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    Sri Vellappally Natesan College of Engineering: Series Test-Ii March 2016 08.825: Microwave Device and Circuits (T)

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    anupvasu
    This document appears to be an exam for a microwave device and circuits course given in March 2016. It contains instructions for a two hour exam worth 50 total marks, split into two sections. Part A is worth 20 marks and contains 5 short answer questions about stability circles, oscillator conditions, and transmission line implementations. Part B is worth 30 marks and contains 3 long answer questions about coupled transmission lines, capacitor implementations in MICs, and designing and analyzing an amplifier with given scattering parameters over various frequencies.

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    Sri Vellappally Natesan College of Engineering: Series Test-Ii March 2016 08.825: Microwave Device and Circuits (T)

    Uploaded by

    anupvasu
    20 views1 page
    This document appears to be an exam for a microwave device and circuits course given in March 2016. It contains instructions for a two hour exam worth 50 total marks, split into two sections. Part A is worth 20 marks and contains 5 short answer questions about stability circles, oscillator conditions, and transmission line implementations. Part B is worth 30 marks and contains 3 long answer questions about coupled transmission lines, capacitor implementations in MICs, and designing and analyzing an amplifier with given scattering parameters over various frequencies.

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    Question paper for mdc

    Original Title

    2nd Series Mdc 1

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    This document appears to be an exam for a microwave device and circuits course given in March 2016. It contains instructions for a two hour exam worth 50 total marks, split into two sections. Part A is worth 20 marks and contains 5 short answer questions about stability circles, oscillator conditions, and transmission line implementations. Part B is worth 30 marks and contains 3 long answer questions about coupled transmission lines, capacitor implementations in MICs, and designing and analyzing an amplifier with given scattering parameters over various frequencies.

    Copyright:

    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    20 views1 page

    Sri Vellappally Natesan College of Engineering: Series Test-Ii March 2016 08.825: Microwave Device and Circuits (T)

    Uploaded by

    anupvasu
    This document appears to be an exam for a microwave device and circuits course given in March 2016. It contains instructions for a two hour exam worth 50 total marks, split into two sections. Part A is worth 20 marks and contains 5 short answer questions about stability circles, oscillator conditions, and transmission line implementations. Part B is worth 30 marks and contains 3 long answer questions about coupled transmission lines, capacitor implementations in MICs, and designing and analyzing an amplifier with given scattering parameters over various frequencies.

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    © All Rights Reserved
    Download as DOCX, PDF, TXT or read online from Scribd
    Download as docx, pdf, or txt
    of 1

    Name: .

    Reg. No: .

    SRI VELLAPPALLY NATESAN COLLEGE OF ENGINEERING


    SERIES TEST-II MARCH 2016
    08.825: MICROWAVE DEVICE AND CIRCUITS (T)

    Time: 2 hrs

    Maximum marks: 50
    Part A (Answer all questions)

    1. Explain stability circles.


    2. Differentiate between k- test and test for unconditional stability.
    3. Derive the condition for one port negative resistance oscillator.
    4. How can a terminator be constructed by using resistor.
    5. Explain shielded microstrip line.
    (5X 4 = 20)
    Part B (Answer any Three)
    6. Explain the even mode and odd mode of operation in coupled striplines.
    7. Explain how capacitors are implemented in MICs.
    8. Derive the expression for the power gain, available power gain, and the transducer
    power gain.
    9. Design an amplifier to have a gain of 11 dB at 4.0 GHz. Plot constant-gain circles for
    GS = 2 and 3 dB, and GL = 0 and 1 dB. Calculate and plot the input return loss and
    overall amplifier gain from 3 to 5 GHz. The transistor has the following scattering
    parameters (Z0 = 50 ):

    (3X 10 = 30)

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