Environmental stability of field effect transistors with various additives (Transfer and output c... more Environmental stability of field effect transistors with various additives (Transfer and output characteristics), bias stress stability measurements (on OFETs), transfer length measurements, UPS measurements, Photothermal Deflection Spectroscopy measurements (PDS), Ellipsometry measurements.
L'invention porte sur un ensemble de dispositifs de commutation electronique encapsules dans ... more L'invention porte sur un ensemble de dispositifs de commutation electronique encapsules dans une structure d'encapsulation ; ledit ensemble etant expose a une ou plusieurs poches de gaz entre ledit ensemble et ladite structure d'encapsulation.
Due to their low-temperature processing properties and inherent mechanical flexibility, conjugate... more Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the s...
... 449-711 Haydn Gregory, Mark Bale, Colin Creighton, Barry Wild, Andrew Shawcross, Laura Webb, ... more ... 449-711 Haydn Gregory, Mark Bale, Colin Creighton, Barry Wild, Andrew Shawcross, Laura Webb, Marie Hatcher, Russell Lees, Martin Richardson, Owen Bassett, Stephen Coats, Jan Jongman, Simon Goddard, Peter Lyon, Craig Murphy, Paul Wallace, Julian Carter, Nicky ...
L'invention concerne, dans un premier aspect, un dispositif organique electroluminescent comp... more L'invention concerne, dans un premier aspect, un dispositif organique electroluminescent comprenant un substrat transparent, une premiere electrode disposee sur le substrat pour injecter une charge d'une premiere polarite, une seconde electrode deposee sur la premiere electrode pour injecter une charge d'une seconde polarite opposee a la premiere polarite, une couche organique electroluminescente disposee entre la premiere et la seconde electrode, la seconde electrode etant reflechissante, la premiere electrode etant transparente ou semi-transparente, et une ou plusieurs couches intermediaires de materiau dielectrique avec un indice de refraction superieur a 1,8, ou un materiau metallique, etant disposes entre le substrat et la premiere electrode formant un miroir semi-transparent, avec une micro-cavite entre la seconde electrode reflechissante et le miroir semi-transparent. Toutes les couches intermediaires disposees entre le substrat et la premiere electrode presentent...
We have investigated the degradation effects of ozone exposure on Organic Field-Effect Transistor... more We have investigated the degradation effects of ozone exposure on Organic Field-Effect Transistors (OFETs) based on 2,8-Difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES ADT) as the organic semiconducting channel layer, as well as on thin films of this widely used, high mobility, small molecule semiconductor. Electrical I-V measurements showed a loss of transistor characteristic behavior. We present 1 H Nuclear Magnetic Resonance (NMR) spectroscopy results as well as X-ray Photoemission Spectroscopy (XPS) and Fourier Transform Infrared (FTIR) spectroscopy measurements showing the oxidation of the parent molecule, from which we suggest various possible reaction paths.
A fast and thorough detection of structural and functional defects of flat-panel displays, large-... more A fast and thorough detection of structural and functional defects of flat-panel displays, large-area image detectors, and printed electronics requires a contactless and flexible inspection technique. Moreover, to accelerate the development of new products and to increase yields, efficient device characterization including the analysis of single component functionality and testing under operating conditions is essential. In this contribution, a contactless inspection method solely based on capacitive coupling is used to analyze pixel and thin-film transistor (TFT) functionality of active-matrix liquid crystal and electrophoretic display backplanes. Employing a capacitively coupled sensor, the measurement of the evolution of the pixel electrode voltage during TFT operation (switching) yields display flicker and TFT parameters, such as TFT ON-and OFF-currents, TFT threshold, and intrinsic capacitance. To confirm the measurement results, the pixel voltage was also measured with an active voltage probe brought into contact with the pixel electrodes under test.
Environmental stability of field effect transistors with various additives (Transfer and output c... more Environmental stability of field effect transistors with various additives (Transfer and output characteristics), bias stress stability measurements (on OFETs), transfer length measurements, UPS measurements, Photothermal Deflection Spectroscopy measurements (PDS), Ellipsometry measurements.
L'invention porte sur un ensemble de dispositifs de commutation electronique encapsules dans ... more L'invention porte sur un ensemble de dispositifs de commutation electronique encapsules dans une structure d'encapsulation ; ledit ensemble etant expose a une ou plusieurs poches de gaz entre ledit ensemble et ladite structure d'encapsulation.
Due to their low-temperature processing properties and inherent mechanical flexibility, conjugate... more Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the s...
... 449-711 Haydn Gregory, Mark Bale, Colin Creighton, Barry Wild, Andrew Shawcross, Laura Webb, ... more ... 449-711 Haydn Gregory, Mark Bale, Colin Creighton, Barry Wild, Andrew Shawcross, Laura Webb, Marie Hatcher, Russell Lees, Martin Richardson, Owen Bassett, Stephen Coats, Jan Jongman, Simon Goddard, Peter Lyon, Craig Murphy, Paul Wallace, Julian Carter, Nicky ...
L'invention concerne, dans un premier aspect, un dispositif organique electroluminescent comp... more L'invention concerne, dans un premier aspect, un dispositif organique electroluminescent comprenant un substrat transparent, une premiere electrode disposee sur le substrat pour injecter une charge d'une premiere polarite, une seconde electrode deposee sur la premiere electrode pour injecter une charge d'une seconde polarite opposee a la premiere polarite, une couche organique electroluminescente disposee entre la premiere et la seconde electrode, la seconde electrode etant reflechissante, la premiere electrode etant transparente ou semi-transparente, et une ou plusieurs couches intermediaires de materiau dielectrique avec un indice de refraction superieur a 1,8, ou un materiau metallique, etant disposes entre le substrat et la premiere electrode formant un miroir semi-transparent, avec une micro-cavite entre la seconde electrode reflechissante et le miroir semi-transparent. Toutes les couches intermediaires disposees entre le substrat et la premiere electrode presentent...
We have investigated the degradation effects of ozone exposure on Organic Field-Effect Transistor... more We have investigated the degradation effects of ozone exposure on Organic Field-Effect Transistors (OFETs) based on 2,8-Difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES ADT) as the organic semiconducting channel layer, as well as on thin films of this widely used, high mobility, small molecule semiconductor. Electrical I-V measurements showed a loss of transistor characteristic behavior. We present 1 H Nuclear Magnetic Resonance (NMR) spectroscopy results as well as X-ray Photoemission Spectroscopy (XPS) and Fourier Transform Infrared (FTIR) spectroscopy measurements showing the oxidation of the parent molecule, from which we suggest various possible reaction paths.
A fast and thorough detection of structural and functional defects of flat-panel displays, large-... more A fast and thorough detection of structural and functional defects of flat-panel displays, large-area image detectors, and printed electronics requires a contactless and flexible inspection technique. Moreover, to accelerate the development of new products and to increase yields, efficient device characterization including the analysis of single component functionality and testing under operating conditions is essential. In this contribution, a contactless inspection method solely based on capacitive coupling is used to analyze pixel and thin-film transistor (TFT) functionality of active-matrix liquid crystal and electrophoretic display backplanes. Employing a capacitively coupled sensor, the measurement of the evolution of the pixel electrode voltage during TFT operation (switching) yields display flicker and TFT parameters, such as TFT ON-and OFF-currents, TFT threshold, and intrinsic capacitance. To confirm the measurement results, the pixel voltage was also measured with an active voltage probe brought into contact with the pixel electrodes under test.
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