Nanoelectronics

We show that a ballistic quantum transport model based on the effective mass approximation can fairly well describe the I-V characteristics of armchair graphene nanoribbon FETs at all bias conditions, including regimes dominated by direct or band-to-band tunneling, provided first-order non-parabolic corrections be included in the simulation. This is achieved by means of an energy (position) dependent effective mass. The analysis is supported by comparisons with an atomistic tight-binding model.

Our electronic structure calculations were performed using the VASP code, 1 which implements the plane wave ultrasoft pseudopotential formalism based on density functional theory (DFT) within the local density approximation (LDA). The plane-wave cutoff was chosen as 286 eV. The quantum transport calculations were performed using the Atomistix ToolKit2.0 package, 2,3 which implements DFT-based real-space, nonequilibrium Green's function formalism. The mesh cutoff of carbon atom is chosen as 100 Ry to achieve the balance between calculation efficiency and accuracy. In the transport calculations, the gating effect is treated theoretically by adding an electrostatic potential equaling to gate voltage to the channel region of the device structure, so the effect of gate geometry is not considered. In all the calculations, the edges of GNRs are saturated with H to remove C dangling bonds. Structural optimizations were first carried out on some structures until atomic forces converged to 0.01 eV/Å. However, we found that the structural optimization does not change considerably the atomic or the electronic structures of GNRS. Thus, to save computational time, we have performed large-scale transport calculations with the fixed edge CC and C-H bond lengths at the optimized values of 1.409 Å and 1.10 Å, respectively.

According to recent studies, the basic technologies presently adopted by the semiconductor industry for memory and processor fabrication should attain limits imposed by the laws of physics around the year 2010. Nanoscale sized devices like single-electron transistors appear as a highly promising option to replace conventional devices by that time. In this study, considerations about the realization of a GSI

ABSTRACT In view to the new epochal scenarios that nanotechnology disclose, nanoelectronics has the potential to introduce a paradigm shift in electronic systems design similar to that of the transition from vacuum tubes to semiconductor devices. Since many nano-scale devices and materials exhibit their most interesting properties at radio-frequencies (RF), nanoelectronics provides an enormous and yet widely undiscovered opportunity for the microwave engineering community. The aim of RF nanoelectronics is to close the gap between the nanosciences and a new generation of multifunctional devices, circuits, and systems, for a broad range of applications and operating frequencies, up to the optical region. The paper presents an overview of some of the main research fields of RF nanoelectronics, by i) introducing theoretical foundations of the novel nano-scale materials (in particular, carbon nanotubes, graphene), ii) highlighting novel concepts and applications, iii) focusing on the investigation of the electromagnetics and quantum transport phenomena in nanodevices.

The present paper explores and analyses the performance of Carbon Nano Tube Field Effect Transistor (CNTFET) technology in analog domain through its application as a basic current mirror. 32nm channel length-single walled-one tube CNTFET technology has been assessed and compared with 45nm, 32nm and 22nm NMOS technologies through HSPICE simulations of current mirror circuitry. Different methods of comparison like current error, input-output resistances, AC small signal and transient analysis have been employed which highlight the benefits of CNTFET over NMOS technology and its potential to be used for analog VLSI.

Sustaining Moore's Law requires continual transistor miniaturization. Through silicon innovations and breakthroughs, CMOS transistor scaling and Moore's Law will continue at least through early next decade. By combining silicon innovations with other novel nanotechnologies on the same Si platform, it is expected that Moore's Law will extend well into the next decade. This paper describes the most recent advances made in silicon CMOS transistor technology and discusses the challenges and opportunities presented by the recent emerging nanoelectronic devices such as carbon nanotube field-effect transistors (FET), Si-nanowire FETs and III-V FETs for high-performance, low-power logic applications.

Magneto-optic surface plasmon resonance (MOSPR) based sensors are highly attractive as next generation biosensors. However, these sensors suffer from oxidation leading to degradation of performance, reproducibility of the sensor surface because of the difficulty of removing adsorbed materials, and degradation of sensor surface during surface cleaning, and these limit their applications. In this paper, I propose MOSPR-based biosensors with 0 to 15 nm thick inert polycarbonate laminate plastic as a protective layer and theoretically demonstrate the practicability of our approach in water-medium for three different probing samples: ethanol, propanol, and pentanol. I also investigate microstructure and magnetic properties. The chemical composition and ayered information of the sensor are investigated using X-ray reflectivity and X-ray diffraction analyses and these show distinct fcc-Au (111) phases, as dominated by the higher density of conduction electrons in Au as compared to Co. The magnetic characterization measured with the in-plane magnetic field to the sensor surface for both the as-deposited and annealed multilayers showed isotropic easy axis magnetization parallel to the multilayer interface at a saturating  magnetic field of < 100 Oe. The sensor showed a maximum sensitivity of 5.5 × 10 4 % / RIU for water-ethanol media and the highest detection level of 2.5×10-8 for water-pentanol media as the protective layer is increased from 0 to 15 nm.

This thesis contains a theoretical treatment of the time-dependent quantum transport of electrons through molecular junctions. In particular, the nonequilibrium Green's function (NEGF) method is used to obtain the time-dependent current and current fluctuations in response to an arbitrarily time-dependent spatially homogeneous bias in the leads and molecular region. All subsystems in the nanojunction are assumed to be noninteracting throughout, and in addition the wide-band limit approximation (WBLA) is made in order to simplify the treatment of the lead-molecule coupling.

The theoretical work involves a complete analytical solution in the two-time plane of the Kadanoff-Baym equations for all components of the molecular region Green's function defined on the imaginary time Konstantinov-Perel' contour. This enables the derivation of expressions for time-dependent quantities such as the particle number in the molecular region and a generalized time-dependent Landauer-Büttiker (LB) formula for the current through an arbitrarily large conducting molecule. The partition-free approach is assumed for the switch-on of a bias in the leads, which enables us to study the effects on the transient transport of the initial coupling between the subsystems of the nanojunction.

The analytical expression for the full two-time Green's function is then used to study the quantum correlations between currents in the different leads. Using many-body methods, the two-time current correlation function is expressed in terms of a matrix product of Green's functions which are all known exactly. Therefore, in similar fashion to the generalized LB current, the current correlations generalize the LB theory of shot and thermal noise so that it is (i) partition-free and (ii) valid for an arbitrary time-dependent bias. To check its generality, this formula is shown to reproduce results for the zero- and finite-frequency current noise that are known from the literature on this topic.

The formulas for the current and current fluctuations are originally obtained in terms of integrals over the frequency and time planes. To render these formulas useful for calculations on large molecules they are then re-expressed with all frequency integrals replaced with special functions, which may be computed via the Padé expansion of the Fermi function. This results in a formalism which is ideally multiscale in time, i.e. which does not get more expensive with increasing number of time steps, and which can therefore be used to study the short-time transient and steady-state transport quantities with identical computational expense. Some numerical calculations of the current and noise response to the switch-on of a time-dependent bias are then performed.

The first kind of time-dependent driving considered in this thesis is periodic. Some preliminary calculations are performed on periodically-driven quantum dots, and the effect on the current of varying the driving frequency, temperature, lead-molecule coupling and driving amplitude is studied. Next, the problem of quantum pumping is considered, and sufficient conditions are found for a periodically driven system with zero time-average bias to generate a net time-averaged current through the system. The effects of finite size on the current response to static and periodic biases are investigated, again using the molecular wire as an illustrative model. Next, calculations of the quantum pump current are presented for a particular biharmonic bias model, and in particular the effect on this current of breaking the sinusoidal shape of the driving field. Finally, the discussion turns to calculations of the cross-lead current correlations in extended systems in response to static and periodic biases. By investigating molecular wires of different lengths and internal hopping parameters, a signature of the traversal time for electrons crossing the sample is found in both the transient and steady-state cross-lead current correlations.

As there are no restrictions on the nature of the time-dependent bias driving the system out of equilibrium, one can use this formalism to study the electronic response to a classically fluctuating bias in the leads. The second kind of time-dependent driving studied in this thesis is therefore non-deterministic, and exact formulas for the bias-averaged current response to a stochastic bias are derived for the first time. This problem is formally analogous to the use of the Langevin equation approach to obtain a relation between the conductance in a classical circuit and the strength of fluctuations in an external driving bias: the so-called Nyquist theorem. An exact quantum version of the Nyquist theorem is derived for a driving bias with colour noise which relates the strength of fluctuations, the correlation time of fluctuations, the temperature and conductance in a molecular junction. Due to the nonlinear relation between current and driving bias in these junctions, it is not always true that the conductance will decrease with increasing fluctuation strength. Instead, there can be particular intermediate values of the fluctuation strength at which peaks in the conductance are observed, in a stochastic resonance effect.

This paper intends to report the problems and challenges that lie ahead in transistor design methodology in nano-CMOS structure. Thus, it is desired to see the options in improving the device design on top of continuing the scaling process of transistor in the next few years to come. The main concern is to see how the transistors behave as the size of device shrinks down to below 100nm range. Besides, the demand of future generations is expected as a result of more compact of digital circuit. It is concluded that although several problems surfaces as the transistor enters the nano-CMOS era, there are excellent options to solve those problems and thus could help to reduce the transistor size and yet uncompromised the device performance.

Green nanotechnology is the development of clean technologies to minimize potential environmental and human health risks associated with the manufacture and use of nanotechnology products and to encourage replacement of existing products with new nano-products that are more environmentally friendly throughout their life cycle. The development of eco-friendly technologies in material synthesis is of considerable importance to expand their biological applications. Nowadays, a variety of green nanoparticles with well-defined chemical composition, size, and morphology have been synthesized by different methods and their applications in many cutting-edge technological areas have been explored. This review highlights the classification of nanoparticles giving special emphasis on biosynthesis of metal nanoparticle by viable organisms. It also focuses on the various applications of these synthesized nanoparticles in a wide spectrum of potential areas mechanical systems thermal, fuel technology, characterization analysis and environmental effects.

With the continuous trend of reducing feature size, and employing  continuously  smaller  components  on
integrated circuits,  new  challenges  arises  on the  way  of
silicon  CMOS circuits and devices. Emerging “nanodevices”
promise the possibility of increased integration density and
reduced power consumption. The emerging devices, partially
due to their extremely small dimensions, show large variations
in their behavior. The variation shown by these devices affects
their reliability and the performance of circuits made from
them. After aggressive scaling, the bulk Complementary Metal
Oxide Semiconductor  (CMOS)  technology  is  facing  numerous
challenges which have motivated the researchers to concentrate for  other  promising  devices.  Carbon  Nanotubes  with their superior properties, high thermal conductivities and high current drivability has emerged out as a potential alternative device to the bulk CMOS technology. Initially we have analyzed the key performance of a Carbon Nanotube Field Effect Transistor (CNFET) based inverter and NAND Gate  and compared it with the CMOS for 32nm technology  node.  Both the inverters  and NAND Gate are simulated in HSPICE platform and the results show improved performance of CNFET inverter and NAND gate in terms of power in comparison to CMOS inverter and NAND Gate.

: In this work, the differences in the behavior and properties of the emitted electron beam from tungsten (W) tips were studied before and after coating these tips with a thin layer of dielectric material followed by a thin layer of gold, to improve the emission current density, stability and emission current pattern concentration. The core of the composite cathode is made of high-purity tungsten (W). Measurements have been made with clean W emitters before and after coating these tips with two types of epoxy resins (epoxy 478 resins or epoxy UPR- 4 resins) followed by a thin layer of gold. For critical comparison, several tungsten tips with various apex-radii have been prepared using electrochemical etching techniques. The emitters have been coated by dielectric thin films of various thicknesses and the layer of Au used for coating the Epoxy layer has the same thicknesses. Their behavior has been recorded before and after the process of coating. These measurements include the current-voltage (I-V) characteristics and Fowler-Nordheim (F-N) plots. Imaging has also been done using a visible light microscope (VLM), along with a scanning electron microscope (SEM) to help in characterizing the epoxy layer thickness on the tip surface after coating. Besides, the emission patterns have been recorded from the phosphorescent screen of a field electron emission microscope (FEM). Having two types of composite systems tested under similar conditions provided several advantages. These measurements helped in producing a new type of emitters that have more suitable features with each of the two resins. Keywords: Cold field emission, Nano emitter, Dielectric coating, Au layer.

Day to day VLSI circuit is becoming more complex in regard of architecture and analysis point of view. A high computation design with less power consumption and miniaturization in the area is implicit to the current semiconductor industry. In these, a methodology for error-control parity generator and checker is fundamental of data communication and widely used in error control application. In this paper is the synthesis of the parity generator and checker, which has the unique architecture in terms of architecture complexity. Efficiency in terms of the VLSI performance attributes such as delay, power, and area. Then with the use of GDI technique a new architecture of parity generator and checker is introduced, we achieved a design with low supply voltage operation. The 3-bit parity generator and checker based on GDI technique is successful, simulated and tested at 0.5V, 1V, 1.5V, 2V supply voltage and consumed power at these voltages are 5µw, 2.5µw, 3.3µw and 0.2ns, 0.3ns, and 0.8ns worst condition of delay respectively.

Nano science and nanotechnology innovations have shown incredible
results in current era. It increases their applications in various fields such as
Engineering, Physics, Chemistry and Biology. The development in nanotechnology has
replaced conventional concepts. The remarkable performance of nanotechnology
caught the eye of electrical engineers to make reliable and efficient electrical
components. Electrical engineers using Nano-concept and make Nano-structured valueadded
products with high superior qualities. This review climaxes the concept of
nanotechnology in various electrical components such as in nanowires, insulators,
transformers and dielectric fluids with possible future prospects.

Nanometer CMOS technology offers the required integration density for advanced products such as home theatre equipment and personal communication devices. The system solutions inside these products demand highly integrated systems-on-silicon, blending highdensity digital functions with analog interface circuits. These integrated solutions have to cope with high datarates, and thus require high speed and high dynamic range circuits, without compromising power consumption. Novel choices on circuit and system level are required to handle the increased number of devices subject to high variability, running at higher intrinsic speeds with a constraint power supply. 10 5

Sodium cobaltite (NaCo2O4) nano crystalline thermoelectric materials were obtained using electrospinning technique. Electrospunnanofibers was calcined at 800 o C and sintered at 850 o C in open air atmopshere. We have investigated the microstructure and thermoelectric properties of the sintered and unsintered samples for analysis sintering effect. The calcined sodium cobaltite crystal structures were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Products molded by cold pressing method, and one of the pellets were sintered at 850 o C by conventional sintering, the other not subjected to the sintering process. Thermoelectric properties of the both materials were measured by PPMS system in the temperature range 10-300 K. The dimensionless figure of merit (ZT) values at 300 K is 4 × 10 −5 and 9 × 10 −5 for sintered and unsintered samples respectively. Although conventional sintered technique increase thermoelectric power and thermal conductivity approximately % 50 but it 4-fold decreased electrical conductivity.

Abstract-Digital VLSI design courses are a standard component in most electrical and computer engineering curricula. Electronic Design Automation (EDA) or Computer Aided Design (CAD) tools and frameworks are an integral and indispensable part of such courses. In this paper we present our findings during the preparation and setup of such a course, centered around nanoscale CMOS, standard cell based design. Practical issues, such as the choice of licensing model, hardware and software platform selection, point tool identification and deployment as well as the availability of readily useable standard cell libraries are discussed. In addition, a design flow that incorporates the tools in a comprehensive framework is presented. A sample syllabus and a suggested teaching methodology are also given.

In the next generation nanoelectronics and SiC based electronic packaging, current density and temperature gradient will be larger in orders of magnitude. Electromigration and thermomigration are considered to be major road blocks leading to realisation of nanoelectronics and SiC based high temperature power electronics. In this paper, damage mechanics of 95.5Sn4Ag0.5Cu (SAC405) lead-free solder joints under high temperature gradients have been studied. This paper presents observations on samples which were subjected to 1000°C/cm thermal gradient for two hours, 286 hours, 712 hours and 1156 hours. It was observed that samples subjected to thermal gradient did not develop a Cu 3 Sn intermetallic compound (IMC) layer at the hot side due to Cu migration to the cold side thus causing insufficient Cu mass concentration to form Cu 3 Sn. On the other hand, in samples subjected to isothermal annealing exhibited IMC growth. In samples subjected to thermomigration, near the cold side the Cu concentration is significantly higher, compared to hot side. Extensive surface hardness testing showed increase in hardness from the hot to cold sides, which indicates vacancy migration and Sn grain coarsening are in the opposing direction.

A silicon multi-gate nanowire simulation is presented in this paper. The simulation studies are conducted based on electrical parameters such as Current-Voltage (I-V) characteristics, Mid-channel conduction band profile and mid-channel charge density profile using Nanohub Multi-gate Nanowire FET simulator. These characterization studies are performed to investigate the performance of silicon nanowire based on different gate arrangements in the device. We have simulated the silicon nanowire field effect transistors (FETs) with multiple gates such as double, tri, pi, omega and Gate-all-around gate structures using Nanohub simulation software. Effects of varying different parameters (such as Vgs and channel distance) in different devices and their effects are also presented.

The goal of this paper is to review in brief the basic physics of nanoelectronic device single-electron transistor [SET] as well as prospective applications and problems in their applications. SET functioning based on the controllable transfer of single electrons between small conducting "islands". The device properties dominated by the quantum mechanical properties of matter and provide new characteristics coulomb oscillation, coulomb blockade that is helpful in a number of applications. SET is able to shear domain with silicon transistor in near future and enhance the device density. Recent research in SET gives new ideas which are going to revolutionize the random access memory and digital data storage technologies.

A novel expandable five-input majority gate for quantum-dot cellular automata and a new full-adder cell are presented. Quantum-dot cellular automata (QCA) is an emerging technology and a possible alternative for semiconductor transistor based technologies. A novel QCA majority-logic gate is proposed. This component is suitable for designing QCA circuits. The gate is simple in structure and powerful in terms of implementing digital functions. By applying these kinds of gates, the hardware requirement for a QCA design can be reduced and circuits can be simpler in level, gate counts and clock phases. In order to verify the functionality of the proposed device, some physical proofs are provided. The proper functionality of the FA is checked by means of computer simulations using QCADesigner tool. Both simulation results and physical relations confirm our claims and its usefulness in designing every digital circuit.

This paper presents the feasibility challenges of designing dc-dc buck and boost converter in nano-scale. With the gradual development of VLSI design platforms, new issues have been introduced and presented to the power electronics circuit experts and VLSI engineers. Today's VLSI industry has reached the technology well within the nano-meter range. The consequence of implementing the basic power electronics converter topology such as buck and boost converter into this technology is discussed in this paper. It also covers the optimization issues between conduction modes, switching frequencies, efficiency and chip area. Fabrication issues are discussed, with the limitations of use of elements such as inductor, capacitors and resistors. Tradeoffs between chip area and performance are highlighted. Design challenge for optimum switching frequency, off the chip capacitor, and strategies to minimize switching and conduction losses are also discussed

The work presented in this paper focuses on the
effects of high leakage current in field effect transistors and the
possible ways to play down with the leakage currents. This paper
combines density functional theory and non equilibrium Green’s
function formalism to perform atomic scale calculation of tunnel
currents through SiO2, HfO2, Ta2O5, ZrO2 and Dy2O3 dielectrics
in MOSFETs. The tunnel currents for different bias voltages
applied to Si/Insulator/Si systems have been obtained along with
tunnel conductance v/s bias voltage plots for each system and the plots have been analyzed with reference to the presently used
bulk Si/SiO2/Si systems that have SiO2 as the gate dielectric
material. The results justify the use of high dielectric constant
materials as gate dielectric in FET devices so as to enable further
downscaling of MOSFETs with reduced gate leakage currents
thereby enabling ultra large scale integration.

Cellular RF coverage design and optimization are critical to sustain network performance, subscriber growth and revenue generation. Day by day subscriber for cellular phone is increasing rapidly, as a result the service needed to be upgraded otherwise the company will lose their profit and subscriber will roam from one company to another. Therefore, the company has to make extensive plan for cell, cluster and delicate reckon on Traffic Engineering. This paper presents a method of cellular RF design and optimization techniques using Cloudrf in conjunction with Google TM earth. Experimental results are presented to illustrate the concept and a tradeoff between loss in profit and customer satisfaction has been derived.

The demand projected in the world's population growth emphasis the advent of new technologies in the areas of energy consumption, environmental changes, and biomedical applications which play a major part in human life. One promising technology that fulfills the above demand is nanosciences and nanotechnology which play a crucial role at the nanoscale in energy, environment, and Lifesciences. Nanosciences plays a vital role in environmental monitoring, energy conversion, distribution, and storage as well as useful in gene therapy, drug delivery systems, and tissue engineering. The use of nanoscale materials and nanoparticles in these arenas eases the process flow and cost-effective with ecofriendly over the current conventional methods or applications. The various applications of nanosciences and Nanobiotechnology are versatile and find their applications in the fields of human diagnostics, bioremediation, waste management, medical devices, tissue engineering, green technology, environmental monitoring, emission control, electricity production and transmission loss, solar power, etc.

Abstract
The motivation for this project came from the countries where economy is based on agriculture and the climatic conditions lead to lack of rains & scarcity of water. The farmers working in the farm lands are solely dependent on the rains and bore wells for irrigation of the land. Even if the farm land has a water-pump, manual intervention by farmers is required to turn the pump on/off whenever needed.
The aim of our project is to minimize this manual intervention by the farmer. Automated Irrigation system will serve the following purposes:
1) As there is no un-planned usage of water, a lot of water is saved from being wasted.
2) The irrigation is the only when there is not enough moisture in the soil and the sensors decides when the pump should be turned on/off, saves a lot time for the farmers. This also gives much needed rest to the farmers, as they don’t have to go and turn the pump on/off manually.

Les promesses des technosciences contemporaines s’appuient sur les success stories de celles qui façonnent actuellement l’économie et la société. La Loi de Moore, fonction exponentielle qui décrit et prédit la cadence de miniaturisation et de réduction des coûts des composants électroniques depuis un demi-siècle, constitue un de ces récits. Ce chapitre interroge la Loi de Moore comme matrice historique du régime actuel de l’économie des promesses technoscientifiques. Devenue métaphore du progrès technique en général, la Loi de Moore délimite le périmètre de ce qui, des technosciences, peut être interrogé et discuté. Parce qu’elle trace un cadre temporel pour l’innovation, sa construction même est hors-cadre, et relève du non négociable.En donnant à voir la fabrique de ce récit, ce chapitre entend construire et instruire une position critique générale sur l’économie des promesses technoscientifiques actuelles. Cette critique porte moins sur la faisabilité de ces promesses (sur leur caractère spéculatif, non crédible, non tenable) que sur leur désirabilité. La Loi de Moore montre en effet que ces promesses peuvent devenir crédibles, réalisables, tenables – mais à quel prix ?

ISO 14644-Part 13 ‘Cleaning of surfaces to achieve defined levels of cleanliness in terms of particle and chemical classifications’ addresses the subject of cleaning cleanroom surfaces to remove particles (surface, in this context, refers to any solid object, work surface or item of equipment). Cleaning is an essential element of contamination control, and particles can cause significant damage to delicate materials and electronic components.

ETHICS AND EPISTEMOLOGY OF NANOTECHNOLOGY

I – Critically Mapping Current Approaches

From an early stage, nanoscience and nanotechnology (NST) have been associated with a political will to integrate upstream the question of their "ethical and societal implications". In this context, the implication of the social and human sciences (SHS) has given way to a great variety of approaches to NST ethics. After a decade of SHS involvement, it is time for an appraisal. This article seeks to critically map the different approaches of SHS involvement in NST with regard to their problematization of ethical issues and to identify their shortcomings and limitations. Especially, it is argued that concrete technoscientific NST developments and the concerns with the values that they generate should be better articulated.

II – For an object-centred approach

The ethics of nanoscience and nanotechnology (NST) calls to question the division between the neutrality objects and the morality of uses. NST lead us therefore to a new kind of "Copernican revolution", taking us from a situation where the subject is the only moral being to a situation where objects fully enter in the field of moral philosophy. This article shows how the epistemological analysis of the mode of existence of nano-objects can renew the ethical issues on several singular fieldworks. The demonstration will be based on four case studies of nano-objects, conceptualized as "relational objects" : artificial molecular machines, drug nanocarriers, bio and eco-toxicology of nanoparticles, and biomarkers for personalized medicine.

ÉTHIQUE ET ÉPISTÉMOLOGIE DES NANOTECHNOLOGIES

I – Cartographie critique des approches existantes

Les nanosciences et nanotechnologies (NST) ont été placées très tôt sous le signe d’une volonté politique d’intégrer, en amont, la question de leurs « enjeux éthiques et sociétaux ». Dans ce contexte, les démarches « d’accompagnement » des technosciences par les sciences humaines et sociales (SHS) se sont multipliées, et diverses approches de l’éthique des NST ont été proposées. Après une décennie d’implication des SHS, un bilan s’impose. Cet article propose une cartographie raisonnée des différentes démarches d’accompagnement des NST par les SHS quant à leur problématisation du questionnement éthique, et en indique les insuffisances et les limites. Il soutient notamment que les développements technoscientifiques concrets des NST et les questions de valeurs qu’ils suscitent doivent être mieux articulés.

II – Pour une approche centrée sur les objets

l'éthique des nanosciences et nanotechnologies (NST) appelle à remettre en question le partage entre la neutralité des objets et la moralité des usages. Les NST nous poussent par conséquent à une sorte de nouvelle « révolution copernicienne », nous faisant passer d'une situation où le sujet est le seul être moral à une situation où les objets entrent de plain-pied dans le champ de la philosophie morale. Le présent article montre comment l'analyse épistémologique du mode d'existence des nano-objets permet de renouveler le questionnement éthique sur des terrains à chaque fois singuliers. La démonstration se fera sur la base de quatre cas concrets de nano-objets, conceptualisés comme des « objets relationnels » : les machines moléculaires artificielles, les nanovecteurs de médicament, la bio et l'éco-toxicologie des nanoparticules, et les biomarqueurs pour la médecine personnalisée.

Being the pioneer material in the history of electronics, germanium has regained a lot of interest as a semiconductor material for opto-electronic and electronic applications. We present how developments in the growth of germanium single crystals and the processing of crystals into wafers have enabled the optimal exploitation of the properties of germanium for applications in infrared optics and gamma-radiation detection, and the breakthrough of this material as a substrate for opto-electronic applications like photovoltaics. Germanium might even be on the verge of a come-back in electronics: recent developments show that germanium is a promising material for next generation nanoscale electronic devices and integration of optical functions on logic circuits. In order to achieve compatibility with the state-of-the-art Si environment, we have developed our dislocation-free crystal growth and wafer processing towards the production of 300 mm Ge wafers. r

(Nano molecular memory) By using the structure of nanomolecular memory, the size of memory bits can be
substantially reduced, thereby increasing the density and efficiency of magnetic memory and lowering its cost and cost. Nano-lithographic methods are now being used to
provide some very powerful memories. Nanoelectronics Science and Technology offer
different nano-molecular memory capabilities. Photofraction materials, for example,
represent only one type of optical memory. In fact, with the use of nanotechnology, the
storage capacity of information can be increased by a thousand times or more. Data
storage is a very important and necessary topic that can be done in various ways
through nanomolecular memory. One of the new data storage tools is the use of nickel
quantum dots in nanometer sizes that are expected to Use terabytes of data storage.
Due to nano molecular memory, there is a high potential for activity in this field

In the building of nanostructures
(nanoplasmonics) , the volume created by the
electromagnetic field is localized, compressed and
improved. Slight changes in the dielectric around
the nanoparticle affect the intensification of surface
plasmons, so that these changes are reflected in the
amount of beam scattered, the absorbed beam, or
the change in wavelength.
Nanostructure is defined as any structure with one
or more dimensions and is measured in the
nanometer scale range. Nanostructures are
materials or structures that have at least one
dimension between 1 and 100 nanometers . The
importance of nanoscale in changing the properties
and characteristics of materials in these
dimensions. Properties such as electrical
conductivity, electromagnetic properties and so on.
The beginning of changing the properties of a
material by shrinking it depends more than anything
on the type of material and the desired property. For
example, as the dimensions of a material shrink ,
some of the nanomolecular electromagnetic
properties of materials, such as the conductivity of
nanoparticles in materials, generally improve. This
increase in strength does not occur only in the
range of a few nanometers, and the strength of
materials of several tens or even hundreds of
nanometers may be very high. Be larger than
large-scale bulk material. These changes can be
measured using optical characteristics