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GaN solid state electron emitter

GaN solid state electron emitter

IVMC '95. Eighth International Vacuum Microelectronics Conference. Technical Digest (Cat. No.TH8012)
Abstract
We report the first experimental demonstration of a low voltage, room temperature electron emitter that is based on the GaN UV opto-electronic cathode. It consists of an ultra-violet light emitting diode (UV-LED) in direct contact with a photoemitter. The photons generated by the LED have energies - 3.4 eV (the bandgap of GaN). The photons cause photoemission of electrons from

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