A GdFe (100 nm) / TbFe (e) / GdFe (50 nm) trilayer, where the thickness e of the TbFe layer can be as thin as 0.2 nm, constitutes a domain wall junction. In this device, a 180=B0 domain wall nucleated in the thicker GdFe layer crosses the artificial potential energy barrier due to TbFe layer by thermal activation for temperatures higher than 1K. Below this temperature, anomalous behaviours are observed in the dynamical measurements of the crossing of the barrier. Quantum tunnelling of magnetisation is suggested.
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