RFIC

It is RFIC course notes in Persian language (Farsi) which includes: History of Wireless Systems - Noise Figure (NF) - Nonlinearity - RF Transceiver Architectures - RF Standards - Low Noise Amplifier (LNA) - Mixer - Oscillator - Phase Locked Loop (PLL) - Synthesizer - Power Amplifier (PA).

See:
http://dx.doi.org/10.13140/RG.2.2.11677.36320

In this paper a design of low power 2.4GHz (RF) down conversion Gilbert Cell mixer, implemented in 0.18μm CMOS technology with 1.8V supply voltage is presented. The obtained result shows a conversion gain equal to 6.7dB and third order Input intercept point -1db, power consumption of 3.86mW at 1.8V supply voltage. The 50Ω matched impedance condition is applicable. Result shows a good potential of this CMOS mixer and justify its use for low-power wireless communications.

Two generations of a wideband low noise amplifier (LNA) employing noise canceling principle have been synthesized. The first generation design was fabricated in a 0.35 µm SiGe BiCMOS process. It has a measured peak S 21 of 17 dB and noise figure less than 3 dB over a bandwidth of 2.6 GHz while consuming 32.5 mW of power from a 2.5 V supply. The calculated figure of merit (FOM) is better than many reported wideband LNAs, including a few from even more advanced processes. The synthesis design constraints were improved based on the analysis of the first generation design. A second generation design was synthesized with the updated constraints. Its simulation results show that its FOM is better than its predecessor.

In this paper, a 4.2–5.4 GHz, −Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit is designed with AMS 0.35 μm SiGe BiCMOS process that includes high-speed SiGe Heterojunction Bipolar Transistors (HBTs). According to post-layout simulation results, phase noise is −110.7 dBc/Hz at 1 MHz offset from 5.4 GHz carrier frequency and −113.4 dBc/Hz from 4.2 GHz carrier frequency. A linear, 1200 MHz tuning range is obtained from the simulations, utilizing accumulation-mode varactors. Phase noise was also found to be relatively low because of taking advantage of differential tuning concept. Output power of the fundamental frequency changes between 4.8 dBm and 5.5 dBm depending on the tuning voltage. Based on the simulation results, the circuit draws 2 mA without buffers and 14.5 mA from 2.5 V supply including buffer circuits leading to a total power dissipation of 36.25 mW. The circuit layout occupies an area of 0.6 mm2 on Si substrate, including DC and RF pads. © 2007 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2007.

A voltage-controlled oscillator (VCO) with a central frequency of 56 GHz and a 17% tuning range is presented. The oscillation frequency is tuned both by an analog input and by a 3-bit digital control bus using the same type of differential varactors. It achieves a record figure of merit, considering tuning range of 186.8 dBc/Hz and is able to address the full wireless high-definition multimedia interface band . The VCO is implemented in a 65-nm bulk CMOS process and dissipates 15 mW from a 1.2-V supply. Both fixed and parameterized electromagnetic models for inductors, interconnection structures, and transmission lines have been embedded in the classical design flow including layout verification and extraction, resulting in a very high level of simulation accuracy.

Gândită din perspectiva conceptuală a teoriei circuitelor, lucrarea se focalizează cu precădere pe calculul impedanţelor de intrare ale inductanţelor simulate implementate în tehnologie CMOS.
Primul capitol este o abordare detaliată a conceptului de girator
(ideal), întrebările propuse considerându–se suficiente pentru
înţelegerea acestui concept.
Capitolul 2 face trecerea de la partea conceptuală, pur teoretică a
giratorului, la cea de circuit, abordându–se etajele elementare utilizate
la implementările practice cu girator.
Capitolul 3 este o trecere în revistă, de dorit una exhaustivă, a
inductanţelor active implementate cu un singur tranzistor MOS.
Capitolul 4 este un review al topologiilor de inductanţe active
implementate cu două tranzistoare, constituind esenţa prezentului
material.
Capitolul 5 este dedicat inductanţelor active implementate cu
trei tranzistoare, având o întindere mult mai redusă decât capitolul
anterior.
Materialul propus oferă un background suficient pe direcţia inductanţelor active, pentru aplicaţiile RF, conţinând totodată o bibliografie relevantă pentru domeniul abordat.

The goal is to illustrate new errors about using the figures-of-merit NF and IIP, by investigating an AGC-less microwatt ultrawideband gm-boosted CMOS RF system with noise/distortion cancellation. The system composed of limiter and LNA is designed for 0.3–10.7 GHz at 1.8 V. Thanks to the limiter, the impact of noises and distortions is cancelled and the LNA acts linear without any saturation or block, as well as, it becomes AGC-less. Additionally, achievements prove that NF and IIP sometimes can be accompanied by error, hence engineers must always consider all aspects of a system together during their evaluations. Although this work is not experimental, it applies different methods such as “Regenerating”, “Comparing Calculations with Simulations” and “Monte Carlo” to demonstrate the reliability of achievements for applying in a SAW-less RFIC.

{{{{{ Keywords: RFIC, Limiter, Ultrawideband (UWB), Low Noise Amplifier (LNA), SAW-less, AGC-less, Microwatt, Noise and Distortion Cancellation, gm-Boosting, T‐Match, π‐Match, CMOS, Figure-of-Merit, Noise Figure (NF) Error, Input Intercept Point (IIP) Error, IET Communications, Wiley, Shahab Shahrabadi }}}}}

See:
https://doi.org/10.1049/cmu2.12308

During this study, various narrowband single-ended inductive source degenerated Low Noise Amplifiers (LNAs) for GSM and S-band low earth orbit (LEO) space applications have been designed, simulated and compared using Mietec CMOS 0.7 μm process and the Cadence/BSIM3v3. To get more realistic results, parasitic effects due to layout have been calculated and added to the simulations. Also, considering the inductive source degenerative topology, most of the attention is given on the modeling of planar spiral inductor by lumped element circuits. Moreover to decrease the substrate effects, the inductors have been surrounded by grounded guard rings and have patterned ground shield (PGS) under them. The simulation results of LNA including the parasitic effects indicate a forward gain of 9 dB with noise figure of 4.5 dB while drawing 18 mW from+3 V supply at 2210 MHz. The area occupied is 1.8 mm×1.6 mm with pads, 1.3 mm×1.2 mm without pads.

Is presented in this paper a new Ultra Wide Band (UWB) transmitter circuit design to a small Vivaldi antenna for remote acquisition of vital signals through telemetry by microwaves. Recently, interest in research on generation and transmission of UWB pulses has increased, especially for application in the remote sensing of heartbeat signals (e.g. of an operator of a drilling rig in an industrial oil plant off-shore) and the measurement of respiration rate (e.g. of the crew of an aircraft. This technique consists of a transmitter (this work) and a receiver for perform telemetry for estimating the vital signs though detection of the movements of heart and lung. The system consists of a second Gaussian Pulse Generator (PG) circuit installed on a Vivaldi planar antenna. The circuit was designed using 180nm Mosis-IBM process and the planar antenna array was designed with copper and RO3206 substrate. Spice simulations show the generation of pulses with 156,6mVpp amplitudes and 200ps width, and a central frequency of 6GHz. The dynamic energy consumption is around 0.7pJ and average power consumption of 3mW per pulse using 2V power supply at pulse repetition rate (PRR) of 100MHz. The electromagnetic simulations show the Main Lobe with an average magnitude of 5.1dBi at 6GHz, and a beam angular width of the 138º x 62º.

Here it is proposed a conceptual model for geographic location of points in two dimensions, by the use of triangulation. The triangulation method here described operates on an Ultra-wideband (UWB) Timed-array module with center frequency of 4GHz. The technique consists in two arrays of planar antennas located at predetermined points, which serve as receptor for new portable UWB transmitter equipped with an omnidirectional planar antenna. The relative coordinates are then computed using proposed mathematical models. The transmitter circuit was designed using 180nm Complementary Metal Oxide Semiconductor (CMOS) – IBM (7WL_5LM_MA) process and the planar antennas were designed on FR-4 substrate. Post-Layout Spice circuit simulations show the generation of pulses with 94.5mVpp amplitudes and 514ps width. The consumption is around 677µW per pulse using a 1.8V power supply at 100MHz pulse repetition rate (PRR). 3D electromagnetic simulations were performed using CST Microwave Studio 2011, with an accuracy of less than 0.1m.

... The circuit consists of a flip-chip assembly of a BAW Solidly Mounted Resonator (SMR) die on the top of a BiCMOS 0.25µm chip. The potentialities of such filter architecture has been tested for the WCDMA standard. ... The Butterworth Van Dyke (BVD) electrical model (Fig. ...

A finite impulse response (FIR) equalizer utilizing 0.18 mum SiGe BiCMOS provides unparalleled performance as a building block for analog electronic dispersion compensation (EDC) applications. A new track-and-hold (T/H) topology improves on the existing performance limitations of the switched emitter follower (SEF) architecture. The new T/H achieves extended dynamic range, for higher input bandwidths, at lower power consumption. The FIR circuit has been included as a building block in the implementation of an analog EDC IC that is the world's first demonstration of 10.7 Gbit/s error free operation over 400 km of uncompensated SMF fiber.

This article introduces a performance investigation of textile patch antennas using double layer fabrics for wrist-wearable applications. Two fabric substrates [top layer: conducting part (CP), bottom layer: fabric part (FP)] are used for an antenna design, and these are assembled using an adhesive. We chose polyester (PES) as the top fabric layer (CP) because the PES is a cloth of fine texture, which is useful for the steady screen printing of the antenna geometry. Four fabric samples (Fabric 1-4) were selected from actual clothes (i.e., pants and shirts), and these were used for the bottom fabric layer (FP). The textile antennas were simulated and measured to verify their performance and to compare this with that of the common microwave substrate. Moreover, a textile antenna was tested under various bent conditions as well as regarding its specific absorption rate for on-body environments, such as the wrist and ankle. Based on the measurement results, it was confirmed that the textile antennas with double layer fabrics have good electrical performance, even in bent conditions, and can be used in wearable-fabric applications, including body centric communications.

This dissertation presents new circuit architectures and techniques for improving the performance of several key BiCMOS RFIC building blocks used in radar and wireless communication systems operating up to millimeter-wave frequencies, and the development of an advanced, low-cost and miniature millimeter-wave concurrent dualband transmitter for short-range, high-resolution radar and high-rate communication systems. A new type of low-power active balun consisting of a common emitter amplifier with degenerative inductor and a common collector amplifier is proposed. The parasitic neutralization and compensation techniques are used to keep the balun well balanced at very high frequencies and across an ultra-wide bandwidth. A novel RF switch architecture with ultra-high isolation and possible gain is proposed, analyzed and demonstrated. The new RF switch architecture achieves an ultra-high isolation through implementation of a new RF leaking cancellation technique. A new class of concurrent dual-band impedance matching networks and technique for synthesizing them are presented together with a 25.5/37-GHz concurrent dual-band PA. These matching networks enable simultaneous matching of two arbitrary loads to two arbitrary sources at two different frequencies, utilizing the impedance-equivalence properties of LC networks that any LC network can be equivalent to an inductor, capacitor, open or short at different frequencies. K-and Ka-band ultra-low-leakage RF-pulse formers capable of producing very narrow RF pulses in the order of 200 ps with small rising and falling vi I would like to send my special thanks to Prof.

As process nodes continue to shrink to improve transistor density and performance, it is causing an increase in resistance of interconnects. At higher voltages devices speed up even more, causing interconnect to become the frequency limiter. Relatively in every node the interconnect delays continue to increase. In High Speed designs timing optimization is done across several modes to coverage design for multiple PVT points. With growing demand for Internet of Things (IoT) and autonomous driving, the need for high speed designs to be reliable and dependable at extreme conditions of high voltage and temperature continues to increase. Due to this the path profile across multiple PVT have changed with special focus on high voltage due to interconnect dominance. While most tools are capable of multi corner optimization, the increase in number of modes has challenges and more enhancements are needed to address interconnect. One such area is Interconnect scaling with repeater optimization at Section and Full chip levels. While previous papers have looked at several techniques to improve timing and slope for a given corner [1], [2], [3], this paper describes a formula to design the repeater solution to optimize delay scaling across different corners such as High Voltage and Typical Voltage to maximize performance.

In this paper, a miniature, multi-functional Si-based packaging technology which can reduce the size and cost and increase the performance of a wide range of millimeter wave systems is proposed. High density capacitors, low temperature coefficient resistors, high-Q inductors, low-loss transmission lines, filters and antennas can all be built within the Si package using standard semiconductor fabrication methods with very high manufacturing precision compared to conventional packaging technologies. Fine pitch metal bumps can be used to attach RF IC's and other components, while bonding can provide hermetic sealing where required. Vias through the Si package eliminates inductive bond wires and minimize parasitics at millimeter wave frequencies. By integrating both antenna and an RF IC in one single package, all high frequency signals are confined within the package and only baseband signals connected to the external package.

This paper describes a timing recovery system (TRS) based on an analog approximation of the minimum mean squared error (MMSE) algorithm. The TRS has been fabricated in a 0.18µm, 150GHz SiGe BiCMOS process as part of a high performance Class-2 Partial Response Maximum Likelihood (PRML) dispersion tolerant optical receiver. This decision directed clock recovery architecture was implemented for the (1+D) 2 partial response polynomial. The TRS supports all XFI data rates [9.95, 11.09]Gbps and has been verified up to 12.5Gbps. The TRS is functional at OSNRs as low as 11dB and has been verified in the full PRML receiver at a BER of 10 -4 over 400km of uncompensated single mode fiber (SMF). It dissipates 372mW from a dual 3.3V and 1.8V supply and complies with or exceeds all XFI receiver Jitter specifications for Telecom (SONET OC-192 and G.709 "OTU-2") and Datacom (Ethernet 802.3ae or Fiber Channel). Index Terms -CDR, MLSE, partial response signaling, PLL, PRML, PRS, timing recovery. f3dB˜2.3 MHz J GE N = 4.9 mUI (RMS) J PEAKING < 0. 01 dB f3dB˜7.6 MHz J GEN = 6.4 mUI (RMS) J PE A K I N G < 0. 01 d B J DSU ONT-506 TESTER Ji tter Generat ion: Measure filter passband [10K, 80M] Hz Jitter Generation: Measure filter passband [10K, 80M] Hz J DSU ONT-506 TESTER (2 31 -1) PRBS over 2 40Km of SMF Da ta-Ra te: 10. 71Gb/s (2 31 -1) PRBS over 2 40Km of SMF Data-Rate: 11.09Gb/s

In this paper, an integrated 2.2-5.7 GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mm SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same circuit, is a novel approach for wideband VCOs. Based on the post-layout simulation results, the VCO can be tuned using a DC voltage of 0 to 3.3 V for 5 different frequency bands (2.27-2.51 GHz, 2.48-2.78 GHz, 3.22-3.53 GHz, 3.48-3.91 GHz and 4.528-5.7 GHz) with a maximum bandwidth of 1.36 GHz and a minimum bandwidth of 300 MHz. The designed and simulated VCO can generate a differential output power between 0.992 and À6.087 dBm with an average power consumption of 44.21 mW including the buffers. The average second and third harmonics level were obtained as À37.21 and À47.6 dBm, respectively. The phase noise between À110.45 and À122.5 dBc/Hz, that was simulated at 1 MHz offset, can be obtained through the frequency of interest. Additionally, the figure of merit (FOM), that includes all important parameters such as the phase noise, the power consumption and the ratio of the operating frequency to the offset frequency, is between À176.48 and À181.16 and comparable or better than the ones with the other current VCOs. The main advantage of this study in comparison with the other VCOs, is covering 5 frequency bands starting from 2.27 up to 5.76 GHz without FOM and area abandonment. Output power of the fundamental frequency changes between À6.087 and 0.992 dBm, depending on the bias conditions (operating bands). Based on the post-layout simulation results, the core VCO circuit draws a current between 2.4-6.3 mA and between 11.4 and 15.3 mA with the buffer circuit from 3.3 V supply. The circuit occupies an area of 1.477 mm 2 on Si substrate, including DC, digital and RF pads.

We report the design and experimental results of a narrow linewidth single-mode slotted Fabry-Pérot laser by using deep etched trenches. Good performances in lasing threshold, side-mode suppression ratio, and linewidth are obtained. The deep trench is effective in reducing the cavity loss compared to the previously investigated shallow etched slots, resulting in a lower threshold and a narrower linewidth (down to ∼80 kHz). Since no grating and multiple epitaxial growth are required, such a simple, compact, and monolithic semiconductor laser with narrow linewidth may have potential applications in coherent communication systems.

2008). A 44.5 GHz differntially tuned VCO in 65nm bulk CMOS with 8% tuning range. In Proceedings of the EEE Radio Frequency 3BAbstract -This paper presents a low power, low phase noise mm-wave voltage controlled oscillator. The VCO can be tuned from 41 to 44.5 GHz (8% tuning range) and utilizes a differential tuning mechanism based on varactors and fixed MIM capacitors. Fabricated in a bulk CMOS 65nm technology, it consumes 3.6 mW and exhibits a phase noise of -106 dBc/Hz at 1 MHz offset from a 41.2 GHz carrier. The resulting FOM is -192.7 dBc/Hz, which is the best reported value for VCOs operating above 40 GHz. 4BIndex Terms -CMOS integrated circuits, Millimeter wave oscillators, Phase locked loops, Phase noise, Voltage controlled oscillators.

This paper presents a methodology that allows the determination of a package representative matrix. The methodology is based on a set of calibration measurements, picked up at the external pins of the package, of a set of known integrated circuits. The obtained representation of the package can be used for a correct measurement of the embedded devices or to improve the design of integrated circuits. The technique is demonstrated by the de-embedding of a packaged passive integrated inductor and the design of a low noise amplifier. The measurements sets were obtained through computer simulations. The effects of added noise on data, like measurement errors, are also investigated, and an approximate methodology, able to reduce these effects, is suggested. Index Terms Calibration, RFIC, MMIC, packages, package modeling I. INTRODUCTION The ubiquity of wireless communication systems increased the need for bandwidth. Accordingly the frequency of operation of radio-frequency integrated circuits (RFIC's) is heightened. Due to the higher operating frequency, packaging effects can not be neglected in predicting or assessing the RFIC performance. On the other hand, while there are many simulation tools to electrically characterize a package, a trustful protocol for the measurement of the network parameters of a stand-alone package is not available.

In this paper, an integrated 2.2-5.7 GHz multi-band differential LC VCO for multi-standard wireless communication systems was designed utilizing 0.35 mm SiGe BiCMOS technology. The topology, which combines the switching inductors and capacitors together in the same circuit, is a novel approach for wideband VCOs. Based on the post-layout simulation results, the VCO can be tuned using a DC voltage of 0 to 3.3 V for 5 different frequency bands (2.27-2.51 GHz, 2.48-2.78 GHz, 3.22-3.53 GHz, 3.48-3.91 GHz and 4.528-5.7 GHz) with a maximum bandwidth of 1.36 GHz and a minimum bandwidth of 300 MHz. The designed and simulated VCO can generate a differential output power between 0.992 and À6.087 dBm with an average power consumption of 44.21 mW including the buffers. The average second and third harmonics level were obtained as À37.21 and À47.6 dBm, respectively. The phase noise between À110.45 and À122.5 dBc/Hz, that was simulated at 1 MHz offset, can be obtained through the frequency of interest. Additionally, the figure of merit (FOM), that includes all important parameters such as the phase noise, the power consumption and the ratio of the operating frequency to the offset frequency, is between À176.48 and À181.16 and comparable or better than the ones with the other current VCOs. The main advantage of this study in comparison with the other VCOs, is covering 5 frequency bands starting from 2.27 up to 5.76 GHz without FOM and area abandonment. Output power of the fundamental frequency changes between À6.087 and 0.992 dBm, depending on the bias conditions (operating bands). Based on the post-layout simulation results, the core VCO circuit draws a current between 2.4-6.3 mA and between 11.4 and 15.3 mA with the buffer circuit from 3.3 V supply. The circuit occupies an area of 1.477 mm 2 on Si substrate, including DC, digital and RF pads.

This paper presents a broadband, highly linear amplifier suitable for multi-standard mm-wave applications such as car radar, LMDS and satellite return channel. It can also be utilized as an efficient wideband output buffer, for measurements of mm-wave circuit components. It exhibits a 3-dB bandwidth of 40 GHz with a pass-band gain of 6 dB. The presented amplifier is highly linear with an IP3 of +18 dBm. It has been implemented in a bulk 90nm CMOS LP (low power) technology and consumes 3.3 mW from a 1.2 V supply.

The importance of optical technology is reflected by it being one of Malaysia's Ministry of Science, Technology and Innovation Strategic Research Areas. Analogous to the silicon chip, the impetus now is to achieve multi functionalities via high density integrated optical devices, with processing rates that are orders of magnitude faster compared to their electronics counterparts. These optical devices are generally based on light guiding channels in a multi-layer refractive index planar structure. They include optically passive structures/devices such as charmel waveguides and multiplexers as well as active ones, such as planar waveguide lasers and amplifiers. They have wide ranging applications, from communications to sensing as well as defence.

The dependence of erbium-doped fiber amplifier performance on amplifier self-saturation is studied experimentally by tuning the pump wavelength over a 5-nm band centered at 980 nm. Gain and noise figure are degraded at the peak pump absorption wavelength, which shows the strongest effect of amplifier self-saturation. It is shown experimentally that tuning the pump wavelength away from the peak pump absorption provides 1–2 dB improvement in pump-to-signal conversion. The effect of amplifier self-saturation is also dependent on the signal wavelength where high gain and noise figure penalties are obtained at the 1530-nm ( ± 5 nm) band.

Wideband multiwavelength Brillouin-Erbium fiber laser (BEFL) utilizing a linear cavity is presented, highlighting the usage of higher Brillouin and lower erbium doped-fiber pump powers to achieve higher lasing spectral bandwidth. A tuning range of 60 nm has been obtained from 1525 to 1585 nm. The dependency of the Stokes signal tuning range on the laser's pumping power is also elaborated. The wide tuning range of the proposed BEFL has potential in dense wavelength division multiplexing communication systems.

This paper presents a new beamforming transmitter, Ultra Wide Band (UWB) pulse generator for contactless radar monitoring applications of vital signals. The system consists of a programmable delay circuit (PDC or τ), UWB pulse generator circuit and an array of Vivaldi planar antennas. Also, a new CMOS PDC controller is developed in order to provide pulse beamforming. The circuit was designed using 0.18μm CMOS process and the planar antenna array was designed with copper and FR-4 substrate. Spice circuit simulations show the generation of pulses with 136mVpp amplitudes and 350ps width. The generated pulse spectrum complies with the Federal Communications Commission (FCC) spectrum mask in the 6-10GHz range. The dynamic energy consumption is around 0.4pJ per pulse using 2V power supply at pulse repetition rate (PRR) of 100MHz. Electromagnetic simulations using CST MW 2010 shows the Main Lobe with an average magnitude of 12dBi, 30° × 32° angular width, and a beam steering between -15° and +25° for θ, and between -20° and +20° for the φ angles. This system can be applied to human monitoring in hospitals, ports and airports, industrial plants - like refineries and oil platforms - and military units as well.

Wideband multiwavelength Brillouin-Erbium fiber laser (BEFL) utilizing a linear cavity is presented, highlighting the usage of higher Brillouin and lower erbium doped-fiber pump powers to achieve higher lasing spectral bandwidth. A tuning range of 60 nm has been obtained from 1525 to 1585 nm. The dependency of the Stokes signal tuning range on the laser's pumping power is also elaborated. The wide tuning range of the proposed BEFL has potential in dense wavelength division multiplexing communication systems.

The research on the design of receiver front-ends for very high data-rate communication in the 60 GHz band in nanoscale Complementary Metal Oxide Semiconductor (CMOS) technologies is going on for some time now. Although a multitude of 60 GHz front-ends have been published in recent years, they are not consequently optimized for low power consumption. Thus, these front-ends dissipate too much power for battery-powered applications like handheld devices, mobile phones, and wireless sensor networks. This article describes the design of a direct conversion receiver front-end that addresses the issue of power consumption, while at the same time permitting low cost (due to area minimization by the use of spiral inductors). It is implemented in a 65 nm CMOS technology. The realized front-end achieves a record power consumption of only 43 mW including low-noise amplifier (LNA), mixer, a voltage controlled oscillator (VCO), a local oscillator (LO) buffer, and a baseband buffer (without this ...

Here it is proposed a conceptual model for geographic location of points in two dimensions, by the use of triangulation. The triangulation method here described operates on an Ultra-wideband (UWB) Timed-array module with center frequency of 4GHz. The technique consists in two arrays of planar antennas located at predetermined points, which serve as receptor for new portable UWB transmitter equipped with an omnidirectional planar antenna. The relative coordinates are then computed using proposed mathematical models. The transmitter circuit was designed using 180nm Complementary Metal Oxide Semiconductor (CMOS) – IBM (7WL_5LM_MA) process and the planar antennas were designed on FR-4 substrate. Post-Layout Spice circuit simulations show the generation of pulses with 94.5mVpp amplitudes and 514ps width. The consumption is around 677µW per pulse using a 1.8V power supply at 100MHz pulse repetition rate (PRR). 3D electromagnetic simulations were performed using CST Microwave Studio 2011, ...

In this paper, we propose a simple approach for achieving multiwavelength tunable Brillouin-Erbium fiber lasers utilizing fiber loop mirror technique. The impact of Brillouin gain contributed by the change of single-mode fiber length on the number of channels is explained. A low threshold operation of 3.5, 4 and 8 mW is achieved at 25, 8.8 and 1.9 km respectively. Simultaneous oscillation of 20, 21 and 35 channels with equally channel spacing of 0.088 nm is obtained at the optimum Brillouin pump power and Brillouin pump wavelength for 1.9, 8.8 and 25 km respectively.

A 6th order low-pass 1.6 to 3.2GHz g m -C filter for fiber optic adaptive EDC receivers cascades three Bi-Quads permitting reduction of group delay variation down to 10ps. Cut-off frequency is tuned by switching CMOS varactors polarity. THD is below -40dB at 0.9V pp-diff output. CTF is implemented in a 0.18 m SiGe process, it occupies 0.17mm 2 and consumes 0.3W from 3.3V supply.

A fully-integrated, 3.1-5GHz Impulse-Radio UWB transceiver with on-chip flash ADC is designed in 90nm-CMOS. A new scheme for receiver phase acquisition is proposed that uses pulse injection-locking to synchronize the receive clock with the transmitted data, eliminating the need for clock/data recovery (CDR). Occupying 2mm 2 die area, the transceiver achieves a maximum data rate of 500 Mbps, energy efficiency of 0.18nJ/b at 500Mbps, and a RX-BER of 10 −3 across a distance of 10cm at 125Mbps.

A Finite Impulse Response (FIR) equalizer utilizing 0.18μm SiGe BiCMOS provides unparalleled performance as a building block for analog Electronic Dispersion Compensation (EDC) applications. A new track-and-hold (T/H) topology improves on the existing performance limitations of the Switched Emitter Follower (SEF) architecture. The new T/H achieves extended dynamic range, for higher input bandwidths, at lower power consumption. The FIR circuit has been included as a building block in the implementation of an analog EDC IC that is the world's first demonstration of 10.7 Gbit / s error free operation over 400 km of uncompensated SMF fiber.

... Shinwon Kang, Jun-Chau Chien, and Ali M. Niknejad ... As the LC VCO frequency increases up to 100GHz, the Q of accumulation-mode MOS (AMOS) varactors is significantly degraded and goes down to 3~4 in this process [6], but the Q of inductors increases. ...

Liquid crystal-based integrated optical devices offer the potential for high speed and dynamically tunable optical switches in modern telecommunications networks. Here, electrically tunable devices have major advantages over their thermal counterparts, with superior response times and low operating voltages (~100V). Our approach to achieving such devices is to fabricate planar optical waveguides with integrated Bragg gratings via direct UV writing1 into silica-on-silicon samples with evanescent field coupling into a liquid crystal overlay through an etched window (Fig. 1(a)). Such electrically tunable devices work on the principle of shifting the Bragg wavelength by modifying the effective index of a waveguide in a multilayer substrate. Electrically controlled liquid crystal birefringence modifies the waveguide effective index, producing a Bragg wavelength shift. In our early samples, Merck 18523 nematic liquid crystal is used as it has a compatible refractive index to silica (n=1.49 at λ=1550nm). Homeotropic alignment of the liquid crystal is provided by application of a surfactant layer.

We demonstrate a continuous wave tunable fiber optical parametric oscillator in a Fabry-Perot cavity consisting of a 500-m highly nonlinear fiber. In this work, the pump propagates in both directions together with the signal, thus making full use of its parametric gain. The resultant laser peak power is uneven across the wavelength range of interest due to wavelength-dependent phase modulation by the single-mode fiber sections in the cavity. This can be solved by filtering the idler spectral component from the oscillating cavity.

In this work, we present an alternative approach in which a groove is cut using a polishing saw blade to give a vertical, high optical quality trench. Optical waveguides are then UV written to allow evanescent lateral access of the mode to a fluid placed in the trench. This seemingly subtle change in geometry provides greatly increased flexibility to tailor the interaction between the optical mode and the surrounding material, by, for example, changing the mode size and the allowing couplers or tapers to be used.

We demonstrate a simplified algorithm to manifest the contribution of amplified spontaneous emission in variable gain-flattened Erbium-doped fiber amplifier (EDFA). The detected signal power at the input and output ports of EDFA comprises of both signal and noise. The generated amplified spontaneous emission from EDFA cannot be differentiated by photodetector which leads to underestimation of the targeted gain value. This gain penalty must be taken into consideration in order to obtain the accurate gain level. By taking the average gain penalty within the dynamic gain range, the targeted output power is set higher than the desired level. Thus, the errors are significantly reduced to less than 0.15 dB from 15 dB to 30 dB desired gain values.