Chapter 7 Solutions
Chapter 7 Solutions
Chapter 7 Solutions
EERI 322
Problems : Neamen Chapter 7
Exercise 7.1.a
For the circuit shown, answer the questions:
RS = 4kΩ CS = ?
Vo
Vi RP = 4kΩ
Figure 7.2
ii.) Find the magnitude of the transfer function at f = 40 Hz , 80Hz , and 200Hz
Midband gain
⎛ RP ⎞ ⎛ 4k Ω ⎞
⎜ ⎟=⎜ ⎟ = 0.5
⎝ RP + RS ⎠ ⎝ 8k Ω ⎠
⎡ ⎤
⎢ 2π (40)(7.96 × 10−3 ) ⎥
T ( j 40 = ( 0.5 ) ⎢ ⎥ = 0.447
⎢⎣ 1 + ( 2π (40)(7.96 × 10 ) ) ⎥⎦
−3 2
⎡ ⎤
⎢ 2π (80)(7.96 × 10−3 ) ⎥
T ( j80 = ( 0.5 ) ⎢ ⎥ = 0.485
⎢⎣ 1 + ( 2π (80)(7.96 ×10 ) ) ⎥⎦
−3 2
⎡ ⎤
⎢ 2π (200)(7.96 × 10−3 ) ⎥
T ( j 200 = ( 0.5 ) ⎢ ⎥ = 0.498
⎢⎣ 1 + ( 2π (200)(7.96 ×10 ) )
−3 2
⎥⎦
Summary:
f 40 80 200
T ( jf ) 0.447 0.485 0.498
Exercise 7.1.b
For the circuit shown, if the corner frequency is f = 500kHz , determine the value of CP .
RS = 10kΩ
Vo
Vi RP = 10kΩ CP = ?
Figure 7.3
Exercise 7.2
For the circuit shown, the midband gain is −1dB , and the corner frequencies are
f L = 100 Hz and f H = 1MHz .
RS = 1kΩ CS = ?
Vo
Vi RP = ? CP = ?
Figure 7.10
Lower cutoff-frequency
1
fL =
2π ( RS + RP )CS
1 1
∴ CS = = = 173nF
2π f ( RS + RP ) 2π (100)(1k + 8.2k )
Upper cutoff-frequency
1
fH =
2π ( RS || RP )CP
1 1
∴ CP = = = 179 pF
2π f ( RS || RP ) 2π (10 )(1k || 8.2k )
6
Exercise 7.3
For the following circuit:
VCC = 10V
β = 200
VBE(on) = 0.7V R1 RC
VA = ∞ 20kΩ 2kΩ
VO
RSi = 100Ω CC
47μF
R2 RE
vi
2.2kΩ 100Ω
Figure 7.21
Small-signal equivalent
First do a DC analysis
RTH = R1 || R2 = 2.2k Ω || 20k Ω = 1.98k Ω
⎛ R2 ⎞ ⎛ 2.2 ⎞
VTH = ⎜ ⎟ VCC = ⎜ ⎟ (10) = 0.991V
⎝ R1 + R2 ⎠ ⎝ 2.2 + 20 ⎠
V − VBE ( on ) 0.991 − 0.7
I BQ = TH = = 13.2μ A
RTH + (1 + β ) RE 1.98 + (201)(100)
I CQ = β I BQ = (200)(13.2μ A) = 2.64mA
Calculate resistances
Rib = rπ + (1 + β ) RE = 1.97 k + (201)(100) = 22.1k Ω
RB = R1 || R 2 = 1.98k Ω
Ri = RB || Rib = 1.98k Ω || 22.1k Ω = 1.817 k Ω
Therefore
⎛ β RC ⎞ ⎛ RB ⎞
Av (max) = − ⎜ ⎟⎜ ⎟
⎝ RSi + Ri ⎠ ⎝ ( RB + Rib ) ⎠
⎛ (200)(2000) ⎞ ⎛ 1980 ⎞
= −⎜ ⎟⎜ ⎟
⎝ (100 + 1817 ⎠ ⎝ (1980 + 22100) ⎠
= − ( 208.65 ) ( 82.22 ×10−3 )
= −17.2
Exercise 7.4
The drain current is given as
I DQ = K n (VGS − VTN ) 2
Given VDQ = 0
Exercise 7.9
A bipolar transistor has parameters β 0 = 150 , Cπ = 2 pF , and Cμ = 0.3 pF , and is
biased at I CQ = 0.5mA . Determine the beta cutoff frequency.
Diffusion resistance
β 0VT
rπ =
I CQ
(150)(0.026)
=
(0.5 ×10−3 )
= 7.8k Ω
Exercise 7.10
A BJT is biased at I C = 1mA , and its parameters are: β 0 = 150 , Cπ = 4 pF , and
Cμ = 0.5 pF . Determine f β and fT .
Diffusion resistance
β 0VT
rπ =
I CQ
(150)(0.026)
=
(1× 10−3 )
= 3.9k Ω
Cutoff frequency
fT = β 0 f β
= (150)(9.07 ×106 )
= 1.36GHz
Exercise 7.11
DC Analysis
Thevenin resistance
RTH = R1 || R2 = 200k Ω || 220k Ω = 104.8k Ω
Thevenin voltage
⎛ R2 ⎞ ⎛ 220 ⎞
VTH = ⎜ ⎟ VCC = ⎜ ⎟ (5) = 2.62V
⎝ R1 + R2 ⎠ ⎝ 200 + 220 ⎠
Base current
VTH − VBE 2.62 − 0.7
I BQ = = = 9.316μ A
RTH + (1 + β ) RE 105 + (101)(1)
Collector current
I CQ = β I BQ = (100)(9.316μ A) = 931μ A
Small-signal parameters
Transconductance
I CQ 931μ A
gm = = = 35.83mA / V
VT 0.026
Diffusion resistance
β VT (100)(0.026)
rπ = = = 2.79k Ω
I CQ 932 μ A
Miller capacitance
CM = Cμ [1 + g m ( RC || RL ) ]
= (2 × 10−12 ) ⎡⎣1 + (35.83 × 10−3 )(2200 || 4700) ⎤⎦
= (2 × 10−12 ) ⎡⎣1 + (35.83 ×10−3 )(1498) ⎤⎦
= 109 pF
3dB frequency
Base resistance
RB = rS || R1 || R2 = 100k Ω || 200k Ω || 220k Ω = 51.17k Ω
Frequency
1
f3dB =
2π ( RB || rπ ) ( Cπ + Cμ )
1
=
2π ( 51.17k Ω || 2.79k Ω )(10 + 109 ) ×10−12
= 506GHz
Exercise 7.12
Small-signal parameters
Transconductance
g m = 2 K n I DQ
Exercise 7.13
DC Analysis
Gate voltage
⎛ R2 ⎞
VG = ⎜ ⎟ VDD
⎝ R1 + R2 ⎠
⎛ 166 ⎞
=⎜ ⎟ (10 )
⎝ 166 + 234 ⎠
= 4.15V
Rearrange
VG − VGS
ID =
RS
Transconductance
g m = 2 K n (VGS − VTN )
= 2(0.5 × 10−3 )(3.55 − 2)
= 1.55mA / V
Miller capacitance
CM = Cgd (1 + g m ( RD || RL ) )
= ( 0.1 p ) (1 + (1.55m )( 4k || 20k ) )
= 0.617 pF
Input resistance
RG = R1 || R2
= 234k Ω ||166k Ω
= 97.1k Ω
Time constant
τ P = ( RG || Ri ) ( Cgs + CM )
= ( 97.1k ||10k )(1.617 p )
= 14.7 ns
Exercise 7.14
DC Analysis
Base voltage
VTH = 0V
Input resistance
RTH = R1 || R2
= 20k Ω || 20k Ω
= 10k Ω
Base current
VTH − VBE − VEE
I BQ =
RTH + (1 + β ) RE
0 − 0.7 − (−5)
=
10k + (126)(5k )
= 6.72 μ A
Collector current
I CQ = β I BQ
= (125)(6.72μ A)
= 840μ A
Small-signal parameters
Diffusion resistance
β VT (125)(0.026)
rπ = = = 3.87 k Ω
I CQ 840 μ
Transconductance
I CQ 840 μ A
gm = = = 32.3mA / V
VT 0.026
Output resistance
VA 200
ro = = = 238k Ω
I CQ 840 μ
Output resistance
RL ' = ro || RC || RL
= 238k || 2.3k || 5k
= 1.565k Ω
Miller Capacitance
CM = Cμ (1 + g m RL ')
= ( 3 p )(1 + (32.3m)(1.565k ) )
= 155 pF
Input resistance
RB = R1 || R2
= 20k || 20k
= 10k Ω
Time constant
τ P = Req (Cπ + CM )
= (736)(24 p + 155 p)
= 131.7 ns
Exercise 7.15
DC Analysis
Base current
10 − 0.7 9.3
I BQ = = = 8.37 μ A
RB + (1 + β ) RE 100k + (101)(10k )
Collector current
I CQ = β I BQ = (100)(8.37mA) = 837 μ A
Small-signal parameters
Diffusion resistance
β VT (100)(0.026)
rπ = = = 3.10k Ω
I CQ 837 μ
Transconductance
I CQ 837 μ
gm = = = 32.19mA / V
VT 0.026
Exercise 7.16
DC Analysis
Base voltage (Q1)
⎛ R3 ⎞ + ⎛ 7.92k ⎞
VB1 = ⎜ ⎟ (V ) = ⎜ ⎟ (12) = 0.9502V
⎝ R1 + R2 + R3 ⎠ ⎝ 58.8k + 33.3k + 7.92k ⎠
Small-signal parameters
Diffusion resistance
β VT (100)(0.026)
rπ = = = 5.2k Ω
I CQ 500m
Transconductance
I C 500μ
gm = = = 19.23mA / V
VT 0.026
Miller capacitance
CM 1 = 2Cμ1 = 6 pF
Base resistance
RB1 = R2 || R3 = 33.3k || 7.92k = 6.398k Ω