Post-irradiation behavior of commercial power VDMOSFETs

This paper presents results of a study of post-irradiation behavior of commercial n-channel power VDMOSFETs. Gamma-ray irradiated transistors have been subjected to the series of isothermal and isochronal annealings. The response of EFL1N10 devices, manufactured by domestic vendor, Ei-Microelectronics, is compared to that of Intersil's IRF510 devices. It has been found that during isothermal annealing EFL1N10 devices exhibit the so called latent interface-trap buildup (LITB), while such phenomenon hasn't been observed in IRF510. Additional switching temperature annealing and switching bias annealing experiments performed on EFL1N10 may prove useful in revealing details of LITB