz)
(2)

For even higher transimpedance bandwidth, consider the high-speed CMOS OPA380 (90MHz GBW), OPA354 (100MHz GBW), OPA300 (180MHz GBW), OPA355 (200MHz GBW), or OPA656/57 (400MHz GBW).

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For single-supply applications, the +IN input can be biased with a positive dc voltage to allow the output to reach true zero when the photodiode is not exposed to any light, and respond without the added delay that results from coming out of the negative rail; this configuration is shown in Figure 37. This bias voltage also appears across the photodiode, providing a reverse bias for faster operation.
CF < 1pF
(1)

RF 10MW

photodiode can significantly reduce its capacitance. Smaller photodiodes have lower capacitance. Use optics to concentrate light on a small photodiode. 3. Noise increases with increased bandwidth. Limit the circuit bandwidth to only that required. Use a capacitor across the RF to limit bandwidth, even if not required for stability. 4. Circuit board leakage can degrade the performance of an otherwise well-designed amplifier. Clean the circuit board carefully. A circuit board guard trace that encircles the summing junction and is driven at the same voltage can help control leakage. For additional information, refer to the Application Bulletins Noise Analysis of FET Transimpedance Amplifiers (SBOA060), and Noise Analysis for High-Speed Op Amps (SBOA066), available for download at the TI web site.

V+ l OPA320 +VBIAS VOUT

HIGH-IMPEDANCE SENSOR INTERFACE


Many sensors have high source impedances that may range up to 10M, or even higher. The output signal of sensors often must be amplified or otherwise conditioned by means of an amplifier. The input bias current of this amplifier can load the sensor output and cause a voltage drop across the source resistance, as shown in Figure 38, where (VIN+ = VS IBIAS RS). The last term, IBIAS RS, shows the voltage drop across RS. To prevent errors introduced to the system as a result of this voltage, an op amp with very low input bias current must be used with high impedance sensors. This low current keeps the error contribution by IBIAS RS less than the input voltage noise of the amplifier, so that it does not become the dominant noise factor. The OPA320 series of op amps feature very low input bias current (typically 200fA), and are therefore ideal choices for such applications.
RS 100kW IB VIN+ V+ OPA320 VRF VOUT

(1) CF is optional to prevent gain peaking. It includes the stray capacitance of RF.

Figure 37. Single-Supply Transimpedance Amplifier For additional information, refer to Application Bulletin (SBOA055), Compensate Transimpedance Amplifiers Intuitively, available for download at www.ti.com.

OPTIMIZING THE TRANSIMPEDANCE CIRCUIT


To achieve the best performance, components should be selected according to the following guidelines: 1. For lowest noise, select RF to create the total required gain. Using a lower value for RF and adding gain after the transimpedance amplifier generally produces poorer noise performance. The noise produced by RF increases with the square-root of RF, whereas the signal increases linearly. Therefore, signal-to-noise ratio improves when all the required gain is placed in the transimpedance stage. 2. Minimize photodiode capacitance and stray capacitance at the summing junction (inverting input). This capacitance causes the voltage noise of the op amp to be amplified (increasing amplification at high frequency). Using a low-noise voltage source to reverse-bias a

RG

Figure 38. Noise as a Result of IBIAS

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DRIVING ADCS
The OPA320 series op amps are well-suited for driving sampling analog-to-digital converters (ADCs) with sampling speeds up to 1MSPS. The zero-crossover distortion input stage topology allows the OPA320 to drive ADCs without degradation of differential linearity and THD.
+5V

The OPA320 can be used to buffer the ADC switched input capacitance and resulting charge injection while providing signal gain. Figure 40 shows the OPA320 configured to drive the ADS8326.

50kW (2.5V) 8

RG REF1004-2.5 4 +5V +5V 1/2 OPA2320 R3 25kW R4 100kW R1 100kW R2 25kW

1/2 OPA2320 RL 10kW

VOUT

G=5+

200kW RG

Figure 39. Two Op Amp Instrumentation Amplifier with Improved High-Frequency Common-Mode Rejection

+5V C1 100nF V+ OPA320 VVIN 0 to 4.096V Optional R2 50kW -5V C2 100nF


(2)

+5V R1 100W
(1) (1)

+IN ADS8326 16-Bit 250kSPS REF IN +5V

C3 1nF

-IN

SD1 BAS40

REF3240 4.096V

C4 100nF

(1) Suggested value; may require adjustment based on specific application. (2) Single-supply applications lose a small number of ADC codes near ground as a result of op amp output swing limitation. If a negative power supply is available, this simple circuit creates a 0.3V supply to allow output swing to true ground potential.

Figure 40. Driving the ADS8326

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ACTIVE FILTER
The OPA320 is well-suited for active filter applications that require a wide bandwidth, fast slew rate, low-noise, single-supply operational amplifier. Figure 41 shows a 500kHz, second-order, low-pass filter using the multiplefeedback (MFB) topology. The components have been selected to provide a maximally-flat Butterworth response. Beyond the cutoff frequency, roll-off is 40dB/dec. The Butterworth response is ideal for applications requiring predictable gain characteristics, such as the anti-aliasing filter used in front of an ADC. One point to observe when considering the MFB filter is that the output is inverted, relative to the input. If this inversion is not required, or not desired, a noninverting output can be achieved through one of these options: 1. adding an inverting amplifier; 2. adding an additional second-order MFB stage; or 3. using a noninverting filter topology, such as the Sallen-Key (shown in Figure 42).

MFB and Sallen-Key, low-pass and high-pass filter synthesis is quickly accomplished using TIs FilterPro program. This software is available as a free download at www.ti.com.
R3 549W C2 150pF

R1 549W VIN

R2 1.24kW

V+

OPA320 C1 1nF V-

VOUT

Figure 41. Second-Order Butterworth 500kHz Low-Pass Filter

220pF V+ 1.8kW VIN = 1VRMS 3.3nF 47pF OPA320 VOUT 19.5kW 150kW

V-

Figure 42. OPA320 Configured as a Three-Pole, 20kHz, Sallen-Key Filter

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REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (August 2011) to Revision D Page

Changed status of OPA2320 SO-8 (D) to production data from product preview. ............................................................... 2

Changes from Revision B (March 2010) to Revision C

Page

Added SHDN value to Electrical Characteristics condition line ............................................................................................ 3 Added new test condition row for Input Bias Current Over Temperature parameter ........................................................... 3 Changed test condition for Phase Margin parameter in Electrical Characteristics ............................................................... 3 Added test condition to Short-Circuit Current parameter in Electrical Characteristics ......................................................... 4 Changed Shutdown subsection of Electrical Characteristics along with associated notes .................................................. 4 Changed Power Supply subsection of Electrical Characteristics ......................................................................................... 4 Added values to Thermal Information tables, moved to new page, and updated format ..................................................... 5 Removed D (SO-8) package pinout drawing from Pin Configurations section ..................................................................... 6 Changed names of pins 2 and 6 for DGS (MSOP-10) package .......................................................................................... 6 Changed Figure 4 ................................................................................................................................................................. 7 Changed Figure 18 ............................................................................................................................................................... 9 Changed 100s to 100ns in first paragraph of Overload Recovery Time section .............................................................. 14 Changed Figure 34 ............................................................................................................................................................. 14 Changed Figure 35 ............................................................................................................................................................. 14 Changed R2 value in Figure 40 from 500 to 50k ........................................................................................................... 17

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PACKAGE OPTION ADDENDUM

www.ti.com

16-Aug-2012

PACKAGING INFORMATION
Orderable Device OPA2320AID OPA2320AIDGKR OPA2320AIDGKT OPA2320AIDR OPA2320AIDRGR OPA2320AIDRGT OPA320AIDBVR OPA320AIDBVT Status
(1)

Package Type Package Drawing SOIC VSSOP VSSOP SOIC SON SON SOT-23 SOT-23 D DGK DGK D DRG DRG DBV DBV

Pins 8 8 8 8 8 8 5 5

Package Qty 75 2500 250 2500 3000 250 3000 250

Eco Plan

(2)

Lead/ Ball Finish

MSL Peak Temp

(3)

Samples (Requires Login)

ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE ACTIVE

Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br) Green (RoHS & no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR CU NIPDAU Level-2-260C-1 YEAR CU NIPDAU Level-2-260C-1 YEAR CU NIPDAU Level-2-260C-1 YEAR CU NIPDAU Level-2-260C-1 YEAR CU NIPDAU Level-2-260C-1 YEAR CU NIPDAU Level-2-260C-1 YEAR CU NIPDAU Level-2-260C-1 YEAR

(1)

The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)

Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)

MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

Addendum-Page 1

PACKAGE OPTION ADDENDUM

www.ti.com

16-Aug-2012

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

Addendum-Page 2

PACKAGE MATERIALS INFORMATION


www.ti.com 17-Dec-2012

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins Type Drawing VSSOP VSSOP VSSOP SOIC SON SON SOT-23 SOT-23 DGK DGK DGK D DRG DRG DBV DBV 8 8 8 8 8 8 5 5

SPQ

Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 330.0 330.0 180.0 330.0 330.0 180.0 180.0 180.0 12.4 12.4 12.4 12.4 12.4 12.4 8.4 8.4 5.3 5.3 5.3 6.4 3.3 3.3 3.2 3.2

B0 (mm) 3.4 3.4 3.4 5.2 3.3 3.3 3.1 3.1

K0 (mm) 1.4 1.4 1.4 2.1 1.1 1.1 1.39 1.39

P1 (mm) 8.0 8.0 8.0 8.0 8.0 8.0 4.0 4.0

W Pin1 (mm) Quadrant 12.0 12.0 12.0 12.0 12.0 12.0 8.0 8.0 Q1 Q1 Q1 Q1 Q2 Q2 Q3 Q3

OPA2320AIDGKR OPA2320AIDGKR OPA2320AIDGKT OPA2320AIDR OPA2320AIDRGR OPA2320AIDRGT OPA320AIDBVR OPA320AIDBVT

2500 2500 250 2500 3000 250 3000 250

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION


www.ti.com 17-Dec-2012

*All dimensions are nominal

Device OPA2320AIDGKR OPA2320AIDGKR OPA2320AIDGKT OPA2320AIDR OPA2320AIDRGR OPA2320AIDRGT OPA320AIDBVR OPA320AIDBVT

Package Type VSSOP VSSOP VSSOP SOIC SON SON SOT-23 SOT-23

Package Drawing DGK DGK DGK D DRG DRG DBV DBV

Pins 8 8 8 8 8 8 5 5

SPQ 2500 2500 250 2500 3000 250 3000 250

Length (mm) 367.0 366.0 210.0 367.0 367.0 210.0 210.0 210.0

Width (mm) 367.0 364.0 185.0 367.0 367.0 185.0 185.0 185.0

Height (mm) 35.0 50.0 35.0 35.0 35.0 35.0 35.0 35.0

Pack Materials-Page 2

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