Scribd Logo
Upload

Welcome to Scribd!

  • 80 views

    Science of Micro Fabrication: 04-04-09 04-04-09 CMOS Process Flows

    Uploaded by

    Vineeth Sarma
    The document describes the key steps in the CMOS fabrication process. It details the formation of N-wells and P-wells through implantation, shallow trench isolation to isolate devices, gate oxidation and polysilicon deposition, light doped drain implantation, sidewall spacer formation, and source and drain implantation to form the transistors. The CMOS process has evolved from feature sizes of 0.8 micrometers to 0.18 micrometers on wafers that have increased from 150 to 300 millimeters in diameter.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Science of Micro Fabrication: 04-04-09 04-04-09 CMOS Process Flows

    Uploaded by

    Vineeth Sarma
    80 views55 pages
    The document describes the key steps in the CMOS fabrication process. It details the formation of N-wells and P-wells through implantation, shallow trench isolation to isolate devices, gate oxidation and polysilicon deposition, light doped drain implantation, sidewall spacer formation, and source and drain implantation to form the transistors. The CMOS process has evolved from feature sizes of 0.8 micrometers to 0.18 micrometers on wafers that have increased from 150 to 300 millimeters in diameter.

    Original Title

    ICFab-040409-CMOS flow1

    Copyright

    © Attribution Non-Commercial (BY-NC)

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The document describes the key steps in the CMOS fabrication process. It details the formation of N-wells and P-wells through implantation, shallow trench isolation to isolate devices, gate oxidation and polysilicon deposition, light doped drain implantation, sidewall spacer formation, and source and drain implantation to form the transistors. The CMOS process has evolved from feature sizes of 0.8 micrometers to 0.18 micrometers on wafers that have increased from 150 to 300 millimeters in diameter.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    80 views55 pages

    Science of Micro Fabrication: 04-04-09 04-04-09 CMOS Process Flows

    Uploaded by

    Vineeth Sarma
    The document describes the key steps in the CMOS fabrication process. It details the formation of N-wells and P-wells through implantation, shallow trench isolation to isolate devices, gate oxidation and polysilicon deposition, light doped drain implantation, sidewall spacer formation, and source and drain implantation to form the transistors. The CMOS process has evolved from feature sizes of 0.8 micrometers to 0.18 micrometers on wafers that have increased from 150 to 300 millimeters in diameter.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 55

    Science of Micro Fabrication

    04-04-09
    CMOS Process Flows

    Sundar Gopalan, Amrita Vishwa Vidyapeetham


    CMOS Technology
    • Driving force: digital logic electronics
    – PC, telecommunication, and internet.
    • Feature size: from 0.8 mm to 0.18 mm
    • Wafer size: from 150 mm to 300 mm

    S. Gopalan, Amrita Vishwa Vidyapeetham, Amritapuri Campus 2


    Modifications to Basic CMOS process
    • Shallow Trench Isolation
    • Vt adjust implant (in channel)
    • Lightly Doped Drain structure
    • Silicide Contacts (SALICIDE process)
    Vt adjust implant

    S. Gopalan, Amrita Vishwa Vidyapeetham, Amritapuri Campus 3


    Epitaxy Deposition

    P-Epi

    P-Wafer

    4
    Mask 1: N-well

    5
    N-well Implantation

    Phosphorus Ions

    Photoresist

    N-Well

    P-Epi
    P-Wafer

    6
    Mask 2: P-well

    7
    P-well Implantation

    Boron Ions

    Photoresist

    P-Well
    N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 8
    Strip PR, Strip Nitride/Pad
    Oxide

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 9
    Pad Oxidation, LPCVD Nitride

    Nitride

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 10
    Mask 3: Shallow Trench Isolation

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 11
    Etch Nitride, Pad Oxide and
    Silicon

    Nitride Nitride

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 12
    HDP-CVD USG Trench Fill
    Undoped Silicate Glass

    USG

    Nitride Nitride

    USG

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 13
    CMP USG, Stop on Nitride

    Nitride Nitride

    USG

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 14
    Strip Nitride and Pad Oxide,
    Clean

    STI USG

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 15
    Mask 4: N-channel VT Adjust

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 16
    Phosphorus Ions

    Photoresist

    STI USG

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 17
    Mask 5: P-channel VT Adjust

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 18
    Boron Ions

    Photoresist

    STI USG

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 19
    Gate Oxidation, LPCVD
    Polysilicon

    Polysilicon

    STI USG

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 20
    Mask 6: Gate & Local Interconnection

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 21
    Etch Polysilicon

    Gate Oxide Photoresist

    Polysilicon gate

    STI USG

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 22
    Mask 7: N-channel LDD

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 23
    N-channel LDD Implantation,
    Arsenic

    Arsenic Ions

    Photoresist

    STI USG

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 24
    Mask 8: P-channel LDD

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 25
    P-channel LDD Implantation,
    BF2+

    BF2+ Ions

    Photoresist

    STI USG

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 26
    Sidewall Spacer

    Sidewall Sidewall
    Polysilicon gate Spacer Polysilicon gate Spacer

    n-LDD n-LDD n-LDD Gate oxide n-LDD


    Gate oxide

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 27
    Mask 9: N-channel Source/Drain

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 28
    N-channel Source/Drain
    Implantation

    Photoresist

    n+ n+ USG p- p-
    STI
    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 29
    Mask 9: P-channel Source/Drain

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 30
    P-channel Source/Drain
    Implantation

    Boron Ions

    Photoresist

    STI n+ n+ USG p+ p+

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 31
    Titanium Salicide Process
    + Ar +
    Ar Ti
    Sidewall Sidewall
    spacer Polysilicon gate spacer Polysilicon gate

    n- n- n- n-
    n+ Gate oxide Gate oxide
    n+ n+ n+

    Ti
    TiSi 2 TiSi 2 TiSi
    TiSi 2 2
    Polysilicon gate Polysilicon gate

    n- n- n- n-
    n+ Gate oxide n+ Gate oxide
    n+ n+

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 32
    BPSG Deposition and Reflow
    Boro Phospho Silicate Glass

    BPSG

    STI n+ n+ USG p+ p+

    BPSG

    STI n+ n+ USG p+ p+

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 33
    Mask 10: Contact Hole

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 34
    Contact Hole Etch, BPSG Etch

    BPSG

    STI n+ n+ USG p+ p+

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 35
    Tungsten deposition

    Titanium/Titanium Nitride

    Tungsten

    BPSG

    STI n+ n+ USG p+ p+

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 36
    Tungsten CMP, TiN/Al deposition

    Titanium/Titanium Nitride TiN Titanium

    Aluminum Copper Alloy

    W BPSG

    STI n+ n+ USG p+ p+

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 37
    Mask 11: Metal 1 Interconnect

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 38
    Metal Etch

    Titanium/Titanium Nitride TiN Titanium

    Al-Cu Alloy

    W BPSG

    STI n+ n+ USG p+ p+

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 39
    PE-TEOS USG
    Dep/Etch/Dep/CMP

    IMD 1 USG Dep/Etch/Dep/CMP

    Al-Cu Alloy

    W BPSG

    STI n+ n+ USG p+ p+

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 40
    Mask 12: Via 1

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 41
    Via Etch, Etch USG

    IMD 1 USG

    Al-Cu Alloy

    W BPSG

    STI n+ n+ USG p+ p+

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 42
    Via Etch, Etch USG
    Metal 2 Al-Cu Alloy

    IMD 1 USG

    M1 Al-Cu Alloy

    W BPSG

    STI n+ n+ USG p+ p+

    P-Well N-Well
    P-Epi
    P-Wafer
    Hong Xiao, Ph. D.
    www2.austin.cc.tx.us/HongXiao/Book.htm 43
    Passivation Dielectric Deposition
    Repeat deposition, patterning and etching for as many metal
    layers as required

    Silicon Nitride

    USG

    Al•Cu Alloy Al•Cu

    Metal 4
    IMD 3 USG

    Metal 3 Al•Cu Alloy

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 44
    Mask 18: Bonding Pad

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 45
    Etch Bonding Pad, Strip PR

    Silicon Nitride

    USG

    Al•Cu Alloy Al•Cu

    Metal 4
    IMD 3 USG

    Metal 3 Al•Cu Alloy

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 46
    Passivation 2 Silicon Nitride

    Passivation 1
    Al•Cu Alloy Al•Cu USG
    Metal 4
    IMD33
    IMD USG
    Ti/TiN
    TiN ARC
    Metal 3 Al•Cu Alloy
    Ti
    IMD 2 USG W
    Ti/TiN

    M2 Al•Cu

    IMD 1 USG W TiSi2

    M1 Al•Cu Alloy Sidewall


    PMD BPSG Spacer, USG
    W
    Poly-Si
    PMD Barrier
    STI n+ n+ USG p+ p+
    Nitride
    P-Well N-Well
    P-Epi
    Hong Xiao, Ph. D.
    P-Wafer
    www2.austin.cc.tx.us/HongXiao/Book.htm 47
    Lead-Tin Alloy Coating

    Lead-tin alloy
    Nitride

    PSG

    Copper 5
    SOD

    SOD

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 48
    PR Coating, A&E, PEB, and Develop
    Photoresist

    Lead-tin alloy
    Nitride

    PSG

    Copper 5
    SOD

    SOD

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 49
    Metal Etch
    Photoresist

    Lead-tin alloy
    Nitride

    PSG

    Copper 5
    SOD

    SOD

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 50
    Strip Photoresist

    Lead-tin alloy
    Nitride

    PSG

    Copper 5
    SOD

    SOD

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 51
    Lead-Tin Alloy Reflow

    Lead-tin alloy
    Nitride

    PSG

    Copper 5
    SOD

    SOD

    Hong Xiao, Ph. D.


    www2.austin.cc.tx.us/HongXiao/Book.htm 52
    -+
    Simplified BJT Flow

    • Triple diffused 3-D method

    – Grow initial oxide, pattern


    – Implant guard rings and
    diffuse

    – Remove oxide, re-grow oxide


    and pattern and etch oxide
    – Collector implant

    53
    -+
    Simplified BJT Flow

    • Collector drive-in diffusion


    • Grow oxide
    • Pattern and etch oxide
    • Base implantation

    • Base drive-in diffusion


    • Oxide formation
    • Pattern, etch and emitter
    implant

    54
    -+
    Simplified BJT Flow

    • Emitter drive-in, grow


    oxide, pattern and
    etch
    • P+ implant for base
    contact
    • Advantages:
    • Deposit contact glass, – Low cost, High yield, Simple
    pattern and etch process
    • Metallization • Disadvantages
    – Parasitic capacitances (E-B
    junction), Low breakdown, Base
    contact resistance
    55

    You might also like