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1998, International Journal of Quantum Chemistry
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10 pages
1 file
The electronic structure of the 001 and 110 ␣-alumina surfaces was Ž. determined by periodic Hartree᎐Fock method in statically relaxed geometries. Both 001 Ž. and 110 surfaces generate specific surface states into the energy gap. Significant influence of charge-transfer effect on the surface᎐adsorbate potential is possible in both cases studied. The inclusion of the exponential part to the standard potential forms was suggested for the description of the interaction potential in such cases.
Physical review, 1994
Using a tight-binding, total-energy model, we predict the atomic and electronic structure of the relaxed (1X1) corundum (0001) surface. The surface shows a large, bond-length-conserving relaxation, which is allowed by the topology of the surface. The relaxation is driven by a rehybridization of the surface Al atoms to sp, and an accompanying drop in the energy of occupied surface states, during the re-0 laxation. Displacements of surface atoms from bulk positions are as large as 0.7 A, and should be observable using a low-energy electron difFraction intensity analysis. Full relaxed atomic positions are reported, as well as a wavelength-resolved surface band structure, including orbital characters of surface states.
Applied Surface Science, 2008
Electronic and atomic structure of low index polar (0 0 1, 0 1 1, 1 1 1) spinel g-alumina surfaces have been investigated using a modified largescale quantum semi-empirical simulations. Atomic structure optimization and electronic structure calculation were done in the direct space on periodic large unit cells in which random distribution of cationic vacancies close to the surface were included. Predicted electronic structures match more accurate ab initio Density Functional Theory (DFT) results on aluminum oxides. We found that the restructured surfaces behave as amorphous-like shapeless planes provided unit cell dimensions are much greater than primitive translations as periodicity constraints are weakened. Aluminum ions vacancies in the surface region are shown to induce a surface atomic disordering even at 0 K, correlated with the appearance of low coordinated ions, as proven experimentally and theoretically with classical Molecular Dynamics (MD) calculation on some aluminum oxide systems. The lowering of the surface charge density is obtained from two distinct mechanisms involving large ion movements. On the oxygen rich plane termination, this results from the formation of O 2 dÀ entities. On the aluminum rich plane termination, the same effect is related to a loss of coordination number together with a reduction of cationic charge. Furthermore, large-scale simulations allow to statistically quantify specific relaxed surface ion densities for which the Local Density of States (LDOS) is evaluated. Their inferred electronic properties are then compared to available probe molecule adsorption experiments investigated by infrared spectroscopy. We show that surface electronic states are not a simple function of ion coordination. Our large-scale quantum semi-empirical calculation fills the gap between atomic structures predicted by classical MD approach with electronic structure results obtained by DFT on small systems.
The Journal of Physical Chemistry, 1994
The structure and bonding in 8-A1203 has been investigated at the ab initio level with the periodic Hartree-Fock method. The structure optimization reported is in very good agreement with the available crystallographic data. The energy of &A1203 is found to be 42 kJ mol-' higher than that of a-alumina. The bonding in 8-A1203 is discussed from the electron density and electron localization (ELF) functions. The structure is found to be ionic; the main differences between tetrahedral and octahedral sites are due to the polarization of the oxygen dianion. Estimates of cationic radii for tetracoordinated and hexacoordinated A1 are found to be in good agreement with the recent compilation of Feth et al.
Surface and Interface Analysis, 2017
We have studied the evolution of surface basicity as a function of calcination temperature in a range of transition alumina-rich analogues of metallurgical grade aluminas produced by calcination of Bayer gibbsite. Specific basicity, the number of basic sites per unit surface area, was determined by thermometric back-titration and found to increase with calcination temperature up tõ 700°C to 800°C, decreasing dramatically thereafter. The population of tetrahedrally coordinated Al 3+ , which exhibits a qualitatively similar evolution, was determined by Al K-edge near-edge X-ray absorption fine structure (NEXAFS) spectroscopy but found not to correlate with basicity changes. Interestingly, a shift to higher and then lower binding energy of Al 2p photoelectrons by Xray photoelectron spectroscopy and changes in the intensity of O K-edge NEXAFS spectra do appear to correlate with surface basicity. Exploiting the differing surface sensitivities of NEXAFS spectra collected in partial electron and total fluorescence yield modes, we find O K-edge spectra intensities, Al 2p X-ray photoelectron spectrometer binding energies, and surface basicity all reflect the reorganisation of internal surfaces rather than changes in AlO 4 :AlO 6 occupation.
Physical Review B, 2003
First-principles calculations are performed on the stable ␣-Al 2 O 3 and metastable-Al 2 O 3 phases to understand the stability and bonding of the flexible alumina surfaces. The ͑001͒ and (001) surfaces of-Al 2 O 3 are investigated and compared to ␣-Al 2 O 3 (0001). A needed extension of the original formulation of the Tasker's rule for the stability of low-symmetry ion-crystal surfaces is found. Also, use of extended Pauling's rules makes the results applicable to other metastable alumina phases. The most stable termination of (001)/(001) is found to be in the middle of an Al layer, similarly to ␣-Al 2 O 3 (0001). This surface is shown to be nonpolar, even though a Tasker point-charge description implies a polar classification. The asymmetry in atomic and electronic structures introduced by the tetrahedrally coordinated Al (Al T) ions is found to have important consequences for the surface properties. The bulk cation-vacancy lines caused by the Al T make the (001)/(001) surfaces more open than ␣(0001), thus allowing a huge inward relaxation (Ϫ117%) at (001), making this surface O terminated. The charge asymmetry in bulk-Al 2 O 3 causes an excess of electrons at (001), yielding a one-dimensional metallic surface state. Also, the presence of Al T in the near-surface layer is found to be destabilizing.
Journal of the American Ceramic Society, 1991
provide unique and useful information.
The Journal of Physical Chemistry B, 2006
We have studied surface hydroxyls adsorbed onto (001), (011), and (111) γ alumina surfaces using a quantumchemistry approach in order to compare with empirical models proposed in the literature. Local electronic structures and geometries in the low OH coverage limit have been evaluated for both ideal and relaxed surfaces with the help of a large scale periodic quantum-chemical code. Hydroxyl groups are adsorbed onto surfaces, and a study of their local electronic structure, vibrational frequencies, charges, and adsorption energies is performed and analyzed as a function of their adsorption site geometry. Our results show that, even on ideal (nonrelaxed) surfaces, OH local environments are more complicated than those stated by empirical models and strongly influence the hydroxyl stretching vibrational mode. Large scale simulation shows that disorder takes place even at 0 K, and the analysis of the vibrational frequencies leads to a revision of Knözinger's empirical model. Cationic vacancies in the first surface layers have also been taken into account; they have a significant influence on the surface atomic and electronic structures, modifying the physical properties of adsorbed OH entities. This work emphasizes the necessity to perform an electronic structure calculation to better understand adsorbed OH properties on γ alumina surfaces and reveals the difficulty to make a oneto-one correspondence between OH stretching frequencies and their other physical properties. Finally, we show that these results agree with some available experimental studies.
Ultramicroscopy, 1987
Atomic-resolution electron microscopic images cf ruby show (0001) polar surface facets developing under electron irradiation. A ttempts...~. to understand the "dark-line'" c~mtrasts associated with the surface atom profiles, following comparison of the experimental images w~.th computer modelling, leads to the realization that aluminium atom and, xygen atom surface terminations may be distinguished. Hence surface polarity, as well as details of surface step structure and mobility, may be determined. Positive surface polarity is preferred.
Physica B: Condensed Matter, 2012
In this work we performed an ab initio/Density Functional Theory (DFT) study of structural and electronic properties of the (0 0 1) a-Al 2 O 3 surface. For this study we used two methods with different basis set: the Full-Potential Augmented Plane Wave plus local orbital (FP-APW þ lo) and a linear combination of numerical localized atomic orbital basis sets, employing the WIEN2k code and the SIESTA code, respectively. In order to calculate the structural and electronic properties of the reconstructed surface, we calculated the final equilibrium atomic position with the SIESTA code and then the electric-field gradient (EFG) at Al sites was calculated with the FP-APW þlo code using the optimized positions. Using this procedure we found equilibrium structures with comparative lower energy than those obtained using only the FP-APW þlo method. The EFG tensor and the local structure for Al were studied as a function of the depth from the surface for the relaxed structures. We found that distances down to 6Å from the surface are sufficient to converge the EFG and the Al-O distances to bulk values. The predicted bulk EFG at the Al site is in good agreement with available experimental values. These results can be used for local probes purposes, e.g., in the case of doping, with important sensitivity for probes located close to the top of the surface, in particular for distances smaller than 6Å.
Introduction n extraordinary interest in understanding of
At he surface electron structure of alumina is motivated by the wide application of Al O , rang- 2 3 ing from catalysis to microelectronics including materials science.
The strategic, long-term goals of our project are Ž . specifically i to find physically justified model Ž potential between the adsorbed particle molecule, . ion and the alumina surface. The potential should include all types of particle᎐surface interactions and should provide an estimate of the possibility Ž . of chemisorption. ii To find physically well-justified types of cluster models for description of localized chemisorption.
To reach a reasonable description of the surface Ž . potential acting on an adsorbate molecule ion , the atomar and electron structure of both objects should be known. Concerning the ␣-alumina surface, we will take its atomar structure from known w x experimental data 1 modified by inclusion of the effect of relaxation of the surface layers of atoms. The electron structure of alumina surface must be described by means of quantum chemistry. The quality and the occurrence or nonoccurrence of the specific, localized surface states, which could be a source of chemisorption or noncovalent strong in-Ž teractions e.g., hydrogen bonding, charge-transfer . complexes between the surface and the adsorbate, will then serve as a guide for construction of a potential function, specific for the surface considered.
Method
Two surfaces of ␣-alumina were used for the Ž . Ž . present study: the 001 surface and 110 surface. These surfaces belong to the most stable surfaces with the most frequent occurrence at the crys-Ž talline corundum. Theoretical studies both quanw x w tum chemical 2᎐5 and atomistic simulations 6,
x. 7 are in accordance with these facts, and they predict large relaxation effects on these surfaces. Both methods, quantum chemical calculations and Ž . atomistic potential simulations, predict the 001 Ž . surface terminated with Al atoms and the 110 surface terminated with O atoms.
For modeling of the surfaces two-dimensional slab models were used. To construct the slab, the Ž proper primitive cell having the thickness of the . slab was periodically replicated in two dimen-Ž . sions. The 001 surface was modeled using six atomic layers, with the layer ordering Al ᎐O ᎐ 1 3 Al ᎐Al ᎐O ᎐Al , thus making a total of 10 atoms
per primitive cell. In this notation the atomic symbol labeling the layer is followed by the number of atoms contributing from the respective layer to the Ž . primitive cell. The 110 surface was modeled using a ten-layer slab O ᎐O ᎐Al ᎐O ᎐O ᎐O ᎐O ᎐ Al ᎐O ᎐O with 20 atoms per cell.
2 1
Because of the importance of the relaxation of w x the surface atom layers 2, 3, 6, 7 and the possible influence of the relaxation on the specific surface w x states 8 , the static relaxation of the studied surfaces was also taken into account. In the case of Ž . 001 surface, only relaxation of the top surface Al Ž . atoms was considered. For the 110 surface, both the first and the second surface layer of oxygen Ž . atoms were allowed to relax. Both the 001 and Ž . 110 surfaces were relaxed using two different potentials. The Coulomb terms were not taken into account in this case. The parameters of the Lennard-Jones potential were optimized to reproduce the enthalpy of formation and the experimental geomew x w x try of the ␣-alumina. GULP 9 and WMIN 10 programs were used for this study. The relaxation Ž . of 001 slab was also studied using quantum chemical calculation at Hartree᎐Fock level with STO-3G basis set.
The calculations of electron structure for the bulk ␣-Al O , and for both, unrelaxed and relaxed 2 3 Ž .
Ž . 001 and 110 slabs were performed by the periodic Hartree᎐Fock method, using the CRYSTAL95 w x program 11 . The computations for bulk and re-Ž . laxed 001 surfaces were performed using two w x basis sets: basis set according to Catti et al. 12 and STO-3G basis set extended by adding polar-Ž . ization d-functions at Al with exponent 0.6 . The results obtained using both basis sets were mutually compared and for the study of influence of Ž . relaxation on the density of states DOS and for Ž . the slab 110 was used only the STO-3G basis set.
The densities of states and projected densities of Ž . states PDOS were calculated and used as a main tool for the identification of the occurrence of specific surface states. Because of our interest on the states near bandgap, only the highest valence band was considered.
Results and Discussion
The relaxations of surface atomic layers obtained using the Buckingham plus electrostatic pow x tential with the parametrization according to 9 were 60% for the surface layer of aluminum atoms Ž . of the slab 001 and 100% for the two oxygen Ž . layers of the slab 110 . The surface density of the Ž . aluminum containing layers of the 110 slab is so low that the inclusion of the oxygens from the two surface layers does not produce unrealistic interatomic distances.
Almost the same results were obtained using the Lennard-Jones potential. The potential constants were optimized to reproduce the energy of formation of the ␣-alumina and simultaneously to minimize the norm of gradient of energy with respect to lattice parameters and coordinates of atoms. The formation energy with respect to isolated Al and O atoms was determined using ther- . kcalrmol, O, O s 2.902 A. Because it was not possible to reach exactly the zero norm of the energy gradient, the obtained potential functions were examined to reproduce the experimental geometry of ␣-alumina. The primitive cell volume was contracted to 70% of its original value. Despite this fact, the relaxations obtained were in very good agreement with the results provided by the Buckingham plus electrostatic potential: relax-Ž . ation 65% for the Al layer of the 001 slab and Ž . 100% for two oxygen layers of the 110 slab.
w x The atomistic potential simulations 7 provided Ž . the relaxation of the Al layer of the 001 surface 59%, which is in good accordance with our results obtained using classical mechanics potential relaxations. However, these methods underestimate the Ž . relaxation of the 001 surface in comparison with quantum mechanical computations. The maximum Ž . value of relaxation of the top Al layer of the 001 surface was obtained using density-functional the-Ž . ory DFT periodic quantum chemical calculation w x Ž . 2 . This value 86% is in relatively good agreement with the 80% obtained in the present study using quantum chemical computation of much lower quality. Because of the well-known fact that the STO-3G basis set reproduces relatively well the geometries, this agreement is not surprising.
Concerning the very high, 100% relaxation of Ž . two oxygen layers of the 110 surface, one should notice that the shift of the atomar positions is not very high-the interplane distances are 0.19 and 0.8 A, respectively. For the consecutive quantum Ž . chemical computations the slab 110 with 100% relaxed first and second oxygen layer was taken as input.
The study of relaxation of the surface Al-con-Ž . taining layer of the 001 slab by means of periodic Hartree᎐Fock calculation using STO-3G basis set provided the value of relaxation of 80%. portant for our purposes, is well reproduced also in the STO-3G basis set despite the differences in the value of Fermi energy and in the width of the bandgap. The presence of the surface states and the trends of energy shifts of individual bands are clearly expressed using STO-3G basis set. The evo-Ž . lution of the DOS with relaxation of the 001 Ž . surface and the DOS of the 110 slab were then studied using STO-3G basis set. Figure 5 shows the evolution of the total DOS of Ž . the 001 slab with relaxation. With growing relaxation, the Fermi energy shifts to more negative values, the bottom of the conduction band slightly shifts to the lower energy and the energy of the surface states increases. The principal result, demonstrated in Figure 5 is that not only the unrelaxed but also the relaxed surface produces surface states into energy gap. One can clearly see that these states have their origin in the surface states of the unrelaxed surface and that these states are not only a broadening of the conduction band. This result is in contradiction with the result obtained using semiempirical tight-binding Hamiltow x nian 8 , where surface states are shifted by the relaxation above the conduction band. Ž .
Figure 5
2.
In the case of the 001 relaxed surface, the width of bandgap grows in comparison to the bulk, Fermi energy is lower than in the bulk, and the surface excited states are close to the upper border of the bandgap. As a Ž . consequence of these facts, the 001 relaxed surface is a worse electron donor and a slightly better electron acceptor than the bulk.
Ž . In the case of interaction of the 001 surface of ␣-alumina with a very strong electron donor, the effect of charge-transfer interaction should be taken into account.
Ž .
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