Mohammed LEDRA

Univ Constantine3, Génie Des Procédés, Department Member

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Dr. Mohammed LEDRA received his Ph.D in Solid State Physics from Constantine 1 University, Algeria in 2006,. He holds a teaching position of Professor at Constantine 3 University, Algeria. Since 2005, he is a member at the Laboratory of Metallic and Semiconducting Materials (LMSM), Biskra University, Algeria

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Arizona State University

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High Institute of Management of Sousse

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El-Hadj Lakhdar

Mohamed Amine EL MOUDNI

USMBA, FSDM

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Papers by Mohammed LEDRA

Effects of a linear arrangement of embedded Ge nanocrystals on an electron beam induced current

Micro and Nanostructures

Caractérisation électrique et optique des diodes électroluminescentes

Rеvuе des Energies Renouvelables, Sep 30, 2015

Simulation of Carrier Trapping in an Embedded Nanowire and Its Effect in the Nano-EBIC Technique

Effect of an isolated Ge nanowire embedded in an n-doped Si on electron beam induced current is s... more Effect of an isolated Ge nanowire embedded in an n-doped Si on electron beam induced current is simulated by a Monte Carlo calculation algorithm. A circular nano-contact is used to collect the current generated by the use of primary energy of 5 or 10 keV in a perpendicular configuration along a line passing through the contact center. The nanowire, considered as a recombination center, is vertically positioned beneath the contact. Calculation takes into account various parameters such as a nano-scale depletion zone under the nano-contact, the depth of the nanowire, and its size. The surface recombination velocity is taken equal to zero. Competition between both carriers collected by the nano-contact and those captured by the nanowire is studied. Both processes are affected by the depth of the nanowire and by the primary energy. Moreover, the nanowire–Si contact behaves as a nano-scale hetero-junction, and hole storage in the nanowire leads to accentuation of energy band bending, esp...

Simulated Contrast of Two Dislocations

Semiconductors, 2019

A three-dimensional Monte Carlo simulation algorithm is used to study the contrast of two disloca... more A three-dimensional Monte Carlo simulation algorithm is used to study the contrast of two dislocations perpendicular to the irradiated surface of an n-doped silicon sample in the electron beam induced current mode. The dislocations are positioned in the irradiation trajectory, and each of both is considered as a cylinder where the minority carrier diffusion length varies abruptly from a low inside dislocations up to a high value outside dislocations. The EBIC contrast was obtained by simulating the random diffusion of carriers generated at point-like sources randomly distributed within the generation volume. Results are analyzed on the basis of change in the generation volume in the bulk of the sample and of carrier trapping process inside dislocations. The EBIC contrast increases with the increase of the electron beam energy. It also increases when the minority diffusion length inside dislocations, or their separating distance decreases.

Mohammed LEDRA

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