Journal of Advanced Chemical Engineering (Print), 2017
The arrested precipitation technique (APT) is used to deposit CuInSe 2 thin films. The deposition... more The arrested precipitation technique (APT) is used to deposit CuInSe 2 thin films. The deposition of thin films is carried out at room temperature. The optical study reveals direct allowed type of transition for CuInSe 2 thin films. The XRD pattern confirms mixed phase of CuInSe 2 thin films. The SEM image reveals nanocubic thin film formation. The EDS analysis confirms presence of copper, indium and selenium elements in the synthesized thin film. The synthesized thin films are beneficial for the solar cell applications.
In the present paper we report structural, optical, morphological and electrical properties of th... more In the present paper we report structural, optical, morphological and electrical properties of thin films of MoBi 2 S 5 prepared by facile self organized arrested precipitation technique (APT) from aqueous alkaline bath. X-ray diffraction study on thin films suggests orthorhombic and rhombohedral mixed phase structure. The samples are further annealed under vacuum at 373 and 473 K. The EDS pattern shows minor loss of sulphur upto 473 K. The optical absorption in visible region shows direct allowed transition with band gap variation over 1.2e1.1 eV. Post-heat treated samples exhibit n-type electrical conductivity. SEM images show uniform distribution of spherical grains with diameter w200 nm for as-synthesized MoBi 2 S 5 thin film. The grain size increases with annealing temperature and morphology becomes more compact due to crystallization of thin film. The surface roughness deduced from AFM, was in the range of 1.29e1.92 nm. The MoBi 2 S 5 thin films are employed for the fabrication of photoelectrochemical solar cells as all the samples exhibit strong absorption in visible to near IR region. Due to vacuum annealing it gives a significant enhancement of power conversion efficiency (h) upto 0.14% as compared to as-synthesized MoBi 2 S 5 thin film.
In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via... more In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via facile and low cost hydrothermal method. The synthesized (CuS) thin film was characterized for optical, morphological and compositional analysis. Surface profiler study shows thickness of thin film is 420 nm. The optical study revealed that the direct allowed type of transition having band gap 1.95 eV. The X-Ray diffraction (XRD) study illustrated that CuS thin film was nanocrystalline in nature with pure cubic crystal structure and calculated crystalline size is 18 nm. Well adherent and crack free deposition on substrate was observed in Scanning Electron Microscopy (SEM) analysis. SEM images show that synthesized CuS thin film having nanoflakes like morphology. The Energy Dispersive Spectra (EDS) pattern confirmed that Cu and S elements are present in deposited thin film. At last, we have critically analyzed photoresponse property to check the suitability of deposited materials for photoelectrochemical (PEC) application. PEC study illustrates that, the synthesized CuS thin film having power conversion efficiency 0.162 %.In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via facile and low cost hydrothermal method. The synthesized (CuS) thin film was characterized for optical, morphological and compositional analysis. Surface profiler study shows thickness of thin film is 420 nm. The optical study revealed that the direct allowed type of transition having band gap 1.95 eV. The X-Ray diffraction (XRD) study illustrated that CuS thin film was nanocrystalline in nature with pure cubic crystal structure and calculated crystalline size is 18 nm. Well adherent and crack free deposition on substrate was observed in Scanning Electron Microscopy (SEM) analysis. SEM images show that synthesized CuS thin film having nanoflakes like morphology. The Energy Dispersive Spectra (EDS) pattern confirmed that Cu and S elements are present in deposited thin film. At last, we have critically analyzed photoresponse property to check the suitability of deposited materials for photoelectrochemical (PEC)...
Highly ordered quaternary semiconducting MoBi (2Àx) In x S 5 nanocrystalline thin films have been... more Highly ordered quaternary semiconducting MoBi (2Àx) In x S 5 nanocrystalline thin films have been successfully synthesized via a relatively simple and convenient Arrested Precipitation Technique (APT). This solution based technique is being scaled up and may serve as the basis for the next generation of low cost solar cells. Depending on the chemical composition and synthesis conditions, the morphology of the nanocrystalline thin films can be controlled by [In]/[Bi] molar ratio. The structural, morphological, compositional and optical absorption properties of as-synthesized MoBi (2Àx) In x S 5 thin films are characterized using X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), scanning electron microscope (SEM), field emission scanning electron microscope (FESEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and UVeViseNIR spectrophotometry techniques. The photoelectrochemical (PEC) characterization of the films were carried out in 0.05 M I À /I 3 À redox electrolyte under dark and illuminated conditions. The maximum photocurrent density (411 mA/cm 2) is obtained for molar ratio [In]/[Bi] ¼ 1 using 500 W tungsten filament lamp with light intensity 30 mW/cm 2 .
Journal of Materials Science: Materials in Electronics, Sep 22, 2018
In present investigation, we have successfully synthesized nanocrystalline Cu 2 S thin films at d... more In present investigation, we have successfully synthesized nanocrystalline Cu 2 S thin films at different deposition time via single step hydrothermal route. The synthesized Cu 2 S thin films characterized for their optostructural, morphological, compositional and photoelecrochemical properties as function of deposition time. Thickness of deposited Cu 2 S thin films increases with increase in deposition time. The optical studies revealed that band gap of Cu 2 S thin films decrease with increase in deposition time. Structural study confirm that Cu 2 S thin films are nanocrystalline in nature with pure hexagonal crystal structure. Crystallite size were increases with increase in deposition time. Raman spectrum shows the presence of sharp band at 472 cm −1 confirms the formation of pure phase hexagonal Cu 2 S thin film. Scanning electron microscopy micrographs of Cu 2 S thin films demonstrate that significant change in surface morphology. The high resolution transmission electron microscopy and selected area emission diffraction study indicate that nanocrystalline Cu 2 S thin films formation. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy show the presence of elements and preferred valence state with stoichiometric composition of the Cu 2 S thin films. electron impedance spectroscopy reveals that charge transfer resistance (R ct) decreases with increase in deposition time. From J-V measurements, it was found that, Cu 2 S thin films shows maximum conversion efficiency is 0.27% for film after deposition of 6 h.
Journal of Materials Science: Materials in Electronics, Oct 12, 2013
ABSTRACT An arrested precipitation route was developed to obtain gallium doped MoBi2Se5 thin film... more ABSTRACT An arrested precipitation route was developed to obtain gallium doped MoBi2Se5 thin films on substrate support. High purity organometallic complexes of Mo–triethanolamine (Mo–TEA), Bi–triethanolamine (Bi–TEA), Ga–triethanolamine (Ga–TEA) allow to react with sodium selenosulphite (Na2SeSO3) in the presence of sodium dithionite (Na2S2O4) as a reducing agent in an aqueous alkaline reaction bath. As deposited thin films were characterized by X-ray diffraction, which reveals that material is nanocrystalline with mixed phases of rhombohedral (Bi2Se3)-hexagonal (MoSe2)-hexagonal (GaSe) structures. Scanning electron micrographs show the grain of granular morphology decreases with increase in Ga concentration. Energy dispersive x-ray analysis shows presence of Mo, Bi, Ga and Se elements in stoichiometric ratio confirms the chemical formula MoBiGaSe5. Optical absorbance of the films show direct allowed transition in visible region having band gap energy in the range of 1.30–1.47 eV. Thermoelectric power and electrical conductivity measurements have been carried out for thin film samples in the temperature range 300–500 K and results revealed that n-type semiconducting behavior. It is interesting to note that Ga doping in MoBi2Se5 changes n to p type conductivity.
We conducted a retrospective study on the prevalence and correlates of transmitted drug resistanc... more We conducted a retrospective study on the prevalence and correlates of transmitted drug resistance among newly-diagnosed antiretroviral naive human immunodeficiency virus (HIV) patients in Northern Greece, during the period 2009-11. Transmitted drug resistance was documented in 21.8% of patients enrolled, affecting approximately 40% of subtype A HIV-1-infected individuals. Overcoming challenges due to the ongoing financial crisis, effective preventive measures should be implemented to control further dissemination of resistant HIV strains.
The arrested precipitation technique (APT) is used to deposit CuInSe 2 thin films. The deposition... more The arrested precipitation technique (APT) is used to deposit CuInSe 2 thin films. The deposition of thin films is carried out at room temperature. The optical study reveals direct allowed type of transition for CuInSe 2 thin films. The XRD pattern confirms mixed phase of CuInSe 2 thin films. The SEM image reveals nanocubic thin film formation. The EDS analysis confirms presence of copper, indium and selenium elements in the synthesized thin film. The synthesized thin films are beneficial for the solar cell applications.
In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via... more In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via facile and low cost hydrothermal method. The synthesized (CuS) thin film was characterized for optical, morphological and compositional analysis. Surface profiler study shows thickness of thin film is 420 nm. The optical study revealed that the direct allowed type of transition having band gap 1.95 eV. The X-Ray diffraction (XRD) study illustrated that CuS thin film was nanocrystalline in nature with pure cubic crystal structure and calculated crystalline size is 18 nm. Well adherent and crack free deposition on substrate was observed in Scanning Electron Microscopy (SEM) analysis. SEM images show that synthesized CuS thin film having nanoflakes like morphology. The Energy Dispersive Spectra (EDS) pattern confirmed that Cu and S elements are present in deposited thin film. At last, we have critically analyzed photoresponse property to check the suitability of deposited materials for photoelectrochemical (PEC) application. PEC study illustrates that, the synthesized CuS thin film having power conversion efficiency 0.162 %.In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via facile and low cost hydrothermal method. The synthesized (CuS) thin film was characterized for optical, morphological and compositional analysis. Surface profiler study shows thickness of thin film is 420 nm. The optical study revealed that the direct allowed type of transition having band gap 1.95 eV. The X-Ray diffraction (XRD) study illustrated that CuS thin film was nanocrystalline in nature with pure cubic crystal structure and calculated crystalline size is 18 nm. Well adherent and crack free deposition on substrate was observed in Scanning Electron Microscopy (SEM) analysis. SEM images show that synthesized CuS thin film having nanoflakes like morphology. The Energy Dispersive Spectra (EDS) pattern confirmed that Cu and S elements are present in deposited thin film. At last, we have critically analyzed photoresponse property to check the suitability of deposited materials for photoelectrochemical (PEC)...
Ahead of Print articles will move to that issue's Table of Contents. When the article is publishe... more Ahead of Print articles will move to that issue's Table of Contents. When the article is published in a journal issue, the full reference should be cited in addition to the DOI.
Journal of Materials Science: Materials in Electronics, 2018
In present investigation, we have successfully synthesized nanocrystalline Cu 2 S thin films at d... more In present investigation, we have successfully synthesized nanocrystalline Cu 2 S thin films at different deposition time via single step hydrothermal route. The synthesized Cu 2 S thin films characterized for their optostructural, morphological, compositional and photoelecrochemical properties as function of deposition time. Thickness of deposited Cu 2 S thin films increases with increase in deposition time. The optical studies revealed that band gap of Cu 2 S thin films decrease with increase in deposition time. Structural study confirm that Cu 2 S thin films are nanocrystalline in nature with pure hexagonal crystal structure. Crystallite size were increases with increase in deposition time. Raman spectrum shows the presence of sharp band at 472 cm −1 confirms the formation of pure phase hexagonal Cu 2 S thin film. Scanning electron microscopy micrographs of Cu 2 S thin films demonstrate that significant change in surface morphology. The high resolution transmission electron microscopy and selected area emission diffraction study indicate that nanocrystalline Cu 2 S thin films formation. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy show the presence of elements and preferred valence state with stoichiometric composition of the Cu 2 S thin films. electron impedance spectroscopy reveals that charge transfer resistance (R ct) decreases with increase in deposition time. From J-V measurements, it was found that, Cu 2 S thin films shows maximum conversion efficiency is 0.27% for film after deposition of 6 h.
Journal of colloid and interface science, Jan 15, 2018
In the present report, nanostructured bismuth selenide (BiSe) thin films have been successfully d... more In the present report, nanostructured bismuth selenide (BiSe) thin films have been successfully deposited by using arrested precipitation technique (APT) at room temperature. The effect of three different surfactants on the optostructural, morphological, compositional and photoelectrochemical properties of BiSe thin films were investigated. Optical absorption data indicates direct and allowed transition with a band gap energy varied from 1.4 eV to 1.8 eV. The X-ray diffraction pattern (XRD) revealed that BiSe thin films are crystalline in nature and confirmed rhombohedral crystal structure. SEM micrographs shows morphological transition from interconnected mesh to nanospheres like and finally granular morphology. Surface topography of BiSe thin films was determined by AFM. Compositional analysis of all samples was carried out by energy dispersive X-ray spectroscopy (EDS). Finally, all BiSe thin films shows good PEC performance with highest photoconversion efficiency 1.47%. In order ...
In the present article, we have studied the effect of post annealing treatment on microstructural... more In the present article, we have studied the effect of post annealing treatment on microstructural, optical and photoelectrochemical (PEC) properties of MoBi 2 S 5 thin films synthesized by microwave assisted technique. The synthesized thin films are vacuum annealed for 4 h at 473 K temperature. The X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and UV-Vis-NIR spectrophotometer techniques were used for characterization of the as deposited and annealed MoBi 2 S 5 thin films. The XRD pattens confirm the synthesized and annealed thin films have nanocrystalline nature with rhombohedral-orthorhombic crystal structure. SEM micrographs indicate that, nanoflowers exhibit sharper end after annealing. The optical absorption study illustrates that the optical band gap energy has been decrease from 2.0 eV to 1.75 eV with annealing. Finally, applicability of synthesized thin films has been checked for PEC property. The J-V curves revealed that synthesized thin film photoanodes are suitable for PEC cell application. As well, used simple, economical method has great potential for synthesis of various thin film materials.
Nanostructured ternary cadmium zinc selenide (CZS) thin films have been deposited by a rapid and ... more Nanostructured ternary cadmium zinc selenide (CZS) thin films have been deposited by a rapid and reliable Microwave assisted chemical bath deposition (MA-CBD) method by using ethylenediaminetetraacetic acid (EDTA) and triethanolamine (TEA) as complexing agents. Optical, structural, morphological, compositional and electrical properties of CZS thin films have been investigated as a function of different complexing agents. Band gap energy of CZS thin films obtained for EDTA and TEA was 2.03 and 1.75 eV respectively. X-ray diffraction (XRD) studies revealed that films were nanocrystalline in nature with mixed phase structure, in which cubic phase of CdSe dominant over hexagonal ZnSe. The scanning electron microscopy (SEM) images show porous surface morphology with distinct grains over the substrate surface. The EDS spectra show presence of Cd, Zn and Se elements. Thermoelectric power (TEP) measurement shows films were n-type semiconducting in nature. Synthesized thin films shows potential for solar cell application.
Nanostructured combinatorial quaternary Cu2Cd(SSe)2 thin films synthesized via a self organized a... more Nanostructured combinatorial quaternary Cu2Cd(SSe)2 thin films synthesized via a self organized arrested precipitation technique for photoelectrochemical cell performance.
In the present work, we report a facile chemical route for the deposition of Cd1−xZnxSe thin film... more In the present work, we report a facile chemical route for the deposition of Cd1−xZnxSe thin films using a simple, self-organized arrested precipitation technique (APT).
Journal of Advanced Chemical Engineering (Print), 2017
The arrested precipitation technique (APT) is used to deposit CuInSe 2 thin films. The deposition... more The arrested precipitation technique (APT) is used to deposit CuInSe 2 thin films. The deposition of thin films is carried out at room temperature. The optical study reveals direct allowed type of transition for CuInSe 2 thin films. The XRD pattern confirms mixed phase of CuInSe 2 thin films. The SEM image reveals nanocubic thin film formation. The EDS analysis confirms presence of copper, indium and selenium elements in the synthesized thin film. The synthesized thin films are beneficial for the solar cell applications.
In the present paper we report structural, optical, morphological and electrical properties of th... more In the present paper we report structural, optical, morphological and electrical properties of thin films of MoBi 2 S 5 prepared by facile self organized arrested precipitation technique (APT) from aqueous alkaline bath. X-ray diffraction study on thin films suggests orthorhombic and rhombohedral mixed phase structure. The samples are further annealed under vacuum at 373 and 473 K. The EDS pattern shows minor loss of sulphur upto 473 K. The optical absorption in visible region shows direct allowed transition with band gap variation over 1.2e1.1 eV. Post-heat treated samples exhibit n-type electrical conductivity. SEM images show uniform distribution of spherical grains with diameter w200 nm for as-synthesized MoBi 2 S 5 thin film. The grain size increases with annealing temperature and morphology becomes more compact due to crystallization of thin film. The surface roughness deduced from AFM, was in the range of 1.29e1.92 nm. The MoBi 2 S 5 thin films are employed for the fabrication of photoelectrochemical solar cells as all the samples exhibit strong absorption in visible to near IR region. Due to vacuum annealing it gives a significant enhancement of power conversion efficiency (h) upto 0.14% as compared to as-synthesized MoBi 2 S 5 thin film.
In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via... more In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via facile and low cost hydrothermal method. The synthesized (CuS) thin film was characterized for optical, morphological and compositional analysis. Surface profiler study shows thickness of thin film is 420 nm. The optical study revealed that the direct allowed type of transition having band gap 1.95 eV. The X-Ray diffraction (XRD) study illustrated that CuS thin film was nanocrystalline in nature with pure cubic crystal structure and calculated crystalline size is 18 nm. Well adherent and crack free deposition on substrate was observed in Scanning Electron Microscopy (SEM) analysis. SEM images show that synthesized CuS thin film having nanoflakes like morphology. The Energy Dispersive Spectra (EDS) pattern confirmed that Cu and S elements are present in deposited thin film. At last, we have critically analyzed photoresponse property to check the suitability of deposited materials for photoelectrochemical (PEC) application. PEC study illustrates that, the synthesized CuS thin film having power conversion efficiency 0.162 %.In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via facile and low cost hydrothermal method. The synthesized (CuS) thin film was characterized for optical, morphological and compositional analysis. Surface profiler study shows thickness of thin film is 420 nm. The optical study revealed that the direct allowed type of transition having band gap 1.95 eV. The X-Ray diffraction (XRD) study illustrated that CuS thin film was nanocrystalline in nature with pure cubic crystal structure and calculated crystalline size is 18 nm. Well adherent and crack free deposition on substrate was observed in Scanning Electron Microscopy (SEM) analysis. SEM images show that synthesized CuS thin film having nanoflakes like morphology. The Energy Dispersive Spectra (EDS) pattern confirmed that Cu and S elements are present in deposited thin film. At last, we have critically analyzed photoresponse property to check the suitability of deposited materials for photoelectrochemical (PEC)...
Highly ordered quaternary semiconducting MoBi (2Àx) In x S 5 nanocrystalline thin films have been... more Highly ordered quaternary semiconducting MoBi (2Àx) In x S 5 nanocrystalline thin films have been successfully synthesized via a relatively simple and convenient Arrested Precipitation Technique (APT). This solution based technique is being scaled up and may serve as the basis for the next generation of low cost solar cells. Depending on the chemical composition and synthesis conditions, the morphology of the nanocrystalline thin films can be controlled by [In]/[Bi] molar ratio. The structural, morphological, compositional and optical absorption properties of as-synthesized MoBi (2Àx) In x S 5 thin films are characterized using X-ray diffraction (XRD), high resolution transmission electron microscope (HRTEM), scanning electron microscope (SEM), field emission scanning electron microscope (FESEM), energy dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and UVeViseNIR spectrophotometry techniques. The photoelectrochemical (PEC) characterization of the films were carried out in 0.05 M I À /I 3 À redox electrolyte under dark and illuminated conditions. The maximum photocurrent density (411 mA/cm 2) is obtained for molar ratio [In]/[Bi] ¼ 1 using 500 W tungsten filament lamp with light intensity 30 mW/cm 2 .
Journal of Materials Science: Materials in Electronics, Sep 22, 2018
In present investigation, we have successfully synthesized nanocrystalline Cu 2 S thin films at d... more In present investigation, we have successfully synthesized nanocrystalline Cu 2 S thin films at different deposition time via single step hydrothermal route. The synthesized Cu 2 S thin films characterized for their optostructural, morphological, compositional and photoelecrochemical properties as function of deposition time. Thickness of deposited Cu 2 S thin films increases with increase in deposition time. The optical studies revealed that band gap of Cu 2 S thin films decrease with increase in deposition time. Structural study confirm that Cu 2 S thin films are nanocrystalline in nature with pure hexagonal crystal structure. Crystallite size were increases with increase in deposition time. Raman spectrum shows the presence of sharp band at 472 cm −1 confirms the formation of pure phase hexagonal Cu 2 S thin film. Scanning electron microscopy micrographs of Cu 2 S thin films demonstrate that significant change in surface morphology. The high resolution transmission electron microscopy and selected area emission diffraction study indicate that nanocrystalline Cu 2 S thin films formation. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy show the presence of elements and preferred valence state with stoichiometric composition of the Cu 2 S thin films. electron impedance spectroscopy reveals that charge transfer resistance (R ct) decreases with increase in deposition time. From J-V measurements, it was found that, Cu 2 S thin films shows maximum conversion efficiency is 0.27% for film after deposition of 6 h.
Journal of Materials Science: Materials in Electronics, Oct 12, 2013
ABSTRACT An arrested precipitation route was developed to obtain gallium doped MoBi2Se5 thin film... more ABSTRACT An arrested precipitation route was developed to obtain gallium doped MoBi2Se5 thin films on substrate support. High purity organometallic complexes of Mo–triethanolamine (Mo–TEA), Bi–triethanolamine (Bi–TEA), Ga–triethanolamine (Ga–TEA) allow to react with sodium selenosulphite (Na2SeSO3) in the presence of sodium dithionite (Na2S2O4) as a reducing agent in an aqueous alkaline reaction bath. As deposited thin films were characterized by X-ray diffraction, which reveals that material is nanocrystalline with mixed phases of rhombohedral (Bi2Se3)-hexagonal (MoSe2)-hexagonal (GaSe) structures. Scanning electron micrographs show the grain of granular morphology decreases with increase in Ga concentration. Energy dispersive x-ray analysis shows presence of Mo, Bi, Ga and Se elements in stoichiometric ratio confirms the chemical formula MoBiGaSe5. Optical absorbance of the films show direct allowed transition in visible region having band gap energy in the range of 1.30–1.47 eV. Thermoelectric power and electrical conductivity measurements have been carried out for thin film samples in the temperature range 300–500 K and results revealed that n-type semiconducting behavior. It is interesting to note that Ga doping in MoBi2Se5 changes n to p type conductivity.
We conducted a retrospective study on the prevalence and correlates of transmitted drug resistanc... more We conducted a retrospective study on the prevalence and correlates of transmitted drug resistance among newly-diagnosed antiretroviral naive human immunodeficiency virus (HIV) patients in Northern Greece, during the period 2009-11. Transmitted drug resistance was documented in 21.8% of patients enrolled, affecting approximately 40% of subtype A HIV-1-infected individuals. Overcoming challenges due to the ongoing financial crisis, effective preventive measures should be implemented to control further dissemination of resistant HIV strains.
The arrested precipitation technique (APT) is used to deposit CuInSe 2 thin films. The deposition... more The arrested precipitation technique (APT) is used to deposit CuInSe 2 thin films. The deposition of thin films is carried out at room temperature. The optical study reveals direct allowed type of transition for CuInSe 2 thin films. The XRD pattern confirms mixed phase of CuInSe 2 thin films. The SEM image reveals nanocubic thin film formation. The EDS analysis confirms presence of copper, indium and selenium elements in the synthesized thin film. The synthesized thin films are beneficial for the solar cell applications.
In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via... more In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via facile and low cost hydrothermal method. The synthesized (CuS) thin film was characterized for optical, morphological and compositional analysis. Surface profiler study shows thickness of thin film is 420 nm. The optical study revealed that the direct allowed type of transition having band gap 1.95 eV. The X-Ray diffraction (XRD) study illustrated that CuS thin film was nanocrystalline in nature with pure cubic crystal structure and calculated crystalline size is 18 nm. Well adherent and crack free deposition on substrate was observed in Scanning Electron Microscopy (SEM) analysis. SEM images show that synthesized CuS thin film having nanoflakes like morphology. The Energy Dispersive Spectra (EDS) pattern confirmed that Cu and S elements are present in deposited thin film. At last, we have critically analyzed photoresponse property to check the suitability of deposited materials for photoelectrochemical (PEC) application. PEC study illustrates that, the synthesized CuS thin film having power conversion efficiency 0.162 %.In the present investigation, we have successfully synthesized Copper Sulfide (CuS) thin film via facile and low cost hydrothermal method. The synthesized (CuS) thin film was characterized for optical, morphological and compositional analysis. Surface profiler study shows thickness of thin film is 420 nm. The optical study revealed that the direct allowed type of transition having band gap 1.95 eV. The X-Ray diffraction (XRD) study illustrated that CuS thin film was nanocrystalline in nature with pure cubic crystal structure and calculated crystalline size is 18 nm. Well adherent and crack free deposition on substrate was observed in Scanning Electron Microscopy (SEM) analysis. SEM images show that synthesized CuS thin film having nanoflakes like morphology. The Energy Dispersive Spectra (EDS) pattern confirmed that Cu and S elements are present in deposited thin film. At last, we have critically analyzed photoresponse property to check the suitability of deposited materials for photoelectrochemical (PEC)...
Ahead of Print articles will move to that issue's Table of Contents. When the article is publishe... more Ahead of Print articles will move to that issue's Table of Contents. When the article is published in a journal issue, the full reference should be cited in addition to the DOI.
Journal of Materials Science: Materials in Electronics, 2018
In present investigation, we have successfully synthesized nanocrystalline Cu 2 S thin films at d... more In present investigation, we have successfully synthesized nanocrystalline Cu 2 S thin films at different deposition time via single step hydrothermal route. The synthesized Cu 2 S thin films characterized for their optostructural, morphological, compositional and photoelecrochemical properties as function of deposition time. Thickness of deposited Cu 2 S thin films increases with increase in deposition time. The optical studies revealed that band gap of Cu 2 S thin films decrease with increase in deposition time. Structural study confirm that Cu 2 S thin films are nanocrystalline in nature with pure hexagonal crystal structure. Crystallite size were increases with increase in deposition time. Raman spectrum shows the presence of sharp band at 472 cm −1 confirms the formation of pure phase hexagonal Cu 2 S thin film. Scanning electron microscopy micrographs of Cu 2 S thin films demonstrate that significant change in surface morphology. The high resolution transmission electron microscopy and selected area emission diffraction study indicate that nanocrystalline Cu 2 S thin films formation. X-ray photoelectron spectroscopy and energy dispersive X-ray spectroscopy show the presence of elements and preferred valence state with stoichiometric composition of the Cu 2 S thin films. electron impedance spectroscopy reveals that charge transfer resistance (R ct) decreases with increase in deposition time. From J-V measurements, it was found that, Cu 2 S thin films shows maximum conversion efficiency is 0.27% for film after deposition of 6 h.
Journal of colloid and interface science, Jan 15, 2018
In the present report, nanostructured bismuth selenide (BiSe) thin films have been successfully d... more In the present report, nanostructured bismuth selenide (BiSe) thin films have been successfully deposited by using arrested precipitation technique (APT) at room temperature. The effect of three different surfactants on the optostructural, morphological, compositional and photoelectrochemical properties of BiSe thin films were investigated. Optical absorption data indicates direct and allowed transition with a band gap energy varied from 1.4 eV to 1.8 eV. The X-ray diffraction pattern (XRD) revealed that BiSe thin films are crystalline in nature and confirmed rhombohedral crystal structure. SEM micrographs shows morphological transition from interconnected mesh to nanospheres like and finally granular morphology. Surface topography of BiSe thin films was determined by AFM. Compositional analysis of all samples was carried out by energy dispersive X-ray spectroscopy (EDS). Finally, all BiSe thin films shows good PEC performance with highest photoconversion efficiency 1.47%. In order ...
In the present article, we have studied the effect of post annealing treatment on microstructural... more In the present article, we have studied the effect of post annealing treatment on microstructural, optical and photoelectrochemical (PEC) properties of MoBi 2 S 5 thin films synthesized by microwave assisted technique. The synthesized thin films are vacuum annealed for 4 h at 473 K temperature. The X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM) and UV-Vis-NIR spectrophotometer techniques were used for characterization of the as deposited and annealed MoBi 2 S 5 thin films. The XRD pattens confirm the synthesized and annealed thin films have nanocrystalline nature with rhombohedral-orthorhombic crystal structure. SEM micrographs indicate that, nanoflowers exhibit sharper end after annealing. The optical absorption study illustrates that the optical band gap energy has been decrease from 2.0 eV to 1.75 eV with annealing. Finally, applicability of synthesized thin films has been checked for PEC property. The J-V curves revealed that synthesized thin film photoanodes are suitable for PEC cell application. As well, used simple, economical method has great potential for synthesis of various thin film materials.
Nanostructured ternary cadmium zinc selenide (CZS) thin films have been deposited by a rapid and ... more Nanostructured ternary cadmium zinc selenide (CZS) thin films have been deposited by a rapid and reliable Microwave assisted chemical bath deposition (MA-CBD) method by using ethylenediaminetetraacetic acid (EDTA) and triethanolamine (TEA) as complexing agents. Optical, structural, morphological, compositional and electrical properties of CZS thin films have been investigated as a function of different complexing agents. Band gap energy of CZS thin films obtained for EDTA and TEA was 2.03 and 1.75 eV respectively. X-ray diffraction (XRD) studies revealed that films were nanocrystalline in nature with mixed phase structure, in which cubic phase of CdSe dominant over hexagonal ZnSe. The scanning electron microscopy (SEM) images show porous surface morphology with distinct grains over the substrate surface. The EDS spectra show presence of Cd, Zn and Se elements. Thermoelectric power (TEP) measurement shows films were n-type semiconducting in nature. Synthesized thin films shows potential for solar cell application.
Nanostructured combinatorial quaternary Cu2Cd(SSe)2 thin films synthesized via a self organized a... more Nanostructured combinatorial quaternary Cu2Cd(SSe)2 thin films synthesized via a self organized arrested precipitation technique for photoelectrochemical cell performance.
In the present work, we report a facile chemical route for the deposition of Cd1−xZnxSe thin film... more In the present work, we report a facile chemical route for the deposition of Cd1−xZnxSe thin films using a simple, self-organized arrested precipitation technique (APT).
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