1
Towards Analog Memristive Controllers
Index Terms—BMI Optimization, Control of Miniaturized Devices, Gain Scheduling, Memristor, Robust and Adaptive Control
I. I NTRODUCTION
EMRISTOR [1], considered as the fourth basic circuit
element, remained dormant for four decades until the
accidental discovery of memristance in nanoscopic crossbar arrays by a group of HP researchers [2]. Memristor, an acronym
for memory-resistor, has the capability of memorizing its
history even after it is powered off. This property makes it
a desirable candidate for designing high density non-volatile
memory [3]. However, optimal design of such hardware architectures will require accurate knowledge of the nonlinear
memristor dynamics. Hence, considerable effort has been
channeled to mathematically model memristor dynamics (see
[2], [4], [5], [6]). The memorizing ability of memristor has lead
researchers to think about its possible use in neuromorphic
engineering. Memristors can be used to make dense neural
synapses [7] which may find applications in neural networks
[8], character recognition [9], emulating evolutionary learning
(like that of Amoeba [10]). Other interesting application of
memristor may include its use in generating higher frequency
harmonics which can be used in nonlinear optics [11] and its
use in making programmable analog circuits [12], [13].
Memristor is slowly attracting the attention of the control
community. Two broad areas have received attention: 1) Control of Memristive Systems. This include works reported in
[14], [15] give detailed insight into modelling and control
of memristive systems in Port-Hamiltonian framework while
State-of-the-Art work may include [16] which studies global
stability of Memristive Neural Networks. 2) Control using
Memristive Systems. The very first work in this genre was
reported in [17] where the author derived the describing function of a memristor which can be used to study the existence
M
The authors are with the Department of Electrical Engineering, Indian
Institute of Technology, Madras, India. e-mail: {ee13s005, ramkrishna,
ee13s007}@ee.iitm.ac.in
Voltage
V
Current
I
dV / dI = R
dt
=
dΦ / dI = L
A
/
V
t=
I
dΦ
w
V
Charge
Q
D
?
dΦ / dQ = M
+
Undoped
Doped
/d
dQ / dV = C
Abstract—Memristors, initially introduced in the 1970s, have
received increased attention upon successful synthesis in 2008.
Considerable work has been done on its modeling and applications in specific areas, however, very little is known on the
potential of memristors for control applications. Being nanoscopic
variable resistors, one can consider its use in making variable
gain amplifiers which in turn can implement gain scheduled
control algorithms. The main contribution of this paper is
the development of a generic memristive analog gain control
framework and theoretic foundation of a gain scheduled robustadaptive control strategy which can be implemented using this
framework. Analog memristive controllers may find applications
in control of large array of miniaturized devices where robust
and adaptive control is needed due to parameter uncertainty and
ageing issues.
dQ
arXiv:1405.7677v3 [math.OC] 31 Jul 2014
Gourav Saha, Ramkrishna Pasumarthy, and Prathamesh Khatavkar
_
a)
Flux
Φ
+
Ron Dw
_
Rof f 1 − Dw
b)
Figure 1. a) Memristor as a missing link of Electromagnetic Theory. Adapted
from [4]. b) Memristor as a series resistor formed by doped and undoped
regions of T iO2 . Adapted from [2].
of undesirable limit cycles (i.e. sustained oscillations) in a
closed loop system consisting of memristive controller and
linear plant. Another line of work may include [18], [19] which
uses memristor as a passive element to inject variable damping
thus ensuring better transient response. In this paper we lay the
groundwork to use memristor as an analog gain control (AGC)
element for robust-adaptive control of miniaturized systems.
Why "Analog Memristive Controller"?: Several applications needs controlling an array of miniaturized devices.
Such devices demands Robust-Adaptive Control due to parameter uncertainty (caused by design errors) and time varying
nature (caused by ageing effect). Robust-Adaptive Control
algorithms found in literature are so complex that they require
micrcontroller for implementation. This poses scalability and
integration issues [20] (page 190) because microcontroller in
itself is a complicated device. The motive of this work is two
folded: 1) Invoke a thought provoking question: “Can modern
control laws (like Robust-Adaptive control) be implemented
using analog circuits1 ?”. 2) Suggest memristor as an AGC
element2 for implementing Robust-Adaptive Control.
The paper is organized as follows. We begin our study by
gaining basic understanding of memristor in Section II. A
generic gain control architecture using memristor is proposed
in Section III. Section IV discusses a robust-adaptive control
strategy which can be implemented in an analog framework.
Section V deals with designing an analog controller for a
miniaturized setup by using results from Section III and IV.
1 A microcontroller (or a few microcontrollers) may be used to control
an array of miniaturized devices by using Time Multiplexing. In time
multiplexing a microcontroller controls each element of the array in a cyclic
fashion. In such a scenario a microcontroller will face a huge computational
load dependent on the size of the arrray. Upcoming ideas like “event-based
control” promises to reduce the computational load by allowing aperodic
sampling. The motive of this work is not to challenge an existing idea but to
propose an alternative one.
2 CMOS based hybrid circuits like that proposed in [21] can also act like
variable gain control element. However memristors are much smaller (found
below 10 nm) than such hybrid circuits and hence ensures better scalability.
Gain-Span of memristor is also more than CMOS based hybrid circuits.
2
W indow F unction f
D
!w"
1
0.95
0.8
0.6
0.4
Effective Normalized Channel Length
=(0.91−0.08)
=0.83
0.2
0
0
wl
D
0.08 0.2
0.4
0.6
N ormalized Channel Length
0.8 0.91
w
D
1
wh
D
Figure 2. Plot of jogelkar window
function with p = 8 for HP memristor. For
w
w
the safe zone of operation is D
∈ [0.08 , 0.91].
a tolerance of 5% in f D
II. M EMRISTOR P RELIMINARIES
Chua [1] postulated the existence of memristor as a missing
link in the formulation of electromagnetism. Fig. 1a) gives
an intuitive explanation of the same. As evident from Fig.
1a), such an element will link charge Q and flux Φ, i.e.
Φ = f (Q). Differentiating this relation using chain rule and
applying Lenz’s Law yields
V = M (Q) I
(1)
suggesting that the element will act like a charge controlled
df
as the variable resistance.
variable resistor with M (Q) = dQ
This device has non-volatile memory ([1], [4]) and are hence
called memristors. Memristive systems [22] are generalization
of memristor with state space representation,
Ẇ = F (W , I) ; V = R (W , I) I
(2)
where, W are the internal state variables, I is the input
current, V is the output voltage, R (W , I) is the memristance.
Memristor reported by HP Labs in [2] is essentially a memristive system with the following state space representation,
ẇ = µ RDon f
w
D
w
I; V = Ron D
+ Rof f 1 −
w
D
I
(3)
It consists of two layers: a undoped region of oxygen-rich
T iO2 and doped region of oxygen-deficient T iO2−x . Doped
region has channel length w and low resistance while undoped
region has channel length D − w and high resistance. These
regions form a series resistance as shown in Fig. 1b. Ron and
Rof f are the effective resistance when w = D and w = 0
respectively with Rof f ≫ Ron . µ is the ion mobility. When
external bias is applied, the boundary between the two regions
drift. This drift is slower near the boundaries, i.e. ẇ → 0
as w → 0 or w → D. This nature is captured in [4], [5]
w
. A plot of Joglekar window
using window function f D
p
2w
w
function f D = 1 − D − 1 is shown in Fig. 2. A
close investigation of various proposed models [2], [4], [5],
w
[6] reveals two important facts: 1) As shown in Fig. 2, f D
is approximately 1, except near the boundaries. 2) Boundary
dynamics of memristor is highly non-linear and still a matter
of debate. Hence
the region w ∈ [wl , wh ], 0 < wl < wh < D,
w
≈ 1 is the safe zone in which memristor
where f D
dynamics can be approximated as
S
S
Q̇M = I ; V = Rof
(4)
f − α QM I
S
(RS f −Ron
) S
where, αS = ofQ
, Rof f = Rof f − (Rof f − Ron ) wDl ,
S
M
S
Ron
= Rof f − (Rof f − Ron ) wDh , DS = wh − wl , QSM =
DS D
µRon . Superscript “S” means “safe”. In equation (4) we define
S
QM such that QM = 0 when w = wl . Then QM = Q
M when
w = wh . Hence equation (4) is valid when QM ∈ 0 , QSM .
From now on, the following conventions will be used:
1) Memristor would mean a HP memristor operating in safe
zone. Memristor dynamics is governed by equation (4).
2) The schematic symbol of the memristor shown in Fig.
1a will be used. Conventionally, resistance of memristor
decreases as the current enters from the port marked "+".
3) HP memristor parameters: Ron = 100Ω, Rof f = 16kΩ,
2
D = 10nm, µ = 10−14 m
sV . We model the memristor
using Joglekar Window Function with p = 8. The safe
zone is marked by wl =
(see
0.08D and wh = 0.91D
w
S
Fig. 2) in which f D
≥ 0.95. This gives: Rof
f =
Ω
S
15kΩ, Ron
= 1.5kΩ, QSM = 83µC, αS = 1.6 × 108 C
.
These parameters will used for design purposes.
III. A NALOG G AIN C ONTROL F RAMEWORK
In this section we design a AGC circuit whose input-output
relation is governed by the following equation,
K̇ = αk VC (t) ; Vu (t) = KVe (t)
(5)
We assume that K > 0. This is basically a variable gain
proportional controller with output voltage Vu , error voltage
Ve and variable gain K. K is controlled by control voltage
VC . αk determines the sensitivity of VC on K. An analog
circuit following equation (5) is generic in the sense that
it can be used to implement any gain scheduled control
algorithm. We assume VC and Ve are band limited, i.e. - the
M
maximum frequency component of VC and Ve are ωC
and
M
M
M
ωe respectively. Knowledge of ωC and ωe is assumed.
The proposed circuit is shown in Fig. 3. We assume the
availability of positive and negative power supply3 VDD and
−VDD . All op-amps are powered by VDD and −VDD .
Claim 1: The proposed circuit shown in Fig. 3. is an
approximate analog realization of equation (5) if:
1) Electrical components in Fig. 3. are ideal. Also for
MOSFET’s, threshold
0.
Mvoltage
Vth ≈
M
+ ωeM , 2ωC
2) ωm = 1000 max ωC
1
3) Rf Cf = 100
ωm ; Re Ce = 2(ω M +ωeM )
C
We understand the working of the proposed circuit by
studying its four distinct blocks and in the process prove the
above claim. The output response of each block for a given
input, Ve and VC , is shown in Fig. 4. It should be noted that
the tuning rules proposed in the claim is only one such set of
values which will make the circuit follow equation (5).
Remark 1: Substrate of all NMOS and PMOS are connected
to −VDD and VDD respectively. In ON state4 , voltages between −VDD to (VDD − Vth ) will pass through5 NMOS and
3V
DD and −VDD are the highest and the lowest potential available in the
circuit. From control standpoint, it imposes bounds on control input Vu .
4 With a slight abuse of terminology, a NMOS and a PMOS is said to be
in ON state when its gate voltage is VDD and −VDD respectively.
5 A voltage is said to pass through a MOSFET if the exact voltage applied
at its source(drain) terminal appears at its drain(source) terminal.
3
VL1
Rs
Integrator
_
VIG
T1
Cf Rf
Vm
+
+
RI
−
M
Rf
D1
+
−
RC +
D2
TC1
Ce Re
_
+
High Pass Filter
Envelope Detector
VED
Vu
−
Vf
sin (ωm t)
Memristor
Gain Block
−
CH
VC
VCm
+
−
D4
TC4
O2
O1
Cs
+
D3
T4
T2
+
T3
−
TC3
TC2
VL2
Ve
B. High Pass Filter (HPF)
Charge Saturator Block
Voltage
Follower
Figure 3. Memristive AGC Circuit. Ve and VC are the inputs. Vu , VL1 and
VL2 are the outputs. VL1 and VL2 are zone indicating voltages.
voltages between − (VDD − Vth ) to VDD will pass through
PMOS. If Vth ≈ 0, any voltage between −VDD to VDD will
pass through NMOS and PMOS when they are in ON state.
A. Memristor Gain Block
The key idea of this block has been adapted from [23]. VCm
and Ve are inputs to this block while Vm is the output. For now
we assume VCm = VC (details discussed in III-D). Current Im
through memristor is
Im (t) =
Ve (t) sin (ωm t) VC (t)
+
RI
R
{z
} | {zC }
|
Inoise
Icntrl
From equation (4), resistance of the memristor is given by
S
S
M (QM ) = Rof
f − α QM . Differentiating this relation we
S
get, Ṁ = −α Im (t). Hence voltage Vm is given by
Ṁ = −αS Im (t) ; Vm (t) = −Im (t) M
(6)
M
M
Note that ωm = 1000 max ωC + ωeM , 2ωC
> ωeM .
In such a case the minimum component frequency of Inoise =
Ve (t) sin(ωm t)
is ωm − ωeM . Now
RI
M
M
ωm − ωeM = 1000 max ωC
+ ωeM , 2ωC
− ωeM
M
≥ 1000 ωC
+ ωeM − ωeM
=
M
M
1000ωC
+ 999ωeM ≫ ωC
This implies that the lowest component frequency of Inoise
is much greater than the highest component frequency of
Icntrl . Also note that Ṁ = −αS Im (t) in an integrator with
input Im (t) and output M (t). As integrator is a low pass
filter, the effect of high frequency component Inoise on M
is negligible compared to Icntrl . Hence equation (6) can be
modified as
αS
VC (t) ; Vm (t) = Vm1 + Vm2 where, (7)
Ṁ ≈ −
RC
Vm1
Ve (t)
− MR
I
Vm2
VC (t)
.
− MR
C
Vm1 is
M
.
=R
I
sin (ωm t) and
Note
=
=
the modulated form of the desired output with gain K
Remark 2: M (t) is the variable gain. According to equation
(5), Ve should not effect M (t). Without modulating Ve , the
effect of Ve (t) on M (t) would not have been negligible.
The role of HPF is to offer negligible attenuation to Vm1
and high attenuation to Vm2 thereby ensuring that the Envelope
Detector can recover the desired output.
Note that M (t) is basically the integral of VC (t). Since
integration is a linear operation it does not do frequency translation. Hence the component frequencies of M (t) and VC (t)
are same. Let ω1m and ω2M denote the minimum component
frequency of Vm1 and maximum component frequency of Vm2
respectively. Now
ω1m
=
=
=
ω2M
ωm − Maximum Frequency Component of M Ve
ωm − Maximum Frequency Component of VC Ve
M
ωm − ωC
+ ωeM
(8)
=
Maximum Frequency Component of M VC
=
Maximum Frequency Component of (VC )
=
M
2ωC
2
(9)
The
attenuation offered
by the HPF is given by
−2
dB. We want to study the atten−10 log 1 + (ωRf Cf )
uation characteristics at two frequencies:
1) At ω = ω1m : At this frequency
ω1m Rf Cf
M
M
100 ωm − ωC
+ ωeM
ωC
+ ωeM
= 100 1 −
=
ωm
ωm
1
≈ 100
(10)
≥ 100 1 −
1000
Inequality
because ωm
=
M(10) M is possibe
M
m
implying ωMω+ω
1000 max ωC
+ ωe , 2ωC
M ≥ 1000.
e
C
For ω1m Rf Cf ≥ 100 attenuation is approximately 0 dB.
As the HPF offers almost no attenuation to the minimum
component frequency of Vm1 , it will offer no attenuation to
the higher component frequency of Vm1 as well. Hence Vm1
suffers negligible attenuation.
2) At ω = ω2M : At this frequency
M
100
2ωC
≤
= 0.1
(11)
ωm
1000
Inequality
because ωm
=
M(11) M is possibe
ωm
M
implying 2ω
≥
1000.
1000 max ωC
+ ωe , 2ωC
M
C
For ω2M Rf Cf ≤ 0.1 attenuation is more than −20 dB. As
the HPF offers high attenuation to the maximum component
frequency of Vm2 , it will offer higher attenuation to the
lower component frequency of Vm2 . Hence Vm2 gets highly
attenuated.
As Vm1 undergoes almost no attenuation (≈ 0dB), the output
of HPF is Vf = −Vm1 . The minus sign before Vm1 is justified
as the HPF is in inverting mode.
ω2M Rf Cf = 100
C. Envelope Detector
Ve (t)
sin (ωm t). Similar
The input to this block is Vf = M R
I
to amplitude modulation (AM), here sin (ωm t) is the carrier
Ve (t)
and M R
is the signal to be recovered. We use a polarity
I
Ve (t)
sensitive envelope detector as M R
can be both positive or
I
negative. The key idea used here is that the polarity of Ve and
C
e
modulated, i.e. MRVI e , may
contain frequencies anywhere in
M
M
the range 0, ωC + ωe . For a given Re Ce a signal with a
lower frequency will suffer higher ripple. Hence to constrain
the ripple for any frequency in the specified range one must
constrain the ripple for 0 frequency (DC voltage). For DC
2π×100
. With the
voltage ripple factor is approximately √3ω
m R e Ce
choice of Re Ce made in Claim 1 and 100 as multipying
factor, ripple factor is as large as 7.2%. Therefore, we choose
multiplying factor of 1000 which gives a ripple factor of
Ve (t)
0.72%. The output of the envelope detector is M R
and
I
the final output of the circuit is
Ṁ ≈ −
where, M =
αS
VC (t) ; Vu (t) = MVe
RI R C
(12)
M
RI .
Comparing equations (5) and
(12) we see
S
S
Rof
Ron
f
α
that αk = − RI RC and K = M where M ∈ RI , RI .
S
RI is tuned to get the desired range of gain while RC is a
free parameter which can be tuned according to the needs.
D. Charge Saturator Block
This block limits the memristor to work in its safe zone
hence ensuring validity of equation (4). In safe zone the
Vm (in V )
0.5
0.25
0
−0.25
−0.5
5
2.5
0
−2.5
0
200
400
600
800
a) t (in ms)
−5
1000
5
0
−5
−10
0
200
400
600
800
200
400
600
800
1000
0
200
400
600
800
1000
Vu (in V )
0
−1
200
400
600
800
c) t (in ms)
0
200
400
600
800
1000
0
−1
e) t (in ms)
2
1
0
d) t (in ms)
1
−2
1000
b) t (in ms)
2
−2
0
2
Vf (in V )
VC (in V )
10
True Output
(in V)
M
> 0. Hence we detect the positive
Vu is same since K = R
I
peaks of Vf when Ve is positive by keeping T1 ON and TC1
OF F . When Ve is negative, negative peaks of Vf are detected
by keeping TC1 ON and T1 OF F . Remaining working of
the envelope detector is similar to a conventional Diode-based
Envelope Detector and can be found in [24]. Effective envelope
detection using diode based envelope detector requires:
M
1) ωm ≫ ωC
+ ωeM , i.e. the frequency of the carrier
should be much greater than the maximum component
frequency of the signal. Here sin (ωm t) is the carrier
whose frequency is ωm while MRVI e is the signal whose
M
maximum component frequency is ωC
+ ωeM (refer
equation (8)).
2) ω1m ≪ Re Ce , i.e. the time constant of the envelope
detector is much larger than the time period of the
modulating signal. This ensures that the capacitor Ce
(refer Fig. 3) discharges slowly between peaks thereby
reducing the ripples.
1
3) Re Ce < ωM +ω
M , i.e. the time constant of the envelope
e
C
detector should be less than the time period corresponding to the maximum component frequency of the signal
getting modulated. This is necessary so that the output of
the envelope detector can effectively track the envelope
of the modulated signal.
The proposed tuning rule in Claim 1 satisfies these conditions. In general, for amplitude modulation (AM) the choice of
modulating frequency is 100 times the maximum component
frequency of the signal getting modulated. Unlike AM, our
multiplying factor is 1000 instead of 100. The reason for
choosing this should be clearly understood. In a conventional
diode based peak detector the ripple in output voltage can
be decreased either by increasing the modulating frequency
ωm or by increasing the time constant Re Ce . But Re Ce is
1
upper bounded by ωM +ω
M . In our case the signal to be
Ve (in V )
4
1000
1
0
−1
−2
f) t (in ms)
Figure 4. Output of various stages of the circuit shown in Fig. 3, i.e. Vm ,
Vf and Vu , corresponding to inputs: Ve and VC . Parameters of simulations
are: HP Memristor in safe zone, ωm = 628 × 103 rads−1 , RC = 100
kΩ, RI = 1 kΩ, Rf Cf = 0.159 ms, Re Ce = 0.796 ms, VDD = 5 V ,
Rs Cs = 0.826 s. Vu is obtained by simulating the circuit show in Fig. 3.
The true output is obtained by numerically solving equation (5). In both
cases we use Ve and VC shown in Fig. 4a and Fig. 4b respectively as inputs.
following equations are valid6 ,
dVIG
dVIG
RC
V m dQM
Vm
=−
(13)
=− C ;
= C ⇒
dt
Rs C s
dt
RC
dQM
Rs C s
that in the safe zone w ∈ [wl , wh ] and QM ∈
Recall
0 , QSM . We assume that integrator voltage VIG = 0 when
QM = 0 (or w = wl ). Integrating equation (13) under this
assumption yields
RC
QM
(14)
VIG = −
Rs C s
In equation (14),hif QM = QSM
i (or w = wh ), VIG = −
R QS
− RCs CM
s
RC QS
M
R s Cs
.
Hence, VIG ∈
, 0 when memristor is in its safe
zone. In Fig. 3 comparator O1 and O2 are used to compare
VIG to know if the memristor is in safe zone. Note that: 1) Reference voltage of comparator O1 and O2 is GN D and voltage
R QS
VH (across capacitor CH ) respectively. VH is set to − RCs CM
s
by Synchronization Block (refer Section III-E). 2) In Fig. 3 any
MOSFET transistor couple, Ti and TCi , are in complementary
state, i.e. if Ti is ON , TCi will be OF F and vice-versa. 3)
Comparator output VL1 and VL2 gives knowledge about the
state of the memristor. Also VL1 , VL2 ∈ {−VDD , VDD }. Now
depending on VL1 and VL2 , three different cases may arise:
Case 1 (VH < VIG < 0 ⇒ VL1 = VDD , VL2 = VDD )
This implies that the memristor is in its safe zone, i.e. 0 <
QM < QSM . QM can either increase or decrease. Hence both
T2 and T3 are ON allowing both positive and negative voltage
to pass through, i.e. VCm = VC .
Case 2 (VIG < VH ⇒ VL1 = VDD , VL2 = −VDD )
This happens when QM ≥ QSM . Since QM can only decrease,
T2 is kept OF F but T3 is ON . Two cases are possible: if
6 Actually, dQM
dt
Vm
V sin((ω
t))
= RC + e R m . But as proved in III-A, the effect
C
I
of high frequency term, Ve sin (ωm t) on QM is negligible.
5
A
C
M
_
TC6 T6
RC VL3_
D
VL3
15
−1
10
V
1
5
V
−2
_ O3
S
S3
Ron
VDD
20
−1.5
V1
+
0
−0.5
V 1 , V 2 (in V )
VL3
T5 + TC5
M (in kΩ)
B
VL3
S
S1
Rof
f
VL3
+
2
0
0.5
1
1.5
0
2
b) t (in s)
12
0
0.5
1
1.5
2
c) t (in s)
0
V2
+
VL3 S4
S2
Cs
Rs
−
Integrator
VIG
V I G (in V )
_
V L3 (in V )
−2
RC
0
Rapid
Switching
−6
−8
−10
CH
−12
+
−4
0
0.5
1
1.5
2
−12
0
0.5
a)
1
1.5
2
e) t (in s)
d) t (in s)
Figure 5. a) Schematic of Synchronization Block. b), c), d), e) Graphs
showing operations of Synchronization Block. In these graphs preset mode
operates for the first 1s and online calibration mode operates for the next 1s.
VC > 0, T4 and TC2 will be ON making VCm = 0 or VC < 0
making it pass through T3 and thereby setting VCm = VC .
Case 3 (VIG > 0 ⇒ VL1 = −VDD , VL2 = VDD )
This happens when QM ≤ 0. Since QM can only increase, T3
is kept OF F but T2 is ON . Two cases are possible: if VC < 0,
TC4 and TC3 will be ON making VCm = 0 or VC > 0 making
it pass through T2 and thereby setting VCm = VC .
E. Synchronization Block
Operation of Charge Saturator Block assumes that: 1)
VIG = 0 when QM = 0 (or w = wl ). 2) Voltage VH across
R QS
capacitor CH equals − RCs CM
. This block ensures these two
s
conditions and thereby guarantees that the memristor and the
integrator in Fig. 3 are in “synchronization”. Synchronization
Block is shown in Fig. 5a). In Fig. 5a, the op-amp with the
memristor, the integrator and capacitor CH are indeed part of
the circuit shown in Fig. 3. Such a change in circuit connection
is possible using appropriate switching circuitry. This block
operates in two modes:
Preset Mode: We first ensure that VIG = 0, when w = wl . In
this mode switch S1 and S2 are ON and switch S3 and S4 are
OF F . When S2 is closed the residual charge in capacitor CH
will get neutralized thus ensuring VIG = 0. Next we make w =
RS VDD
wl . Note that V1 = − MRVCDD and V2 = − ofRf C . If M <
S
Rof
f then V1 > V2 ⇒ VL3 = −VDD . Hence the path ADBC
of wheatstone bridge arrangement will be active making the
ve
ve
current flow from (−) to (+) terminal of the memristor.
S
S
This will increase M till M = Rof
f . If M > Rof f , the path
S
ABDC is active making M decrease till M = Rof
f.
7
Online Calibration : Immediately after preset mode is complete, S1 and S2 are switched OF F and S3 and S4 are
RS V
switched ON . Now, V1 = − MRVCDD and V2 = − onRCDD .
S
In this step VL3 = VDD as M > Ron
always. Path ABDC
S
will be active driving M to Ron . As VL3 is given as an
R QS
we tune Rs and Cs s.t. − RC CM = −VDD , VIG ∈ [−VDD , 0] when
s s
memristor is in safe zone. Then we can directly use power supply −VDD
as the reference voltage for comparator O2 . This will eliminate the need
7 If
R QS
of capacitor CH and “Online Calibration”. However if − RC CM 6= −VDD
s s
(due to tuning error), this approach may drive the memristor to non-safe zone.
input to the integrator, capacitor CH will also get charged.
Note that in this step memristor will work in safe zone. Also
VIG = 0 when QM = 0 (ensured by preset mode). Hence
relation between VIG and QM will be governed by equation
S
(14). When M gets equalized to Ron
, QM = QSM , thereby
RC QS
.
making VH = VIG = − Rs CM
s
Each of the modes operate for a predefined time. The
resistors and hence the voltages V1 and V2 may get equalized
before the predefined time after which VL3 will switch rapidly.
Such rapid switching can be prevented by replacing the
comparator O3 by a cascaded arrangement of a differential
amplifier followed by a hysteresis block.
Various graphs corresponding to synchronization process
are shown in Fig. 5 b), c), d), e). Memristor Gain Block and
the Integrator of Charge Saturator Block should be periodically
synchronized to account for circuit non-idealities. One such
non-ideality can be caused if the capacitor CH is leaky causing
the voltage VH to drift with time.
Remark 3: In the discussion of the Synchronization Block
S
S
we have slightly misused the symbols Ron
and Rof
f . ResisS
S
tance of Ron and Rof f shown in Fig. 5a should be close
S
S
to the actual Ron
and Rof
f (as mentioned in Section II)
respectively. It is not necessary that they should be exactly
equal. However, there resistance must lie within the safe zone.
This alleviates analog implementation by eliminating the need
of precision resistors. It should be noted that the maximum
and the minimum resistance of the memristor in safe zone
S
S
is governed by the resistances Ron
and Rof
f used in the
S
S
Synchronization Block not the actual Ron and Rof
f.
To conclude, in this section we designed an Analog Gain
Control framework using Memristor. Schematic of Memristive
AGC is shown in Fig. 2 whose circuit parameters can be tuned
using Claim 1. Memristive AGC’s designed in this work is
“generic” in the sense that it can be used to implement several
Gain-Scheduled control algorithms.
IV. C ONTROL S TRATEGY
As mentioned in the introduction, we are interested in
designing Robust Adaptive Control Algorithms to tackle issues
like parameter uncertainty (caused by design errors) and time
varying nature (caused by ageing effect and atmospheric variation). ‘Simplicity’ is the key aspect of any control algorithm to
be implementable in analog framework as we do not have the
flexibility of ‘coding’. Robust Adaptive Control Algorithms
found in control literature cannot be implemented in an analog
framework due to their complexity. Here we propose a simple
gain-scheduled robust adaptive control algorithm which can
be easily implemented using Memristive AGC discussed in
Section III. We prove the stability of the proposed algorithm
using Lyapunov-Like method in Section IV-A.
Notations: The notations used in this paper are quite standard. R+ and Rn denotes the set of positive real numbers
and the n-dimensional real space respectively. I represents
identity matrix of appropriate dimension. |·| is the absolute
value operator. ∅ represents a null set. The bold face symbols
S and S+ represents the set of all symmetric matrices and positive definite symmetric matrices respectively. inf (·) (sup (·))
Rest to Scan Mode
Ė
h E
Scan to Rest Mode
6
Legend
RGS Gain
kM−km
T
Stabilizing Gain Set
Searching
t = t1
−γα
0
Ė
E
kM
km
Searching
t = t2
a)
kM
km
Case 1
Searching
Searching
t = t3
t = to
Searching
t = to + T
Found
t = to + 2T
kM
km
Searching
t = t4
km
kM
Searching
t = t5
Searching
kM
Case 2
km
Found
t = to
Searching
km
t = to + T
kM
c)
t = t5 + δt
Searching
t = t5 + δt
Found
t = to + 2T
Reflection at kM
−α
km
Jump NOT Allowed
kM
b)
Figure 6. a) Hysteresis Function as mentioned in equation (16). T is the
scan time. α ∈ R+ − {0} and γ ∈ [0, 1) are tuning constants. b) First six
images shows the scan/rest mode of RGS. The last three images depicts the
concept of drifting. c) Figure showing the worst case scan time.
represents the infimum (supremum) of a set. For a matrix
A, λm (A) and λM (A) denotes the minimum and maximum
eigenvalue of A respectively. A B implies B −A is positive
semi-definite while A ≺ B implies B − A is positive definite.
The euclidean norm of a vector and the induced spectral norm
of a matrix is denoted · . The operator × when applied
on sets implies the cartesian product of the sets. Conv {A}
implies the convex hull of set A. Analysis presented futher
in this paper uses ideas from real analysis, linear algebra
and convex analysis. For completeness, these ideas are briefly
reviewed in Appendix C.
A. Reflective Gain Space Search (RGS)
Consider a SISO
variant (LTV) system
uncertain linear time
T
with states x = x1 x2 · · · xN ∈ RN , input u ∈ R and
output y ∈ R described by the following state space equation
ẋ = A (t) x + B (t) u ; y = Cx = x1 where,
(15)
0
1
···
0
0
..
..
..
..
..
.
.
.
.
A (t) =
B (t) = .
0
0
0
···
1
a1 (t) a2 (t) · · · aN (t)
b (t)
The output matrix C = 1 · · · 0 0 .
Assumptions:
1) The order N of the system is known.
2) The variation of ai (t) , ∀i = 1, 2, . . . , N and b (t) due to
parameter uncertainty and time variation is bounded, i.e.
(A (t) , B (t)) belongs to a bounded set L. L is assumed
to be a connected set. A (t) and B (t) are not known but
knowledge of L is assumed. This assumption basically
means that we don’t have knowledge about ai (t) and
b (t) however we know the range in which they lie.
3) Ȧ ≤ δA and Ḃ ≤ δB . Knowledge of δA and δB
is assumed. This assumption basically means that A (t)
and B (t) are continous in time.
4) Let b (t) ∈ [bl , bu ] s.t. bl ≤ bu , and either bl > 0 or bu <
0. This choice of bl and bu is explained in Section IV-B.
Example to clarify the concept of L, δA and δB is dealt
later in Section IV-B however we give the following example
to better explain Assumption 4.
Example 1: Consider two cases: 1) b (t) ∈ [−2, 3] 2) b (t) ∈
[0.5, 3]. According to Assumption 4, Case 2 is possible while
Case 1 is not. This example clearly illustrates that according
to Assumption 4 the sign of b (t) does not change with time
and is known with absolute certainty. Note that sign of b (t)
decides the sign of static gain8 of the system. So Assumption
4 in certain sense means that the sign of static gain does not
change with time and is known with absolute certainty. For
all practical scenario such an assumption is valid.
Notice that all assumptions are mild from practical viewpoint. Our aim is to regulate the output around the operating
point y ∗ = x∗1 = r. Conventional set-point control consist
of a bias term ub (t) plus the regulation control input ur (t),
i.e. u (t) = ub (t) + ur (t). Here we assume that ub (t) is
T
designed s.t. x∗ = r 0 . . . 0 is the equilibrium point
and concentrate on the synthesis of ur (t). For simplicity
T
we consider r = 0, i.e. x∗ = 0 0 . . . 0
is the
equilibrium point. As we are dealing with a linear system
the same analysis is valid for r 6= 0. The controller structure
is, ur (t) = −K (t) y (t), where K (t) ∈ [km , kM ] is the
variable gain s.t. 0 < km < kM . Let E = xT P x be the
Lyapunov Candidate Function9 with P ∈ S+ . Then RGS is as
simple Gain-Scheduled control strategy given by the following
equation
!
Ė
; ur = −Ky
(16)
K̇ = sgn · h
E
is a hysteresis function
where, sgn ∈ {−1, 1} and h Ė
E
shown in Fig. 6a. Working of RGS can be explained as:
1) RGS finds the stabilizing gain10 , i.e. the gain which
renders Ė < 0 (Ė < −αE in a more strict sense),
by reflecting back and forth between [km , kM ]. RGS is
said to be in "Scan Mode" when it is scanning for the
stabilizing gain. It goes to "Rest Mode" when stabilizing
gain is found. RGS Scan Cycle is clearly depicted in the
first six images of Fig. 5b).
2) RGS uses Ė as stability indicator. Ė is found by
differentiating E which in turn is calculated using E =
T
x (t) P x (t). To get the states x (t) we differentiate the
output y (t) N − 1 times.
3) Scan Mode is triggered when Ė > −γαE (refer Fig.
6a). Scan Mode is associated with a scan time of
T , i.e.
time taken to scan from km to kM . Hence,
= kM T−km . The value of sgn is 1 when gain
h Ė
E
space is searched from km to kM and −1 otherwise.
Scan mode operates till Ė > −αE.
8 Unlike LTI system, static gain for LTV system may not be well defined.
b(t)
Here we define static gain of LTV system (15) as a (t) .
1
9 Use of time invariant Lyapunov Function to analyse stability of LTV
systems has been used in [25] (Chap. 5, 7) and [26] (Chap. 3).
10 The term ”stabilizing gain” has been slightly misused. Stability of LTV
system cannot be assured even if the closed loop system matrix, A (t) −
B (t) K (t) C, has negative real eigen part for all t > 0 ([27], [28]).
7
4) Rest
is triggered when Ė < −αE. In this mode
Mode
Ė
= 0, i.e. the stabilizing gain is held constant.
h E
Rest mode operates till Ė < −γαE.
5) In the process of finding stabilizing gain, LTV system
may expand (E increases) in Scan Mode and will
contract (E decreases) in Rest Mode. RGS ensures that
even in the worst case, contraction is always dominant
over expansion, guaranteeing stability.
Stabilizing Gain Set11 KP,s (t) for a given P ≻ 0 and s ∈
R+ at time t is defined as
n
T
KP,s (t) = K ∈ R : AC (t) P + P AC (t) −sI,
o
AC (t) = A (t) − B (t) KC, km ≤ K ≤ kM
Lemma 1:
T If KP,s (t) 6= ∅, ∀t ≥ 0 then under Assumption
3, KP,s (t) KP,s (t + δt) 6= ∅ if δt → 0.
Proof: This lemma basically means that stabilizing gain set
will drift. If the stabilizing gain set is drifting then there will
be an intersection between stabilizing gain sets at time t1 and
t2 if t2 − t1 is small. Drifting is obvious under Assumption 3
however a formal proof is given in Appendix A.
Concept of “drifting” is clearly depicted in the last three
images of Fig. 5b. Notice that at t = t5 the stabilizing gain set
is almost found. Two possible cases are shown in Fig. 5b for
t = t5 + δt where δt → 0. In the first case the stabilizing gain
set is drifting while in the other case the stabilizing gain set
jumps. In the first case the stabilizing gain is found and RGS
goes to Rest Mode. In the second case RGS will just miss the
stabilizing gain set. Hence if the stabilizing set keeps jumping,
the scan mode may never end. Hence if the stabilizing set
keeps jumping, the scan mode may never end. As mentioned
in Lemma 1, stabilizing set KP,s (t) never jumps if Assumption
3 is valid. Therefore Lemma 1 is important to guarantee an
upper bound on the time period of Scan Mode from which we
get the following Lemma.
Lemma 2: If KP,s (t) 6= ∅, ∀t ≥ 0 then under Assumption
3, the maximum time period of Scan Mode is 2T .
Proof: It is a direct consequence of Lemma 1. The worst
case time period of 2T happens only in two cases. Both the
cases are shown in Fig. 6c.
Theorem 1: LTV system characterized by equation (15) and
set L is stable under RGS Control Law proposed in equation
(16) if it satisfies the following criterion
1) [C1] If corresponding to all (A, B) ∈ L there exist
atleast one gain KAB ∈ [km , kM ] s.t.
Proof: Consider the Lyapunov candidate E = xT P x which
when differentiated along systems trajectory yields
Ė = xT Q (t) x ≤ λM (Q (t)) x
T
for some s ∈ R+ .
2) [C2] Scan time T <
λm (P )α
2
(1−γ )
2
8δ max(λL
M ,0)
λL
M
11 The
stabilizing gain set KP,s (to ) at time t = to , is just a “LyapunovWay” of describing the set of gains which will stabilize the corresponding
LTI system (A (to ) , B (to ) , C) at time t = to .
≤
Ė
2
(18)
λL
M x
2
≤
λL
M
E
λm (P )
(19)
We want to find the maximum possible increase in E in the
Scan Mode. At this point it is important to understand that
[C1] is another way of saying that KP,s (t) 6= ∅, ∀t ≥ 0.
Hence if [C1] is true, then Lemma 2 can be used to guarantee
that the maximum period of scan mode is 2T . Let E = Es
and t = ts at the end of scan mode. Maximum expansion in
E is obtained by integrating inequality (19) from t = t∗ to
t = t∗ + 2T
ES ≤ βs E ∗ where,
(20)
L
2λ T
βs = exp λmM(P ) , the worst case expansion factor. The end
of scan mode implies that a stabilizing gain is found, i.e. at
t = ts , Ė (ts ) ≤ −αE (ts ) (refer Fig. 6a), and the rest mode
starts. Here it is important to note the relation between α and
s (refer [C1]). [C1] assures that at t = ts a gain K can be
found s.t.
Ė (ts ) ≤ λM (Q (ts )) kxk
2
=
≤
2
−s kxk
s
E (ts ) (21)
−
λM (P )
Comparing inequality (21) with Fig. 6a we get α = λMs(P ) .
Let τ be the duration of rest mode. We want to find the
minimum possible decrease in E in rest mode before it again
goes back to scan mode. Again,
Ė
=
xT Q (t) x = xT [Q (ts ) + ∆ (t)] x
=
Ė (ts ) + xT ∆ (t) x
where,
(22)
∆ (t) = Q (t) − Q (ts ). As K (t) = K (ts ) ; ts ≤ t ≤ ts + τ
(K̇ = 0 in rest mode), ∆ (t) can be expanded as
. Here γ ∈ [0, 1),
δ = δA + δB kM and
= max λM (Q) where the set
L
Q∈SQ
n
T
L
SQ
= Q : Q = (A − BKC) P + P (A − BKC)
o
(A, B) ∈ L, K ∈ [km , kM ]
≤ λL
M x
where, Q (t) = AC (t) P + P AC (t) and AC (t) = A (t) −
B (t) K (t) C. Definitely, Q (t) ∈ S as it is a sum of
T
the matrix P AC (t) and its transpose AC (t) P . Note that,
L
λM (Q (t)) ≤ λM , ∀ (A, B) ∈ L and ∀K ∈ [km , kM ]. When
λL
M < 0, stability is obvious as according to inequality (18)
Ė < 0, ∀ (A, B) ∈ L and ∀K ∈ [km , kM ]. As Ė < 0 for
any ∀K ∈ [km , kM ], stability if guaranteed even if scanning
is infinitely slow, i.e. scan time T → ∞. This is in accordance
with [C2].
∗
We now consider the case when λL
M > 0. Say at time t = t ,
∗
E = E and the system goes to scan mode to search for a
stabilizing gain. From inequality (18) we have,
T
(A − BKAB C) P + P (A − BKAB C) −sI (17)
2
∆ (t)
=
T
[∆A (t) − ∆B (t) K (ts ) C] P
+P [∆A (t) − ∆B (t) K (ts ) C]
(23)
where, ∆A (t) = A (t) − A (ts ) and ∆B (t) = B (t) − B (ts ).
Taking norm on both side of equation (23) yields
∆ (t)
≤
≤
≤
2 P [∆A (t) − ∆B (t) K (ts ) C]
∆A (t) + ∆B (t) K (ts )
2 P
2λM (P ) δ∆t
C
(24)
8
where, δ = δA + δB kM and ∆t = t − ts . Note that C = 1.
Also kP k = λM (P ) for all P ∈ S+ . Getting back to equation
(22) we have
Ė
=
≤
≤
≤
Ė (ts ) + xT ∆ (t) x ≤ −s x
−s x
2
+ ∆ (t)
x
2
+ ∆ (t)
x
2
Er
βr = exp −
α
2
(1−γ
2
4δ
α (1 − γ)
2δ
(26)
where,
(28)
2
α (1−γ 2 )
2λL T
+ λmM(P ) . If β ∈ (0, 1), there
β = βs βr = exp −
4δ
will be an overall decrease in E in a rest-scan cycle. β ∈ (0, 1)
can be assured if
λm (P ) α2 1 − γ 2
(29)
T <
8δλL
M
Now we want to prove that inequality (29) ensures that
E (t) → 0 (and hence12 x (t) → 0) as t → ∞.Before
proceeding forward we note two things: 1) Theoretically
.
predictable duration of a rest-scan cycle is Trs = 2T + α(1−γ)
2δ
2) Trs is a conservative estimate of the duration of a rest-scan
cycle. Hence it may as well happen that the rest mode lasts
for a longer time leading to unpredictable contraction. This is
clearly shown in Fig. 7. Now we want to put an upper bound
on E (t). Say we want to upper bound E (t) in any one blue
dots shown in Fig. 7, i.e. in the green zones. This can be done
as follows
(30)
where, E = Eo at t = 0, η (t) is the number of complete
rest-scan cycle13 before time t. In inequality (30), β η(t) is
the predictable contraction factor contributed by the red zones
in Fig. 7 and the last term is the unpredictable contraction
factor contributed by the green zones in Fig. 7. Note that in
green zones all we can assure is that, Ė ≤ −γαE, which
when integrated yields the last term of inequality (30). Now
we want to upper bound E (t) in one of the red dots shown
in Fig. 7 which can be done as
q
E
where
E = xT P x ≥ λm (P ) kxk2 it implies kxk ≤
λm (P )
λm (P ) > 0 as P ≻ 0. Hence if E → 0 then kxk → 0 implying x → 0.
13 Without additional knowledge of system dynamics, η (t) is not predictable.
12 As
tp2
t2
TIME
tp3 t3
tp4
0
−γ α
−α
TIME
Figure 7. Plot showing the actual and predictable duration of rest-scan
cycle. Red zones shows the predictable duration, i.e. tpi − ti−1 = Trs ,
while the actual duration is ti − ti−1 . Also note that EiR ≤ βEiS , the
theoretically predictable contraction in a rest-scan cycle. The green zones
shows the unpredictable rest modes.
+
E (t) ≤ Eo βs β η(t) exp −γα (t − Trs − η (t) Trs )
(31)
+
βE ∗
E (t) ≤ Eo β η(t) exp (−γα (t − η (t) Trs ))
t1
Ė
E
0
≤ βr Es where,
(27)
)
, the worst case contraction factor.
≤
tp1
(25)
Using inequality (20) and (27) we get
Er
E2S
E2R
0
. Let E = Er at the end of rest mode.
Hence, τmin = α(1−γ)
2δ
We integrate inequality (25) from t = ts to t = ts + α(1−γ)
2δ
to find the minimum possible contraction in rest mode,
E
2
To find the minimum possible value of τ we can substitute
Ė = −γαE in inequality (25). This gives,
≥
Unpredictable Rest Modes
E1R
2
− [s − 2λM (P ) δ∆t] x
− (α − 2δ∆t) E
τ
Predictable Rest−Scan Cycle Duration
E1S
In inequality (31), the operator (a) = max (0, a). Inequality (31) resembles (30) except that in this case the system may
be in scan mode leading to the extra expansion factor βs in the
expression. There is an extra −Trs in the last term to deduct
the predictable time of the current rest-scan cycle. Among
inequality (30) and (31) , (31) is definitely the worst case upper
bound on E (t) due to the presence of two additional terms,
i.e. −Trs inside exp (−γα (·)) and βs ≥ 1. From inequality
(31) it is clear that if β ∈ (0, 1) then, E (t) → 0 as t → ∞.
This completes the proof of Theorem 1.
Remark 4: From inequality (31) convergence is better if β
is small. According to inequality (28), β decreases as α (or
s) increases and T decreases. The effect of γ on β is more
involved. In inequality (31), if γ increases then β increases
(refer inequality (28)). Thus predictable contraction decreases
(due to large β) but unpredictable contraction increases (due
to large γ). Hence γ can be neither too high nor too low.
Remark 5: Note that RGS strategy doesn’t impose any
theoretical limit on the rate of variation, δA and δB , of LTV
system. This is perhaps one of the novelty of RGS.
Remark 6 (RGS for LTI Systems): For uncertain LTI systems, Theorem 1 will have [C1] without any change. However,
[C2] will no longer impose an upper bound on T but will
just demand a finite non-zero value. This will ensure that a
stabilizing gain is found within a finite time period of 2T .
B. Bilinear Matrix Inequality(BMI) Optimization Problem
Foundation of RGS is based on the validity of [C1] for a
given uncertain LTV/LTI system. We pose a BMI optimization
problem to check the validity of [C1] and in the process find
the value of P and s needed for implementing RGS.
We start our discussion by formally defining the set L.
Let A (t) and B (t) be functions of p independent physical
T
parameters Θ = [Θ1 , Θ2 , . . . , Θp ] , i.e. (A (t) , B (t)) =
F (Θ (t)). Θ (t) is time varying and at every time instant is
9
also associated with a uncertainty set because of parameter
uncertainty. We assume that every
physical parameter Θi is
H
L
Θ
,
Θ
bounded,
i.e.
Θ
(t)
∈
Θ
i
i
i
. Then
L H
(t) ∈ S, where
L
H
H
S = ΘL
1 , Θ1 × Θ2 , Θ2 ×. . .× Θp , Θp a p−dimensional
hypercube. We assume no knowledge of the time variation of
Θ, i.e. Θ (t), but we assume the knowledge of S. Then L is
the image of S under the transformation F , i.e. F : S → L
where S ⊂ Rp and L ⊂ RN ×N × RN ×1 .
Remark 7: The system described by equation
(15)
can be represented
using the compact notation
a1 a2 · · · aN | b . Hence one can assume that
L ⊂ RN +1 rather than L ⊂ RN ×N × RN ×1 . This reduces
notational complexity by making the elements of L a vector
rather than ordered pair of two matrix.
At this point we would be interested in formulating [C1]
as an optimization problem. With a slight misuse of variable
s we can state the following problem.
Problem 1: [C1] holds if and only if the optimal value of
the problem
minimize: s
subject to:
T
(A − BKAB C) P +P (A − BKAB C) sI ∀ (A, B) ∈ L
P ≻0
with the design variables s ∈ R, P ∈ RN ×N and KAB ∈
[km , kM ] is negative.
Note the use of KAB instead of K in Problem 1. It is
to signify that we do not need a common gain K for all
(A, B) ∈ L. Perhaps we can have seperate gains KAB for
every (A, B) ∈ L satisfying Problem 1 and the RGS strategy
described in Section IV-A will search for it. However the
optimization problem described in Problem 1 is semi-infinite14
and is hence not computationally tractable. We will now pose
Problem 1 as a finite optimization problem.
We can always bound the compact set L by a convex
polytope. Define a polytope15 P = Conv {V} where V =
{(Ai , Bi ) : i = 1, 2, . . . , m}, the m vertices of the convex
polytope s.t., if (A, B) ∈ L then (A, B) ∈ P. Then L ⊆ P.
We now give the following example to illustrate concepts
related to S, L and P (discussed above) and also discuss how
to calculate δA and δB (discussed in Assumption 3).
Example 2: Consider the following scalar LTV system:
ẋ1 =
p ′
3
2
b c (t)
a (t) c (t)
x
+
u;
1
2/3
b′
a (t)
y = x1
(32)
′
Here a, b , c are the physical parameters which may
represent quantities like mass, friction coefficient, resistance,
′
capacitance etc. a and c are time varying while b is an uncer
∗
tain parameter. a and c varies as: a (t) = a∗ − a2 exp − τta ,
∗
∗
′
c (t) = c2 + c2 exp − τtc and b lies in the uncertainty
h
i
∗
set b∗ , 3b2 . Here physical parameter Θ = [a, b, c] and
hence p = 3. Fromh the time
i variation hof∗ a and
i c we can
∗
conclude that a ∈ a2 , a∗ and c ∈ c2 , c∗ . Therefore,
14 Semi-Infinite
15 For
optimization problems are the ones with infinite constraints.
a given L, P is not unique.
(a∗ , 3b∗ /2, c∗ )
!
′
a, b , c
!
"
′
(a1 , b) = F a, b , c
"
(a∗ /2, b∗ , c∗ /2)
(a1 , b)
b)
a)
c)
Figure 8. a) Uncertainty set S associated with the physical parameters. The
coordinates of two diagonally opposite vertices is shown in the figure. b)
Uncertainty set L associated with the LTV system characterized by equation
(15). c) Bounding Convex Polytope P of set L. The red lines are the edges
of the polytope P. P has 5 vertices which forms the elements of set V.
h ∗
i h ∗
i h
i
∗
S ∈ a2 , a∗ × b∗ , 3b2 × c2 , c∗ which is an hypercube
as shown in Fig. 8a.
To find set L first note that for this example N = 1 as
the system described by equation (32) is scalar. Therefore
T
T
L
⊂ R2 and
every element [a1 , b] ∈ L is a map [a1 , b] =
′
F a, b , c where
" a3 c2 #
′
′
F a, b , c = √b ′
(33)
b c
a2/3
One method to obtain set L is to divide the hypercube S
into uniform grids and then map each grid using equation
(33). Set L for this example is shown in Fig. 8b. Though this
method to obtain L from S is computationally expensive, one
must appreciate that for a general system there is no other
elegant method. Now we want to find a convex polytope P
which bounds L. One such polytope is shown in Fig. 8c. This
polytope has m = 5 vertices. In practise polytope P can be
found using convex-hull functions available widely in many
programming languages. One popular reference is [29].
We now discuss how to calculate δA and δB for this
example. At this point one must appreciate that in most
practical scenario the controller designer may not explicitly
know the equations governing the rate of change of physical
parameters, i.e. say in this example the designer may not
know a (t) and c (t) explicitly. However it seems practical
to assume knowledge of the bounds on the rate of change of
physical parameters, i.e. controller designer may know that
a∗
c∗
0 < ȧ ≤ 2τ
and − 2τ
≤ ċ < 0. There is no standard way to
a
c
calculate δA and δB from these bounds. Also dependent on
the method used, one may get different estimate of δA and
δB. For this example δA and δB is calculated as follows.
2 2
3 2
|3c a ȧ+2a3 cċ|
a(t) c(t)
d
δA = max dt
= max
b′
b′
=
max(3 sup(c)2 sup(a)2 max(ȧ), 2 sup(a)3 sup(c) max(|ċ|))
inf (b′ )
∗
=
=
∗
a
c
max(3(c∗ )2 (a∗ )2 ( 2τ
), 2(a∗ )3 (c∗ )( 2τ
))
a
c
(b∗ )2
(a∗ )3 (c∗ )2
2(b∗ )2
max
3
2
τa , τc
10
δB = max
√
d
dt
b′ c(t)
a(t)
√
2/3
√
ċ
b′ − 23a5c/3ȧ + 2√ca
2/3
√
∗
a∗
p
2 sup(c)( 2τ
(c )
)
a
= sup (b′ )
+ √ 2τc
5/3
= max
3 inf(a)
√
c∗
m
X
2
inf(c) inf(a)
2/3
i=1
m
X
2
1
2/3
3τc + 25/6 τc
(a∗ )
Lemma 3: Under Assumption 4, if for a given P ∈ RN ×N
and s ∈ R there exist a Ki ∈ [km , kM ] s.t.
=
T
(Ai − Bi Ki C) P + P (Ai − Bi Ki C) sI, (Ai , Bi ) ∈ V
then there exist a KAB ∈ [km , kM ] s.t.
T
(A − BKAB C) P +P (A − BKAB C) sI
∀ (A, B) ∈ L
Proof: We first define a N × N matrix Γ all elements of
which are 0 except its (N, 1) element which is 1. Also note
that all (A, B) ∈ L can be written as a convex combination
of the elements V of the convex polytope P. Mathematically,
∀ (A, B) ∈ L there exists scalars θi ≥ 0, i = 1, 2, . . . m s.t.
(A, B) =
m
X
θi (Ai , Bi ) and
m
X
θi = 1
i=1
i=1
where, (Ai , Bi ) ∈ V ∀i = 1, 2, . . . , m. Now,
T
(A − BKAB C) P + P (A − BKAB C)
= AT P + P A − bKAB ΓT P + P Γ
=
m
X
θi ATi P
i=1
T
+ P Ai − Γ P + P Γ KAB
m
X
θi bi (34)
i=1
Equation (34) is possible because BC = b (t) Γ owing to the
special structure of B and C matrix. Using the inequality
T
(Ai − Bi Ki C) P + P (Ai − Bi Ki C) sI, (Ai , Bi ) ∈ V
in equation (34) we have
T
(A − BKAB C) P + P (A − BKAB C)
#
"m
m
X
X
θi bi ΓT P + P Γ + sI
θi Ki bi − KAB
(35)
i=1
i=1
Choosing, KAB =
m
X
θi K i b i
i=1
m
X
in inequality (35) yields
θi b i
i=1
≤ KAB ≤
m
X
θ i k M bi
i=1
m
X
θ i bi
⇒ km ≤ KAB ≤ kM
i=1
This concludes the proof of Lemma 3. The importance
of Lemma 3 is that it reduces the semi-infinite optimization
problem posed in Problem 1 into a finite optimization problem.
This results into the most important result of this section.
Theorem 2: [C1] holds if the optimal value of the problem
minimize: s
subject to:
T
(Ai − Bi Ki C) P + P (Ai − Bi Ki C) sI ∀ (Ai , Bi ) ∈ V
km ≤ Ki ≤ kM , i = 1, 2, . . . , m
P ≻0
with design variables s ∈ R, P ∈ RN ×N and Ki ∈ R, i =
1, 2, . . . , m is negative.
Proof: The proof follows from Problem 1 and Lemma 3.
Note that while Problem 1 is a necessary and sufficient
condition, Theorem 2 is a sufficient condition. This is due to
the fact that L ⊆ P leading to some conservativeness in the
optimization problem proposed in Theorem 2.
Theorem 2 poses the classical BMI Eigenvalue Minimization
Problem (BMI-EMP) in variables P and Ki . As such BMI’s
are non-convex in nature leading to multiple local minimas.
Several algorithms to find the local minima exist in literature
(see [30], [31]). Algorithms for global minimization of BMI’s
is rather rare and have received attention in works like [32],
[33]. Our approach is similar to [32] which is basically a
Branch and Bound algorithm. Such an algorithm works by
bounding s by a lower bound ΦL and an upper bound ΦU ,
i.e. ΦL ≤ s ≤ ΦU . The algorithm then progressively refines
the search to reduce ΦU − ΦL . Our main algorithm consists of
Algorithm 4.1 of [32] (Page 4). The Alternating SDP method
mentioned in [34] (Page 2) is used for calculating ΦU . For
calculating ΦL we have used the convex relaxation technique
first introduced in [33] (also discussed in [34], equation (9)).
In Appendix B we present a working knowledge of our
algorithm. For detailed explanation the readers may refer the
corresponding work [32], [34].
Theorem 2 poses an optimization problem with (Ai , Bi ) ∈
V, km and kM as inputs and P , s and Ki , i = 1, 2, . . . , m
as outputs. But km and kM are not known. An initial esRH
RH
is obtained by
and kM = kM
timate of km = km
using Routh-Hurwitz criteria17 for each (Ai , Bi ) ∈ V. Let
Ki = KiRH , i = 1, 2, . . . , m be the output of the optimization
∗
= min KiRH
problem with this initial estimate. Let km
1≤i≤m
∗
= max KiRH , then the following holds:
and kM
1≤i≤m
T
(A − BKAB C) P + P (A − BKAB C) sI
Now all we need to do is to prove that the chosen KAB
lies in the interval [km , kM ]. We know that km ≤ Ki ≤ kM .
Therefore under Assumption 416 ,
16 Without
θ i bi
i=1
5/3
θ i k m bi
Assumption 4, the denominator
Pm
i=1 θi bi may become 0.
RH
RH
∗
RH
∗
≤
. This is because km
≤ kM
and kM
≥ km
1) km
RH
KiRH ≤ kM
, ∀ i = 1, 2, . . . , m and hence
RH
RH
≤ min KiRH ≤ max KiRH ≤ kM
km
1≤i≤m
1≤i≤m
17 Routh-Hurwitz criteria is used to find the bounds on the feedback gains
for which a SISO LTI system is closed loop stable. Refer [35] for details.
11
2) The outputs, P , s and Ki , obtained by running the opRH
RH
timization algorithm with a) km = km
and kM = kM
∗
∗
or b) km = km and kM = kM , will be the same. This is
because the gains KiRH obtained by running the optimization
RH
RH
algorithm with km = km
and kM = kM
also satisfies the
∗
RH
∗
bounds km ≤ Ki ≤ kM .
∗
∗
Therefore if we choose km = km
and kM = kM
∗
∗
we would get a smaller RGS gain set, i.e. (kM − km ) ≤
RH
RH
kM
− km
, without compromising the convergence coefficient s. A smaller RGS gain set will ease the controller design
in an analog setting.
We now give a bound on λL
M (defined in Theorem 1). It
is not possible to calculate λL
M with the formula given in
L
Theorem 1 as it will involve search over the dense set SQ
.
Define a setn
T
P
SQ
= Q : Q = (A − BKC) P + P (A − BKC)
o
(A, B) ∈ P, K ∈ [km , kM ]
L
Let λP
M = max λM (Q). As L ⊆ P it is obvious that, SQ ⊆
P
Q∈SQ
P
L
P
SQ
(SQ
defined in Theorem 1). Therefore18 , λL
M ≤ λM . Thus
L
P
λM gives an estimate of λM by upper bounding it. It can be
shown that for a scalar gain K and the specific structure of
P
B and C (refer equation (15)), it can be proved that SQ
is
compact convex set. Also λM (Q) is a convex function for all
Q ∈ S+ (refer Page 82 of [36]). It is well known that global
maxima of a convex function over a convex compact set only
occurs at some extreme points of the set (refer [37]). Thus
P
the problem of maximizing λM (·) over Q ∈ SQ
reduces to
V
maximizingnλM (·) over Q ∈ SQ where
T
V
SQ
= Q : Q = (A − BKC) P + P (A − BKC)
o
(A, B) ∈ V, K ∈ {km , kM }
P
. This leads to the following formula
the set of vertices of SQ
P
λL
M ≤ λM = max λM (Q)
V
Q∈SQ
(36)
Inequality (36) can be used to obtain an estimate of λL
M.
Remark 8: As mentioned in the beginning of Section IV, for
a controller to be implementable in analog framework it has
to be simple. Though the synthesis of RGS parameters (km ,
kM , T , α, γ and P ) is complex, one must appreciate that
designing a controller is a ’one time deal’. RGS in itself is a
simple gain-scheduled controller governed by equation (16).
V. E XAMPLE
Parallel Plate Electrostatic Actuator (PPA) shown in Fig. 9a
forms a vital component of several miniaturized systems. We
perform regulatory control of PPA to show effectiveness of
the proposed analog architecture and RGS strategy. PPA’s as
described in [20] (page 183) follows the following dynamics
mÿ + bẏ + ky =
εA
2 (G − y)
2
2 Vs
(37)
18 This is more like saying that the maximum of a function (λ
M (·) here)
P here) will be greater than the maximum over a smaller
over a bigger set (SQ
L here).
set (SQ
which is nonlinear in nature. Plant parameter includes spring
constant κ, damping coefficient b, moving plate mass and area
m and A respectively, permittivity ε and maximum plate gap
G. As we are interested in only regulatory control, we use the
following linearized model
#
# "
"
0
0
1
x1
x˙1
√
+
=
2εAκGo ur (38)
b
o)
x˙2
x2
− κ(G−3G
−m
m(G−Go )
m(G−Go )
where, x1 is the displacement from the operating point Go .
Plant output is the moving plate position y = Go + x1 .
Plant input is Vs = Vb + Vu . Comparing with RGS theory,
Vb = ub , the bias voltage to maintain Go as the operating
point and Vu = ur = KVe = K (Go − y) = −Kx1 , the
regulation voltage supplied by the Memristive AGC. Plant
parameter includes spring constant κ, damping coefficient b,
moving plate mass and area m and A respectively, permittivity
ε and maximum plate gap G. For Go > G
3 , the system has an
unstable pole. We perform regulation around Go = 2G
3 .
The true plant parameters are, m = 3×10−3 kg, b = 1.79×
−3
10−2 N sm−1 , G = 10−3 m, A = 1.6×10
m2 . G and A are
uncertain but
G ∈ SG = 0.5 2.0 × 10−3 m,
lie in the
set−3
A ∈ SA = 1.2 1.8 × 10 m2 . ε varies due to surrounding
condition as ε (t) = 5εo + 1.5εo sin (7.854t) where εo is the
permittivity of vacuum. Spring loosening causes κ to decrease
as κ (t) = 0.08+0.087e−0.8t N m−1 . Now we will discuss the
steps involved in implementing RGS in an analog framework.
Step 1 (Identify S): S is the uncertainty set of physical
param-
3.5ε
6.5εo
eters first defined
in
Page
8.
Define
set
S
=
o
ε
and Sκ = 0.08 0.167 N m−1 . Then the ordered pair
(G, A, ε, κ) ∈ S = SG × SA × Sε × Sκ . Note that here p = 4.
Step 2 (Find P): To do this we numerically map S to L
(as shown in Example 2) and then use convhulln function of
MATLAB to find a convex polytope P s.t. L ⊆ P. In this case
P consist of m = 4 vertices. We explicitly don’t mention the
computed P for the sake of neatness.
Step 3 (Compute P , s, α, km , kM ): Solving optimization
problem proposed in Theorem 2 we get, s = 0.917, km =
0.9937 0.0757
8600 and kM = 86000 and P =
. Here,
0.0757 0.0895
λM (P ) = 1, hence α = λMs(P ) = 0.917.
Step 4 (Compute λm (P ), λL
M , δ): For the calculated P ,
λm (P ) = 0.083. From equation (36), λL
M = 29.1. We will
now calculate δA and δB for this example. As mentioned
in Example 2 the controller designer does not know κ (t)
and ε (t) explicitly but they do know the bounds on κ̇ and
ε̇ which for this example is: (−0.087 × 0.8) ≤ κ̇ < 0 and
− (1.5 × 7.854 × εo ) ≤ ε̇ ≤ (1.5 × 7.854 × εo ).
First note that (2 × 2) element of the system matrix of the
linearized PPA model (described by equation (38)) is not time
varying. Hence δA can be simply written as
d
o)
− κ(t)(G−3G
δA = max dt
m(G−Go )
= max
=
d
dt
3 max(|κ̇|)
m
−
κ(t)(G−3( 2G
3 ))
m(G− 2G
3 )
12
100
b
50
G
m
A
+
y
x1 (in µm)
κ
Operating
Point
Go
x1
Moving Plate
Vs
0
−50
−100
Fixed Plate
−150
a)
−200
x1
+
K
km
P22
b)
0
R1
+
Vsh
R2
8
TC1
−
Ė
E
Ė
V
+
TC3
Go
R
−
VT
+
y
Ve
VC
Memristive
Analog
Gain
Controller Vu
VL1
VDD −VDD
3
3.5
0 −8 0.5
x 10
1
1.5
2
2.5
e) t (in s)
3
3.5
−
E
+
Voltage Toggler
+
2.5
6
Hysteresis Block
R
2
d) t (in s)
Scan Mode
Rest Mode
2
R3
1.5
4
T1
−VDD
TC2
1
6
x2
d
dt
0.5
8
E
2P12
E
0
10
P11
4
2
VL2
0
0
0.5
1
c)
1.5
f)
2
2.5
t (in s)
3
3.5
Figure 9. a) Schematic of PPA. b) Analog Implementation of E = xT P x
for P ∈ R2×2 . Note that, P12 = P21 as P ∈ S. c) Analog Implementation
of RGS. d), e), f) Plots of plate position error x1 (from operating point Go ),
normalized RGS gain kK and Lyapunov Function E = xT P x with respect
m
to time.
δB = max
= max
=
1
m
=
1
m
=
1
m
q
q
q
d
dt
d
dt
√
q
2ε(t)Aκ(t)Go
m(G−Go )
2ε(t)Aκ(t)( 2G
3 )
m(G− 2G
3 )
12 sup(SA )
inf(SG )
max
12 sup(SA )
inf(SG )
max
12 sup(SA )
inf(SG )
!!
√
˙
εK
κ√
ε̇+ε
√κ̇
2 ε κ
sup(Sκ ) max(|ε̇|)+sup(Sε ) max(|κ̇|)
2
√
inf(Sε )
√
inf(Sκ )
Substituting the values in the above equation of δA and δB we
get δ = δA + kM δB = 1351.
Step 5 (Compute T and γ): We arbitarily choose γ = 0.5.
Substituting γ = 0.5 in inequality (29) we get T < 1.66 ×
10−7 s. Hence we choose T = 10−7 s.
Step 6 (Analog Design): Fig. 9b and 9c combined shows the
analog implementation of RGS. The error voltage Ve is the
plate position error, i.e. Ve = −x1 = (Go − y). The gain
control voltage VC is controlled by the Hysteresis Block and
the Voltage Toggler block. In Rest Mode VC = 0 thereby
ensuring that the gain M is constant (refer equation (12)). In
Scan Mode VC ∈ {−VDD , VDD }, VC = VDD to scan from
S
S
S
S
Rof
f to Ron and VC = −VDD to scan from Ron to Rof f
(refer equation (12)). RC controls Ṁ, the rate of change of
DD T
gain (refer equation (12)). Setting RC = VQ
ensures a
S
M
scan time of T . The derivation of RC is simple. Note that the
S
S
resistance of memristor will change from Rof
f to Ron if we
pass a charge QSM through it. We want this change to happen
QS
in time T and hence the desired current is TM . As VC = VDD
DD T
.
= VQ
in scan mode, the required resistance RC = QVSDD
S
( M/T )
M
The Hysteresis Block is a conventional inverting schmitt
2(VDD −α)
DD −α)
trigger. Tuning R1 = 2(V
α(1−γ) R2 and R3 =
α(1+γ) R2
19
ensures that the schmitt trigger’s output goes from VDD to
Ė
−VDD at Ė
E = −γα and from −VDD to VDD at E = −α. Due
to the transistor arrangement in Hysteresis Block: 1) VC = 0
when Vsh = VDD . Therefore Vsh = VDD implies Rest Mode.
2) VC = VT when Vsh = −VDD . It will be explained next
that VT ∈ {−VDD , VDD }. Therefore Vsh = −VDD implies
Scan Mode. So we can conclude that the Hysteresis Block
Ė
= −γα and
goes from Rest Mode to Scan Mode when E
Ė
from Scan Mode to Rest Mode when E = −α. This is in
accordance with the hysteresis shown in Fig. 6a.
VT , the output of the Voltage Toggler block, toggles between
−VDD and VDD . Recalling equation (12), this will result in
the
memristive gain control block reflect between
gain of the
S
S
Rof
Ron
f
. We now explain the working of this block. Say
RI , RI
VT = VDD and the zone indicating voltages (refer Fig. 3)
VL1 = VL2 = VDD . As VL1 = VL2 = VDD , transistors TC2
and TC3 are OF F . The voltage V + = V2T = VDD
2 . Since
V + = VDD
>
0,
V
=
V
.
This
shows
that
the
output of
T
DD
2
Voltage Toggler block is stable. As VT = VDD , memristor’s
S
resistance M will decrease till M = Ron
(see equation (12))
at which point VL1 = −VDD and VL2 = VDD (refer Case 2
of III-D). TC3 will be momentarily ON making V + = −VDD
and hence driving VT to −VDD . Then M will increase from
S
Ron
, making VL1 = VL2 = VDD and hence driving TC3 to
+
=
OF F state. When this occurs V + = V2T = − VDD
2 . As V
VDD
− 2 < 0, VT = −VDD . Similar momentary transition of
TC2 to ON state will toggle VT from −VDD to VDD when
S
M = Rof
f.
Several plots corresponding the regulatory performance of
PPA under RGS control strategy is shown in Fig. 9d, e, f. It is
interesting to observe that an LTV system can have multiple
rest-scan cycle (see Fig. 9e). This is because for a time varying
system a stabilizing gain at a given instant may not be the
stabilizing gain at a later instant due to the change in system
dynamics. Unlike LTV system, a LTI system will have only 1
rest-scan cycle.
Remark 9: In this example T is very low which may seem
to challenge analog design. However for all practical purposes
it is not so. For the sake of simulation we choose a fictitious
time variation of κ (t) and ε (t) which is quite fast compared
to that found in nature. Therefore δA and δB is high (refer
Step 4) resulting in a high δ and hence a low scan time T
(refer inequality (29). In practice, time variation of a system
caused by ageing effect and atmospheric variation is a slow
process. Hence, T will be much higher.
Remark 10: To control an array of miniaturized devices (say
PPA) one can reduce the circuitry required by identifying the
components of the circuit which can be common for the entire
array. For example, Synchronization Block can be common
for the entire array. Synchronization of each pair of coupled
Memristor Gain Block and Integrator (refer Fig. 3) can be
done in a time multiplexed manner, i.e. each pair of coupled
Memristor Gain Block and Integrator is synchronized using
19 The
designer is free to choose the resistance R2 .
13
one Synchronization Block. The oscillator shown in the circuit
of Fig. 3 can also be common for the entire array.
In equation (40) δA = Ȧ (t∗ ) δt and δB = Ḃ (t∗ ) δt are
infinitesimal change in A and B respectively. Note that ∆K
is a scalar. Hence, substituting equation (39) in (40) yields
T
VI. D ISCUSSION
To the best of authors knowledge this paper is one of the first
attempts towards understanding the use of memristor in control
applications. A memristive variable gain architecture has been
proposed. We then propose (and prove) RGS control strategy
which can be implemented using this framework. Simplicity
of RGS control strategy is demonstrated using an example.
The extension of this work can take two course.
From Circuit Standpoint one may try to design an analog
circuit which mimics the circuit shown in Fig. 2 but with a
lesser number of op-amps. Since the synthesis of memristor
is still an engineering challenge, one may speculate regarding
the use of variable CMOS resistors (refer [21]) to implement
the analog gain controller proposed in Section III.
Two milestones have to be addressed before RGS is practically feasible: 1) RGS needs information about the states x
which is obtained by differentiating the output y N − 1 times.
But differentiation might amplify the noise. 2) RGS relies on
the knowledge of E which is obtained by performing xT P x
using analog circuitry. Such analog implementation will be
easier if P is sparse. Hence from Control Theoretic Standpoint,
addressing these two issues will be the first target of the
authors. Later point has been addressed in [38]. Extending
RGS to SISO non-linear and in general MIMO systems would
be the next step. It would also be interesting to explore other
simple control strategies (like [39]) which can be implemented
in analog framework.
A PPENDIX A
P ROOF OF L EMMA 1: D RIFTING NATURE OF S TABILIZING
G AIN S ET KP,s (t)
To prove Lemma 1 we will take the following steps:
1) Pick a gain K ∈ KP,s (t).
2) Prove that if δt → 0 then there exist a ∆K → 0 s.t.
(K + ∆K) ∈ KP,s (t + δt).
3) As ∆K → 0, (K + ∆K) ∈ KP,s (t). Hence
the gain K + ∆K belongs to both the sets,
KP,s (t) T and KP,s (t + δt). This implies that
KP,s (t) KP,s (t + δt) 6= ∅.
Now we proceed with the proof. We first pick a gain K ∈
KP,s (t). As KP,s (t) 6= ∅, ∀t ≥ 0 such a gain will exist. For
a time t = t∗ there exists a gain K ∗ ∈ KP,s (t∗ ) and a scalar
s∗ > s s.t. the following equality holds
T
(A∗ − B ∗ K ∗ C) P + P (A∗ − B ∗ K ∗ C) = −s∗ I
(39)
In equation (39) A∗ = A (t∗ ) and B ∗ = B (t∗ ). Equation
(38) directly follows from the very definition of stabilizing
gain set (defined in page 7). Lets say that at time t = t∗ + δt
there exist a K ∗ + ∆K s.t.
T
[(A∗ + δA) − (B ∗ + δB) (K ∗ + ∆K) C] P
+P [(A∗ + δA) − (B ∗ + δB) (K ∗ + ∆K) C] = −s∗ I
(40)
∆KR = (δA − δBK ∗ C) P + P (δA − δBK ∗ C)
(41)
T
where, R = C T (B ∗ + δB) P + P (B ∗ + δB) C. Hence if
∆K satisfies equation (41) then K ∗ + ∆K ∈ KP,s (t∗ + δt).
Now all we need to do is to prove that ∆K is infinitesimal,
i.e. ∆K → 0 if δA → 0 and δB → 0. Taking norm on both
side of equation (41) we get,
∆K kRk ≤
∆K
≤
2 kP k (kδAk + K ∗ kδBk kCk)
2 kP k (δA + K ∗ δB )
δt
kRk
(42)
Since kRk is finite it is obvious from inequality (42) that
∆K → 0 as δt → 0. This concludes the proof.
A PPENDIX B
G LOBAL S OLUTION OF BMI-EMP
Theorem 2 involves solving the following BMI-EMP optimization problem
OP1:
minimize: s
subject to:
T
(Ai − Bi Ki C) P + P (Ai − Bi Ki C) sI ∀ (Ai , Bi ) ∈ V
km ≤ Ki ≤ kM , i = 1, 2, . . . , m
P ≻0
We will first justify why OP1 is called BMI-EMP. Consider
a matrix inequality of type
T
(A − BKC) P + P (A − BKC) sI
(43)
Given a set of A, B, C, K and P , the least possible value
of s which will satisfy inequality (43) is indeed the largest
T
eigen value of the matrix (A − BKC) P + P (A − BKC).
So if we exclude the inequalities km ≤ Ki ≤ kM and P ≻ 0,
then OP1 can be equaly casted as
T
min max λM (Ai − Bi Ki C) P + P (Ai − Bi Ki C)
P, Ki (Ai , Bi )∈V
which is basically a Largest Eigenvalue Minimization Problem or just “EMP”. Now consider the function
T
Λ (P , K) = λM (A − BKC) P + P (A − BKC)
T
The matrix Q (P, K) := (A − BKC) P +P (A − BKC)
is Bilinear in the sense that it is linear in K if P is fixed and
linear in P if K is fixed. As Q ∈ S, the function Λ (P , K) =
λM (Q (P, K)) is convex in K if P is fixed and convex in P
if K is fixed.
We are interested in the global solution of BMI-EMP as a
smaller value s will ensure better convergence of the LTV/LTI
system. In the following we will provide a sketch of the work
done in [32], [34], [33] which will be just enough to design
an algorithm for global solution of BMI-EMP. However we
don’t provide detailed explanation of the algorithm for which
the reader may refer [32].
Before proceeding forward we would like to cast OP1 in a
form which can be handled by a numerical solver. Observe that
14
the third constrain of OP1 is a strict inequality which demands
that the Lyapunov Matrix P has to be positive definite (not
positive semi-definite). Such a strict inequality will impose
numerical challenge and hence we replace it with the nonstrict inequality P µp I where, 0 < µp ≪ 1. Without any
loss of generality: 1) We constrain the kP k ≤ 1 by imposing
the constrain P I. 2) We normalize the RGS gain set. We
get the following optimization problem,
OP2:
minimize: s
subject to:
T
ATi P +P Ai −(Bi C) Ki P −Ki P (Bi C) sI ∀ (Ai , Bi ) ∈ V
µk ≤ Ki ≤ 1, i = 1, 2, . . . , m
µp I P I
km
In the above
problem, µk = kM < 1. We also redefine
C as C := kM · · · 0 0 , to neutralize the effect of
normalizing RGS gain set.
T
We now define two vectors: P = p1 p2 · · · pnp
containing the np = N (N2+1) distinct elements of symmetric
T
matrix P and K = K1 K2 · · · Km
the m normalized RGS Gains of OP2. We also define two sets XP and XK
as follows
n
m
XP := [−1, 1] p ; XK := [µk , 1]
Note that XP is a np dimensional unit hypercube such that20
P ∈ XP and XK is a m dimensional hyper-rectangle such that
K ∈ XK . We also define smaller hyper-rectangle’s QP ⊆ XP ,
QK ⊆ XK and Q ⊆ XP × XK as follows
n
n
QP := L1P , UP1 × L2P , UP2 × . . . × LPp , UP p
2
m
2
1
× . . . × [Lm
× LK , U K
QK := L1K , UK
K , UK ]
Q := QP × QK
i
Obviously −1 ≤ LiP ≤ UPi ≤ 1 and µk ≤ LiK ≤ UK
≤ 1.
Consider the following “constrained version” of OP2 where
(P , K) is only defined in the small hyper-rectangle Q.
OP3:
minimize: s
subject to:
T
ATi P +P Ai −(Bi C) Ki P −Ki P (Bi C) sI ∀ (Ai , Bi ) ∈ V
µk ≤ Ki ≤ 1, i = 1, 2, . . . , m
µp I P I
(P , K) ∈ Q
The input to OP3 is the set Q and its output is s∗ (Q) which
is a function of Q. We want to bound s∗ (Q) by an upper and
a lower bound as follows:
ΦL (Q) ≤ s∗ (Q) ≤ ΦU (Q)
(44)
The convex relaxation technique introduced in [33] (also
discussed in [34], equation (9)) has been used to get the
lower bound ΦL (Q). We replace the nonlinearity Ki P
with a new matrix Wi . As Wi is a symmetric matrix matrix of order N we can represent
it by a vecT
w1i w2i · · · wnp i
containing the np
tor Wi =
20 All the element of the Lyapunov Matrix P will be in the range [−1, 1]
as P I according to OP2.
Algorithm 1 Alternating SDP Method
1. Set K(0) =Centroid
of QK . s(0) , P(0) = OP3 Q, K(0) .
2. if
s(0) = ∞
3.
return ∞.
4. else
5.
Set δ > 0 and k = 0.
6.
do {
7.
s(k+1) , P(k+1) = OP3 Q , K(k)
8.
s(k+1) , K(k+1) = OP3 Q , P(k+1)
9.
k = k + 1.
10.
} while s(k−1) − s(k) < δ s(k)
11.
return s(k) .
12. end
elements of Wi . We
T now define a matrix W =
distinct
T
W1T W2T · · · Wm
. If OP3 is expanded in terms
of pj and Ki then the element wji of W is constrained by
the equality wji = Ki pj . Rather than imposing this equality
constrain we let wji to be a free variable which can take any
value in the set W (Q) defined as
(P , K) ∈ Q
wji ≥ LiK pj + LjP Ki − LiK LjP
i
i
pj + UPj Ki − UK
UPj
W (Q) := W wji ≥ UK
i
i
LjP
wji ≤ UK
pj + LjP Ki − UK
j
j
i
i
wji ≤ LK pj + UP Ki − LK UP
By performing the convex relaxation stated above we get
the following optimization problem.
OP4:
minimize: s
subject to:
T
ATi P + P Ai − (Bi C) Wi − Wi (Bi C) sI ∀ (Ai , Bi ) ∈ V
µp I P I
µp Ki Iµk Wi Ki I, i = 1, 2, . . . , m
(P , K) ∈ Q
W ∈ W (Q)
The input to OP4 is the set Q and its output is ΦL (Q).
As OP4 is a relaxed version of OP3, ΦL (Q) ≤ s∗ (Q). Note
that OP4 is a convex optimization problem, more specifically
a Semi-Definite Program(SDP) which can be solved by numerical solvers like CVX[40].
We now concentrate on defining the upper bound ΦU (Q).
Any local minima of OP3 can indeed be the upper bound
ΦU (Q). We use the Alternating SDP Method discussed in
[33], [41] . Alternating SDP method relies on the Bi-Convex
nature of OP3, i.e. OP3 becomes a convex problem (more
specifically SDP) in P with K fixed or a convex problem
in K with P fixed. Alternating SDP Method is summarized
in Algorithm 1. We represent by OP3 (Q , K′ ) the opti′
mization problem obtained by fixing K = K in OP3 and
′
OP3 (Q , P ) the optimization problem obtained by fixing
′
P = P in OP3. The input to OP3 (Q , K′ ) is the small
′
hyper-rectangle Q and the fixed RGS gain K while the input
′
to OP3 (Q , P ) is the small hyper-rectangle Q and the fixed
′
Lyapunov Matrix P . The outputs of OP3 (Q , K′ ) are the
optimized s and P while the outputs of OP3 (Q , P′ ) are the
optimized s and K.
15
Algorithm 2 Branch and Bound
1. Set ǫ > 0 and k = 0.
2. Set Q0 = XP × XK and G0 = {Q0 }.
3. Set L0 = ΦL (Q0 ) and U0 = ΦU (Q0 ).
4. while (Uk − Lk < ǫ)
5.
Select Q̄ from Gk such that Lk = ΦL Q̄ .
6.
Set Gk+1 = Gk − Q̄ .
7.
Split Q̄ along its longest egde into Q̄1 and Q̄2 .
8.
f or (i = 1, 2)
9.
if
ΦL Q̄i ≤ Uk
10.
Compute ΦU Q̄
Si .
Q̄i .
11.
Set Gk+1 = Gk
12.
end
13. end
14. Set Uk+1 = min ΦU (Q).
15.
16.
Q∈Gk+1
P runing : Gk+1 = Gk+1 − {Q : ΦL (Q) > Uk+1 }.
Set Lk+1 = min ΦL (Q).
Q∈Gk+1
17. Set k = k + 1.
18. end
Under the various definations introduced above the Branch
and Bound Algorithm [32] calculate the global minima of
OP2 to an absolute accuracy of ǫ > 0 within finite time.
The psuedocode of Branch and Bound method is given in
Algorithm 2.
A PPENDIX C
C ONTROL T HEORETIC D EFINITIONS AND C ONCEPTS
The control theoretic analysis presented in this paper relies
on definitions and theorems from three broad areas. This
concepts are standard and can be easily found in books like
[42], [36].
A. Real Analysis
Defintion 1 (Cartesian Product of Sets): Cartesian Products
of two sets A and B, denoted by A × B, is defined as the set
of all ordered pairs (a, b) where a ∈ A and b ∈ B.
Notion 1 (Connected Set): A set is said to be connected if
for any two points on that set, there exist at-least one path
joining those two points which also lies on the set. Note that
this is not the "general definition" of connected set.
Notion 2 (Compact Set): In Eucledian Space Rn , a closed
and bounded set is called a compact set. Also a compact set
in Rn is always closed and bounded. Note that this is not the
"general definition" of compact set.
B. Linear Algebra
Definition 2 (Eucledian Norm of a Vector): For a √vector
x ∈ Rn , eucledian norm kxk is defined as kxk := xT x.
Throughout the entire paper “norm” means “eucledian norm”
unless mentioned otherwise.
Definition 3 (Induced Spectral Norm of a Matrix): For a
matrix A ∈ Rm×n , Induced Spectral Norm kAk is defined as
kAk :=
kAxk
x∈Rn −{0} kxk
sup
It can equally be defined as
kAk := sup kAxk
kxk=1
Definition 4 (Positive (Negative) Definite (Semi-Definite)
Matrix): A square matrix A ∈ Rn×n is said to be positive
definite if xT Ax > 0, ∀ x ∈ Rn −{0} and is said to be positive
semi-definite if xT Ax ≥ 0, ∀ x ∈ Rn . A matrix A is said to
be negative definite is −A is positive definite and is said to
be negative semi-definite is −A is positive semi-definite.
Linear Algebra Theorems:
1) Properties of norms:
a) For a vector x ∈ Rn , if kxk = 0 then x = 0. Also
if kxk → 0 then x → 0.
b) For any two matrix A, B ∈ Rn×m , kA + Bk ≤
kAk + kBk.
c) For any matrix A ∈ Rn×m and a scalar α, kαAk =
α kAk.
d) For any two matrix A, B ∈ Rn×m , kABk ≤
kAk kBk.
e) For any matrix A ∈ Rn×m and a vector x ∈ Rm ,
kAxk ≤ kAk kxk.
2) Eigenvalues of symmetric positive (negative) definite
matrix are positive (negative).
3) For any symmetric matrix A ∈ Rn×n and a vector x ∈
Rn ,
2
λm (A) kxk ≤ xT Ax ≤ λM (A) kxk
2
4) For any symmetric positive definite (semi-definite) matrix A, kAk = λM (A).
2
5) For any square matrix A, xT Ax ≤ kAk kxk
C. Convex Analysis
Definition 5 (Convex Set): A set A is said to be convex if
for any x , y ∈ A, θx + (1 − θ) y ∈ A , ∀ θ ∈ [0 , 1].
Definition 6 (Convex Function): Let A ∈ Rn be a convex
set. A function f : A → R is convex if
f (θx + (1 − θ) y) ≤ θf (x) + (1 − θ) f (y)
for all x , y ∈ A and for all 0 ≤ θ ≤ 1.
Definition
7 (Convex Combination and Convex Hull): Given
a set A = a1 a2 · · · an , its convex combination are
those elements which can be expressed as
θ1 a1 + θ2 a 2 + · · · + θn an
where θ1 + θ2 + · · · + θn = 1 and θi ≥ 0, i = 1, 2, . . . , n.
The set of all convex combination of set A is called the
convex hull of A. Convex Hull of set A is indeed the smallest
convex set containing A.
Definition 8 (Semi-Definite Program): A semi-definite program
or SDP is an optimization problem in variable x =
T
x1 x2 · · · xn ∈ Rn with the generic structure
minimize : cT x
subject to :
F0 + x1 F1 + x2 F2 + · · · + xn Fn 0
Ax = b
where F0 , F1 , F2 , . . . , Fn ∈ S, c ∈ Rn , A ∈ Rp×n and
b ∈ Rp .
16
ACKNOWLEDGMENT
We would like to thank Prof. Radha Krishna Ganti for providing invaluable help in areas related to convex optimization.
R EFERENCES
[1] L. Chua, “Memristor-the missing circuit element,” IEEE Trans. Circuit
Theory, vol. 18, no. 5, pp. 507–519, 1971.
[2] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The
missing memristor found,” Nature, vol. 453, no. 7191, pp. 80–83, 2008.
[3] Y. Ho, G. M. Huang, and P. Li, “Dynamical properties and design
analysis for nonvolatile memristor memories,” IEEE Trans. Circuits Syst.
I, Reg. Papers, vol. 58, no. 4, pp. 724–736, 2011.
[4] Y. N. Joglekar and S. J. Wolf, “The elusive memristor: properties of basic
electrical circuits,” Eur. J. Phys., vol. 30, no. 4, pp. 661–675, 2009.
[5] F. Corinto and A. Ascoli, “A boundary condition-based approach to the
modeling of memristor nanostructures,” IEEE Trans. Circuits Syst. I,
Reg. Papers, vol. 60, pp. 2713–2726, 2012.
[6] S. Kvatinsky, E. G. Friedman, A. Kolodny, and U. C. Weiser, “Team:
Threshold adaptive memristor model,” IEEE Trans. Circuits Syst. I, Reg.
Papers, vol. 60, no. 1, pp. 211–221, 2013.
[7] S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu,
“Nanoscale memristor device as synapse in neuromorphic systems,”
Nano letters, vol. 10, no. 4, pp. 1297–1301, 2010.
[8] Y. V. Pershin and M. Di Ventra, “Experimental demonstration of
associative memory with memristive neural networks,” Neural Networks,
vol. 23, no. 7, pp. 881–886, 2010.
[9] A. Sheri, H. Hwang, M. Jeon, and B. Lee, “Neuromorphic character
recognition system with two pcmo-memristors as a synapse,” IEEE
Trans. Ind. Electron., vol. 61, pp. 2933–2941, 2014.
[10] Y. V. Pershin, S. La Fontaine, and M. Di Ventra, “Memristive model of
amoeba learning,” Phys. Rev. E, vol. 80, no. 2, p. 021926, 2009.
[11] G. Z. Cohen, Y. V. Pershin, and M. Di Ventra, “Second and higher
harmonics generation with memristive systems,” Appl. Phys. Lett., vol.
100, no. 13, p. 133109, 2012.
[12] Y. V. Pershin and M. Di Ventra, “Practical approach to programmable
analog circuits with memristors,” IEEE Trans. Circuits Syst. I, Reg.
Papers, vol. 57, no. 8, pp. 1857–1864, 2010.
[13] S. Shin, K. Kim, and S. Kang, “Memristor applications for programmable analog ics,” IEEE Trans. Nanotechnol., vol. 10, no. 2, pp.
266–274, 2011.
[14] D. Jeltsema and A. Doria-Cerezo, “Port-hamiltonian formulation of
systems with memory,” Proc. IEEE, vol. 100, pp. 1928–1937, 2012.
[15] D. Jeltsema and A. J. van der Schaft, “Memristive port-hamiltonian
systems,” Math. Comput. Model. Dyn. Syst., vol. 16, pp. 75–93, 2010.
[16] J. Hu and J. Wang, “Global uniform asymptotic stability of memristorbased recurrent neural networks with time delays,” in Proc. Int. Joint
Conf. Neural Netw., 2010, pp. 1–8.
[17] A. Delgado, “The memristor as controller,” in IEEE Nanotechnology
Materials and Devices Conference, 2010, pp. 376–379.
[18] J. S. A. Doria-Cerezo, L. van der Heijden, “Memristive port-hamiltonian
control: Path-dependent damping injection in control of mechanical
systems,” in Proc. 4th IFAC Workshop on Lagrangian and Hamiltonian
Methods for Non Linear Control, 2012, pp. 167–172.
[19] R. Pasumarthy, G. Saha, F. Kazi, and N. Singh, “Energy and power
based perspective of memristive controllers,” in Proc. IEEE Conf. Decis.
Contr., 2013, pp. 642–647.
[20] J. J. Gorman and B. Shapiro, Feedback control of mems to atoms.
Springer, 2011.
[21] E. Ozalevli and P. E. Hasler, “Tunable highly linear floating-gate
cmos resistor using common-mode linearization technique,” IEEE Trans.
Circuits Syst. I, Reg. Papers, vol. 55, pp. 999–1010, 2008.
[22] L. O. Chua and S. M. Kang, “Memristive devices and systems,” Proc.
IEEE, vol. 64, no. 2, pp. 209–223, 1976.
[23] T. A. Wey and W. D. Jemison, “Variable gain amplifier circuit using
titanium dioxide memristors,” IET Circuits, Devices & Syst., vol. 5,
no. 1, pp. 59–65, 2011.
[24] S. Haykin, Communication systems, 5th ed. Wiley Publishing, 2009.
[25] S. P. Boyd, Linear matrix inequalities in system and control theory.
SIAM, 1994.
[26] A. Ben-Tal and A. Nemirovski, Lectures on modern convex optimization:
analysis, algorithms, and engineering applications. SIAM, 2001.
[27] H. H. Rosenbrook, “The stability of linear time-dependent control
systems,” Int. J. Electron. & Contr., vol. 15, pp. 73–80, 1963.
[28] V. Solo, “On the stability of slowly time-varying linear systems,” Math.
of Contr., Signals & Syst., vol. 7, pp. 331–350, 1994.
[29] C. B. Barber, D. P. Dobkin, and H. Huhdanpaa, “The quickhull algorithm
for convex hulls,” ACM Trans. on Mathematical Software, vol. 22,
no. 4, pp. 469–483, 1996. [Online]. Available: http://www.qhull.org
[30] A. Hassibi, J. How, and S. Boyd, “A path-following method for solving
bmi problems in control,” in Proc. Amer. Contr. Conf., 1999, pp. 1385–
1389.
[31] Y.-Y. Cao, J. Lam, and Y.-X. Sun, “Static output feedback stabilization:
an ilmi approach,” Automatica, vol. 34, no. 12, pp. 1641–1645, 1998.
[32] K.-C. Goh, M. Safonov, and G. Papavassilopoulos, “A global optimization approach for the bmi problem,” in Proc. IEEE Conf. Decis. Contr,
vol. 3, 1994, pp. 2009–2014.
[33] K. H. H. Fujioka, “Bounds for the bmi eingenvalue problem - a good
lower bound and a cheap upper bound,” Trans. Society of Instr. & Contr.
Eng., vol. 33, pp. 616–621, 1997.
[34] M. Michihiro Kawanishi and Y. Shibata, “Bmi global optimization using
parallel branch and bound method with a novel branching method,” in
Proc. Amer. Contr. Conf., 2007, pp. 1664–1669.
[35] K. Ogata, Modern Control Engineering, 5th ed. Prentice Hall, 2010.
[36] S. Boyd and L. Vandenberghe, Convex optimization.
Cambridge
university press, 2009.
[37] R. T. Rockafellar, Convex analysis. Princeton university press, 1997.
[38] A. Hassibi, J. How, and S. Boyd, “Low-authority controller design via
convex optimization,” in Proc. IEEE Conf. Decis. Contr., 1998, pp.
1385–1389.
[39] I. Barkana, “Simple adaptive control-a stable direct model reference
adaptive control methodology-brief survey,” Int. J. Adapt. Contr. Signal
Proc., 2013.
[40] I. CVX Research, “CVX: Matlab software for disciplined convex
programming, version 2.0,” http://cvxr.com/cvx, Aug. 2012.
[41] M. K. Mituhiro Fukuda, “Branch-and-cut algorithms for the bilinear
matrix inequality eigenvalue problem,” Comput. Optim. Appl, vol. 19,
p. 2001, 1999.
[42] E. Kreyszig, Introductory functional analysis with applications. Wiley,
1989.
Gourav Saha received the B.E. degree from Anna
University, Chennai, India, in 2012. Since 2013, he
has been working towards his M.S. (by research)
degree in the Department of Electrical Engineering
at Indian Institute of Technology, Madras.
His current research interests include application
of memristor and memristive systems, control of
MEMS and modelling and control of cyber-physical
systems with specific focus on cloud computing.
Ramkrishna Pasumarthy obtained his PhD in Systems and Control from the University of Twente, The
Netherlands in 2006. He is currently an Assistant
Professor at the Department of Electrical Engineering, IIT Madras, India.
His research interests lie in the area of modeling
and control of physical systems, infinite dimensional
systems and control of computing systems, with
specific focus on cloud computing systems.
Prathamesh Khatavkar received the B.Tech degree
from University of Pune, India, in 2012. He is
currently pursuing his M.S. (by research) degree in
the Department of Electrical Engineering at Indian
Institute of Technology, Madras.
His current research interests includes Analog/RF
IC design.