Academia.edu no longer supports Internet Explorer.
To browse Academia.edu and the wider internet faster and more securely, please take a few seconds to upgrade your browser.
…
25 pages
1 file
Initially both semiconductors are totally neutral. The concentration of positive and negative carriers are quite different on opposite sides of the junction and the thermal energy-powered diffusion of positive carriers into the N-type material and negative carriers into the P-type material occurs. The N-type material acquires an excess of positive charge near the junction and the P-type material acquires an excess of negative charge. Eventually diffuse charges build up and an electric field is created which drives the minority charges and eventually equilibrium is reached. A region develops at the junction called the depletion region. This region is essentially un-doped or just intrinsic silicon. To complete the diode conductor, leads are placed at the ends of the PN junction.
ELECTRIC CURRENTS IN A P-N DIODE, 2018
The objective of this work is to study the influence of the junction region on the electron and hole currents of a p-n diode. These currents are calculated separately for the junction region and for the neutral regions on the basis of the diffusion theory. Then they are matched at the borders of the junction region giving thus modified expressions for their densities as compared to the classical theory of a p-n diode. Furthermore, the displacement of the pseudo-Fermi levels of the minority carriers at the borders of the junction are not equal to the external aplied potential. It is proved that these modifications can alter significantly the currents of a p-n diode in some particular cases, where the diffusion length of electrons and holes are very short, e.g. the diodes based on CdTe. It is proved that the influence of the junction can reduce significantly the diode dark current, affecting thus positively the conversion efficiency of a solar cell. In some particular cases, when one side of the diode is heavily doped and the diffusion length of the minority carriers is vanishing, the expresion for the diode current become identical with that given by S: M: Sze for the Schottky diode, even if it is calculated on the basis of the diffusion theory of currents.
In this paper, we have explained the characteristics of semiconductors diodes and its application have influenced the universe beyond anything before they might have thought. While the communications and processing records have been nonetheless essential via the humans, thanks to the semiconductors all vital duties have been conveniently accomplished and infinitely less time has been needed than, for example, during vacuum tubes. The Semiconductor diode that is made from a small piece of semiconductor material, usually silicon, in which half is doped as a p region and half is doped as an n region with a p-n junction and depletion region in between. In order to review the semiconductor diode, we used unbiased, forwardbiased and reverse biased methods. In unbiased condition the external voltage does not apply on the p-n Junction, In forward bias the P-region of the diode is connected with the positive terminal of the battery and N-region is connected with the negative region. While in the reverse bias, the P-type region is connected to negative voltage and N-type is connected to the positive terminal The building blocks of the entire electronics and computing sectors are semi-conductive substances. Without included circuits (chips) which consist of semiconductor substances, compact, lightweight, excessive velocity and coffee-energy gadgets might no longer be possible. This essay explores the general records, description and impact of semiconductors on semiconductors. Statistics on the effects of temperature on mosfet band difference, carrier density, mobility, provider diffusion and speed saturation, contemporary density, threshold voltage, leakage cutting-edge and interconnection resistance are given below. We also provide the applications of semiconductor materials in different sectors of modern electronics and communications.
In the previous tutorial we saw how to make an N-type semiconductor material by doping a silicon atom with small amounts of Antimony and also how to make a P-type semiconductor material by doping another silicon atom with Boron. This is all well and good, but these newly doped N-type and P-type semiconductor materials do very little on their own as they are electrically neutral. However, if we join (or fuse) these two semiconductor materials together they behave in a very different way merging together and producing what is generally known as a " PN Junction ". When the N-type semiconductor and P-type semiconductor materials are first joined together a very large density gradient exists between both sides of the PN junction. The result is that some of the free electrons from the donor impurity atoms begin to migrate across this newly formed junction to fill up the holes in the P-type material producing negative ions. However, because the electrons have moved across the PN junction from the N-type silicon to the P-type silicon, they leave behind positively charged donor ions (ND) on the negative side and now the holes from the acceptor impurity migrate across the junction in the opposite direction into the region where there are large numbers of free electrons. Related Products: PIN | Varactor As a result, the charge density of the P-type along the junction is filled with negatively charged acceptor ions (NA), and the charge density of the N-type along the junction becomes positive. This charge transfer of electrons and holes across the PN junction is known as diffusion. The width of these P and N layers depends on how heavily each side is doped with acceptor density NA, and donor density ND, respectively.
What makes a difference between the usual P/N semiconductor diode and the power diode? The response is basically: the need to withstand high voltages in the reverse bias condition; this need will pose some constraints on the device structure.
Short theoretical background. Diode [0] is a two-terminal electronic component that conducts electric current in one direction (from positive (p) to negative (n) terminal) and blocks it the opposite direction. Semiconductor diodes (represented physically by a p-n junction) are most common type of contemporary diodes. They are widely used as a rectifiers, stabilitrons, voltage-dependent capacitors etc. Special modifications of semiconductor diodes are used as solar cells, photodiodes, light emitting diodes (LEDs) and laser diodes.
Estudos Arqueológicos de Oeiras, 32: 9-42, 2023
Critical Arts, 2024
Contributions to the Essay Contest Zur Kultivierung des Nichtwissens als komplementäres Wissen in den Wissenschaften, 2024
Crime Amp Delinquency, 2011
Süleyman demirel üniversitesi hukuk fakültesi dergisi, 2023
Facta Universitatis, Series: Philosophy, Sociology, Psychology and History, 2017
Neuro endocrinology letters, 2005
Revue économique, 2014
The European health psychologist, 2015
JEMMA (Journal of Economic, Management and Accounting)
Journal of Physics: Conference Series, 2014
Research in Physical Education, Sport and Health, 2020
Bulletin of the American Physical Society, 2014
Language, Cognition and Neuroscience, 2017
Construction Economics and Building, 2014
British Journal of Political Science, 2013