Where Are We Today in y Research in Photovoltaics ?
Where Are We Today in y Research in Photovoltaics ?
Where Are We Today in y Research in Photovoltaics ?
David Cahen
Institute of Energy Conversion, U o Delaware DoE University Center of Excellence y for Photovoltaic Research & Education
Tom Surek Bolko von Roedern
NREL NREL
A PV device:
Types of PV Devices
Primarily based on solid state electronic material systems solid-state
Elemental Semiconductors
Single or multi-crystal multi crystal Polycrystalline Amorphous thin film
Si, Ge
GaAs InP CdTe CuInSe2
Organic Compounds
E Efficienc (%) cy
15 10 5 Cu2S/CdS
nanoporous cell
1950
1960
1970
1980
1990
2000
Year
Inverter Module
Mounting, Electrical Installation, Installation Engineering
h< Eg
h> Eg
quantum efficiency
Eg> qVOC
fill factor
final cell
High cost of fabrication for terrestrial applications. Maybe for concentrators High performance multijunction cells > 35% efficiency, used in space.
To better use solar spectrum -> mult junct on device multi-junction dev ce structures
Thermodynamic Efficiency Limits non-concentrated Sunlight (AM 1.5)
# of Junctions 1 2 3 4 infinite Efficiency 30% 42% 49% 53% 68% Optimum EG (eV) 1.3 1.9 - 1.0 2.3 - 1.4 - 0.8 2.6 1.8 1.2 0.8 26-18-12-08
Crystalline Si
Highest efficiency: 24.7% in l 24 7% single crystal t l 19.8% multi-crystalline g High materials cost wafer thickness > 300 m poor material use due to sawing d
QE of high efficiency TFSCs: (a) a-Si thin top cell of a triple junction with no back reflector; (b) a-SiGe, bottom cell with graded bandgap and back reflector; (c) CdTe; (d) Cu(InGa)Se2 with Ga/(In+Ga)= 0.3 and Eg 1.2 eV;4 (e) CuInSe2
Why a-Si:H? Strong optical absorption (-> thin film); alloys cover much of solar spectrum Can be doped both p- and n-type Performance (stabilized) Highest lab./ module efficiency : 13.3% / 11% (??) Typical module efficiency: 6-7% Less temperature-sensitive than c-Si (10-20% more kWhr / kW) Manufacturing Plasma CVD -> Low temp. processing and minimal processing steps m mp p g m m p g p On many substrates, e.g., polymer, stainless steel -> OK for BIPV Stability degrades during first 100 hours of light exposure by 10-20% (rel.) (rel ) Multi-junction structures improve efficiency and stability Well-characterized, reversible, self-limiting; partial summer annealing Improve further: nano-crystalline-Si embedded in a-Si tissue (HUJI)
Why CdTe? y By alloying with Hg, Zn, S, can cover much of solar spectrum Strong optical absorption (-> thin film) Can be doped both p- and n-type p p yp Performance Highest lab. /module efficiency: 16 5% / 10 7% lab 16.5% 10.7% Typical module efficiency: 9.0% Several Manufacturing Methods (can be up scaled low-cost potential) up-scaled, low cost Vapor transport (at First Solar) Very high growth rate @ high temperature In-line processing n l ne process ng Electrochemical deposition Batch: many plates at once, very slow, but 100% utilization, Post-deposition processes activate junction (critical and complex) p p j p Environmental problems associated with Cd manageable
CdTe PV
CuInSe2 Based PV
Why CuInSe2? Wh C Very strong optical absorption (-> thin film) (Tolerant in terms of manufacturing Alloys can cover part of solar spectrum Intrinsically stable, self-healing -> good module outdoors stability selfPerformance Highest lab. efficiency:19.5% ( multi-crystalline Si) lab efficiency:19 19. (~ multiHighest module efficiency:13.4% (Showa Shell Cu(InGa)(SeS2)) efficiency:13. Manufacturing f Glass or flexible foils or plastic substrates MultiMulti-source evaporation -> continuous in-line deposition inReaction of metal film or nano-particle precursor in H2Se or H2S nano-
Manufacturer
Technology
module/cell
BEST
17.7 / 16.3 17.0 15.3 17 0 / 15 3 15.5 / 13.5 14.4 / ??? 13.3 / ??? 13.2 / 11.9 11.0 / 10.3 9.4 8.3 94/83 6.4 /??? 6.4 / 5.7
Single-crystal Si non-standard jnctn Single-crystal Single crystal Si non standard jnctn non-standard Single-crystal Si non-standard jnctn Multi crystal Si standard jnctn Single-crystal Si standard jnctn g y j EFG(ribbon) Si standard jnctn
72% 69% 63% 68% 63% 62% 56% 57% 64% 53%
WuerthSolar CIGS First Solar CdTe Mitsubishi Uni-Solar a-Si, single jnctn a-Si, triple jncnt
2005
80%
2005
80%
2010
2015
2005
2005
90%
Evolutionary x-Si technology advances: x Si advances Thinner wafers (to 150 m) Improved processing Improved performance Lower feedstock prices Needed for ~80% learning curve
80%
2005
90%
Disruptive silicon technologies: Much thinner wafers (<100 m) Much improved performance (>25%) Innovative processing and processes Needed for ~70% learning curve
80% 70%
2005
80%
2005
80%
50% per year growth
2010
2015
2005
2010
2015
2005
Significant opportunities for evolutionary and disruptive advancements: Improved performance and reliability Improved processes and processing Reduced manufacturing costs
2010
2015
2005
Significant opportunities for evolutionary and disruptive advancements: Improved performance and reliability Improved processes and processing Reduced manufacturing costs
Concentrators
2005
2005
80%
Concentrators
2005
2005
80%
2010
2015
Concentrators
2005 80% 0
2005
90% 80%
2010
2015
Concentrators
2005
2005
90% 80%
Significant potential for evolutionary g p y 80% and disruptive advancements: Low manufacturing costs with scale-up Very high cell efficiencies Improved reliability p y 2010 Innovative concentrating concepts
2015
Revolutionary Generation) Technologies: Quantum dots Nanotechnology Multi-multi-junctions Thermophotonics, Thermophotonics voltaics Intermediate band . . .
(3rd
80%
But . PV module manufacturing cost decreases asymptotically in past 12 yrs $ 1/Wp ( 10 /kWh @ 10 yr lif ) (~10 /kWhr life)
Dye cells
Make better use of sunlight bad materials good cell fabrication easy HOW? Smarter Optics Self-healing materials Self-assembly Solar paint
Roll to roll